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DLL Design for Synchronous DRAM

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0% found this document useful (0 votes)
12 views24 pages

DLL Design for Synchronous DRAM

Uploaded by

NIKHIL YADAV
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

DLL DESIGN IN SYNCHRONOUS

DRAM
ARMANI ALVAREZ
UNIVERSITY OF NEVADA, LAS VEGAS
ECG 721 MEMORY CIRCUIT DESIGN
DEFINITION OF SDRAM
 Asynchronous DRAM uses timing while Synchronous DRAM uses a synchronous clock to execute
commands.
 In synchronous DRAM all the commands and data are executed on the edges that are
synchronous with the system clock.
 SDRAM first started as Single Data Rate (SDR), then later it was turned to Double Data Rate
(DDR). Later it progressed from DDR2, DDR3, DDR4, and now it has progressed to DDR5.
 Single Data Rate meant data was only executed on the rising edge of the clock. DDR transfers
data on the rising and falling edges of the clock, in turn doubling the data bandwidth. This
means twice the data execution without changing the frequency. [1]
DEFINITION OF DELAY LOCKED LOOP

 The delay-locked loop (DLL) is a circuit fed by a reference clock that attempts to find the
period of that reference clock by adjusting the delay of a variable delay buffer in a
feedback loop. The loop is locked when the delayed clock signal matches the incoming clock
signal.
 The DLL is part of the dedicated DDR SDRAM.
 Problems with PLL output Jitter resulting from VCO output frequency changing with a constant
input voltage has led to the concept of DLL. [2,3]
WHY DLL IN SDRAM ?

 DLL is used in Synchronous DRAM because the generated clock can be used to sync the output
data with the system clock which allows a high degree of predictability when the output data
is accessible which allows an increase in data transfer.
ADVANTAGES OF DIGITAL DLL

 Zeroth order transfer function makes DLL easier to stabilize than other alternatives, meaning
that whatever the error is, it has the same exact response.
 Minimum Delay known
 Low clock Skew
 Short Locking Time
DDR SRAM ARCHITECTURE – [4]
DDR SDRAM ARCHITECTURE
 From the figure of the previous slide:
 The yellow section – Generic Memory Array
 The green section – additional circuitry to make a SDR Array
 The purple section – additional circuitry to make a DDR Array. In this array it can be
seen that there is a DQS generator. In addition to the DQS generator, there is also a
pre-fetch buffer that allows a single address request to fetch multiple words in bursts
that can be data or it can be masked. [4]
DDR READ
 For READs, the data strobe signals are
edge-aligned with the data signals,
meaning that all data and data strobes
are clocked out of the device by the same
internal clock signal, and all will transition
at the outputs at nominally the same time.
The controller will internally delay the
received strobe to the center of the
received data eye.
 For READs, the controller can choose to
ignore either of the two words, but the
time slots for both will be occupied. [4]
SDRAM 2N PREFETCH READ AND WRITE – [4]
SDRAM 2N PREFETCH READ AND WRITE

 To the DRAM vendor, 2n-prefetch means that the internal data bus can be twice the width of
the external data bus, and therefore, the internal column access frequency can be half of the
external data transfer rate.
 To the user, from a high-level view, 2n-prefetch means that data accesses occur in pairs. For
example a single read access fetches two data words; and for a single write access, two data
words (and/or data mask bits) must be provided. This affects both the minimum burst size and
nonminimum burst interruptions. The minimum burst size of a 2n-prefetch architecture is two
external data transfers. [4]
DQS

 Data pins in the DDR circuitry are labeled DQ and the strobe pin is labeled DQS. RAM that
use DDR are designed to transfer two data words per clock cycle, using both the positive and
the negative edge of the clock.
CLK TO DQS PART 1
 DRAM is about to be read out through DQ
some delay through T2 through flip flop and
driver, there is a clock with an added delay,
T1, and a DQS buffer.

 The sum of the delays T1 and T2 should


match the delay of the clock, Tclock. We
need T1 because of PVT that can cause
clock skew.
CLK TO DQS PART 2

 The figure on this slide is showing how clock


relates to the data, with PVT. The goal of the
DLL is to drive access time Tac = 0 so that
data syncs with the clock. [5]
THE DLL
 The basics of the DLL are input buffers,
delay lines, feedback with delay model,
phase detector, and a shift register. [7]

Important equations for DLL basics:


 PD loop delay = N * Tclock
 Tclock = t(ib) + t(d) (which are subject to
PVT variations)
 Delay Line = N * Tclock - [t(ib) + t(d)]
 Ideal forward delay = t(ib) + N * Tclock
- [t(ib) + t(d)] + t(d) = N * Tclock
DESIGN IMPORTANCE

 Jitter - Clock jitter in DDR2/3 systems is bound by clock jitter specifications in positive and
negative directions. The negative direction corresponds to a smaller clock period and the
positive direction corresponds to a larger clock period. If the clock jitter is not Gaussian in
nature, then the clock violates the timing specifications. [6]
 Duty Cycle at 50%
 PVT variations
 False Lock
INPUT/OUTPUT BUFFER – [7]
 One of the designs we can use for the
input buffer is the rail to rail input
buffer. Since the buffers are in
parallel, it is complementary in nature
which means this buffer design is
robust and works over a wide range
of operating voltages. This is a self
biasing topology and provides a
skew-less output.

