Gradient Amplifier Design for MRI Systems
Gradient Amplifier Design for MRI Systems
Table of Contents
1 Specifications..................................................................................................4
2 Place in the MRI system..................................................................................5
3 Circuit Design..................................................................................................6
3.1 Feedback Network At∞ and Loop Gain......................................................6
3.2 Nullor Design..........................................................................................10
3.2.1 Noise, Drift & Offset.........................................................................10
3.2.2 Distortion.........................................................................................12
3.2.3 Loop Gain.........................................................................................13
3.2.4 Biasing.............................................................................................15
3.2.5 Frequency Compensation.................................................................20
3.2.6 Verification by Simulation.................................................................25
3.2.7 Revisit of the Input Stage Design.....................................................29
3.3 Robustness.............................................................................................31
3.3.1 Overload Protection: Current Limit...................................................31
3.3.2 Overload Protection: Temperature Alarm..........................................32
3.3.3 Under Voltage Lock Out....................................................................33
3.3.4 Amplifier Disable..............................................................................34
3.3.5 Input Protection................................................................................35
4 Monitoring.....................................................................................................36
4.1 Gradient Coil Current..............................................................................36
4.2 Temperature Alarm Indication.................................................................37
4.3 Supply Voltage........................................................................................37
5 Power Supply.................................................................................................38
5.1 External Power Supply............................................................................38
5.1.1 Battery Power..................................................................................38
5.1.2 Switch Mode Power Supply...............................................................39
5.2 Fuse........................................................................................................40
5.3 Filtering...................................................................................................41
5.4 Reverse Polarity Protection.....................................................................44
5.5 Soft Start................................................................................................44
6 EMI / ESD.......................................................................................................46
6.1 Cabling...................................................................................................46
6.1.1 Power Supply...................................................................................46
6.1.2 Inputs...............................................................................................46
6.1.3 Amplifier Outputs.............................................................................49
6.1.4 Monitoring Outputs..........................................................................49
6.2 Shielding.................................................................................................49
7 Circuits for PCB Layout..................................................................................50
Central in the low field MRI system is the spectrometer that controls the electronics. The
gradient amplifier delivers current to the three gradient coils to produce magnetic fields in
addition to the static magnetic field.
The spectrometer has BNC connectors to connect to both amplifiers and the magnet’s RF
coil. This means that all signals are single ended.
The magnet has banana plugs to connect the gradient amplifier to the gradient coils.
Since the gradient coils are directly located around the RF coil of the magnet, intrinsic noise
and EMI can easily couple into the RF coil and distort very weak MR signal.
+ -
- + I Lx =
V in
R1
R1
V in 10 V
This results in a feedback resistor of R1 = = = 0,66 Ω which is not a practical
I out 15 A
choice for two reasons:
1. It would produce over 150W of power dissipation in the feedback resistor.
2. The required voltage span with R1 and the load combined is more than double of that
of the load alone.
The solution in the first design was to attenuate the input signal by 20dB while adding 20dB
gain in the feedback path. This way R1 can be reduced to 1/100 of the normal value, but it
also introduces at least one extra dominant pole in the loop that has to be compensated for
to maintain stability.
A current amplifier is able to solve the dissipation problem in the feedback resistor.
+ -
- +
R 1+ R 2 Lx
I Lx = I in
R1 R2
R1
R1 can be made arbitrarily small now since it’s the combination of R1 and R2 that determine
the transfer function. ILx is independent of the load as far as the available voltage range
allows it of course.
+ - + -
- + - +
Lx
R2
R3 R1
This configuration doesn’t load the source which makes the amplifier independent of the
source impedance. To make the input robust against high voltage spikes a series resistor and
clamping diodes could be added at the cost of increased noise.
An alternative could be to leave out the first nullor and connect R3 directly between the input
voltage source and the inverting input of the second nullor. This simplifies the design and
increases robustness against high voltage spikes at the cost of reduced independence of the
source impedance.
+ -
- +
Lx
R3 R2
R1
High currents will flow in the three gradient amplifier outputs. This will lead to practically
unavoidable voltage rise of the local GND. Directly coupling the GND’s of the input sources to
the GND’s of each channel will cause significant currents in the shields of the coax cables
which is very undesirable. The voltage over the shielding because of these currents will add
to the desired driving voltage making the output currents dependent of each other.
