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Switch Realization in Power Electronics

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25 views13 pages

Switch Realization in Power Electronics

Uploaded by

theteampogi
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SWITCH

REALIZATION
Introduction

In this chapter, the focus is on switch


applications using semiconductor devices and
the concept of switching loss.
Switching Loss Mechanisms
During switching transitions, energy is lost due to several mechanisms
1 When a transistor drives a clamped inductive load, it
experiences high instantaneous power loss.
2
Diode stored charge further contributes to this loss during the
transistor turn-on transition.
3
Parasitic capacitances and inductances are also lost during
switching.
4 Parasitic ringing (which decays before the end of the switching
period) indicates the presence of switching loss.
Impact of Switching Frequency:
1 Switching loss increases directly with switching frequency.
2 This imposes a maximum limit on the operating frequencies
of practical converters.
SINGLE
QUADRANT-
SWITCHES
Ideal SPST (single-pole single-throw) Switches
An SPST switch has two power terminals (labeled 1 and 0).
In the “on” state, the voltage across the switch (v) is zero, and the
current (I) is zero in the “off” state.

Fig. 1.1 SPST Switch with defined


voltage and polarities.
Passive Switches
Passive switches do not have a control terminal ©.
Their state is determined solely by the waveforms of current (i(t)) and voltage (v(t)) applied to
terminals 0 and 1.

Figure 1.2 Diode symbol


Active Switches
Active switches’ state depends on a control signal applied to the control terminal ©.
The state is not directly influenced by the waveforms v(t) and i(t) at terminals 0 and 1.
Silicon Controlled Rectifier (SCR):
A Silicon Controlled Rectifier (SCR) consists of three terminals namely Anode (A), Cathode (K),
and Gate (G) terminal. The device can be turned ON or OFF by controlling the gate input or
biasing condition of SCR.
Characteristics of Power MOSFET:
The power MOSFET behaves similarly to the BJT and IGBT.
Notably, the MOSFET can conduct current in the reverse direction.
Fig. 1.5a: SPDT Switch Fig. 1.5b: SPST Switches
Position 1: Switch A:
SPST Switch A is closed, allowing current to flow When closed, it conducts the positive inductor current
through it. This means it conducts the positive inductor ( i_A = i_L ).
current ( i_A = i_L ) When open, it blocks the positive voltage ( v_A = V_g ).
SPST Switch B is open, which means it must block the Switch B:
negative voltage ( v_B = -V_g) When closed, it conducts the positive inductor current
( i_B = i_L ).
When open, it blocks the negative voltage ( v_B = -V_g )
Position 2:
SPST Switch A is open, so it must block the positive
voltage ( v_A = V_g ).
SPST Switch B is closed, allowing current to flow
through it ( i_B = i_L ).
Position 1: Position 2:
SPST Switch A is closed, conducting the SPST Switch A is open, blocking the positive
positive inductor current ( i_A = i_L ). voltage ( v_A = V_g ).
SPST Switch B is open, blocking the negative SPST Switch B is closed, conducting the
voltage ( v_B = -V_g ). positive inductor current ( i_B = i_L ).
Operation of a single-quadrant switch
Single-Quadrant Switch: This switch can only handle current and voltage in one direction. It includes a
transistor and a diode.
Transistor On:
When the transistor is on, the diode is off because the voltage across it is negative.
The current through the transistor must be positive.
Transistor Off:
When the transistor is off, the diode turns on to allow the current to keep flowing.
The inductor voltage becomes negative, which turns the diode on.

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