An ed from covalent Site

may jump to
Site 2 >
-

2
... Si
· ·

SEMICONDUCTOR ELECTRONICS 8 8
·
Si
the vacant site 1 (Hole) ·

CLASSIFICATION OF METALS (CONDUCTORS)

, · Ste Ho site
After such
has
a jump, the hole is at site a
eg i hole has moved from

..
I an e
INSULATORS AND SEMICONDUCTORS
. .

Site 1 to site 2 .

On thebasis of
Conductivity
·
Si

Metals : (Conductors)
·

I In presence of applied electric field , the

free 2 moves
covalent Free ed
completely independently as
182-158
resistivity bonding (Thermally
Low m as conduction e and give rise to an e
10"-108 I'm generated) current
High Conductivity in The free holes
.
more towards

Insulators : give rise to the hole current in

negative potential

Highresistin a
① Low
conductivity Total Current I =
le + It
m 18"-18m - I
At equilibrium Rate of generation = Rate of recombination of charge carriers .

Semiconductors : Note : > An intrinsic semi will behave like

-

an insulator at T =
0 K ·

resistivity conductivity or intermediate to conductors * Extrinsic Semiconductor : When a small amount

is added to pure semi-

(a few parts
& insulators per million (ppm) of a suitable impurity
: P = 183 to 10 m
of semiconductor is increased then such
-

conductor & conductivity

+ =
105 to 10 I'm semiconductors are called extrinsic semiconductors.

ON THE BASIS OF ENERGY BANDS Extrinsic Semiconductor

Energy Band : An enormously large number of energy N-type Semiconductor P-Type Semiconductor

levels closely spaced in a

very small energy range Pure Pentavalent Pure Trivalent
↑ +

constitute Si
an
energy band . or Ge Impurity SiorGe Impurity
Valence Band : The energy band which includes the energy [P ,
As , Sb Bis , He Ug [B ,
Al Ga In , TI)
, ,

levels of the valence et is called valence band The band .

M ne
...
·

She
contains valence 20 This band may be
·

partially or completely Si
8 · Free et
filled. This band is never empty .
Electrons in this band do >
- 8

donated
PSiy
· ·

AS
· ·

not contribute to electric current

8

Pentavalent Hole
8 8

Conduction Band :- The energy band above the valence

.

S
·

SiSi
· ·

band is called conduction Band ·

8 8
8 8 8

Band Gap : The difference between the highest energy in a

b and and lowest energy in the next C B .

are majority charge majority charge carriers

carrier Holes are .

band is called the band gap . Eg

higher
Sunil Jangra Physics by impurity) * Holes (donated by impurity) lies
Free electrons (donated
Y B
lies in an energy level which is present in an
.

energy level which present

Conductors/Metals Insulators Semiconductor just below conduction band .

just above valence band .

Pentavalent added in Pure

CoB C B .
C B . impurity added in pure Trivalent impurity
1111111111//ISIIIIIIIIIIIIIIII

Eg3eV
Si is called donor
impurity & the Siis called acceptor
impurity & the
VoB
Eg < Sev
energy level is called donar
energy level is calledAcceptor
energy energy
Eg 0
=
V B V B level because it donates the free level because it
.

accepts the electron

.

electrons easily to conduction band .

#
Types of Semiconductors # At thermal equilibrium
2
At thermal
equilibrium
(i) Intrinsic
. semiconductors : The pure Si or Ge
crystals are MeUn = n: MeUn = n:

called intrinsic semiconductor . covalent bonds .

re-electron concentration re-electron concentration
- Up Hole concentration
=
Up Hole concentration
=

GeGee
·
· · ·

intrinsic concentration Up intrinsic concentration

n=
M n. Up
= =
=

8 8 8

Ge
·

I =
let In
8 8 8

·
8 8 8 8 8 8

> As the temperature increases , some of shared electron pairs may - 0 0jell
-
.

breake away and thermal

energy ionises some atoms in the

lattice
crystalline and Creates a
vacancy of the charge o this

positive electronic
charge is called Hole .
 PN Junction formation : The intimate contact between N-type & Breakdown Voltage voltage across the junction reaches
: When the reverse

P-type semiconductor is called PN Junction and such device is a

sufficiently high value the reverse current suddenly tes to a large value
,

Called PN Junction diode .