When a difference amplifier at the input is used as an isolation barrier between the single
ended spectrometer voltage output and the gradient amplifier this has four big advantages
1. Isolation of the GND’s of the spectrometer and the amplifier
2. Suppression of common mode voltage.
3. Greatly improves robustness against large voltage spikes at the input.
4. Makes it possible to produce a steering voltage relative to the local GND at R5.
Especially the last point is of great importance since the high current will likely lift the voltage
of the GND per channel locally. Since all three channels are driven from a common ground at
the spectrometer this would otherwise result in cross coupling between the x, y, and z
channel.
R1
+ -
R1 = R3 R2 = R 4
Vin R2 - +
Lx
R3 R4 V in R 2
I Lx =
Vcm R5 R 1⋅R 5
The common mode rejection ratio of this amplifier depends on how well resistors R1,R3 and
R2,R4 match. The series resistance of Vin adds to R1 so to balance the input resistors R3 has
to be increased with the same resistance (200Ω in this case). Choosing higher values for R1 to
R4 decreases the influence of the resistance of the source.
For 1% gain error caused by Rs=200Ω, R1 and R3 must be 20kΩ. R5=5mΩ as practical lower
limit. R2 and R4 will be 150Ω to get 15A @10V or 180Ω to compensate for loss in gain and to
have some margin. R2 and R4 dominate the noise caused by the feedback network which is a
good thing. This brings the noise current density at the output to 488nA/√Hz.
+
+ -
Vin -
R3 - +
Lx
R2
Vcm R1
R1+ R 2
I Lx = V in L ≈ G⋅R 1
R1 R 3
When R1 is chosen to be 5mΩ as a practical lower limit this will produce 1,1W @ 15A and a
maximum voltage of 75mV. R3:R2 = 130:1, so R3 could be 13kΩ and R2 100Ω or even 1,3kΩ
and 10Ω. R2 will be the dominant noise source which can be significantly lower than in the
difference amplifier situation depending on the choice of R2. At 10Ω the output noise current
density is 81nA/√Hz which is an improvement of 15,5dB compared to the previous topology.
To reach 1% gain error because of limited loop gain G needs to be at least 20kA/V or if the
nullor is a CCCS H > 200k.
➔ This topology will perform better in noise rejection from outside and also produce less
intrinsic noise than the difference amplifier. The gain is independent of the source
resistance but an extra input filter is required to reach the same robustness against
voltage spikes. The extra resistance of the input filter will add negligible noise.
Shielding of the cable is also an issue that needs to be considered. A shielded twisted pair
can provide better shielding than a coax cable that is used until now. The equivalent circuit
for the feedback network is the following:
R1 = 5mΩ
R2 = 10Ω
+ -
R3 = 1,3kΩ - +
L > 100
Lx
At∞ = 1,54 A/V
R2
R3 R1
Rb0 = 10Ω
0,8 model
0,7 4 Rbmin = 2Ω
0,6 2 Is = 121 fA
0,5
0,4 0 n·VT = 30,8mV
1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
Ib
( )
gm
2
2
RBB’1,2: v n = 4 kTR B 1,49E-19 (twice)
2
Rs: v = 4 kTR S
n 1,66E-19 +
5,79E-19 → 0,76nV/√Hz
The contribution of Rs, the parallel combination of R2 and R3, is the dominant contribution to
the total noise together with the RBB’. So the noise will be mainly determined by these.
The voltage gain from input to R1 is practically 1. This input noise voltage over the 5mΩ
feedback resistor results in 152nA/√Hz at the output. That’s only 1,9 times higher than the
minimum obtainable noise from the feedback network alone. The input referred noise of the
current amplifier is 76pA/√Hz.
the cost of increased noise the bias current could be lowered a bit to reduce dissipation.
1
ID = k (V GS V TH )2
2
Parameter k is not given in MOSFET datasheets and was extracted from the ID(VGS) plot as well
as VTH that goes with it.
To get 15A out of the PFET and NFET a ΔV of 1,33V and 1,11V is required respectively at their
gates. With a rise time of 50μs a drive current of less than 1mA is needs to be driven into the
gates.
+ -
- +
Lx
Lx
R2
R3 R1 R1
➔ By placing Lx in series with R1 the output stage biasing, later in the design, becomes
simpler.
Lx R2
-gm R1 R3
Ro
R1 R3
L≈ gm ⋅ ⋅ ⋅h ⋅ Ro
R 1+(R 2+ R 3 // 2 h IE ) R 3+2 hIE FE
Ro is the parallel resistance of a biasing current source and is estimated to be 1kΩ. This
leaves gm as the only unknown, and is calculated to be 41. This is even higher than the
maximum value that will be reached, so
➔ An extra gain stage will be added between the input and output stage. This will be a
BJT CE stage since this adds the most gain.
