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Semiconductor Notes

Physics notes class 12

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19 views14 pages

Semiconductor Notes

Physics notes class 12

Uploaded by

monish.d.v
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF or read online on Scribd
jmrtensic—Serniconckchoe Whe wo. denen free = 90-—Aensing OF Noles ancy {nrrensic_ Charge. cavvied Nes nha ni Cancenration v lenevay Band Diagram for Intrendc Lonfcand, a —— Ec. re, 3 of oh yctoe the | no Pe rype leat acceptor Teri gemicoode fn f Jot lextvo. 27 [Link] Jewates 2 bole athacted by donor lean easily Filled bye. y | si- Si -covatent tna Y we very SOOM en, ss © in me type || Teopurit we 0 -o1e © A ves smoot enangy” a [[Link]..to Pree the-© Oe ff a 0.01eN - 0-05€V ig | toner impurity y pohen He ee, ler ig Freed they will OEM PY by os , od ce rove; [tne toewest possible enexgy mee 10 tn, ole - os | revel in. Ec. hi « Hence the acceptor © | The_energy tevel Ea _Caonor Jeneegy level) ties below — | the _coodtuction and _ | vatence ood tnig_smatt fe Ak veone terop Peanye- J oP Voters —band age enexgy FAL tes above = © | At_voorm temp, ; eee gop—is—easily———} | eonverted by Hex ____jexcited_to_thes2 acces, as lexcitede= 12 + fener Sviet teasing (cand _has_| behind —equot—no. — |noove et than __heles_io. poles _f0 Ev, These holes Ht Valence loos, oS —Hnexy— bove |can__atlloco—_-he Fo, ea —_ ce otitouted__berh_loy taeemod fo —e= ita tion and door cenpuscite 2 Thus_the Ev has rare _ |. hoes Hnan_e- fo Ee. I: 1 ~ i |_| "A > Ne i : ae 0 P-N_sunction diode - Sk fs a single os Of _Germaniun | silicon doped in_ |Sudb_on._T_mamex lat __one nowt _portian —_act_as__ P=type —_armdcl__cinother pal€ ack ast Hy pe--_———— Fy . \ q ' gancBKoo— x 7s Wr_bounday | ptype —et_n-type.. . A _p-kype—I_n-type_ si caystall CON_be_obt, “padding Suitable acceptor _/ donor ‘nop gi_mmelt_cohite qnwing a ougion ) Wronsriesion bho ined ty Roto a ~enystOUL.. These cuystatln 2 cat _uintto Shin stiets. Coited wabfers. | So_Semni= conductor _ -unices are oa erode _ 6 woofers ——__ unbiased _p-0_ junctions. Pe N AOQOWs'e Oa { peepee = 6 | Paes * = tS Donor } _— OTe t OOo '' 6 a@ holes es 10/0, . a | 19.9.8) 116 © @ | ! \ : a ex Ls cette natto: ¢ __-2 when pant junction ts foaned_, pasicte hos bigness —_ rata of _nolkes_and__N-side bas _thighex cont. of e7 Conc._.gradient_holes_ond_e* —begins to diffuse ___ From PN __and_N=> p . || diffuse they leave —bebied fons tabich 1.e_as_hole diffuse From P-2N they ind_-ve__acceptoc__ions____ ——}tohi.co_set_=Up__-ve_chorge layer _on_p- side _of _xegjion. 2 pond_wice versa, This set _up_om fe near the, choo From N= p side _, any holes _neax_the : Te is pushed to Pside Similarly any cond > | Symbolic Representation « Cp- junction) _||p=stole md_=ve terminal to__n-side le" near the junchoo 1s pusired FO Nesicty i CON riers Ove eee jeeasecanatey No. charge [Small vegion Jin a junction re Lvegion Ts videinity of the Juncion ehicn i. ldteptetect of Ree chowge carrier nas Coby a i loos canned depletion xegion - =the Accurutahon of -ve- Cerge aan PeRion - J *Ve Gn pregtoo Ser Up o POreOHOL vorviey Hacvoss the juncion. This acts os }catledt as barrier potentiot (Vb). /Onty e7 owing Abe _ energy eV 8 —esill_be_atie 4, |ccoss the borrier and difFusioe takes place _ Thexetore the diffusion oP __mnojodty —naxge Coreg, laccoss the _junchon ives. _xise to PIER Caran, |Rom e>N Side calted diffussion Current. the sma OO bowvier Ong Ht I. | N - Anode rrnno Caknede when ann ext..