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SSD Module 4

KTU 2019 scheme ECT201 Solid state devices. This is the notes of module 4. This note has covered everything from basic

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ayshazeba2005
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10 views21 pages

SSD Module 4

KTU 2019 scheme ECT201 Solid state devices. This is the notes of module 4. This note has covered everything from basic

Uploaded by

ayshazeba2005
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF or read online on Scribd
HopuLe 4 Mekal Oxide seutoduetor FET (NOSFET) n channel MOSFET < A MosretT hat teamcaals Sones), Drarn Cd), Gate (G), ond a& Sourth terminal called body or Substrate - MOS = N-channel NOSFET coomitt fF Oo P type Substrate ow which nb is how iby doped Athen Oxide tou. Separates the conducheg gate Soom $i Surface. No cussect Flows fay > t § wrthout a conduchiag j %- Channel betuxer them. ° Body | Substrrate 2Mos ig g majontty concer dewre |? The cwout throgh the tonducting channel between |g and p 5 Condnolled by voktage applied on ‘the gate. Scanned with CamScanner | Worrkrng ef | N-M0S 4. Whe ve voAinge 6 applied on the gate te Vos 49 Due to -ve mpudt at the gate, Ve charges are deposited on “the gate metal ond, +e charges ane induced ia the | Substrate- This 1b talud ACCUMULATION. 6% charge cormters beneatn the gate. This acuumuation ig dus to the P | Qtterartion of Ve charges by the | ~ve Choages deposited onthe gate- 2. Wher +ve valbage ic applied. at the gate: it Vas +O + Vig >° When aye Wadtage i applred holes |/o0 se gute, they repel the | A the 9 substaate- Ly This causes sire, tons to be Jett behind pushing “the holes away - 2 Thus “the region. bensacth the gate ts depleted ef mobile Charge Conmers, and forms DEPLETION REGION: This region | % depicted of mobile charge | cases: Scanned with CamScanner = Higher 4ve veutage led on she gate As we Voikaa2 inoveases, mont ancl | More holes taste P substrate aepels | Qwoy- When +Vve vottnge exueds Cerlain | Veukuge cated thaeshodd veutage (Vr o* Ma) 170 Jorge tye gate vattage begens | | to attrack “the mmuinorbty electaone fo +the P Substrate anol &s w-the nt segions towords ik: >The @s ae attracted beneath the gate forming a conducting path betwen 8 ond D.- and his pathy called CHANNEL: andl tk (3 Jord to le ta verted Cdnversion Layer) - Vos = Vt [> Onte the Channel is Formed, Commi tow Starts When Vs iy applied. “Threshuld vartage is the Miatmum gate Source Valbage aequined do induce ‘the channel. Vog>%th. 4. Ves > Vy, Grd Vos 48 As Vps increases, more ond Vpeae, sve edeetavas ort attrrarted towards the daar terunt- So Daou cudnt (1p) Flows foven we x TE} Dts. Lineas Tegion. > The channel ack as a wesistorThe Ohovic Vodtage chop Qumss the channel Vaneet tom) Oo near gowrce end tO Vg Nem dron end. lo This qegion is cated LiNeAR | TRIODE RE QION | PIN EAE (ROE EERON Scanned with CamScanner 5. Vos (oereases agaun. Once “the rata voltage & tmensed to “the point (that Vam Vp = Vp, tushold is barely marntaroed neo | tthe daratr 7 and te channel is Said to be — Pinched off. | ley Vp is miteased, Yip becomes -ve (\h~Vp = Ve) jp Whea the Chanel is pinded off, deviee enters saturation . \p= +e eslaacita oe) | Tneveasing the devaw vettage beyerd this pome (escent) Couses the port at whith the Channel gets pinched off to move mote and MAL to the Chanael closer tO Source - jP Due +o high depletion reer coamed at drain endl, a hgh longetudenal