The gain stage needs to deliver at least 1mA to the gates so a bias current of 5mA should be
enough. Now the loop gain for zero output current can be set to 100 by the bias current of
the MOSFETs of the output stage.
Lx
R2
R3 R1
Both these transistors can be used for gain or as current source etc. at various places in the
design.
Lx R2
-gm R1 R3
Ro
At zero output current the gm’s of both MOSFETs contribute about equally to the gain.
R1 R3
L≈ gm ⋅ ⋅ ⋅h ⋅hFE ⋅ Ro
R 1+(R 2+ R 3 // 2 h IE ) R 3+2 hIE FE N P
The goal of biasing is to put the active devices in a state where they can deliver the
performance that is required by the design. This means the currents that determine the
noise, slew rate and loop gain and the voltages to keep the devices in their linear range.
Two main techniques can be used in biasing:
• feedback
• feedforward
Feedback can be over all stages multiple stages or locally. Since the amplifier needs to
operate from DC it’s not possible to use filtering in the feedback network to differentiate
between the gain setting and biasing.
Feedforward can be implemented by setting VGS or IB by a trimmer and correct for
temperature drift. The large spread of both VTH and HFE makes it impossible to use
predetermined settings. Aging might require retrimming. The behavior depends on how well
the temperature correction works and how much the drain or collector current may vary
without problems. This is less favorable than feedback.
Starting from the output where the signal amplitude is the highest. The goal is to get enough
voltage range to deliver current to the gradient coil and guarantee a minimum gm with the
bias current.
Having feedback on the ID bias current is preferred but is difficult to achieve in this case. The
current can range over a factor 400. A small sense resistor is required to keep its dissipation
low at maximum current. A sense resistor of about 5mΩ would be practical, but at 38mA only
190μV is available as feedback signal. However the same goes for the current amplifier
feedback.
The bias current doesn’t need to be accurate. A range of 40mA … 250mA would be
acceptable. The other option is feedforward biasing of the MOSFETs by setting VGS of each
FET. This can best be done relative to the power supplies as the sources are connected to
them. Voltage fluctuations will have no influence this on the biasing this way.
* The importance of equal VCE and IC in the di erential stage wasn’t recognized here which led to a
dependence of the gain stage on the supply voltage.
The current sources could be the collector outputs of two CE gain stages in stead of a single
one. VGS is about 5V and the earlier chosen bias current for the gain stage is 5mA, which
makes the GS-bias resistors 1kΩ.
➔ Cross coupling the MOSFETs stabilizes the bias current at the cost of reduced linearity.
When current is flowing in one of the MOSFETs the other ones current will be
proportionally reduced until it reaches zero.
➔ A double differential input stage takes care of driving both halves of the gain stage.
Offset trimming is done by R3 and R5 which also sets the quiescent current for the
MOSFETs. When both halves of the amplifier are active this should reduce the noise by
30%.
The colored area acts as a voltage controlled current amplifier when both FETs are active. The
input voltage is across R5. R1 is the feedback resistor. Its loop
gain is only about 1 so it doesn’t accurately set the desired
current but that is taken care of by the outer loop. At zero
output all of the current through M2 is going through M1
because of the outer loop. When M2 is turned off because the
outer loop does so, the local feedback loop is broken and M1 is
not controlled by VR5 anymore. A mirrored loop is formed with
the PNP transistors of the gain stage. This means that the
quiescent current through the FETs is set by VR5 and VR3.
Having a larger VR5 means that the absolute voltage drift over temperature is larger. This drift
is coupled to R1. Lowering VR5 makes the quiescent point less sensitive to temperature
mismatch. So maybe an even lower reference voltage should be used.
➔ Temperature changes should be symmetrical at both sides of the input stage. This
only helps if the temperature coefficients are equal. So the trimming potentiometer
should be carefully chosen.
The highest sensitivity to temperature differences is from the input transistors that form the
actual DV stage. A change of 0,1°C is already enough for 0,7A extra quiescent current in the
MOSFETs. As mentioned before in 3.2.1 this causes input offset voltages of 2 or 3 orders
higher magnitude per ΔT between the positive and negative input transistors than would
occur when both transistors undergo the same ΔT. This was a reason for two matched
transistors in a single package. Extra care should be given to the thermal design of the PCB.
After trimming of the input offset voltage the drift of the output current becomes very low in
a simulation where all components have an equal temperature.
