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SSD Module 3 Notes
KTU 2019 scheme ECT201 Solid state devices note. This is module 3. This covers all the important topics also.
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SSD Module 3 Notes
KTU 2019 scheme ECT201 Solid state devices note. This is module 3. This covers all the important topics also.
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. MopuLt on PN TONCTIONS andl ML type semirductors are brought t0 A P-type iy Pan gunetion - Catoct cite One A@toter to form % Contatk poteatial , Vo Consider P ad type gemicondustoas , benught together to foaea a Pm junction The m- matenral has 2 ctentaadtion of elestams end Tow holes , cohereas " motion of holes and fod RP matewal has [Link] Cnuntro 6 electrons - > Wher thee 2 ions @at joined, drffusion of case lakes plate due'to Large contentaation gradients at the: junction - Thus hota defuse tom p to n ade ond electaons diffuse Faun mn 40 P- 2 This cures difusio turrt fom P to r- > wher eleetont detfuge fom vm to P, ik toavel behind immobile 61 uncompensated dose ions CNY: ) to the e motenal- > ‘ > Stmiliotly hole Laver bend ua compensated acceptor ions inthe paide Cra) , > Thus @ sve chasge is dowloped tons. the side of the Junctim. and a ye Change nar the Pp ade. > This develops aa eletle dred Serom “ve to ve charge ( it, fave n cide to p side) > Due 40 electare qantd, dart emmat & sek ep faom 1 4p p. > AE Cul Libram, there ® mo met Curaent flow atthe ect hich, means the cuqweat due to datft Canel’” deHusior Cureent- Scanned with CamScannerThane) + TrdHusiny °° Tacastty + Tacaspanony 7° 2 TAIs eeetaic qeeul bulls acp untid daft cancels dtu this is developed ia c gmail aegion. "Wi" about ve Junction and it dewlop a patutial defferente Ve avon w. >This vy is called Contact potential, banc petertial built ca poteatral on drfunin potertial. A This ctegion is catled depletion. a ae ot space charge region. - ~ Diffuccm ceourt DotFE — cusmrk Scanned with CamScannerEquations for contact poteatal, Vo At We haw, ex) = -dyeny Awl baum, drttt curut + diffusim comet =o TP ase © P duct TP asttaccen ° Pa &(x) + -Gp..d Per = Hp €Cx; UDp 4 > PO Mp &tx) = ap, d PCH) dx Ea = Pea) . Sex = .d de od. Pew Fao Binskive P dz —® \Telaton, Pp eer BPO fh 19 & tw - Ld Pix PR ow —® Cube tty te @ ao, 4 of. - ad Pe & (dem) = oho fo a “ete Ill fr ln — d_ ve) mf ees | pgrede 7 ™ “2 Meo] . per ‘pe Tr feu) - nny fu-w s ‘a(fe. ) Scanned with CamScanner@ (= Vp) = p, Vn- Vp 2° BH) de che Fon = @s tee b «gq + yy = KT ta tw 2 %p{—-© Fre + holes on P aide ae Patt hes on gm sade 7 PZ tas @ on nade = Nd te: & om Pode = MZ, ln P type: Pp = Na + oe cos CONE « maven eosr & =P a “2 2. sf P05 Swp\s ae = No Poe 2 BUI Mp EW RES Oe la atype: = Mas Nd? Majowt Comer -E i Pas Wainnat Holes: ne a “ 21 Hofer Ht Mg Mn: Peet 9 Fe YAU. @ > we KT th -Na Nth kr On ~ 2 Scanned with CamScannerGpare charge at a _juactior > Maximum etectne Field , Go 2 Width of deptetion aan, Ww Conder a pen wacom whee Pp is Lightly doped and -n it heavily doped (Na [Link]) Gasider that spare Charge wetaia the 4+cansc bot only dua +0 unesrapensated douons G acerptod tons Teg ion. is q Ny > Na age Xav Scanned with CamScannerChange duncity on Node = +9 Ng charge deity 94 Pwde + ~% Na Change = Chay change = chasge denncty K Volume s Chasge om 11 ede@ts +2 Ng A %» —~ © Change on ? wde, = -9 Nh. A (-xpe) Pade» - A- pe = Na: A- Xp ——@ a. “ONE AA: Lao = ~L Ny Aé tpo a Ny. tno = Nar Apo ——-® ® Epuabms for Hanimum deedme gud, So “the elociote geod disdetbutior wruig -the brankition. ten YU given by Porasor's eg usction -fi_ = Bh = % — ® dx> P— chawpe density é- Peamitttuty of the mnedcde O> t* =% On n Side, df 2 wink, ® 7 J 48 de : % "iy de Scanned with CamScannerb-&) = 2 Na: (40-2) -fo «© Y, NJ. Io Go = “LM ty @ E€ On ? ade, d& - -Z% dx et fo -2 My: de 5 dh das J e e *Po (0p “gt On me) & + am © %& @-@, @ To Red %b, f&uar= -d_ Wen) dx ‘Ano J Gtandx = - Vo = Aaa. po ; Amey under fen) th 2 ates Vos LW Go 9! bbe Vo = ~+LW bo = xh W:(24 Na-Sao) Vo = we Mb Lao ec 9-2. Ny xp, —@ Scanned with CamScanner% hel 2 we Xpot Lao = 14 Mo pe ( mo = No. Ws te (145) 2 _w 2 WwW “ t+ Ma a+ Ud na vd Me = w. Me © y+ Sno = WO. Me +i) hen Substitute @ ts @ Scanned with CamScanner®-> pe <= W Nd Una Substitute ° in © - (es Ve mr 2 Ns Need “Gg Neem Poy he Mh (iseaay?) 7 See po =(26 Vo MH 1 ses! at's We Xo + Xao = (aero Nd \ ( Lo) ("eye ea Energy Band _diagaamn ©) Euiliboun - 2) Forwatd brag 3) Revere bray. : i Equitibrrum + wher to biad is applied - “Paward brag» when 9A junehion iy connected wrth, @ foowatd bros vastage‘ op’. built 7 poteaBal ' Vs chaages to Wo’. This a duesta bex the erternal eleetote geld dus te bowing opposes the buitt «i potertial, thus canculg ne Overall lnc gvetd to sume entert- % GLY d wy - Scanned with CamScannerQererrt—biod- Sune, basen ts powend, mare eumet diffuse foun not and P wn. thie dyin cust tL th FB. > As extunal field opposes tunel dreld, total yetl reduas, dutt cunt 8 eduad a FB- Revere bias: Vo been Vo+Vy whee Uy y the aovesue bras Vottage. Gare udersnal aad extenaleletore qrelols ae 0 the Mne dinection , > Er wty > ddurtin cunt in negligable in RB. 4» Dik usnt YU maw am RB an Revere bias ~ Na Pealeo) PLooboe Va Scanned with CamScannerIdeal dvode Equation Appoorxiena tions unsideud Lod diods euotter: 4. Drade iy q long diode 1) bength of ny >> |, [Link] deplebon region is tormp lately depleted of mobile charge comin ard the monn ouknide the deplebia layer Is pestedly neutral. B. The P-n juach. is aberupt (step graded ) A. The cumtoets at the two ends axe Ohne: Show dove injution cordston considesed torr The Sorrword bras: $.No gent adion on tawmbiaation wrthin the deplebm rem jon 4. Diode ik ia steady Hate tndition Cre applied vwitage & de) B-The tenperaduas and doping ane in gush a cvoy rte he vnpusctves ait tannplebel ionited Dervat'on : ‘ when forward bras is apptied , holes elit fewonn P Grids Move ta 1D ade. One muath “the ‘wn? de, holes bevomo Used uakil hey math ditdun'n length bp. Peay Plone) vino arity vie hove Me ea = ab) gutlibaum So P| Mle é Pa when bias is applied, f : 2C%e-Y)er who Vp. is “the Fomwaral oy). oe ® bias voltage - Fane) % Pills " oe M. a s ne cl Scanned with CamScannerFor boo Level injection, Fp = PC Xp) 2, Umurtmaor of bode in mreubral — megren has vo thage taapard to hed at - pe - a> hp ger een) Mer v Peat) = & Mee P (aw) = me me @ The above uahn weap hig reno hele wrurtYakm at ~the of -the daoviten sogen on n side CPeans)) fomesard bias compased to ig greasy ictrieased dusing equilibrrum values (Pad val inovease 1 bole conwndoation. he ¢ at Uo wrth forward Sias is an example Conmet igjection - Eoceoss hale conantration Afn At toe