[Link] be appli ed to the pn —| : el | junction in tuo uses T) Forwoxd biased Chowack erStics.. tReet Hanes stent ee ! Foxvdexrct 8) sed Chewackersies = 2 IHexe +ve terminal 6¢ Bottery Connected to | Ve_as__a_resuit he | ‘ = yopposes—tne Va_as. th effeckive VB decreases, U7 ig NerN- energy bawier acres the junction “pre meogoxikey_chang, e_Coxvier begins to Row toxords — \ \ junctioo-— Ine Ai Sion _Of_e- 4 holes_in_depleon layer y_its jit hence —ePFechive_vessishante cress junesicn jwren—Y exceeds _V8_the majority choxqe—coxccier | gpovts—Ploding —oncess_unctioe and_ aoe = ex [padad 25 foricond Ciscrente. j.€ = Cuscrent Twi OSS aSe— eS he N var \\AAMAN PY on LV \\\\\ ~—-|HOaS_cauned depierion regio? —Laceass the juncion Tis — ack *—Onvy _e7_noving- a e” . . near Me jun chon is pushed a ee ers Oe EEE Ig the__smalt Con sequan AY —-PO— charge cor woni.on_is__ - | Seno vegion dina junction se [xegion_ ts _vidcinity of tne Jerre —_||lepleted_of fee choxge Carxciex PO? OOLY “HOM OBIIg. ve cnarge iP Vegion orenhod corvrier —_ boxvier and The _Accurnutaron—oF ger up oP os en Wb). NB will be—odle_to #Ve_Un__nvegto Caled as barrier _potentiot _ abe energy =the oxrier — and (ALFFusioe- tolees place TT lexos Thexerore_tne dius laccoss the — junchion —ives— » called difeussion Ouxent——___ Rom Pn Side co oP reo}, oviky Charge —Coereier__ _yige to_elec. Curnrne a 1yrobolic Representation Cp=n juncki > 2. nL - anode FO posonene > llworking—o& P-N_sucKon= when a ext. B.D can_ be applied _to_the pen ——__| Junction in _tuo0_vosy, —_||99 Foxwexd biased. | 1iReverse _brasect cha. eh . Eoxudaxcl Binsed heaters IHexe sve terminal s¢ Battery Connected bo. P-sickk _qnd_-ve terminal to n-side cs ee ape ePterkiva Ne _ctensenses— i ee mes 4 | \\\\\ | 8 [ i | J = | 3 f - - = © jwohen She -ve- £erminol da __conrectad. top. Sia, land une t+ve terminal (Gn _connecad te iesigy o |The appliad vol _@9 VB orn dP. Some direction, las a _ssputt tt VB_dino2cses— Promo Vet Veqy ; 7 a oo | hance typos OLrOSS_ GUND —Anetases i oO : @ | Tha_moagority chong COaniLAA NONE — ODO — frog |, U i ido _of _Aplabon to I guedien. ond _iner92ag2e4—09l. i I _aaista.nce 6) 2-N_ junction died —bernenss : rong done Rufpreme_cunsanh POUR SCI88 ja = fe my cnenge smo _ o_O discde _tneough_Rhecstasd @_bokrery, _is__connecred. go brat the voltage applied _todi ode canbe — epanged — The _roA_measuxe_the_curcent Florsing throug tne — — _| diode , Wibexease tine _Voikmeter_meosuxe—voll ee — acess Ype_diode... [pox tne Aife_value of [Link] the Value of —Cuscren js_noted— J Great swogion | oererse > eatares. of the graph: [come tuo diode 1» Awerset biased, he averse | biased _vo lrage-producas_a_very Smal curen of aby, ‘tess _mA_wohich almost renaies -¥. | Soe —get—Ppusiniing_pulsating De Voltage across er. — since the _Cukput voltage across Ri i S_ebrained Por both —Gutl_and_bale cycte of Ac. This process is. Lcalled Full_woowe_reckiFication and this arrangement lig Cotled Rill cooue ) NUMERICALS = 14-6) nate woy ve vechFication ony one shone \Ts_ebloiusd per cycte of Phe Sees Thess fore, oukpuue Frequincy of soe ALCHFien Gy lesa, [XD Gnpuk ferquancy (50423 dn fut Loose, DtchiFication we get 2 supple per cycle of thy foster oukpuk Frequency of tuts on. eck Fae 4 quot to_2% Input. Frequancy = |

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