This
simplified model of the uncompensated amplifier still captures the important elements that
determine the frequency behavior. The gradient coil which is actually an LCR combination will
be modeled as a pure inductance. The differential input and gain stages are each
represented by a single BJT model but with half the Cπ and double the Rπ for the gain stage.
The input stage consists of 4 BJTs in 2 parallel pairs.
A single MOSFET is active at a time, so one or the other should be used here. The Cμ’s of the
BJTs have been left out to keep the model simple since their influence is limited by the CB
stages that follow the differential amplifier stages.
kT qI C 1 qI C
Rπ = β Cπ = gm 1,2 = gm = √2kI D
qI C 2 π f T kT 2 kT
RX1 9Ω RX2 18Ω
Cπ1 795pF Cπ2 160pF
Rπ1 217Ω Rπ2 1,1kΩ
β1 130 β2 130
RC1 100Ω RC2 500Ω
LGR 180μH; 0,4Ω; 130pF
CGS 5nF RFB1 5mΩ
CGD 500pF RFB2 10Ω
gm 25 RS 1,3kΩ
Starting with the transfer function of the output stage, this is the part that matters.
gmVI
For an ideal gradient coil without resistance and capacitance this becomes:
VO sC GD g m
=
( ) ( )
I IN 1 1 1 CGD
sC GD gm + + sC GS sC GD + +sC GS +
RC 2 RC 2 sL L
2
IO s [ RC 2 L C GD ] s[ RC 2 L gm ] 1
= 3 2
⋅
I IN s [C GS C GD RC 2 L]+ s [C GD L (g m R C 2+1)]+ s[ RC 2 (C GD +C GS )]+1 sL
The third order term is very small and only becomes relevant at very high frequencies. This is
shown in the plot below with the 3rd order model in red and the 2nd order in blue.
The peaking in the loop gain because of LC resonance isn’t something to worry about too
much. It adds loop gain and therefore accuracy. However the phase change it causes is 180º
because of the two poles, so at least one compensating zero is required for stability. These
poles are the dominant poles of the loop.
Filling in s=0 in the cascaded transfer functions HIHGHO results in the loop gain L = -91. This is
lower than the intended 100 at minimum output current, but it’s the result of previously
made choices about thermal stability and anticipated insensitivity to high dV/dt that could
turn on the MOSFETs and cause short circuiting of the power supply. Later on in the design
when this is investigated it can be seen if the loop gain can be increased a bit by increasing
the gate-source resistors. This would mean an iteration step.
This is a spice simulation of the open loop
transfer of the biased amplifier from the
previous design step. The settings that
were used:
Io = ±15A, L = 180μH ESR = 0,4Ω
This shows that P3 and P4 aren’t dominant
poles and can be ignored in the
frequency compensation. Only P1,2 need
to be considered.
τZ = √
2⋅92 a b
τZ = 11,75μs
91
Rdamp =
√ L
2C
And to prevent DC current through Rdamp a blocking capacitor should be placed in series such
that at a decade lower frequency than the resonance frequency it starts to have influence.
10
Cblock ≥
2 π f res Rdamp
The dominant parallel capacitance comes from the COSS of the MOSFETs and not just C3 in this
circuit. → Rdamp = 200Ω, Cblock = 100nF.
L2 = 64nH creates the phantom zero. R20 and C4 is the damper for self resonance. U5 is a tool
that can break the loop to measure the loop gain.
To add more attenuation for high frequencies a capacitor of 150nF and a series damping
resistor of 0,1 .. 1Ω can be placed in parallel with RF2.
The step response for 180μH shows that the slew rate dominates the pulse shape for larger
steps.
0,4nA/√Hz @ 2MHz (inductive part). The almost 200nA/√Hz is notably more than the
expected 152nA/√Hz and is caused by the op-amp noise of the current sources of the DV
stages. Noise of the voltage reference sources isn’t even included and can easily dominate.
More attention needs to go to the bias current sources.
The capacitance between the gradient coils was measured to be 700pF which is remarkably
high. Introducing a voltage coupling via 700pF to the output of the amplifier results in the
following suppression.
R1 and R2 are the current sense resistors in series with the FETs. L1 is the gradient coil. At the
position of the cursor a short current spike occurs. The amplitude is limited by the design of
the output stage which suppresses this.
The bottom grey plot shows the power dissipation of the N-FET M1. The larger spike at t=1ms
is 593μJ and happens because the output voltage changes from -6V to +15V while current
keeps flowing through M1. Then once the body diode of P-FET M2 starts to conduct the
current flow starts to change from M1 to M2. After a while when the current through L1
approaches zero another power spike occurs which is from the earlier described dV/dt. The
energy content of that pulse is 597μJ which is equal to the other pulse.