edge of deranehion. megen is a APn = Plata) — Pn ———® % =P. ee e Am = PB C4 _ te WY tor_exus @ On p ade Distone “ottaswad the mw a ae eat te As ene ‘ “the amateusl in ‘x’ dvechian Distunte 6 the p materral = +2 ta W ‘a? deaachion from -ap0 Scanned with CamScannerwe hove, 8p(t) = AP. ame —® otal Go Slain + Ome’ ———@ but AR = meet ) = %o/ < Ip fo @z Splta) = mer So lapye ane TRC ino eacUL distocbubn )iheg = To Srod deHfusim Current, Wehave, Sp(a') = -ZADp- d Peed dx dro. so Ty (4a) = - 2A. Deg [ht Se] ox = -9A-Dp- a. LP (an) : seam de [beet hp) Scanned with CamScanner2) dp (aa) = — 2 ADp- aot -Afoi.e hp a Tota’) = 2ADp -Spl%) —— Y ? ty 4a xp) = -ZA Pe 8n (atp> @ O > b=, 2 -24]tp Tp (ane) = 2 A-Dp . bfn-e Tp Tp (44 =0) 2 A. Dp AR. ot = Lp it ‘In (utp 20) 2-2A Dy bn, ae La Jem Fotal ddtusin unt, 1 s 4, (4q0)-+In (xe) 1 Cowea — Ty (apo) T= 2ADp bP _ ~2ADy - Anp te La Sopra “PT An C ape) Lp IWer = 2A De Re —, —ZLA Do ny. rier i 9 om hae HN) = Ge Ph +e "ie ) SS tm dy) tie.) le Ohh the ideal deode aan. la mrevese bas, ‘vy’ thay to ov. L: 4% ie 4M /teT an a Scanned with CamScannerwt OM Na is much Longer than 4 total (ust & the “west Sedusabion Curt: tT: BEN A). -% ®> Afa= Be, : D> bap = ap (WH Ln, kK Ws Scanned with CamScanner LsContacts + ; Metal Semicond Two ‘ype: 1 ehowtky contact CRectifyng contact) a Ohme Contact Cuen reebfyng ) Wok. function: Ib is he energy sogurred to free an’ at fermi tevel t2 a porat ia vacuum - den + Metal work Function ds: Semtamductor work fuaction . Electron athnity (x): It is the ened reuiced to aemove am @ at the bottem 4 ce to a pont tA vacuum: Vocuum Lue & catled aeerenee dived « Schottky Contact Ohmic watack dn ds ten bs Metal - 1 type aC Hetal- P type 8¢ bend ds bm > be Schottky Untack CRektymg ) n te Hetal nm type 86 dar 4s a Gd Bape on bul (Atte eoatack Scanned with CamScanner74 as¥mayP) Fe 2wanay cp) 5eg Preval ¢3) uneqry mg CQ) SB7 "= pen Reuss +28 dha g —bpw Fag “promuas (3) larofg (vw) ng “33 3 o, Lt Lt QD. ep = eqn ba as OF atk wpa, TrePe) Wwojog (vo) S35 Scanned with CamScannerwa 4 : ca Fia@) shewie metal ‘and fh type Se bajore coritack: In tris 1 Case, Seren? tivel cay the. “ees is abo drat ‘it the metal a Chur dh). when both are made contac, fem? tovel 0 ~kethe metal. and ge- needs to beeeme constant (-thermal. b ehadttbenie)- ; Go" eohenevet , a metal eoith work function 2m “is brought In tovctoct witte’ Boake dunckion. 2s, charge transfers until the deren? faved align at eguitibaium . $0 the ts from she “ge Howe in 4D Anvieal thump stoDt tthe mnetal Leaving jc : { f : jon This si vel changed atoms (reading a depletion gir Ciéader an eleetric Yred. 4 rs The” tortor pattntral Ve parwmd an Jumthe, clectoun diffusion Jom se rela - r "4 os ba~ Mo = 2b,- 2h The' jurction betwen imetals and Sent conduttot, evhet Onducks Ltn, only one dimachre “js tailed reek “wntact (sehothky bare contact)“ *j ea i The petectral tamer sed bY %s 4 “tho rinekAl Ehegong to move to 60 “is calud potential “barntey hepkt Cabs) 5 8% thn gx : ’ an whea sve, valkog iy apptred to 1 ype SC cot, respect fe metal, “the $¢ to metal bam hiprt deeteales 2 cai (4 CANA mavefoor s.c to melal-The twrek due to S$loo : from se to mebd tatrreases width of depletion. region decreases: "* Revertse” bias ~ : : the ec es ee fo on type se. coat metal, dus to & glo Beye ene na The curd & Flow favo Se tp Metal