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Q1. Fig. 1 shows the transfer characteristic curve of a JFET. Write
the equation for drain current.

Fig.1

Solution. Referring to the transfer characteristic curve in Fig. 1, we

have,

Q2. A JFET has the following parameters: IDSS = 32 mA ; VGS (off) =

– 8V ; VGS = – 4.5 V. Find the value of drain current.
Solution :

Q3. A JFET has a drain current of 5 mA. If IDSS = 10 mA and VGS (off)
= – 6 V, find the value of (i) VGS and (ii) VP.
Q4. For the JFET in Fig. 2, VGS (off) = – 4V and IDSS = 12 mA.
Determine the minimum value of VDD required to put the device in
the constant-current region of operation.

Fig.2

Q5. Determine the value of drain current for the circuit shown in
Fig. 3.
 Fig.3

Solution. It is clear from Fig. 3 that VGS = – 2V. The drain current for
the circuit is given by;

Q6. When a reverse gate voltage of 15 V is applied to a JFET, the gate

current is 10−3 μA. Find the resistance between gate and source.
Solution.

Q7. When VGS of JFET changes from –3.1 V to –3 V, the drain current
changes from 1 mA to 1.3 mA. What is the value of
transconductance?

Q8. A JFET has a value of gmo = 4000 μS. Determine the value of gm
at VGS = – 3V. Given that VGS (off) = – 8V.
Q9. The datasheet of a JFET gives the following information: IDSS =
3 mA, VGS (off) = – 6V and gm (max) = 5000 μS. Determine the
transconductance for VGS = – 4V and find drain current ID at this
point.

Q10. A JFET in Fig. 4 has values of VGS (off) = – 8V and IDSS = 16 mA.
Determine the values of VGS, ID and VDS for the circuit.

Fig. 4

Solution.
Since there is no gate current, there will be no voltage drop across
RG.

Q11. Find VDS and VGS in Fig. 5, given that ID = 5 mA.

Fig. 5
Q12. The transfer characteristic of a JFET reveals that when VGS = –
5V, ID = 6.25 mA. Determine the value of RS required.
Solution.

Q13. Determine the value of RS required to self-bias a p-channel

JFET with IDSS = 25 mA, VGS (off) = 15 V and VGS = 5V.
Solution.

Q14. Select resistor values in Fig. 6 to set up an approximate

midpoint bias. The JFET parameters are : IDSS = 15 mA and VGS
(off) = – 8V. The voltage VD should be 6V (one-half of VDD).

Fig.6
Q15. In a self-bias n-channel JFET, the operating point is to be set at
ID = 1.5 mA and VDS =10 V. The JFET parameters are IDSS = 5 mA
and VGS (off) = − 2 V. Find the values of RS and RD. Given that VDD =
20 V.
Solution. Fig. 7 shows the circuit arrangement.

Fig.7
Q16. In the JFET circuit shown in Fig. 8, find (i) VDS and (ii) VGS.

Fig.8
Q17. Determine ID and VGS for the JFET with voltage-divider bias in
Fig. 9, given that VD = 7V.

Fig.9

Solution.

Q18. In an n-channel JFET biased by potential divider method, it is

desired to set the operating point at ID = 2.5 mA and VDS = 8V. If
VDD = 30 V, R1 = 1 MΩ and R2 = 500 kΩ, find the value of RS. The
parameters of JFET are IDSS = 10 mA and VGS (off) = – 5 V.
Solution. Fig. 10 shows the conditions of the problem.
 Fig.10

Q19. Draw the d.c. load line for the JFET amplifier shown in Fig. 11.
 Fig.11

Solution.

Fig. 12 shows the d.c. load line AB.

Fig.12

Q20. The JFET in the amplifier of Fig. 13 has a transconductance gm

= 1 mA/V. If the source resistance RS is very small as compared to
RG, find the voltage gain of the amplifier.
 Fig.13

Solution.
Transconductance of JFET, gm= 1 mA/V

Q21. The transconductance of a JFET used as a voltage amplifier is

3000 μmho and drain resistance is 10 kΩ. Calculate the voltage gain
of the amplifier.
Solution.

Q22. What is the r.m.s. output voltage of the unloaded amplifier in

Fig. 14? The IDSS = 8 mA, VGS (off) = – 10V and ID = 1.9 mA.
 Fig.14

Solution.

Q23. If a 4.7 kΩ load resistor is a.c. coupled to the output of the

amplifier in Fig. 15 , what is the resulting r.m.s. output voltage?

Fig.15
Solution.
The value of gm remains the same. However, the value of total a.c.
drain resistance RAC changes due to the connection of load RL (= 4.7
kΩ).

Total a.c. drain resistance, RAC = RD || RL

Q24. In a JFET amplifier, the source resistance RS is unbypassed.

Find the voltage gain of the amplifier. Given gm = 4 mS; RD = 1.5 kΩ
and RS = 560Ω.

Thus with unbypassed RS, the gain = 1.85 whereas with RS bypassed
by a capacitor, the gain is 6. Therefore, voltage gain is reduced when
RS is unbypassed.

Q25. For the JFET amplifier circuit shown in Fig. 16, calculate the
voltage gain with (i) RS bypassed by a capacitor (ii) RS unbypassed.
Fig.16
 Numericals on Oscillators
Q1. The tuned collector oscillator circuit used in the local oscillator of a radio
receiver makes use of an LC tuned circuit with L1 = 58.6 μH and C1 = 300 pF.
Calculate the frequency of oscillations.

Q2. Find the capacitance of the capacitor required to build an LC oscillator that
uses an inductance of L1 = 1 mH to produce a sine wave of frequency 1 GHz (1 GHz
= 1 × 1012 Hz).

Q3. Determine the (i) operating frequency and (ii) feedback fraction for
Colpitt’s oscillator shown in Fig. 1.
Q4. A 1 mH inductor is available. Choose the capacitor values in a Colpitts
oscillator so that f = 1 MHz and mv = 0.25.

Q5. Calculate the (i) operating frequency and (ii) feedback fraction for Hartley
oscillator shown in Fig. 2. The mutual inductance between the coils, M = 20 μH.
Q6. A 1 pF capacitor is available. Choose the inductor values in a Hartley
oscillator so that f = 1 MHz and mv = 0.2.

Q7. In the phase shift oscillator shown in Fig. 3, R1 = R2 = R3 = 1MΩ and C1 = C2 =

C3 = 68 pF. At what frequency does the circuit oscillate ?
Fig. 3

Q8. A phase shift oscillator uses 5 pF capacitors. Find the value of R to produce a
frequency of 800 kHz.

Q9. In the Wien bridge oscillator shown in Fig. 4 , R1 = R2 = 220 kΩ and C1 = C2 =

250 pF. Determine the frequency of oscillations.

Fig. 4
[Link] ac equivalent circuit of a crystal has these values: L = 1H, C = 0.01 pF, R =
1000 Ω and Cm = 20 pF. Calculate fs and fp of the crystal.

Q11. calculate a quartz crystals series resonant frequency, parallel resonant frequency
and the Quality factor of the crystal when the following points are available-

R1 = 6.8Ohm, C1 = 0.09970pF, L1 = 3mH, and C2 = 30pF

Solution:
Series resonant frequency of the crystal is –
Crystal’s parallel resonant frequency, fp is –

Now, we can understand that the series resonant frequency is 9.20 MHz and the
parallel resonant frequency is 9.23 MHz

The Q factor of this crystal will be-