elector Frotd is eveated avross the channel > @s Plow davon § mw D- 2 Drarn cmont 18 now Sad to be Sotwrated ond remount Cavstart Soa even if the Us RB vatwed - Vp oa Vass — Saturatim Vr Scanned with CamScanner | | BMos Cp channel Mos) Pty some ¢ druin. MN» Substrate» Nos = +ve Aceumulsttm “of es baneatt the gate. “Caste: repels Betty Lh jubrtaate, Depretieo_ Rego domed , Scanned with CamScanner Channeh is Sorwoed when Nhs o~ve € Vas £ Vata- Crmerk So Fleas. hero \Vps a -ve. vert ‘or e appled as laoles move 19m Lowrer'to D, Ip also ‘dan $ tod \e-Vah Satusabior. Scanned with CamScanner = ~ Mescg' ts UF Een“ ESCE, KUT TPG AM Heat nog Capactio cr : MOf Capauton 1 a two tenunal Metal oarde Sew cord uctot syste Conve mmo. Mo Ss Ve Structure of Nos capaxitor 7) rf Band deagaame ay AL ewuilibwum yo Frgci) bee Ore b % ther & mo bard bending - 4b, - vnodiwed work Suatbon “or the metal - oxide atentare des Modigied adorrhy funchion. or the Se- onide ‘adterface - b) Actumulahot Vio ig Vee 40 ig cit) Ya ~ve Voltage is appkred between the metal ond semPewrductor, —ye changes ane deported on -the mekal, S Ave Charges as attumulated on the sc surface . Dut +o depor tr F —ve Changes on the metal , the Ser? tevel of metal fs craiged aelabve to Ep So the matem'al i$ moae Pp type meas, “the oa. And bard bend upward Gta) =4 PER) go the oxrle Layer bends Scanned with CamScanner la the djmection of eleetmd dreld- eh : we hove Pe Pe = a) Ak gc sutfare as” Pt Ei-Ex should cacrease, but fp is Raed. go EF must incveate- Sue press ve cuhich Magpmty COMM tonent cation tatrentes naa the Sutface than the bulk A a de S cated AccumurAaTioN (e) Depletion Vro Faq ce) Ya We vattage is capptied Am the “matal O ake depowted onthe metal and this St, tve c text of the ‘metal doumward Causes to move the Ferm? Compared to equtlibrun.- Due to ve thaiges on the rmdtal, hohe iagrele the 9¢ ase Tepelud awoy Leaving behind wey charged. tog. ‘This Causes the dotmatron of deplete ayer neo the susfate amd the Surface bewmer tom Pipe: Go Ge moves corer to EF ard the bands ben downuiged 4) Tnuersion varo hg civ) Fothe ave voltage is tneveased much Surther, tthe bands at the sc suatate bends coum wards more. Stoongly - the we Chatge. m™ the Metal attvact tne eleetowne Cornet come) th tre Ptype se’ and the sc Susface beume wW aye wmpared to bulk. This Causes the dormation of channel on the Sc - Scanned with CamScanner o<< A — -Uptsaanvy, CPI (1) Bg ~O ideal Mos Where Y= 2A Wn eh d+ SF to Ma Ven = Die - a Cone Vik = ¥, . rea + G+ 24, = la eal xox tor band ic ine “ taverwon, elkoge clenlen’ tae foomakron C-N Chartackey istyes — Hi " ¥ es dewee com's of og Capactancer 1) Cp - tasulatron Capautowe oy Cox Oxide Capacitanes, : Gate ond channel . D Cd + depretrn fapacitante bla) channel ard substrate Scanned with CamScanner Strong aversion» Nseenen | bUhn Vy cco Nos a stetong Oeuamulathion Aegon ie, More f more, hole are scuuamted meas. the surface - No depletion Tem & Formed - C4 > negligable 1 Cp > Aadge @As Ve beewmes Less mega’ ve Cd cneveases, Ci ord Cd comes A Senter. Vota eapaitoatt, C= Cd-Cr eherhve tapauitane derware Ca +r Shera aco CequstPomum) © We obtorn Hat bord valbages Beyond His dep lebvon region cordth increases: : Gwe ty Zo Cy deevensec, thus C decmeases- IpihinANegre Unt fnally ‘avermm & Texched at Vp: h- When koro, Cd decreases, Threhald 5 attoved . 