TT03 ECE Pre Lab 5 – BJT
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ECE PRE LAB 5
BJT
STUDENT INFORMATION
CLASS: TT04
STUDENT ID: 2351038
FULL NAME: Hồng Phúc Khang
1. TASK 1
Read the datasheet below and answer following questions.
[Link]
Name the pins of the C1815 BJT.
Collector, Emitter, and the Base
What is the saturation VBE voltage?
VBE=1V
What is the hfe gain of the C1815?
From 70 to 700
What is the maximum VCE, VCB, VBE voltage of C1815?
VCE=50V, VCB=60V, VBE=5.0V
TT03 ECE Pre Lab 5 – BJT
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2. TASK 2
What does I-V characteristics IB = f(VBE) of BJT look like?
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3. TASK 2
How do you understand the graph below?
Cutoff region
In this region, the transistor behaves as an open switch. And the VCC voltage appears
across the collector-emitter terminals VCE due to VBB = 0, IB = 0. The PN junctions of the
BJT transistor become reverse bias and no collector current IC flows
Saturation region
When collector supply VCC = 0, and base supply is set to produce a certain base
current IB. Both of the PN junctions become forward biased. In this region, both junctions
are forward biased. Collector current IC reaches a certain largest current independent of
base current IB. In the saturation region, the voltage across collector-emitter terminals
VCE is zero.
Active region
By increasing the VCC the voltage across collector-emitter terminals VCE may increase.
As the VCE passes the 0.7V, the base-collector PN junction becomes reverse bias. And the
base-emitter is forward bias. By increasing the VCE beyond 0.7V, the collector current
TT03 ECE Pre Lab 5 – BJT
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remains constant for a given value of base current IB.
Breakdown region
By increasing the VCC, the VCE can be increased which may increase the reverse bias
of the base-collector junction.. As the BJT transistor enters the breakdown region, the
collector current will increase rapidly as the curves diagram shows. A transistor is not
used in the breakdown region.