TASES, ewickth 6f' depletion tegion Inereases. Scanned with CamScannerOhmic contact. ” Metal. type + te dbs > Hetal- P type + Pye ds > frend = Low aesistance Junckim provides eonducbore in both direction, beter the metal and” sc- PAE thertenal equilibavum, electauns daom the metal” move a £0 tower eneetgy states of mn. Type Ser mesuthng equrlcbonamd eri level YThis cargeshe sc Seami Level enengres relabyve 4> greta - There & mo dopletim aearon foamed 1% “this case -A Small banner %& JSonmed which tan be easly Overttomed. by Applying @ small eatennal bias vebbage - : Forwad bias: Wher -ve voltage ig appued tothe ntype 20 wear “metal, Laage 0. of @ move From se to the, metal, Such & junction called Ohmie Gunchon wrth Fonwatd bias. Reverse bias: t ue vattage applied to “te n-type So er wher metal, s Con easly Stow frome the metal to the sc - such a“ junction caued Oherie Juncker corte aevease bias. > Thus, both poe and evertse. ak bolps. in tonduchion of Current « 2 b. e s Metal pe: dn >de ec Electrons from the Sc move to Lower erngy s 3 ~ imthe metal . Wothe sc is beswrly doped, a ‘metallic. condack cai behave O4 an ohaue tohdact, inrrespechue of “the work functen. This i dus tothe very small deplibiin lager ordth, and very hiqte eCeetme a aihae othe iweb Under this. tmd tion, tunnelling of carmen take place ta betta cledechions -carits Merny Srna bias ikself - Scanned with CamScanner3, 333 5 “3. % & Faq weary o,, 7G ArI24 cp) ce} ren b | %D | oP) pi Pag preps (2) Shy 4 Vraw s s+ wnwegTnds "@) Jevagqrer pq “prone vailing vate arp ary . “be at. PER wAPa Peyus rswuy oP. -|oRPW Scanned with CamScannerCurrent Voltage Characteristics La) { Si Si Schottky p-n junction 40x10°3 + 30x10-3 | 2010-3 10x10-3 + Scanned with CamScannerBipelay Tune Transistors ( 8376) BIT 9 ‘i Tdans'storg < FET BIT has 3 separately loped regions and 2 Pn unttions: Sime both &s and holes art wvolwed v-this deve ik is called bipolar transi storms - The three Eermmals aro ealted emctter, base ond collector - « @ > Tho emitter has | Aasgert doping converteation. > Collector §& medetately doped > Base is sightly doped - > Emittyy emPts the Chasget whereas Collector collecd the charges. Thus the width of collectot is Jange Compated to emfitey- the base has Smallest widths thus It is aanaow- These 8 tenrumdls togethed Soam Pnp oy npn Ecransiston. 6 Transistod Cundmk Components us P — tep 8 oF Te © ay S =. OY Teq-Tep de : @ Te, ae @y 15 Ves 2 Shows the vawors currant coreponents Scanned with CamScanneransistot 0.178 the Forward and TOs of a pap ot " otward biased ~ biased juncin- ie, EB junction Sf and eB junction” is evertse biased « athe uncut Te dows 1a to the tutant Te tlows out of catlectoT cae The emixter doping is muir Laaget thon of base: This ersures shat euitted cunrent doamed endi rely oF holes and. Heese all will tloD tn 40 she Colleetod wrth’ a fe hates crebnbiung (1 the base - the cont dusto hole ca emitter = Tep @ + Hole uutment at collector Vides Tep @ » Reupmbinabor of holy Av te base give ~the © ' oud, Tep- Tep ® : > The @ Loot in the baw dus to aeumb natin has wo be ‘res uppuied enteinally. This currant is t. & 2 Yorie’ Zo with be injented Sao nto Pt Foard biased emitter junction - Cudand dus to cthis emitted ond @ deta i ta @ > Some @s are swept tr tb tre base at the e creverie biased collertut function dur to thermal Genes acho at -the collectoT a theo © » Teo tonist’ of both helt amoung foro. on to P CI, and: 2s mnsing from «8 ten -C Taw ) : Tu + Tpeo. + Theo Scanned with CamScannera Basie Performante Parameters : 4. Emitter adic enty od tajecttovt epicienig Cr) \e & the etfetiveney of) embiting charge — came from € to B- az Tnjeeted conned turant at €8 Junction Totol enritter current a Tep + Ten 2. Base Itanspoat Factor CBD S Etediveness o& base tn ttanpoating charge carmen) Injeeted From the emitter. te Ate = -m—@ ‘ FrawseGehows hate distoroution, | dR oe K bare duning tut off oo Syn, PO Scanned with CamScanner“EB ad ca ae Fomwar > Gaturation occurs ephert averse bias across Junin aeduced iG fa a based - the CB > Ve beeomes te valut: Span? Spee Sp a a Meg tue », Veo te Vee 20 fe Af 3 2 Rye) Ob a o AgCS) toy tan @ » Deuces has ust, fradl, saturation vtaté. Feached sptwation bo > tut osh ti > Nommal active aegion, bs > Beginning Ff Satuvatin to > Ral saturation state © fg te) Jactially if the deuce 2 : . 2 & ot wtf eegs hele dliateahe Sp lta} Eo 07 -ve volut (-pr)- : As step input is given, Ig iacrreases, hole distribubror inerearee from b & & - Che “2 >Ae drone ‘ts, dewte enters saturattor. end Arraly holé “détwbutron reaches Snal state by . : Scanned with CamScanner“sp The stoned charge ih bare (@,) has cocveased, To thereat: ond becomes Te ¥ Vee Re > There iv an erxpomential ioraease in Te when charge Bises nom Qy to Q at bs - 7 wWher bare is surtched —ve, stored charge bemns to decrease > When A> 4s, Te memarng’ constant for a storrad delay bree Ed, adter ahich Te begins 40 Fall. Wher Gb CMe, te drops eotponenz ally, when all “Hoe “tured change is temoved, recaaten. from Swtiching Choractert shies + q ts Scanned with CamScanner‘Delog bree: the bee powed when fe 48 Soom oto wr of ts 4unal value - Reve be Chai the be pewod wher te $5 frvna 10 40 qo% =F tks deal value. Stotage time Qsd): The Ame pewod when Te demresue ‘fom manimun Value to 907% af final valus- Fall, bene Cte): The rene, penod coher Ley Yi fav Tao de® 10 x of ts road Value 7 % Munontiy tatove_dibtnibution . mormal actrue reac. Inverted | acb've -- ete Saturation Teqron tu off Vegi Scanned with CamScannerMinoafty tacnier distaPbutren ond teameaal cuaaents Assume holes are injected 1A to the base seqion ak the Forward biased junetwn and these holes diffuse EO Collectod —junetion - issu peices Holes diffuse from Emitter to Collecto- 4. g. Emeited turk is made of holes, r= 4 3. Too is negli gable steady state 4. AM Lurrents ond Volages 9-70 ‘The active pant of the base ond two functrons are S ceross sectional ana, A- Curruk flow (4 the of uniforren base is esseatvatly one dimenstonal Srom € to C Solution oF aiffusior Minocity Cadmied clistri bution ( eqn tne base region pap kaansistud The secombnatrsn, Constdey a ta the eure regions one ra New t 4 ees © wi the ¢ = = whee a entering the base ak -the erated junction <7. ole Cunment leaving “the base ak “the colleetuw = 1. Scanned with CamScanner> Base width = Wb scthe eoctess hole concentration at the edge of emitter depletion. = Afe > Eateess hole Unncertaation ak the tolleckury Side of base = AR From diode ean, we have, Wet a =«%L® -1) LVEe/e me AP a (ie 7 © aM Ofte = fe 205 © f Vep >> KT ie, Sting FB “ Wes). © > be =h- e@ nn) IP Vg 220, Stony RB ce : s CO ie the can for enteess catmeds (from Corbnuiby ean) FSP