The shot noise in the collector currents is i n = √2 qI c and at 15mA per BJT gives 100pA/√Hz
combined. The bias current source should stay below that noise level if possible.
Having just a resistor between the emitters of the DV stage and the power supply would be a
great solution for noise.
RBIAS =
12V
30 mA
= 400Ω which results in i n =
R√
4 kT
= 6,4 pA/ √Hz
However that would make it sensitive to power supply voltage variations. For this reason a
current source is required for isolation.
The 83,3Ω resistor that converts the 2,5V reference voltage into 30mA also converts the input
noise voltage of the op-amp into a noise current. This sets the limit on the noise voltage to a
few nV/√Hz. Voltage references produce a lot more noise than this, so a low pass filter should
limit the noise bandwidth at the input of the op-amp.
The dependence on temperature of the input stage is as follows: T↑, β↑, IB↓, IC↑. This means
that the current source at the emitters should compensate for the change of IB in stead of
trying to create very constant bias current sources for the DV stage as it was concluded
before. See:Stability of current sources
➔ Therefore the combined collector current should be controlled in stead of the emitter
current. There is already a resistor present in the DV stage that can be used for this
purpose. This makes the output voltage of the DV stage a lot better defined.
A suitable op-amp for this purpose: ADA4084-1, -2, -4
Vsup Vos Vni Vi range Vo range BW Isc
±3V .. ±15V 20μV typ 3,9nV/√Hz ±Vsup Vn+0,3 .. Vp-1 13,9MHz ±30mA
When the three collector resistors have equal temperature coefficients and their temperature
is coupled then the feedback current source also creates insensitivity to change of the
resistances.
➔ Then there is the noise of the voltage references at the MOSFETs. A LM4040 produces
about 300nV/√Hz. This is present at the input of the gain stage and is so much that
after dividing that by the gain of the input stage it still dominates all of the other noise
sources. Low pass filtering must take care of this.
Two CB transistors have been added to improve the temperature stability of the gain stage
by keeping both VCE more equal. This helps to keep the quiescent current of the MOSFETs
more constant*. The plot on the right shows the output current and its slope against the
input voltage.
The current limit doesn’t disable the amplifier so it will continue operating when the current
drops to a normal level. When too much heat is produced a temperature alarm will disable
the amplifier and a restart is required before it can operate again.
* During testing is was found that the ΔVBE was still signi&cantly in'uencing the MOSFETs bias
current. This was because of an imbalance of IC in each branch of the di erential gain stage which
causes one BJT to heat up more than the other when the supply voltage changed. Balancing IC
makes them heat up equally. Also the CB bias voltages should have been referenced to the supplies
instead of to GND. That would make the dissipated power independent of the supply voltage.
1
=
1 1
+ ln
R
or R = R0 e
B
(T1 1
T0 ) where T is in [K]
T T0 B R0
with parameters
B R0 T0
3570K 10kΩ 25ºC + 273K
The left plot shows how the resistance changes with temperature. The plot on the right is the
transfer function of a voltage divider with the NTC connected to a supply voltage and the
fixed resistor to GND.
This circuit measures two temperatures with NTCs and compares the resulting voltage with
the reference that is set by R1 and R2. When one NTC is heated up that will lower the
threshold temperature a bit for the other by R7. The EN output goes to zero above the
threshold temperature of 72ºC. When only one NTC is heated the threshold will be about 2ºC
higher. More NTCs could be added to this circuit as long as the GND stays isolated from the
other amplifiers’ GND.
Everything right from Q4 is the UVLO detection for the positive and negative supply voltage.
The left part of the circuit is the temperature alarm of one of the channels. Voltage Tx can be
used to signal which channel tripped the temperature alarm.
Disabling functionality has been added with M4,5,7 that switch off the 2,5V bias voltages of the
amplifiers. After enabling the reference voltage rises slowly and creates a soft start for the
output stage biasing. A central logic circuit will disable all 3 amplifiers simultaneously when
one of them generates a temperature alarm or under voltage lock out.
The blue signal is the disable signal. Disabling happens immediately unlike starting.
A bi-stable flip flop with M1,2 forms the memory for an alarm. The amplifiers can be started by
shorting VDS of M1. In this case M3 takes care of that but it will be replaced by a push button.