5. Adtut aversion C depends en Hoe input Frequenuy of the owe sore valbage- 1) High Forno: if Cepauibente 1 measured wrth the hil Freexusnuy Signal, the vavereion, tannat eaemd 10 tas Voss ation, wn the put sgnal amplitude As a resuk efhechve auitente rernawina Vtonstat ak ibs minim value. U) Whi tapautnu 3 measnsed ewith low derecuen al, laveriion lagen Charge varies With slo0 Vanahin iat ay Scanned with CamScanner ew svanal amplitude athe depletion duater ardth * qenaca “uncharged Cq is absent ad © mreveaser bo G on Cox. Scanned with CamScanner Types of MOSFET Types of MOSFET Depletion and Enhancemmnt ede MSFETS. Tq this type, Substrate extends all the way to SiO Jayer There & mo chanoe| doped betwee s a D. ag=0 + Channel is induced chen Vag 's applied P— D “9 This MosreT operates by induerag oq enhancing —chanael. 7 » Thus ob Veg sov, ik does not Conduct So ik is called Nonmally OFF device. »hb produced when Vos>\p ~> As Vas > Nth, inversion layer is Samed - Depletion Mode MosretC D- MosFET) > In this type, there is a Channel diffused between $ and D at -the time of fabmication - > So ak Vpg= Ov, Curent can Flows between SED - Ths ik i$ Called Noamally ON device. DP Wher log = Ve, gode vepels Some of the —ve chage out of the J. channel This acreases the depletion regan ia this channel Pthis increases B and deeeases aan comet: > As Vag bewmes some ve, Ip deeneases- aqlas=0 Gy Ngge-ve $s D { & ZiAA i Le ni] p P Scanned with CamScanner MOSFET Charackewstres : Output charatost es amos - Enhancement Cenosret) 1 Daam tharattemstics Q. Taner charact ev'stres % tb ter in lebin MOSFET-nmos (Detox Fe) Dadam Chararctemstice Traufe characteurbie a at 4 Scanned with CamScanner Eapaession. for daain Current, Ip te have, - Gote vontaae, Ve ee Qs + & 6 Cox but Q&- Qa ay Bn + Chase, to don ada Uraten Ba: deprer we Leper chose Nepluk Qd. So Ags An. Qa = — COxl Vas — Vz- Nx) —© The Mewstonte of deffercatial Len OF oe Channe) ata datanee ‘a’ eS Sonat ts os fe ge & 7 =-Ara dr- -dxe <6) Aeakt, t-1 QqCa)- Ha: Ww AeWorz Le dae -d Sinte the turnund thrvugh the channel ee eal 1S toastort, -the Vartage cop diy tr @ avy = Ty dR = Ly. - Gn (0- Na W Subsbiute On O ave = -. dx — Ge Nos -\y- Voc) + Hye W Tp. de = Cons My. W C Vase Vee) - He pape om : te da = Cox: fin. W J Case MV) -dvy, 3 ° Scanned with CamScanner 2 Dos ToL = Gu He [ern 4) Ve = ve | ThL = Coos Pa W | Qes= Mr)Voe Yor 0 [Wes ';) DS “bs. | Th = Ha Con W [Gos- MD ¥bs - Vos —@ L Lz T= kp] Mos 4) Vos - Ye] ® where The avers; i Sion Aayor cheat deevenses as the channel moves in. Sorte to draca- $0 the cebual dram enrurt ewill be S$ thon that of the dsm tarot obtaned ita @ Thus Voe = Dg = Vb esaty = Myr Vy $ 0 95 font as Vos > Vos lsat ) O» ¢ 7 > = ky [Wee- e Pp [Gas- Ye Cve= 4) = Wee Ma J z # Kp PF Vas-wyt Vaso va J Toe? Be (as - ve)? om (i) hese, - aa Wos% Veg- Vang: bineok region. D2 MA: Cox. yy [Was Vn Mos i Ve" 2 W op y, os > ( the Nbs >Ves-Vew, ¢[Lo> MarCoxw (Vea Vyy al. Giy Vas £Neg, 4, ap Saturody eg ion ) Scanned with CamScanner @2: A silton mn channel MosFeT — has Mn = -3 600 cmi/e , Cox = 3X10 Flim? » We 60m, L+10 pm, Vr= FV Find the drain arent U) when Mas = av » Vog = 4M i) when Vag? 4M , Vos = 6V Anst ITy- Mn Cox: 2 o 7 Kn Cox +h # (G.-¥2) Vos - “6 2 Scanned with CamScanner A > WD Vag- Vp = 3- OF & RBN 4 Von Mn Gx W [0s-¥2) vos - vos} - 2 = Goox axio* 56 ~ 60X16 ———————— 3-OF%)el - 4 tox & (2 » +] 10 = or 00108 (16) 7010014444 ' =" ire Uh) Veg-v_ = 4-04 +33 Vas-Vt < Vos Ve6 Vos = 6V Ip fen Gon Cvas- Ys)" .* 000054 (10-64) = 0:0066¢06A —==" Scanned with CamScanner

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