Application Note

Diode

Power Loss and Thermal Design of Diodes

Diodes are used in various applications, and their circuits are diverse. This application note explains the power loss that occurs
when the circuits operate and their thermal design.

1. Types of power loss

10
There are three types of power loss that occur in diodes, each TJ (°C)
150
being calculated as the sum of the following depending on the 125

FORWARD CURRENT: IF [A]

operation of the circuit. 75
1 25
1. Forward power loss PF −25

2. Reverse power loss PR

3. Reverse recovery loss PRR 0.1

1-1. Forward power loss PF

When forward current IF flows through a diode, a voltage drop
0.01
referred to as forward voltage VF occurs (Figure 1). The power 0 100 200 300 400 500 600
loss caused by this voltage drop and the forward current is FORWARD VOLTAGE: VF [mV]

referred to as forward power loss PF. This relation can be

Figure 2. Temperature characteristics of the forward voltage
expressed with Equation (1). in a Si-SBD
RBR5LAM30A
A
IF
25
VF
Tvj(°C)
−25
20 25
K
FORWARD CURRENT: IF [A]

75
Figure 1. Forward current IF and forward voltage VF 125
175
15

𝑃𝐹 = 𝑉𝐹 × 𝐼𝐹 [𝑊] (1)
10
For Si diodes, when the temperature of the device rises
because of the power loss, current flows in the direction to 5
reduce the loss because VF has a negative temperature
coefficient. Figure 2 shows the temperature characteristics of
0
the forward voltage in a Si-SBD (Schottky barrier diode). 0 0.5 1 1.5 2
FORWARD VOLTAGE: VF [V]
For SiC-SBDs, the loss is increased in the large current range
Figure 3. Temperature characteristics of the forward voltage
since VF increases due to the increase in the operating
in a SiC-SBD
resistance as the temperature increases. Figure 3 shows the SCS320AM
temperature characteristics of the forward voltage in a SiC-
SBD.

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Power Loss and Thermal Design of Diodes Application Note

1-2. Reverse power loss PR 1-3. Reverse recovery loss PRR

When a reverse bias is applied to a diode, reverse current IR When the voltage applied to the diode is switched from forward
flows (Figure 4). The loss caused by this reverse current is bias to reverse bias, holes in the n region start returning to the
referred to as the reverse power loss. This relation can be p region. However, since the return speed is slow, the current
expressed with Equation (2). flows backward and causes a loss while the holes are
returning. The time during which the current flows backward is
IR
referred to as the reverse recovery time, which is
VR approximately 10 µs for rectifier diodes and several tens of
nanoseconds (ns) for fast recovery diodes (FRDs).

Figure 6 shows typical waveforms, where the product of the

Figure 4. Reverse voltage VR and reverse current IR
current flowing during reverse recovery time t rr and reverse
voltage VR is reverse recovery loss PRR. For switching
𝑃𝑅 = 𝑉𝑅 × 𝐼𝑅 [𝑊] (2)
waveforms as shown in the figure, the approximate equation
in Equation (3) can be used for calculation.
In the low temperature range, the reverse current is small, and
the loss is negligible. However, the reverse current increases
1
exponentially with temperature and may become non- 𝑃𝑅𝑅 ≈ 𝑉 𝐼 𝑡 𝑓 [𝑊] (3)
6 𝑅 𝑅𝑀 𝑟𝑟
negligible in the high temperature range depending on the
application. In particular, for Si-SBDs in which the reverse
In the equation, f is the operating frequency. Although the
current increases significantly at high temperatures, the heat
effect on loss is small for commercial power supplies at low
generated by power loss may lead to thermal runaway if it
frequencies of 50 to 60 Hz, at higher operating frequencies,
exceeds the heat dissipation capacity, causing device damage.
the loss is increased to several tens of nanoseconds, which is
Therefore, circuits must be designed so that the power loss at
not negligible.
high temperatures does not exceed the heat dissipation
capacity.
+
Diode voltage
VOLTAGE [V]

1000 1000 VF
175°C
0
100 100 VR
125°C
REVERSE CURRENT: IR [µA]

REVERSE CURRENT: IR [µA]

10 10
150°C
+
1 125°C Diode current
1 75°C
CURRENT [A]

IF
0.1 75°C 0.1
0
0.1 IRM
IRM
0.01 25°C 0.01 25°C

0.001 0.001 trr

Forward bias Reverse bias
0.0001 0.0001
0 50 100 150 200 0 50 100 150 200
REVERSE VOLTAGE: VR [V] REVERSE VOLTAGE: VR [V] Figure 6. Voltage and current waveforms during the transition
of the diode from forward bias to reverse bias
Fast recovery diode Schottky barrier diode
RF501BM2S RSX078BM2S

