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MOSFET Amplifier Analysis Tutorial

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29 views2 pages

MOSFET Amplifier Analysis Tutorial

Uploaded by

akshatemails1
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

EE 204 Analog Circuits

Tutorial Problems

1. A signal generator generates 330 mVpp signal under unloaded condition. The voltage drops
down to 30 mVPP when a load RL is directly connected to the signal generator. When the
same signal generator is connected to the input of an amplifier having an inherent voltage
gain of 100, input resistance of 1 KΩ and output resistance of 225 Ω, the voltage observed
across the same load RL (which is now connected to the output of the amplifier) is 4 Vpp.
Write the expression of the overall voltage gain. Find out the probable values of the load
resistance RL and the source resistance Rs of the signal generator.
2. For the MOSFET circuit shown in Fig. 1, nCox = 100 A/V2 and the threshold voltage VT
= 1 V. What will the voltage Vx at the source of upper transistor? Also determine drain
current.

Fig. 1
3. Fig. 2 shows a discrete-circuit amplifier with parameters VDD = 15 V, Rsig = 100 kΩ, RG1 =
20 MΩ, RG2 = 10 MΩ, CC1 = 0.01 μF, RS = 3 kΩ, CS = 10 μF, RD = 4.7 kΩ, RL = 10 kΩ,
CC2 = 1 μF.

LARGE SIGNAL ANALYSIS


MEIN VCC SHORT NAHI KARTE!!!!!!

Always and only


this VGS = VG - VS
nothing else

Fig. 2
2
a) If the transistor has Vt = 1 V, and kn = 2 mA/V , find out the VGS, ID and VD. overall
b) Find gm and ro if VA = 100 V.
c) Draw a complete small-signal equivalent circuit of the amplifier, assuming all capacitors
behave as short circuit at signal frequencies. Find Rin, Rout and mid band voltage gain AM.
d) Determine poles and zeros fP1, fP2, fZ, fP3, and lower 3 dB cutoff frequency fL.
e) If MOSFET internal capacitances are Cgs = 1 pF and Cgd = 0.2 pF, determine the expected
3-dB cutoff frequency fH.
f) Draw frequency response (bode plot) of this amplifier and determine its bandwidth.
4. A common source amplifier is shown in Fig. 3 All
transistors have same parameters 𝑘𝑛 =
1 𝑊
𝜇 𝑛 𝐶𝑜𝑥 ( ) = 1𝑚𝐴/𝑉 2 , 𝑉𝑡ℎ = 2 𝑉, channel
2 𝐿
length factor 𝑛 = 0 𝑉 −1, 𝑉𝑑𝑑 = 12 𝑉, 𝐶𝐶1 =
𝐶𝐶2 = 10 𝐹.
(a) Find out the resistor RB to set ID3 = 1 mA.
(b) Find ratio RG1/RG2 such that DC voltage at the
drain of M2 is equal to the minimum required
voltage to keep M2 in saturation. Use this value
of RG1/RG2 ratio for the subsequent parts of this
question.
(c) Find RD for maximum symmetric swing at the
output. Use this value of RD for the subsequent
parts of this question.
Fig. 3
(d) Find the small signal voltage gain from Vin to Vout.
(e) Find the low frequency, high-pass pole resulting from Cc2 (i.e. lower cut-off frequency
is defined by Cc2).
(f) Find RG1 and RG2 (for the ratio determined in (b)), such that the low frequency pole
arising due to RG1 and RG2 (i.e., the lower cut-off frequency defined by Cc1, RG1 and
RG2) is at least 10 times lower than the pole found in (e).
5. For the feedback transconductance
amplifier of Fig. 4 derive expressions for A,
β, Aβ, Af , Ro, and Rof . Evaluate Af and Rof
for the case of gm1 = gm2 = 4 mA/V, RD = 20
k, ro2 = 20 k, RF = 100 , and RL = 1
k. For simplicity, neglect ro1 and take ro2
into account only when calculating output
resistances.

Fig. 4

Common questions

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The ratio of RG1/RG2 defines VGS, adjusting bias points for thermal stability and operational efficiency by maintaining a consistent threshold voltage range while adapting to potential drops. This stability ensures the transistor remains in saturation or desired region for flipping polarity requirements and enhances DC biasing edge that mitigates thermally-driven drifts.

To draw the small-signal equivalent circuit, replace all DC sources with short circuits and capacitors with open circuits at mid-band frequencies. Calculate gm from gm = 2 * ID/VGS and ro as VA/ID. Use these to find Rin, Rout, and determine AM = Vout/Vin, considering the voltage dividers formed with RL and other resistive components.

Determining poles involves identifying reactive components' time constants with nodes they influence. Use fPi = 1/(2πRiCi) for estimating poles, where Ri and Ci are the resistance-capacitance pairs effective at points of interest. The zeros come from transfer function factorization after solving for impedance paths. The lower 3 dB cutoff frequency (fL) relates to focusing on dominant low-frequency pole if any.

For mid-band voltage gain, identify transconductance gm of the MOSFET and effective load resistance RL'. The gain is given by AV = -gm * RL', where RL' includes RD and additional load contributions through parallel or cascading elements. The known parameters of kn, Vth, Vdd allow for finding VGS, ID, leading to a calculation of gm = 2 * ID / (VGS - Vt)

The contribution of reactive components is evaluated by calculating how capacitive reactance changes with frequency, especially using hand-calculated or simulated Bode plots. Internal capacitances like Cgs and Cgd influence the gain-bandwidth product and pole locations as frequency shifts. These values are typically used to form equivalent low-pass filters or assess Miller Effect implications at expected operating frequencies.

To maximize symmetric signal swing, set the quiescent point (Q-point) such that the transistor operates in the saturation region with maximum headroom. RD is calculated by setting Vds = (Vdd - ID*RD)/2 at the midpoint of the load line in ID-VDS characteristics. This aligns the DC operation for maximum symmetric swing while maintaining operation within the saturation limits.

The open-loop gain A and feedback factor β define the gain-feedback product Aβ = A*β. Af = A / (1 + Aβ) and is solved once these factors are identified. Output resistance Ro and its feedback-modified counterpart Rof are evaluated using the resistive network analysis, considering the roles of gm, RD, ro2, RF, and RL under neglect of ro1 for simplification. Rof can be adjusted based on β's effect on equivalent output impedance.

Lower and upper cutoff frequencies are determined by RC high-pass and low-pass filter characteristics, analyzing time constants of Cc1 with RG1 and RG2 (for lower cutoff) and internal capacitance like Cgs for high cutoff frequency. The bandwidth is the frequency range between these cuts, influenced by the amplifier's rapid response fall-off after upper cutoff and gain drop before lower cutoff.

The source voltage Vx at the upper transistor of a MOSFET is calculated considering the threshold voltage (VT) and the mobility-related parameter (μnCox). Drain current is influenced by VGS, VT, and the transconductance factor as per the quadratic characteristic equations of the MOSFET.

The overall voltage gain expression for a circuit with a signal generator and amplifier can be given by the product of the amplifier's voltage gain and the load effect. The unloaded voltage gain is 100, and with a connected load RL, the voltage across it becomes 4 Vpp. This can be used to back out RL using the formula for voltage division and iterating on the source resistance Rs. Generally, Rs is determined by matching the theorems, matching known values such as the unloaded and loaded output, and resolving Rs from those conditions.

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