lta) = Spltad soln to this ean 's Jour aie . ote [by = Oefp, Span) = Cy & ae qe r who Lp & Ue diflusion Legth for hole’. Apply boundary — tondvbons, > 1n@, When =o, Spltns0) =O +G = Ate Whlkp “blip Wher ta2b, Sp(ita= hb) = Cet ee a —©® Scanned with CamScanner—wbh, 2] Whip — a Sp (aa) 2 A%. Pale AR. e cs le OR-e aa oe Wb)ip —We lep e =< a ba Spluy = AR i Me oe] - Ate ig elec te 4] Welip —Whe Up -Collakorjmhas skrang rwerse bias ard Pa is a. Compaud ko Pg: fe is nagigable Loonpared 40 AR v. DP #0 ag potle he_le Ze) O> Sp Car) a Eyalustion of terminal turments * we hove, ae [dp Te (ditt) a = 2A Dp EF de) Tp Can) = -9.A0p-d_ a§ seta) a) : Substibate © i in 4 a 2 - pan = ~2aDp. 3. 2 [eile 2 ete) -ZADp Ge TF 140 by Teton) = - Zar ZAPF Tg alse a oO Scanned with CamScannerSolving don C, ad Co From @, C = b%-G — © Substitute © % @® hp ~W AR = (AR-G)& + Ge Whhp wef, —wh/, Ne Ae Ge Gre . me a Dre = OP.. re ( cele.) Nblip : — bP = Cy cI os) AP @ @> Cy = be-C —dk:e +AR Substituke Q ad a) Splta) =< Ge Mra Ge. ele wo), : bre - Afe-2 Me oe ake AR : re ons ese Scanned with CamScannerTo Kod Dep, Pur aso 1 en @ Tep = -2ADp ee] Lp Tep = 2ADp .(-¢] ——— @ P Substitube @ ard o i @ Mle han _ 4h - Ane Tep . “a APe-e e “er mec +e Mle) 2 AR. ag ly 1 AP wih “ly avp[ 4a (Ce fe?) € + : a a Sip e -e aT by zeosh (Hy) _ Ye L asioh (ly) eae pe. coth (Yb],) - fe: conch Lp uw ee Q Sah “2 sah (Hh, hy’) " [> To Sad Tep, Pub Aas WE in e. Mp +20 [c. @ ele] a -wb; Hl) — Cie, OR = pel -WHh, lacs) : “Otte ) a a Scanned with CamScannerwh), —Wb “1 - | Tep = 2ADp (* ae a h ae Be ap, My iy aah, cs a , ae Lp vote tp -wh, wh, = £40 | of - dhe le bp et Pe ce a | - e -e wb), hh, | = QADp [cea eke te ) Lp ub] = 2 | e oo a te br. cette hile ) = 2Ad | 24Fe 7 _ 2aD, | 2ofe _ dR. gtosh (Wel, ) be Li sinh(wely) asia (1Hip) _) Tg = 4,- Te : 2404 ae “th (Hf, ) Me coh ly) ] Tp aap [ere - Casaeh(We]yy >) — BPe- Cobhe blip) ] > : = BAB are [ented ceh Cre) + bp — coseck (| ; + Apef thle) be] [ T = ue [ae + Ak. )Ceothef,) - conc] —= 4 Scanned with CamScannerWy (bp Z, The Gtekve base cundt “WE of the base Pepin & the ditfacue betwen the total base width Who ard the depletion width of the Colectow base juiebon si to the base aregion Cmeglecting the depletion layer aide af the emfiter base junction - a | The effective base width detteasee with intreases 10 ccreverse biad of He CB, Junction: This stalled cosy eget tr bare width nodutaben. Dur to base Mdth modulation, as» severse bias on whe eoliectorr base jundhon tneveaser, Te and TE cacereaces dut to ‘ocrreate th eg, Wh detrraases which catrensed cthe Slope of mimemity cancer distr bub: $0 as the Slope inureases, Tep ord Top incrrenret- hs witth of the base reduud, the transport foatoy B increas, arumbnahon i base Teduees medueng Gy. As Bo unemeases, tneeranses, and B sacnerses. Te de 4, ep, Tep * Bt wbL By wp fh Scanned with CamScannerI} the ofp characteustict i$ exterapolated +o meet. the Vestage ani't, all the cuiues met at the tome voltage Called early vaitoge ( Va la. ~Veg Punch through epet re c I Veg is tatveased 10 a Lad valu2, gueh that Wp deeteases to the entent that the cousttod depletion ex fills the entire base- This is called punchy -throufer eget Now hele ean be directly swept dowo E te C ond transistor ahon ie lost (Tho hos to be averted ) A a Punch’
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