Figure 5. Temperature characteristics of the reverse current

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Power Loss and Thermal Design of Diodes Application Note

2. How to use thermal resistance (5). As shown in Figure 8, the thermal resistance from the
junction to the ambient temperature consists of the thermal
In the data sheet, two types of thermal resistance are listed:
resistance RthJC from the junction to the case, the contact
thermal resistance from the junction to the case surface RthJC
thermal resistance RthCH from the case, including the TIM to
and thermal resistance from the junction to the ambient
the heat sink, and the thermal resistance RthHA from the heat
temperature RthJA.
sink to the ambient temperature. The ambient temperature of
2-1. Thermal resistance RthJC the application must be supposed to be increased by self-
heating and the heat generation of other components.
The values of RthJC listed in the data sheet are measured by
applying the Transient Dual Interface (TDI) test method
𝑇𝐽 = (𝑅𝑡ℎ𝐽𝐶 + 𝑅𝑡ℎ𝐶𝐻 + 𝑅𝑡ℎ𝐻𝐴) × 𝑃𝐷 + 𝑇𝐴 [℃] (5)
defined in JEDEC Standard JESD 51-14.
𝑅𝑡ℎ𝐽𝐶 : Thermal resistance from the junction to the case
RthJC is shown in Figure 7. Since RthJC is measured in an
[°C/W]
environment where the package surface is in contact with the
𝑅𝑡ℎ𝐶𝐻 : Thermal resistance from the case to the heat sink
heat sink and, furthermore, other surfaces are insulated, it is
[°C/W]
assumed that the device is used in a very good cooling
𝑅𝑡ℎ𝐻𝐴 : Thermal resistance from the heat sink to the
environment where all the heat generated at the junction is
ambient temperature [°C/W]
transferred. Thus, these values can be used for the thermal
𝑃𝐷 : Power loss [W]
design of power semiconductor applications using a heat sink.
𝑇𝐴 : Ambient temperature [°C]
The case surface temperature TC is the temperature at the
boundary between the package and the thermal interface
TIM:
material (TIM), where there is no physical measurement point. Silicone grease, Heatsink
Silicone rubber sheet, RthJC
The junction temperature thus cannot be estimated with Insulating plate, etc.
Ambient
Equation (4) by measuring TC with a thermocouple. temperature: TA

𝑇𝐽 = 𝑅𝑡ℎ𝐽𝐶 × 𝑃𝐷 + 𝑇𝐶 [℃] (4) RthCH

RthHA
Junction
𝑃𝐷 : Power loss [W] temperature: TJ
Heatsink
𝑇𝐶 : Case surface temperature [°C] Die temperature: TH
Case temperature: TC

TJ TC
RthJC
TJ RthJC TC RthCH TH RthHA TA
Thermal
insulation Package Heat source PD: Power Dissipation

TIM TA
Heat sink

Figure 8. Heat dissipation equivalent circuit from the heat

Figure 7. Definition of RthJC source to the ambient environment
TC indicates the temperature at the boundary between the
package surface and the TIM.
Calculate TJ of a TO-220FM package as an example. RthJC is
2.6°C/W according to the data sheet. To determine RthCH, read
2-2. Usage example of RthJC
the thermal conductivity from the data sheet of the TIM and
In thermal design with a heat sink, in a TO package for convert it into thermal resistance with Equation (6). A heat sink
example, the junction temperature is calculated by multiplying is assumed to be used so that RthHA is 10.9°C/W. PD is 3.5 W.
the thermal resistance from the junction to the ambient Then, carry out a calculation for the case where the maximum
temperature by the power loss of the device and then adding ambient temperature in the chassis is 60°C.
the ambient temperature to the product as shown in Equation

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Power Loss and Thermal Design of Diodes Application Note

First, convert the heat conductivity of the TIM into thermal 𝑇𝐽 − 𝑇𝐴

𝑅𝑡ℎ𝐽𝐴 = [℃/𝑊] (7)
resistance with Equation (6). 𝑃𝐷

𝑇𝐽 : Junction temperature [°C]

