MSS1P3, MSS1P4

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Vishay General Semiconductor
Surface-Mount Schottky Barrier Rectifiers
FEATURES
® • Very low profile - typical height of 0.65 mm Available
eSMP Series
K • Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
A • Meets MSL level 1, per J-STD-020,
Top View Bottom View LF maximum peak of 260 °C
• AEC-Q101 qualified available
MicroSMP (DO-219AD) - Automotive ordering code: base P/NHM3
Cathode • Material categorization: for definitions of compliance
Anode
please see [Link]/doc?99912

LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,
3D 3D
freewheeling, DC/DC converters, and polarity protection
3D Models
applications.

PRIMARY CHARACTERISTICS MECHANICAL DATA

IF(AV) 1.0 A Case: MicroSMP (DO-219AD)
VRRM 30 V, 40 V Molding compound meets UL 94 V-0 flammability rating
IFSM 25 A Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
VF at IF = 1.0 A 0.41 V
Base P/NHM3_X - halogen-free, RoHS-compliant, and
TJ max. 150 °C
AEC-Q101 qualified
Package MicroSMP (DO-219AD) (“_X” denotes revision code e.g. A, B,...)
Circuit configuration Single
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL MSS1P3 MSS1P4 UNIT
Device marking code 13 14
Maximum repetitive peak reverse voltage VRRM 30 40 V
Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half sine-wave
IFSM 25 A
superimposed on rated load
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C

Revision: 03-Aug-2020 1 Document Number: 89019

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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 MSS1P3, MSS1P4
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Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
IF = 0.5 A 0.41 -
TJ = 25 °C
Maximum instantaneous IF = 1.0 A 0.48 0.55
VF (1) V
forward voltage IF = 0.5 A 0.32 -
TJ = 125 °C
IF = 1.0 A 0.41 0.46
TJ = 25 °C 8.5 200 μA
Maximum reverse current Rated VR IR (2)
TJ = 125 °C 4.5 15 mA
Typical junction capacitance 4.0 V, 1 MHz CJ 50 - pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL MSS1P3 MSS1P4 UNIT
RJA (1) 125
Typical thermal resistance RJL (1) 30 °C/W
RJC (1) 40
Note
JL is measured 
(1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas R
at the terminal of cathode band. RJC is measured at the top center of the body

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
MSS1P4-M3/89A 0.006 89A 4500 7" diameter plastic tape and reel
MSS1P4HM3_A/H (1) 0.006 H 4500 7" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

1.2 0.6
D = 0.8
Average Forward Rectified Current (A)

Resistive or Inductive Load D = 0.5

D = 0.3
1.0 0.5 D = 0.2
Average Power Loss (W)

D = 0.1
0.8 0.4 D = 1.0

0.6 0.3

T
0.4 0.2

TL Measured
0.2 0.1
at the Cathode Band Terminal D = tp/T tp

0 0
0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2
Lead Temperature (°C) Average Forward Current (A)

Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics

Revision: 03-Aug-2020 2 Document Number: 89019

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 MSS1P3, MSS1P4
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Axis Title
10 10000 1000

T J = 150 °C
Instantaneous Forward Current (A)

Junction Capacitance (pF)

1 1000
T J = 125 °C
2nd line

100

0.1 100
T J = 25 °C

T J = -40 °C
0.01 10 10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 100
Instantaneous Forward Voltage (V) Reverse Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance

Axis Title
100 10000 1000
Instantaneous Reverse Current (mA)

Transient Thermal Impedance (°C/W)

TJ = 150 °C Junction to Ambient
10

1 TJ = 125 °C
1000 100
0.1
2nd line

1 t li

0.01 TJ = 25 °C

0.001
100 10
0.0001

0.00001 TJ = -40 °C

0.000001 10 1
10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100 1000
Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s)

Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

MicroSMP (DO-219AD)
0.059 (1.50) 0.030 (0.75)
Cathode Band 0.043 (1.10) 0.022 (0.55)

0.055 (1.40) 0.039 (0.98) 0.030 (0.75)

0.047 (1.20) 0.031 (0.78) 0.022 (0.55)

0.091 (2.30)
0.083 (2.10)
0.106 (2.70)
0.091 (2.30) Mounting Pad Layout
0.079
0.032
(2.00)
(0.80)

0.029 (0.73)
0.043 0.032
0.025 (0.63)
(1.10) (0.80)

0.011 (0.27)
0.005 (0.12) 0.020 (0.50)

Revision: 03-Aug-2020 3 Document Number: 89019

For technical questions within your region: DiodesAmericas@[Link], DiodesAsia@[Link], DiodesEurope@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
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Revision: 01-Jan-2023 1 Document Number: 91000