Module - T enpound Semicon ductors + Elemental _and Comp Tataoduction: . Basically Golids ore classified a ko 3. 4. Conductors a. Seni conductors 3. Ensulators - This classifreation based On conductivity Prope + Goto Conductors : Conduckrvity betwee to 10 eee omit eaductoart:. Maderals hewn electrical conduckivety betwen Unduetort (ituw tea) and tasulators ee ~~ 3 on! They have conduch vity betewea 1d — 10 al ct. Condushivety of o semiconductor Cart be vosied by be — Vasaced the paocess 3 doping - Conductivity can also ba changed i Eempedature, optea exeikabor and Wwuscty wnatent- Elemetal and eannpound genni emnduekors Eleeneatal 9¢ > Composed of Single Species of atoms. => Column Ww eg %, Ge Compound g¢ 2 cept od two of more speutes ot atone 1) Bra Ic Sa Gempound sc enith, “tuo elemenbs: Scanned with CamScanner> Column TW and T combinatienr- - i i a We elements adeehghtbention. of difermt colum u AAR of columa TT and VW elemats List of Binary ss WD group L compounds | T- Vi Compounds ALP XS Se AV As ZaSe Si Ge Al Sb ZoTe Gra P ca’ Ge | Gia Cd Te. InP Tnds Ta Sb Ternary Se. > Compound Se orth 3 elements ge Gafs P, AlGaks Buecrternaty sc > Compound ae wet 4 elemods tay AlGaP, Tr Gabs? Applications : Detce donnie, \ Diode, Transistors Si, Ge FETs, Monolithic Tes Si LEDs GaN, Gals, GaP Photo deteetoa CA Se, In Sb Solar cele Si, Ga As Laser G | Flowresrat Soren_| Sing” AU GaAs Scanned with CamScannerTypes af semtemducdans : Parfet sc with no impusinel OF Lottie defects. > AL OF, valenw band 2 tomapletely gesied andl cond uation bond Bb tompty. go thee ast no Charge conn ot Ok. > At Vigher tempesotuw, eleetoor- hole pains ore gurated and volene bard eledinor ate excited to Conductren baad, across -the bandgap - > Thee Rleetoon- Hole Paias CEHPs) art the only charge Come th inkainsic 8.0. 7 The enugy aac 4d baal the bd iS the Eg ¢ Bond gap amg) - No = Conentuation oP electnont ak thermal equéliboun Po = tonuntintion of hola fe 7 : te . Tatmnsic Camir Coremtiabrov. Mo = To = Q. Extmoane S.C Qa sc, Chorge COO ™o4 be purposery inteodated by eddeng tempura ia ik- This poouwk Called dopeng. No #% tu 4a) N-type Sc Hajoocty Costs - Electaing Miaomity eaarectt - holes > Atoms Grth 5 valence Es Ceoumo ¥) & adeled to the Si atm. &4> PAs Sb Scanned with CamScanner> These N-type dopants ML called Donors: b > Donors are neutval at ok, wher oceepred hoy és and beewme tvdy chaged ther they denote thera eran valent g to the CB. > $o at Go-lwok, al of he Es (a he eoap ud key dort axe dmnatid 40 Co. Such impurcty tol 3 caued donoa tewel- — ey No >> C ) pee Be f bw Pp type sc Majonity coaxed +» hols Minoerty comcast 4 eleedome > Roms with 3a valence és (tolumn TL) is adeled to the & mateacal. tq. 8, Ga, Al ack os Pp type dopants > These Potype dopants ane called Acceptors - > Th suth maternal thee UY ene bd tvnplate « That at O%, the aueptoms car meutaal, but at Arn T, they cueapt es and beewmes Svely charged + > Thus at Go-we K, all of the @ 1 the enpodacty NB deel are onupied bay the tap wiey devel «Tris 1p uscty Jevel WU coutled ateeptow devel - f Be Scanned with CamScannerAk any qeven, beraperature , Uf Steady state canaced Conveataation is matntacaed, theve ts a aecombinatyor of ekeetmene ond holes CEHPs) at the same aate at which they ane generated - Retombinakion vate (%) = Generation