𝑡
𝑅𝑡ℎ𝐶𝐻 ＝ [℃/𝑊] (6) 𝑇𝐴 : Ambient temperature [°C]
𝐾×𝐿×𝑊
𝑃𝐷 : Power loss [W]
𝑡 ∶ Thickness of silicone grease [m]
𝐾 ∶ Thermal conductivity [W/m∙K] 2-4. Usage example of RthJA
𝐿 ∶ Length of case contact surface [m]
Case 1
𝑊 ∶ Width of case contact surface [m]
Since through-hole components, such as TO packages,
Conditions of TIM (Pay attention to units)
have a low heat dissipation influence on PCBs, RthJA of a
Thickness of silicone grease 𝑡 = 0.1 [𝑚𝑚]
device alone is listed in the data sheet. The junction
Thermal conductivity 𝐾 = 1 [𝑊/𝑚 ∙ 𝐾]
temperature can be estimated with Equation (8) if no heat
Length of TO-220FM contact surface 𝐿 = 14.8 [𝑚𝑚]
sinks are used in an application. The ambient temperature
Width of TO-220FM contact surface 𝑊 = 9.9 [𝑚𝑚]
of the application must be supposed to be increased by self-

0.1 heating and the heat generation of other components.

𝑡 1000
𝑅𝑡ℎ𝐶𝐻 ＝ = = 0.68 [℃/𝑊]
𝐾 × 𝐿 × 𝑊 1 × 14.8 × 9.9
1000 1000 𝑇𝐽 = 𝑅𝑡ℎ𝐽𝐴 × 𝑃𝐷 + 𝑇𝐴 [℃] (8)

Next, calculate TJ by substituting the parameters for 𝑃𝐷 : Power loss [W]

Equation (5). 𝑇𝐴 : Ambient temperature [°C]

𝑇𝐽 = (2.6 + 0.68 + 10) × 3.5 + 60 = 106.5 [℃]

The junction temperature can be estimated as the following
equation when RthJA of the device alone is 70°C/W, the
2-3. Thermal resistance RthJA
power loss is 1 W, and the maximum ambient temperature
The values of RthJA listed in the data sheet are measured in in the chassis is 65°C.
the environment defined in JEDEC Standard JESD51-2A.
These values are used for comparing heat dissipation 𝑇𝐽 = 70 × 1 + 65＝135 [℃]
performance with that of other products and competing
products measured in the same environment. Case 2

Values of RthJA in a specific application are different from those RthJA can be used for the estimation of the junction
described above because the environment, such as the PCB, temperature in the circuit design phase where no boards are
is not the same as that of JEDEC. Therefore, the junction present if the variation of RthJA according to different PCBs
temperature cannot be estimated in a specific application by is understood. In this way, rough estimations are carried out
rearranging Equation (7) into an equation for calculating TJ for SMDs (Surface Mount Devices).
with RthJA listed in the data sheet. Note, however, that it can be
TJ is estimated by using Equation (8), where it is important
conditionally used only in the following usage example.
to determine which value of RthJA is used. Use a value of
RthJA listed in the data sheet, but the junction temperature
Thermal
conduction
more likely exceeds the absolute maximum rating because
TJ
Convection a margin is negative when RthJA in the data sheet is lower
than RthJA of a PCB to be completed later.
Radiation
RthJA To prevent this, use a value of RthJA so that the thermal
TA
resistance is higher than that of a PCB to be designed.
Figure 9. Definition of RthJA When a PCB to be designed is a 4-layer board, for example,

© 2024 ROHM Co., Ltd. No. 66AN090E Rev.001

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Power Loss and Thermal Design of Diodes Application Note

use a value of RthJA for a 1-layer PCB listed in the data sheet.

Table 1. RthJA of TO-252 package

JEDEC PCB RthJA (°C/W)

1 layer (1s) 132.2

4 layers (2s2p) 23.3

Since one-layer and four-layer PCBs have largely different

copper foil areas, their values of RthJA are also largely
different (Figure 10). When the junction temperature
apparently goes over due to an excessive margin, obtain
RthJA for various copper foil areas to select RthJA with an
adequate margin (Figure 11).

76.2mm
114.3mm

1 layer
(1s)
PCB

49mm2 0mm2
Top layer Bottom layer

76.2mm
114.3mm

4 layers
(2s2p)
PCB

49mm2 5505mm2 5505mm2 5505mm2

Top layer Middle 1 layer Middle 2 layer Bottom layer

Figure 10. Difference of copper foil areas between one-layer

and four-layer PCBs

90

80

70

60
RthJA (ºC/W)

50

40

30

20

10

0
0 1000 2000 3000 4000 5000 6000
Middle 1, 2 and Bottom Layer Copper Foil Area (mm2)

Figure 11. Change in RthJA for various copper foil areas

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