➔ Starting is only possible when all temperatures are below the threshold and the
supply voltages are higher than 10,5V. The disable part of the circuit is part of
each of the channels.
amplifier. The disadvantage over a difference amplifier structure is the reduced robustness. A
voltage clamp and filtering are added to improve that. Two resistors connect the inputs to
GND in case no cable is connected at the input or when the GND of the spectrometer is not
connected to the gradient amplifier.
It’s also possible to add spark gaps in the PCB layout for extra ESD protection.
Differential input signals are low pass filtered from 8,2kHz. Common mode attenuation
depends very much on the equality of the filter components but also on the source
impedance. Although this is known to be 200Ω it was chosen not to correct for this in the
circuit because when the signal source is replaced by one with another source resistance the
user would have to modify the circuit. When the common mode rejection needs to be
improved an external resistor should be added by the user to match the inputs.
A disadvantage is the varying voltage as the batteries drain. This was taken into account in
the biasing step of the design by making the biasing relative to the relevant supply rail.
The 20A fuse seems like a safe choice for the application.
Each channel will be on with a limited duty cycle of about
1/3 and at most two channels will draw current from the
same power supply at the same time. In case of a failure
the batteries will be saved.
When a fuse blows while there is a large current flowing through the gradient coils that
energy needs to go somewhere. Suppose that just before the fuse blew the maximum
current of 15A was running in all three gradient coils of 1mH each. The total energy that
needs to be moved is:
3
1
EGR= ∑ L n I 2n
n=1 2
Which gives 0,34J in this case. In the beginning just after a fuse breaks the capacitors will
discharge. When the UVLO disables the amplifier and there is still current running in the
coils, this current will continue as a charge current into the other supply voltage.
When the opposite fuse is blown and the UVLO disables the amplifier, then the remaining
gradient energy will go to the decoupling capacitors. If the voltage is allowed to rise up to
18V it is possible to calculate the required capacitance.
2⋅E GR
C= 2 2
V MAX V START
The worst case situation is when VSTART is 15V which results in a 6,9mF decoupling
capacitance. This is a very acceptable value. Alternatively an anti parallel diode could be
placed at the fuses to conduct current back to the power supply when a fuse blows but there
seems no need for that.
The maximum magnetic field in the ferrite core is 176mT (1760 gauss) near the inner
diameter and 86,9mT at the outer diameter. These are very acceptable values. The AL was
measured for a single turn as intended for the application, but can also be calculated.
rOUT
L= Φ =
I
B A µ 0 µi l
I
=
2π r r
∫
1 µµl d
dr = 0 i ln OUT
IN
2π d IN ( )
This results in 0,50μH which is slightly lower than the measured value.
The minimum capacitance as determined in the fuse section is 6,9mF. The maximum RMS
current in the situation where all three channels generate the same sine wave is 15,9A.
KEMET ALS30A103DE063
R DAMP =
√
2L
C
which results in 7,7mΩ or more. The battery has 12mΩ and the capacitors 7mΩ series
resistance. So no ringing is expected even if the battery has less series resistance.
MBR40250G
The soft start circuit that limits the charge current to the capacitors during start up should
also limit the current when the polarity is reversed. The under voltage lock out will prevent
the amplifier from being enabled.
No extra signaling will be added. The voltage meters in the front panel will indicate
something is wrong with the power supply in that case.
These relays also require less power to operate than contactors. A parallel TVS diode will be
placed to prevent sparking when the controlling switch opens. Most of them have only one
switch either SPDT or SPST, so two of them will be required to switch both power supplies.
* During testing is was found a reverse current still occurred but because VEB ZENER of Q1 after
switching o the supply voltage. This conducted a current from the relay to the emitter to the now
forward biased CB diode.
6.1 Cabling
6.1.1 Power Supply
The separate GNDs of the three amplifiers will only be coupled to each other at the 20mF
decoupling capacitors. This star point is also the point where the metal enclosure is
connected to GND.
The + and – terminal of each power supply must have their own cable to keep the resistance
low, so at least four cables are required both inside and outside of the enclosure. The loop
area between each set of cables should be minimized to reduce the inductance and thereby
the magnetic flux. Twisting of the wires is preferred, but they should at least be bundled per
power supply. Short current spikes from the positive to the negative power supply can occur
during zero crossings which is why the two bundles of power cables should also be kept
close to each other. Though most of this spike current will be taken care off by the
decoupling capacitors.