RECTIFIER : The circuit which converts alternating current into direct

-
-
Potential Barrier Two Process (#
current is called Rectifier ·
P N diffusion drift
the fact that, forward bias p-n
Principle : Rectifier is based on a

· o of e e e When N-type & P-type Semiconductor junction Conducts and a reverse bias P-N Junction does not conduct .

brought in Contact then free O

· o 00 -e e e are ,
HALF WAVE RECTIFIER :

00 re e e
of N-region and free holes of P-region
· o

Holeso Selectr Vi INPUT SIGNAL

is are diffused into each other through t ↓

input
·

junction - -
t

immobile Ions

#During diffusion process of electrons and Holes the atom ,

near junction in N
OUTPUT SIGNAL
region lose their et0 form immobile by atoms in N regions
ions . The e lose
Xt
are
gained by the atoms present near junction in P-regions & form immobile Working : For the half Cycle diode is forward bias and ,
conduct. The

negative ions . Thus immobile ions accumulate near junction in small current flows through diode and output is obtained·

region - i e .
called depletion layer (Width of .
lum) . For-ve half Cycle , diode is reverse bias and do not conduct.

Due to immobile ions near junction ,

the electric field exists which is Note : Output frequency Input frequency =

acting from No p side and electric potential difference developed Efficiency 40 = .

6%

across depletion layer is called barrier potential (V).

Note : Barrier potential for Ge is 0 31 and for Si is 0 7v
. . ·
Cat 300K] Full Wave Rectifier : A full wave rectifier converts the whole cycle of

applied AC
Signal into D C .

Signal .

Di
Vi INPUT SIGNAL
t ↓

input
·
t
iv - -

Ru
Vo
-

OUTPUT SIGNAL
D, D2 D,
Forward bias of PN Junction diode : When Pside of diode is
Da Xt

connected to terminal of and N-side is connected to

Working : For
tre battery the half
Cycle diodeD is forward bias & D is reverse , ,
bias .

negative terminal of battery then diode is said to be in forward bias I e D conduct o we

get output for the half of input signal
.
.
.
,
,

P N diode D, is Reverse bias & D2 is forward bias

i (mA) For-ve half cycle .

Sunil Jangra Physics

0- G -
-
e-
Due to Forward bias
De get output ie conduct & for-ve half of
we input signal.

-
Of 0E 200 Output frequency
Holes neutralise the
Input frequency = 2x

immobile ions
00e- tre 8-ve
Efficiency 81 2 %
=
O
. .

V depletion layer vanished.

-
D
+ knee
voltage Holes Cross the
junction ,
Ripple factor= The ripple factor is a measure of
purity of the DC

rectifier , and is defined

and the current begins to flow
through junction . output of a as

of the components of
= (m
r rms value
The ideal diode has zero resistance in forward biaso =
Wave = r

Average or D C .
value

Reverse Bias of PN Junction diode : When Pside of diode is connected

to negative terminal of
battery and N side is connected to the terminal Electrical conductivity of a semiconductor
R
Resistance Semiconductor R
=
of
of battery , then diode is said to be in reverse bias E-
↓
=
·

E
PF W -N
Reverse Voltage O 0 00
-

0
A
:

↑
-0 - E-
Width of
e- -O You depletion
increases &
layer i
e
*
- Semiconductor
&
f 8

- G No =& Hole cross

the junction .
-
+

V
V

But there isvery

i(uA) i.e No current Here i jet in
= A (neve
·
=

small current flow due to minority charge carriers :

Te An eve in Anger
= =

knee voltage : In forward

biasing the voltage
,
at which the current starts i Ae (Neve + He, Vn)
=

= not
to increase is known Ae (neve + nun
rapidly cut-in knee voltage .
=
as or

~ 0 2V
.
for Ge ↓ =
NetUet Nyely =
+

Ae(HevetUU] e
OEV for Si
El
=
~