* Tatrinsic dic calle wana 7 ee Ss es FS te Ho tpi but have —_)_impartant Semilkenddichh ac are ey teon—ang ‘a 1 i +n a BUDE LF wie consider pure ¢ Silican Lattice There. mee _are: rfoure Meighbour-to each ailicon_atam, asi toned! theme arte two electron between Peereach of nleig bboun 4 i) Tp inteipic semicondyctenc —hcauies eg Sop ein between! filled valence band ond _Cenduction— band. PN Bixee [Link] Hatmslen. gop expressed Hi energy yiis much . AM olilenr cae thot min = |DShlatowr dan utpace) ofall bse Rsk iirc). fi! canductoy hay: ‘Eads fo + alsa has equal : cond ucbion band —Hb_errm al means ig Lhe vacant: gite. TEE amiable nthe a eee ai band_. Be But ab gamer. Lime. Miles. in Valence. ______—band_olso move but in divection ee Pens btie nb th eck of electron | 6a he edle +Ne off g- 7 Fine! energy ‘in_indainsic Semiconductor t ernie s ‘enact: ptt Gree. electaans ine ee Simsis amineee Ne. igemi conducting. itnad eccial Coforierm oOmnginake Titre mn mm 3 iy dhiekedid! Lath aidain Ln pusitie —te_a- wore. Aemicalldactre — ige Koo Woa_as Lalop tng —— a : pot bipum byeddin caved od pss iw atte mle rote oe pbc (eh = Ce ee seks cca ¢ eo |] aaaibien Lén purity, ofe! : a on cca emicandiuctors |e et Fs >a sr tee discreate covalent th ape eee — 7 ng means “Anat the fifth y_and its oct? bee ccd Conductioni =] effect GE tempreturre | sar iti aa atom willbe Considered. : The enenqy gevel of donor electra ea. res want. tom of Conduetn A “Yin energy evel _diagram ¢%n electron Callied” at donor 2 evel SG) men T> ak—r fie BE Swcsntes otaim sara! dished to — 3 conduct! omabandiand: beame./mayori by — ae Garmegiie 2 t ah) fbn ermal: ener Loa tntoddl pedees Cigalant ich of donor J ausricts Zodoei beeakingiot “Covalent Podesise po Corry rigiven. ont sed te arockioi of electann polese- pains - a fi fiend |SONS soot 5 TT routs Siiheleaien orve_ I ae ionized. an. arbhent iinerease Sai tepaade. enration of AdaNss Wale: pair due to, ‘ot Coral ent thond_ an —— Saas sbanave3 ohen Ydvolent im punity guys : epee Ay aL | stout Coy Stead barivale net im. | See ike ran B_ame doped a Be BP AS Wigton wided tnceo e bonds with t Ancree nei hbouming igi ater: and Ai e }——-aecept one eo forin--foudth silicon oka m, | ——_Cx@ate Vacant site. called hale on | Se sie fo | 2 ei na THe hole As considened to revolve. arround jer) _etethe &i otom_is free and is at the Energy Level closelte top ahvalence — eo tbondé Sor J ici Bele erap te Gy whem sts Kia One Valence bandis fined and 41 atom iS ready to accept electron. Hence acceptor level 1S close to tepot “ Nalence. band. when T> OK. dail ~ 1 Accep toc Levdibaket= eS fp Y ¢ J ——— pains are_gens Covolert band.a Beal at é es wie Perm ener yo aero c. pee Senieodc ae 4 a0 ne at Lal ud 2 ne up ga i 6f=(eyviea) — kt fnfssa | a ai cca ING oo. ar = 4 pa Leng 1 sO cif yt bio ae I 3 Bho ken Shere Oy. Panuath ea 9 mauds “et er = ete! Ble ibiiaw bed acciigail oy v ake é bsPAceptcin) _4 y ‘ondentrih ; “LE AOe Og Drrta gl Snewh _doiiinen iV cinewease yoGF increases — | Reason =? “Tmt owty acceptor abo 1m pint. Cxtes’ fomeed! and? further increase. So amt temp: Reads. te qenerabian of eT Inole: edits ‘due td breaking of ~~ Covment bond and moterial 42nds __te -bebave in intainsia manner E photsiliddesmete structure 4 working! -prifciple worth nect Bobellec — St nie 9) ibis aren: of 0 imueignt Sauces —_ Lolitas con vent ight. energy Pn%eo: electrical Noitage, ori -cumrent and have) pa juncto qiido tt isvereverse—biased condition 9) matenal dike si,Ge, In, @aAT, btn pophosphide. carve. sedi ti) 20 \ thhas Hooltermimus 5 Smoller ia ucokhede. land arg 64 act deanswd itGEN ereetlon | coke: Alig rea then photo current eG. (Lert Unt) A] Vatohen: Lé-and Ln _are. hiskance of __ depletiom aegioni- edge. Where e7 and Whole are genrate d. “ap dd towrdthro. depletion. region ene Hand dig qrarn sie) i oper preg joniets { le (oharein unctio ~ Covalent <'band Jaire! anizs J a aye ETOLeS oe aged Et rg Z € ied cae FS a 4 bales Mare toade- Teae= move: be cathode gepagiases wager pt n. ingenaitys ditreckly cone 3 bonis. tessDew en owe i FD este po yunietien aisle Shp eee see J ode thet me Bimirctt: Sportanegous: Tadiation. in ae al __ -Nisible ov aR cregion: & Et converts a electrical _enesqy to optical ener a order. Cord ated Bras c = principle $= i —t . > 2) onder forward biased the Majori by, “comries 4taom_n de region across: | “the junction and becomes minora by Searmensin_tne other ‘regions. +) “Theck means e7 from. N=region CTO8s “(Function and become minority Commits jn the off. regions and—wisa_ ypenSer +» pao cess Cailedl minority ghangecimiectians Lu . Did cane) evbasyicoulyevoltic o. fuetner iineresse. exuian ke cexcars miner by Cages € ai Phase OO} Grom yunetion and eco mbiN&22009) CAipay iat 23 17tn) ido i thap-edoi x DEL 7 Veeee as iqgnt- emission t ¥ i Xe Rite Eats “une: es ttibsieed cats Coes aera region 2 TMey Dave higher: efficiency imc ocoupding” [Link]'o Lica} Libere:s WN ee Or» Sutface (emi tren __ore emitting pe ini wide angle cand is hrghty in Cohetertand so use in signaling device and ad indicator. Siprele TE ID Ws Lt 7 nae Se Bonding maven — 7) & metaioation ght : guraing Roeyers =|) Active Reigon decks 7 |. aitslor metal con) [ométptiaatien ay) enpoutsd ol sPrtenbisins | 304 —4) substoake. te _@) Anode lgiads lepastic se @ Sei Cmigsive. Mace Roy enc lewner Chang 68 and ret tonelect vom 1 9 ban s bap 2 bas ‘permoass, oF emitting of alignt b imo \ 6 Ppriscesscifsalforiocas? $ : sid Ths spowierr upely of device containing ban [Link]: applies Reims acrossi ale. 2 Lee. 4 a an “electric. current fiow pee cathode. (fe anode? 2th ug i organic: Lexfers _ Cathode qives. ~ wy emmisive f£ ee a ea molecule and ee Yemove os -rdonducctt el is owenie. ge cael bad Fn sue) iui ovnc 4 iid Ade Bound) Hebtueen émissive aad —__ @pnditeblus. player yer: find Lelectron fe oles. aftenr pop inate tnerct gives ee anergy in For as eso , —4 ofieigrter o | Minti = aL bekn ae Rv = sk dagnt depend on i, Se aia on OS 6 ae53 Stpricn burn bodtnd mort wot ae uy foliar hadi ap ge Se era Sorte otFie eaermnnspemenZ Tay have only trans ay and wnen! e-iec off ib Vices ae Be os: Avansiperent as -theit Substrobe 7 Shuatenes Atte turned onlit allow 2ight pea ay Ln_cboth aiergctian Yi VE can. kei Lotisbo. var passive DD twsedafor head-tip cuisplay Be Giacke. cede 9 Have gubsteocke. made of very ee eas gae or olortte ee fous Pay D4 9 i) t+ con be. es -bo fabric ees Bee: eee sey Clothing ts £ fed eSPas ogiiive: Yoltes ‘ oe ns wun ROS gy quent fhan bz heco eu donot Mequire Ceres hee pom duced_and.mat? = barges aot plastic canbe — l made Inve thin termye neet. e_D fetime. - Red and gteen o1eD Sims ave tongen gifertime but blue Dave £horter. — D manifactusing- _paocess are expensiv PA itvot en ican easily clam oye. oLed..—— —— etal. _Bemiconductor= junsbion tal we — EiSaldect. practical Sericondueter — ——— LENE HOT SS a eae ge ee far 5 di wit uo sald a ke 4 A042 on tO Je iS a ¢ C-scho-bby s4nckian) “g ing Semicondu oe wnction aa Cohmic junction) bho: of metal tt Me Sebo ay junction are equal -2D Therfecu metal becom es . a ne Semi canductaa | ee chomed: =Ve chalraéd and becomes "ve aap a. recut otembial barrier is _f ormed Lot the metal semiconductor Junction COnmr de) =r ev. SRO BARRY YT i ev | RRS ¢ metal ay = a) SAR 5 € charged KERR. EC Cave charges ) OW Metel emiconducter ; Cafverc Contact ot ea)5 