Course Code : ENT 201/EDT 201 CXDW/RW – 18 / 5027
Third Semester B. E. (Electronics Engineering/Electronics Design
Technology) Examination
ELECTRONIC DEVICES
Time : 3 Hours ] [ Max. Marks : 60
Instructions to Candidates :—
(1) In Question–One solve any Five sub qestions.
(2) Que–Two, Que–Three, Que–Four, Que–Five, and Que–Six are compulsory.
(3) All questions carry marks as indicated.
(4) Illustrate your answers wherever necessary with the help of neat sketches.
(5) Assume suitable data wherever necessary.
1. Solve any Five :—
(a) An ideal germanium p–n junction diode has at a temperature of 1250C
a reverse saturation current of 30 µA. At a temperature of 1250C, determine
the dynamic resistance for a 0.2 V bias in :
(i) The forward direction.
(ii) The reverse direction. 2(CO 2)
(b) How will you use transistor as an Electronic Switch ? Draw its circuit
diagram and corresponding waveforms. 2(CO 2)
(c) Determine the quiescent currents and the collector to emitter voltage for
a silicon transistor with β = 50 in the self–biasing arrangement shown in
Figure–1(c). The circuit component values are VCC = 20 V, RC = 2 K,
Re = 0.1 K, R1 = 100 K, and R2 = 5 K.
2(CO 2)
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(d) Enumerate the important characteristics in which the field–effect transistor (FET)
differs from the bipolar junction transistor. 2(CO 2)
(e) Define the hybrid parameter h11, h12, h21 and h22 of a two–port network
having an active device but no reactive elements. 2(CO 3)
(f) Sketch typical SCR forward and reverse characteristics and indicate all regions
of the characteristics and all important current and voltage levels.
2(CO 4)
(g) Estimate typical values of the wavelength corresponding to the energy gap
EG = 1.1 eV for Si, and EG = 0.72 eV for Ge at room temperature.
2(CO 4)
2. (a) Consider a single–phase bridge rectifier with the transformer secondary winding
voltage of 35 V rms. The load consists of a 40µF capacitor in parallel
with a 250Ω resistor. The diode and transformer resistances and leakage
resistances may be neglected. Assume that the power–line frequency is 50
Hz. Evaluate the following parameters of the rectifier.
(i) The dc current I dc flowing through the load.
(ii) Peak–to–peak amplitude of ripple voltage, V r .
(iii) Ripple factor of the rectifier–filter output.
(iv) Efficiency of the rectifier. 5(CO 1)
(b) The DC regulated power supply employs a Zener diode as voltage regulator
as shown in Figure–1(b). Where Vs = 45 V, Rs = 1 kΩ and D3 is an ideal
Zener diode with Vz = 10 V and maximum current rating Izmax=30 mA.
(i) Determine the range of R L and I L that will result in V L being
maintained at 10 V.
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(ii) Determine maximum power rating of the Zener diode as a voltage
regulator. 5(CO 1)
3. (a) An Engineering student has biased a silicon transistor with β = 50,
VBE = 0.6 V, VCC = 22.5 V, and RC = 5.6 kΩ, as shown in Figure–3(a), with
a desire to establish a Q–point at VCE = 12 V,
IC = 1.5 mA, and a stability factor S i 3.
(i) Identify the biasing technique used by that student in the circuit
shown in Figure–3(a).
(ii) Compute Re, R 1 , and R 2.
5(CO 1,CO 2)
(b) Identify the mode of operation of the transistor used in the circuit shown
in Figure–3(b).
3(CO 1,CO 2)
CXDW/RW-18 / 5027 3 Contd.
(c) The selection of an operating point Q depends upon a number of factors.
List all the factors which influence the operating point. 2(CO 1,CO 2)
4. (a) Explain the working principle of a photodiode and discuss any real–time
application of photodiode with the aid of a block schematic. 3(CO 4)
(b) The amplifier circuit shown in Figure–4(a) uses a transistor whose h–parameters
are given in table below.
Parameters h ie hre hfe hoe
CE 1100 Ω 2.5x10–4 50 25 µA/V
Io
Compute A1 = — , Av, Avs, Ro, and Ri.
Ii
7(CO 3)
5. (a) Draw the basic structure of an n–channel JFET and its CS drain characteristics.
Also, explain the shape of these curves qualitatively, 4(CO 2)
(b) The MOSFET in the circuit shown in Figure–5(b) has VT = 1 V, and
µn Cox (W/L) = 1 mA/V2. Determine the drain current and the drain voltage
for the following cases :
(i) V G = 0.5 V, R D = 1kΩ
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(ii) V G = 2 V, R D = 1kΩ
(iii) V G = 2 V, R D = 10kΩ
6(CO 2)
6. (a) Design a Fan speed control circuit using TRIAC and explain its working
principle qualitatively. 5(CO 1,CO 4,CO 5)
(b) SCRs are mainly used in circuits where the control of high power, possibly
coupled with high voltage, is demanded. For Ex, SCRs are used for rectification
of high–power AC in high–voltage dc power transmission. Could you explain
the working principle of single–phase controlled rectifier with the aid of circuit
diagram and input–output waveforms ? 5(CO 1,CO 4,CO 5)
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