6.1.2 Inputs
The differential inputs will guarantee channel isolation by design. No part of the enormous
output current can flow through the input cables and thereby cause local feedback, either
positive or negative, or even cross couple to the other channels. Since the inputs can’t
connect the GNDs of the three channels to the GND of the spectrometer this leaves the
common mode voltage at the input undefined. Resistors of 1MΩ at each input terminal are
the only parts that form a DC connection between the GND of the spectrometer and the
gradient amplifier. Somewhere along the path from the spectrometer to the PCB of the
amplifier the GNDs must be coupled to define the common mode voltage.
The outputs of the spectrometer have BNC connectors connected to their common GND so
to make the cabling easier these connectors will also be used for the amplifier. A shielded
multicore cable connection is preferred but that would be more difficult to construct for BNC
connectors. The choice for either insulated or non insulated BNC connectors should be made
now. Both have their advantages and disadvantages.
A gas discharge tube will be placed directly between the BNC terminals to further improve
ESD resilience.
2051-09-SM-RPLF
VBD = 90V, size 2051
The cable inside the enclosure that connects the BNC to the PCB mount MCX is:
415-0015-M1.0 , 90° MCX Plug to 90° MCX Plug, RG178, 50Ω, 1 m, White, OD 1,85mm
These can be cut in half to connect one side to the BNC connector. This cable should run
close to the walls of the enclosure to minimize the magnetic coupling area.
For extra common mode filtering these ferrite beads will be placed around the cable.
74270020
Ferrite Bead, Tubular, 108 ohm, WE-SAFB Series, -108 ohm, ± 25%
L = 7,5mm, OD = 7,5mm, ID = 2,4mm
measured:
L = 478nH, Rs = 315mΩ @ 300kHz L = 370nH, Rs = 690mΩ @ 1MHz
6.2 Shielding
Noise that is present on the GND of a channel is coupled through the feedback network to
the gradient coil. Especially high frequency content of a few MHz, which is in the
measurement bandwidth of the MRI RF coil, should be avoided. This can come from intrinsic
noise or from external noise sources. The enclosure should also give some shielding in both
directions. At 3MHz the wave length is 100m, so no extreme shielding measures are required
for the enclosure which matters a lot in the price.
24563-133 , 19" Subrack, EuropacPro, Kit,
Unshielded, 3U, 84, 295mm, 133mm,
427mm, 11.61"
8.1 Tracks
8.1.1 Parasitic Components
The wires of the circuit schematic do not have resistance, inductance, capacitance and time
delay. This means they have zero length. Trying to keep PCB traces as short as possible is
therefore a good rule when implementing a schematic on a circuit board. Components
should be placed in such a layout that minimizes the length of copper traces.
Copper Trace Increasing Length Increasing Width
R ↑ ↓
L ↑ ↓
C ↑ ↑
tDELAY ↑ -
This table again shows that it’s always a good idea to keep traces short. The trace width
depends on which parasitic component does the most damage. Often you want to keep
traces narrower than wider because the capacitance is more likely to degrade performance
and out of practical considerations, because narrow traces can pass more easily underneath
components. These mentioned parasitic components create a loading effect throughout the
circuit.
Mutual inductance and capacitance arise when magnetic and electric flux of a track couples
to another. So now there are also parasitic transformers and coupling capacitors. These inject
voltages and currents to other parts of the circuit and create unintended feedback loops that
could even lead to an unstable amplifier.
To reduce the resistance of high current tracks it is possible to make tracks in the solder
mask that are coated with solder by the hot air leveling step of the PCB manufacturer or
during assembly.
8.2.1 Shielding
Traces and components can have capacitive or inductive coupling with other traces or parts.
It’s the flux that couples (dΨE/dt and dΦB/dt), so to prevent flux linkage from disturbing to
sensitive parts of the circuit three things can be done in the layout of the PCB:
• minimize the area where E + M flux can couple ( surface area and cos(φ))
• keeping distance
• redirect E + M flux by shielding
• reduce flux production by using short wide tracks close to each other (low L) for high
dI/dt and short narrow tracks (low C) for high dV/dt sources.
δ=
√ ωµ
2ρ
The magnetic field reduces by 63% per δ. If 2δ is assumed to be thick enough for shielding
then the GND plane becomes effective above 14MHz for a single layer and 3,5MHz for two
layers of shielding.
➔ The bandwidth of the gradient amplifier is about 10kHz so the GND plane will only
work as an electric shield and have almost no effect on the magnetic field formed by
the 15A output current.
The magnetic field lines see 1δ copper for 10kHz when the magnetic field is under an angle
of 3º with the GND plane.