 Output would just be inverters in


series.
PHASE DETECTOR
To stabilize the movement in the shift register,
after making a decision, the phase detector
will wait at least two clock cycles before
making another decision. A divide by two was
included in the phase detector so that every
other decision, resulting from comparing the
rising edges of the external clock and the
feedback clock, was used. This will provide
enough time for the shift register to operate
and the output waveform to stabilize before
another decision by the PD is implemented.[8]
VOLTAGE CONTROLLED DELAY LINE – [7]

In this example the design is modified so


that the logic levels will be full, this is
done by adding inverters at the end.
DIFFERENT TYPES OF DIGITAL DLL

A DLL consists of a phase detector, a variable delay


ine, and a DLL controller to generate the analog or
digital control signal for the delay line by PD’s output.
t selects an optimal delay (Td) to compensate the
phase error between reference clock and remote clock.
After DLL is locked, the remote clock is synchronized
with reference clock. After that, the clock buffer
propagation delay (Tc) can be ignored. [9]
REGISTER CONTROLLED DLL

The n-bit shift registers are controlled by the output of phase


detector. The phase detector detects the relationship
between input clock and output clock, and generate
eft/Right signal for shift register to control the delay time.
When the output clock leads input clock, the PD sends “Left”
ignal to shift register and the high bits in the shift register
will shift left to increase the delay time and compensate the
phase error. Similarly, if PD sends “Right” signal, the high bits
n shift register will shift right to decrease the delay time. The
DLL continuously adjusts the shift register until the phase error
s eliminated. [9]
COUNTER CONTROLLED DLL
The phase alignment scheme is similar to register-controlled DLL.
The only difference is the structure of the delay cell, the rest of
the circuit blocks are similar to register-controlled DLL. The counter-
controlled DLL adopts binary weighted delay line, so the delay cells
of the delay line have carefully adjusted to maintain a fixed
binary-weighted linearity. Meanwhile, the linearity of the delay
ine will be the key of the resolution of counter-controlled DLL. The
n-bit up/down counter updates its value according to the output of
phase detector. Phase detector detects lead or lag of the input
phase and then outputs UP/DOWN signals to control the Nbit
up/down counter. The counter produces binary-weighted control
word and adjusts the delay time of delay line until the output clock
synchronizes with input clock. The counter-controlled DLL replaces
the register-controlled one to reduce the hardware of the controller.
[9]
SAR CONTROLLED DLL

The locking time is an important design parameter for


Digital DLL. Both register-controlled and counter-
controlled DLLs use linear approach manner to search
the optimal control code word, thus the locking time
will be increased. For example, n-bits counter-based
DLL takes 2n clock cycles to lock in worst case. In order
to improve the locking time, the binary search
algorithm is used to reduce the locking time. [9]
SUCCESSIVE APPROXIMATION REGISTER
 SAR – binary search happens
 The two critical components of a SAR are the comparator and the DAC.

A SAR ADC's speed is limited by:


 The settling time of the DAC, which must settle to within the resolution of the overall converter,
for example, ½ LSB
 The comparator, which must resolve small differences in VIN and VDAC within the specified
time
 The logic overhead [10]
REFERENCES

 [1] [Link]

 [2] [Link]

 [3] “Delay-Locked Loop (DLL).” Delay-Locked Loop (DLL) Definition,


[Link]

 [4] [Link]

 [5] Feng Lin, J. Miller, A. Schoenfeld, M. Ma and R. Jacob Baker, “A registercontrolled symmetrical DLL for doubledatarate DRAM,” in IEEE Journal of SolidState Circuits,
vol. 34, no. 4, pp. 565568, Apr 1999

 [6] [Link]

 [7] Baker, R. Jacob. CMOS: Circuit Design, Layout, and Simulation. Wiley, 2019.

 [8] Baker, R.. (2000). DRAM Circuit Design: A Tutorial.

 [9] Nagpara, B. H., Karan M. Jani, D.N. Khandhar, “A Review of Different Types of Digital DelayLocked Loop in 65nm CMOS technology”, International Journal of
Modern Trends in Engineering and Research (IJMTER), vol. 3, no. 4, ISSN (Online):2349 9745, Aril 2016

 [10] [Link]

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