sate (q,) Ab any tempevatune, the vate of vetombrnation of electrons and eles (ae) if reportional *0 the Cuilibetum uontentdabin of holes (Po) and eleetvons Cn»), whee is the constant ef proporbionaltty dependrag on the vetombinatim omerhantin- Scanned with CamScanner‘Conduction Band Forbidden, Energy Gop Excitation | eletron Valence Band Valence and} Hole @ (o) Energy Band Diagram of Ininsc Semiconductor at (a)OK (b) Temperature > OK Scanned with CamScannerN - Type Semiconductors: Fig. Donation of electrons from donor level to conduction band. Scanned with CamScannerP - Type Semiconductors: Scanned with CamScannerDirect and tndireek Sef conductors Dinect 8c Tndevett = $C Dieveck se —_—— > Minvnun enetey fe fh the CB uals MA rumun eneray of & fo the VB > ie, They have Same momentum value on k value Ck=0) Sov Bs th the cg, ond holes to the vg. > @s in the eg con easily Fal to an an b . a a Gnesgy emp state ‘0 “he NB Giving of the tnetgy ex dlewente 4 as Photon of Ligkk wip chute Rok ov P Value. dr GaAs,” Applications : LEDs, Lasers Indirect se ond VB. have Aiffeunt value of k. and >@ h B, thus momentum value ate ako difoent (P= hk) > 9 FT egnnok atecombme dearecty oth a hole a the ve by eteasng a photon. > So 8 HCO ordargoes a momentum Change and Scanned with CamScannerentsgy change and wome to on inkewmediate position between CB,,, and VB, oF Heleasing a phonon - > This Sate is ta lled — ctetombrnation lewel (En) on & ot defect level, From where tk alls oF to the Von Qi0g FF energy didfewente af & photon of yt - 4- St, Ge Applecatuns : Qolav Cells - Relator between Energy Ce) and Momertim CP) EBs tem —O We know, P= MY —{z) Eok* ie, EVs Kip) te a Parabolic curve , hente both ca ad vB au tun @ be parabalic . Scanned with CamScannerEffective Mass “The movement ofaneletron m a lattice ts different foronn that sf an Rlekwon sa feree spate. Th a coystal Aadtee thee ant dots f teal Sortes dus to positively charged ions/ paotans and negatively charged ions deat which induences &@ motion ia the othe - > ~ $0 the mass of 2 to be used tana be that of individual @ {ke needs to be aba. t the eet of Internal fortes - Pemv E = 1 pe = Uke 2 RK am am Here the mows unidoted shoud be the effecbve most of 2- Cm ) O» E> Re lm des Rak Lik APR k In ~m oT (a kK uM T* —O@ Thus Frerck — demVosive of E with aesped bok if Felated to veloctty of the pavbtle Cu) de. Ke at de, + s ie om —© Scanned with CamScannerSecond derivative of E with Teed to kis inversely proportional to mass of “he paaticle- Equilibnum and Steady Skate coada'tions : PEquL baum roeans thedenal equilPhmiun. The souid has one well defined bern pertaburre ond a constant Fenton} energy - : > Skeady state means that the propertres of the system. do not Change with — beme - Nor 2hurhbrium states tan be steady states TE thee is a sowdte of enevgy to maintanr the non ehultibriunr condition - Without the Some of erevay the system Would autcky Settle tr an auttibrium State. PA Pen junction with wo voltage Applied is tan GHulbriom state - >the Pn junc disde with a vottoge applied acwss Tt, Sra omen egutlibacum , but steady state ie, Equitborium: Condition of no external excitation Cenceept Aumparatede ) ond md net oti of chasge . Steady tote. Non eg uPdibriam state ch whith Ql processes are constant and ane balanced by Opposing processes - Scanned with CamScannerFenmt Ditat Distrrbutinr Crop) 5 1 ee la on undustand the eledotcal paopentra of a du to P Semiendueoa, ip is necessary 40 uaderstaad the number of Charge eonmast|om? ta the cmateval, which #& ealud Cosme concentaation « > To obtain the equations for coc tonuntaohn , the distrbution of casio ever the avou' lable Sod yun to be studied this & done by own'ng Gatistieal methods - Pi) glu clyeng the property | «=a. behaviour of & qaoup as ow whokt instead of as am tndivideaal paritcle 3 This ic done by ausing Fert Dime Distribution fuactin, Crop) - > Uk gfves she disten’ bucdion of @s over a Tange of atowed enogy tevels at thermal equt Lebrun - Pee) = ! (e-EF as her ohare Fee) : Rami Divae Distatbur Funchon K -. Baltamann's Constant 8-62 x10 ev[k On 7 Absolute Temperature 139 x10” afk Ee Fermi energy faved / eam! Lowel Fee) Qua the pacbabitity that he enagy tavelE” ts filled by [Link] absolute benperatuee Under thamal equcliborum - At eK, . Gas Wha ESE, FCE)-= 1 _ © TEE kx a Eee /kxo 14 @ <0 Scanned with CamScannerWher ELEP fee) = a i Ee kx0 ee @ eoatl at ost Ite tO = 90 FCE>E) = oe sce FCE4 EF) = When Es EF, O> SCE=E) = \ ger Fe eT = 1 : 7 14 BIRT +t “h 2 Thus Feat devel (Ep) 1s the energy Level eet evrich Paobabittty of half being occupied by aa eleetaor- on “he donk at which the probability of Fudng -he elt is 507 a At OK, Cuive baker Tertangular distoi bution impha that “taargy every avatteble States up to Eb Ftiled orth eleetaont cad all the states above Ep fk empty. > AL Some temperature above OK Cay T,),-thae U Some pavbabslity of ce) that states above. Ep ane Fried ond a cosrerpmdin boubi ti - that Ss nce nding poobabisy fee Scanned with CamScanner“> Poobabitity FCG ese) -that a state AG above Ef 8 Aed W the sane os toe poobabitity (i— $cer-se] thet a ate AE bel Ep is empay « Pate tes [Raa = ERE] Fey Poo? : Fceep+ae)= (p+be-Ep Der fee It Fae) * aN = Peer +se)| mS ok BEd Ite let of Fee E ® Prbabiiity of that a state AC below ef i fined, &c€p- AE) So probability that o state be beow €F 8 empty '- $CEp-AE) - Fcfp- AE) a | 1 EAE DRT t ' Aer © ite - €ep-AE)D 2 1 ei ire h —AE, — At het Flite a 1c ay 7 a AE /eT teen we Diwde Ne and Dr by EA/eT SAE/eT / — E/T wi 2! 2 Lé Fk eH Sefer heer prea oa) eeeeT 46; te (er = Peeper aed Scanned with CamScannerFerme Dirac Drstavbutim apptied to mtensic and Extminsic semieonductots in intarasse 9c, No- of @ = NoxakSe= No of holes lactis cate, tho & equal no: of stake at feat of @B and VB. ie, there fe egual chan of fending an & at ce edge os thor 6 Arnding a hole at the ) ve edge- Robabstity of oeeupaney wh ee = GCE) » Vacan mM VG = | FCB) CE) = 1- FCEvD ie Contentratim of hold _ Contertration of Es i CB Ww VB Bo Becemitevel LU aLcthe widdit of bandgap. cee) = \- FCEv) te) h 2 D Ntgpe sc WN EYpe Sc, mo ef Ee ih ep ig amome tompared Kp hole conuntaatim tn ve. - FCB) >> 1 SCR Scanned with CamScanner$C Ee) >> I-Fcew) Feed : % ® P tyre se Contentratm of holes am VQ & qrester than, ew Y he ts A CB. Febey << I-Ftevy Scanned with CamScannerElectwon and Hole conemtvotiens at ecuilibmm no, p> The Feat Dine Distm’butim tar be useol tD Caltulote the eonentaations § electron § holay & A Sri ewe knovwo the densitrer of available sates m CB and VB- . ae 2. i Feenceyde ———O q wher Neende is the density of enengy aange: de - Cpos? ; So number of Ss per. unit volume ia We energy ange de is the pmeduct of pog and the proba: Lity of occupant . States per Cod th the na Lek Ne becthe effective density of states fon the distmtbutel eletoon Stated a the. CB edge - Then, No = N- $CE)D © Sek) = | ——-_- ——_ © oe CEe-Ep kt Ite 2 2 bud £p-Ep >7 KT eo 2 €& ‘a t @=>a fled “Geeesat fee 2 5 Cee FORT @= tye a Ep I/«T —___ © coh ero Ns 2(ae kT )% 1h Concentration of hates ci VO Ss f& = Ny [i- fee] ———- © Scanned with CamScannerWhere Ny is the eRechve Dos the VG. (2 I HERD © I Eig Ite G-ee o/et = Ite oi (&-€59/KT bt2 2 Get =e Ey-€ K oe Cer-t6)/eT Divide Numerator f Denomator wrth €& 1 PCy) = Lb 3Cer-Ep ler e +1 But Ep ~ Ey sokT (6-6 / eT _ fn 2 @ Udi). = ~ GEE FIT = (Ep Eve '— £(&) = 6 6) C& -&y)/: a whee ys 2 (er og Kr) 2 Mater pl (Ep -Ev. tply ® ad @ = (ee epp/er (ép-E Rt No f = Ne & oo oP = Ninh. g (een Sve - @ oy 6 Ly _ Salkt +2 Ee Eve Fou intansic mateal, Er wes ot Ef O2> nes m, ZF Edler © Scanned with CamScanner _Os °° ~(e-ev et y = NM: e @ Mauttiply (> sO i. = CEE eT - C&-ev) Re Nee : e DRT : = (Ee = Eve WP a Ni Pe =m? wae Mes Pe CE 6 eT @O» tS New My. & ' er 0 Fas - BheT Ti =) Nee Ny- Nye oo aij EG/oeT re Compare @ ond @, gre Mo Pe = mn;2| Mass Action las ia) Compare @) ad © G If Nez Ny in ©, Ec Er = eq Gp. 2 je Intrinsic del EB ts atte middle of bandgap - om Er—&y = fy, ——— @b 0,Po fateams of -w1;,P @rener Co gCEe- Er KT Om yin tee EK Suacting Scanned with CamScannerFon BR, @> mw: fh Cer Evie @> ws: oe CeBIT Equ ating ) Po = oe -£ EF-E ht fe Note : ~ Ih @, when es EP tos At piatmingte G6 Ef Lies ak As Ee moves away dom €% towards CB, - Er-er f 30% % expementa lly whe vases trom Ron ne higher valuad Cus Ee mover away davn Ee bowatds VR- Scanned with CamScannerE 4 Electrons (a) Intrinsic (b) type N(E) f(E) Ey NCE) UL-FE)) (©) p-type cma NUE) f(é) concentration Figure 3-16 : ‘Schematic band diagram, density of states, Fermi—Dirac distribution, and the carrier concentrations for {0) intrinsic, (b) ntype, and (c) ptype semiconductors at thermal equilibrium. ; Scanned with CamScannerEoceess cadens im seni unduckoas : Choage cumeutl a semiconductors whith abe extess of heir shenenat equitibmunr valul are callool gerstaded by a eneess canmert- They tar be + Opkieal extultaton. a. Electron bombardment Consider gq SemiunductoT. A photoa of eat Ww %& incident on it. if hv 263, the Photon u absorbed ta -he sc, couning excitation of és from VBR Tis derutts i the generation of EMP, Thae EHR eos of theta thamn esuttbmum values ast called etunK woaers- Oper cally generated Sond whe wateatrations are equal. NeTotal € oracentratonr No: onutlibnum € coruertrat Sa: enwrs & coammtvatron Pi Total hele Uncertrabior Poroguiriomum hole leaurtyahon SPs orcas hole torn trakyon Low tovel ia pein: WE encents caRMcr tonenntrotior (f small compared to the et ib acum majomty carmen conunivabon . 