The GND plane can shield the high dΨE/dt coming from the wide track of the output of the
amplifier that also has high dV/dt when a MOSFET starts or stops conducting current back
into the power supply.
➔ By placing the GND plane at inner layer 1 the coupling capacitance between the
output and the GND plane is 66% lower than if it were placed at inner layer 2. This
makes it harder for the output current to flow through the local GND plane which was
mentioned in the grounding design philosophy in 6.1.2.
compensation inductor in the feedback network. Since the feedback current is 2000 times
smaller than the output current even a small impedance in the widest track of the PCB would
still result in more voltage drop than in a separate relatively long trace with very little current.
➔ When the heat is spread out over a larger area than the TO247 package by
using thermal grease and a metal plate and then couples through the
thermal insulating pad, this will significantly reduce the overall thermal
resistance while maintaining electrical insulation.
An aluminium heat spreader about six times larger than the TO247 package reduces RTH-CS to
only 0,05ºC/W.
At 15V supply voltage and 0,4Ω coil resistance IPEAK would be 18,75A which is higher than the
maximum current of 15A, but if the input voltage is 12,5V it could happen. In that extreme
case 141W of heat is produced. Under normal conditions when the maximum input voltage is
10V it would be 135W. When a 12V battery is used it drops to 90W maximum. If the combined
RTH-JC is 0,3ºC/W this results in a temperature rise ΔT between the junction and the heat sink of
40,5ºC at 135W.
Three amplifiers produce heat that needs to be removed by a single heat sink. If the ambient
temperature is 30ºC then a total power of 3x135W should result in less than 150-30-41 =
79ºC.
➔ This means that the heat sink should have a thermal resistance of less than 0,2ºC/W
which is possible with forced air cooling.
Especially the heat sinks that have an air chamber between the fan and the heat sink have a
very low thermal resistance.
Fischer LA V series heat sinks
original
modified
and is clamped by the TVS diode P6KE39CA at its terminals. This AC plot shows only the step.
The relays switch off immediately after the main switch is switched off.
V23134-J1052-D624 12V ++1912; Lrelay = 202mH, Rrelay = 98Ω (@50Hz)
It seemed that the aluminum spacer rings of 2,5mm thick did not result in a low contacts
resistance, even after flattening their surfaces. Originally RVS screws were used which did not
help a lot in the contact resistance. After replacing them by brass screws the contact
resistance dropped to 14,6mΩ.
➔ Brass screws help in making low resistance connections
Vp GND Vn
These measurements show -15A pulses; Vin (Red), Iout (Blue), Vripple (Green). The power
supply had a 10A current limit which is why at the end of the pulse the voltage drop
increases.
Making this coupling between the MOSFETs and thermistors was a bit difficult to do with the
thermal pad that also isolates the heat spreader from the heat sink.
The measurement shows the signal that was picked up by the RG58 coax cable with the
shielding stripped from 2 cm at the end. At the location of the PCB it was very well
suppressed because of the distance and electrical shielding from the heatsink.
At
a 15A step the output starts to limit the slew rate because of clipping to the supply rail.
Stable operation was shown between the range of 36µH to 213µH. Other coils were not
available.
Iout(Vin)
20
y = -1,524x - 0,148
R² = 1,000
15
10
y = -1,039x - 0,009
R² = 1,000
5
0
-15 -10 -5 0 5 10 15
-5
-10
-15
-20
XY -65dB XZ -64dB
When all three coils are wound on top of each other to deliberately create worst case
coupling the amplifiers showed unstable behavior by low amplitude high frequency
oscillations.
➔ It turned out that the negative output terminal was
sensitive to current injection. This could be either
capacitive or inductive. The feedback loop would
compensate for this and create a coupling back to the
other coils.
To solve this the bandwidth of the feedback network was limited
with a 100nF capacitor to GND at the input of the amplifiers. The
modified feedback network is shown below.
results in -123dBm in 1Hz. The minimum thermal noise power kTB = -174dBm in 1Hz so it is
51dB above that. This proved to be a problem for the MRI setup because the shielding
between the gradient coils and the RF coil was significantly less than that.
➔ The importance of having both low noise output current and -voltage was
underestimated. The focus was mainly on the noise current because it was assumed
that the electrical shielding could easily be very effective, making voltage noise less
relevant. This turned out not to be the case.
The inductance at the output of the current amplifier gives it a high voltage gain for the input
noise at higher frequencies. A way to avoid this is by adding a notch filter to the output that
blocks the noise at 2MHz where the MRI is operating.
Together with the shielding this should remove the EMI from the gradient coils to the RF coil
completely.