Auicer aide and metal remain e> NT characheristicg gob 6 4D t J (P-P sunetion i diodemihen Om AS oconductiving 2 begin te Coun fran smebabs te semi ‘On dict —pnii| fermi enenqie on hoth sido Lof \une-tlon acre equal } eho Ss _) These-fora me} ali becames AVE Chane Reltetelete alae Nel =i 8 tence hecome -~va' charges BO We bs “hy Sq cresurt: fess idatential barnes —_ eate eon al | Qemicanduct — ACNE Mt seiciaD oA —_¥ 4 apolied such frat — bo —ve ond Semicanductar to — ~~ ne. o> flaw frm an/ Semiconductor — Whourk: en un ting. p_applicatit2 BirmeaWat an? Bas Pee eae ae 4 ecoparti onal eo opeired we eS ahem Lew And “that's song coutled ohmic’ \ume-bion.s- J SO SAR _ teas =Coer+d RY Ce BOT ben GF, x x We atts ERR a semi conduc bor. PI Bee ae Msyarn geairsbiami 3 {unio by eligain oi ener, hs: vrolence tband to qy oa au Pemopobietacs are charat Ayre of mobile aries , 2 be qives na of St yo pais’ in device ste abso ~ ate photon cA : jum sti cond ate \0_ _dynomic. eqsa e Steam, eta 2 meee = energy then dalictiorsl eget tdaitin 7 genroted . Tel ens, ee shebon “ransthion i | atc } j | Rece m bination i Bee Ane from candu : a uctian | aes cam Se pee witha Wale in tralence and. this excess enenquis! trancherred. to photon a t. : doy wa Ge. c® Foi PO, __Genration = jadi é (25 Je Ahexpre cess obtain ES energy « fororh ora dicckion. dnd georbe, an! © bole | pai. Ne nape hole. pair is | ee tgg ened ion Suffictently ene | “photon wwhich: tronsfeas ita“ energ Tae vpalence band electsomeuinich: 19 exitited: +o: @[Link] «Lea pgs behind: £ean popes ace Aniem fran salence band ~ roy habe si valence bans siieigy- it bax 22 cone a Ss ee ee Bie eae a I et © 88 8 ev )__ Augen gensatian /- Retain binabian Cony 2 aaa Three particle -Lransititians DAs a arrect band to band. mechanisen —where three particie are_tnvalved Bu ea enemation an_ethole pair is = gen ed Consuming. -the energy of highly energetic particle. +} dbring recombination.an_¢e~ hole parr] __Yecombine the 2xess encagy 1s transfes | 8 te at hired _pascbictes ___- [eee Duthe foun process ge rie _Delrectron capture tL An e From canduct? -tYoand Moves... to valence. Joand neutralizing cooled n wolence: panducThe ex ciSss en esq 4, sea ethos fewerced: tecan 2 in conduction band tin hele capture se Atwer faom canduction > Band moves Lo uwalence Band and - ie uprto, valence. hole + “me exces ig bran sfered sto uanathe “Clectan emisst: 4 ro rn CB beax Souve igeondads Eire Pomaay ses i a a s.genwrotion_¢ : c * Me ond on emission gniy ener a eB rans Fes tS nerdy We wR. Tne valene 7 fo ca. genrating =Oe iaidcin. cena i Mo1S then toc gennmabing ano Co : oe = aly pe oe Hey, : ; at Gs nad lle 6. a Sa e ~ + Cy “ Ee oT # a ah - s ° : ev =tE___carnier transport ~ : Current fom in a semiconductor can be either due to - GD. DaPe curice oO Applied! electric. fietd ) — Diwnen 2 is applied acamss a bat_of semiconductor, 67 and hole acquire a ND Caw LE velocity) which |is prepo stional eto len. or Genes (Duhon en uimorredsisr yp: sAirectio no posi Pe) io. ton of ceplied Lield_. poles _maves. ee ind rerbono Prerdi.. Tig directional 2s movement of Cha nue a curren® _wpieh,, ay dai Et corre otPe ee a aR ee. Di-FRision current . ; —— hee Cause oF charge conriex ae Semiconductor there exist a Sancen traction gradi ent. Thus it | means carrie to di-Pftise Fram egion of nighes: conc. to regi _ o Source. “conc. therelay co O_Current: How catied “pi ffus cunrre tt: be | : ‘ por Econsn ast Rate of & flow = di (sn) r H 3x é Li, distance 10 rae Semiconductr Bx obs of 2 Plow across onit_area = ucrentz density ——— earn en icra A current density due- Aimitor\ a, hale aaa ty equed conc. grad Fe cco dens _ @ cwrreses ey where © —9n