11 bre, Sp Zen (a type) iin te OD) Scanned with CamScanner“High tevel igjtion : . Sa 8p >> No Cn dpe) Sa, 8p 3>Po "Cr typed Excess carr Lidekime © Dineet Terombiination Ya dirreek rewmbinatim, & favm CO Sails into a vatunt state Chole) ir the VB and the didferonee A eneagy is melted a8 a photo: Rake vf decay OF % at MY teme EIS proportvnal to the produce of tumbt of & ond me hols gematrag at bme t Nek vote of change he & Coneenterrachin , a nee) ae [Link]* — a need. Pee? ——© th ! dion waned! (thamal gerwation _ Rewmbra: =) But we have _—_——._ 24 N= N+ 8M) 5) P= Pot SpPD ———-2¢b) Substitute 9 ) 6b) & O dlne +n) = ah nib — 00, Cro +f Sn’) (Po +8?) d Snee che + ete Ds kee ni of [Mot 80ct3] [Po + Speed) = Oy. Oly [MoPo + Po Sack) + No SPCED + Snce-SP ct) But Sock) = Speed Scanned with CamScannerey. i Oy [M0 + Po Salt) + Mo Sate? +80 ceD] = , 1i*— ay [of + Sac) [n0+Ps) + so ce3) wf = ay Hy d Mp <0 ae vo ff are huts bora? values & which ett constant: “ @» Zz Batt? = oh ni «ni ay (no fo) §nct) ey SAE) al ae Back) = 0G. Ce a oF ey gn'tt) ——® Concider. Lod Level Fajechien- Sater i Small, Bo Sa°Ce % also Small. nepett for P dyPe Po o> tle, negtet Mo @e dba) = dy Po: Ste) —— © =, Py Sa ] con & Sate? = An. Say hen 2 An-e a | Bact) = An: clea ® An: Initial enters camce Wauntration Cr=0) Gas | : Manont by cancer Qite Erme 03-Po OL z Reumbinabion Life bine A PHY i . Go In qe, oT. : O% (No+Pr) Scanned with CamScannerladtreck Aecombinatim: Trapping la tndureek vrexorabinad Semitwaductord, Gewmbimation dccuss through meombinabon Levels on Centres wrethin the bandgap Any wmpuxty oF Letpre defet G2 seve as acwmbinatin Centere, You caper ble f ereeaving camrens of one type tind subsequintly capkwaing “the opposite type of Caner, troreby aonhtebing the Pair 2 ee hole captume ee | ey The nedombination towel Er & detud wrth és. when exes electanns and hele are creodtedl , each electron- halo parr aeearmbires 0b Ey th two steps: te Hole capzurt Feting § aa eleekron Foun Ex to He vB Leaving bend an eonpty state nthe wewrmbnabor del br — Crreabrng heat energy a. Electron tapturve When @ % cB fale bp ar empty sdate ot Ex, & is Called @ capture. Scanned with CamScannerTerappin Rerombinatim tn be deloyes ae eneited back to ie omginal use of opposcte type of canwer crow — imme diately Aoermaly Yeetuted te dig te Capkwned Caner Bb thermally band bepone he cap ie, Wo electwa capbare does nok Oster hale Capua, the hole is the vB - tr keewte a hole 3 This process delays goumbna’ Capture meods 4D otek Agar bejore the reeombinatio con be Uompleted - > whe wa camer & trap ped emperam'ly at q catre and atenuted wethout reeemboabor that process 1% called — temperasny tevapping - 5 Steady state Cannver Generabiot : At eguilibetum , Generation ate = Reambinabrm rate gee) = of, me? = 0, mR —O Whea optical exettatow U warded, ® Get + dp = wv, WP = a (mo+ &) (PordP) = No Po + 8% Nodp t% MR dn + Xa Spin a= Sp cH) + 4op + % Mo Fo + Oy Mdn+%y B Sm + My Se F Wy Ny Py + Xy (no+Pe) Sa t bey. ba” bn % bnall, reget Oa Scanned with CamScannerGt) + op = Oy Mofo + My (m+ PS acs So Gop = % Crt Po) Sn Quast Fea Levels fn, Fe . Wher estes earment are present, CAudibrune Fear) Level IS meoonunrgless Ik aves nat represent Catan er Sweatta adie $o Separate quasi Fermi tevels ae depened. - Fr = Ec eoss Feat sevel for By Fo: Emeet Feam? Level ier hoes om type moden'al is Corrdenod, 1 has Ferm? tevel fe near the CB- - yo enuas capers are added, Sa-&. thu fy Close to EF Cod Similiak. to fp) but Fp 1s fas away fone fe. eg, When ereeo — earaield ae present, Fafa the dewiatvons fag Fp doom Er indecates how far, @s § hole are — = from abibrum values of av ¥ fo. mp oe {fh -E ler © ® o,?* pci hr fe np = oni pe bf Fe IIe fr-Fe er np = anj> Sent nie f, Scanned with CamScanner