3-1 Thyristors

Thyristors

Absolute Maximum Ratings

V RSM V RRM IT (AV) I T (RMS) ITSM P GM P G (AV) V RGM IFGM Tj T stg I RRM
Part Number V DSM V DRM Conditions (50Hz) 50Hz Single I DRM Conditions
Tc Half Sine Tj
(V) (V) (A) (°C) (A) Wave, Default (W) (W) (V) (A) (°C) (°C) (mA) (°C)
T j =125°C (A) max
TF541S-A 500 400 5.0 88 7.8 80 5.0 0.5 5.0 2.0 –40 to +125 2.0 125

SLA0201 650 600 5× 4 7.8 80 5.0 0.5 5.0 2.0 –40 to +125 2.0 125

TF561S-A 700 600 5.0 88 7.8 80 5.0 0.5 5.0 2.0 –40 to +125 2.0 125
TFA37S – 700 3.0 127 4.7 60 5.0 0.5 5.0 2.0 –40 to +150 2.0 150
TFA57S – 700 5.0 115 7.8 80 5.0 0.5 5.0 2.0 –40 to +150 2.0 150

ns
TFA87S – 700 8.0 98 12.6 120 5.0 0.5 5.0 2.0 –40 to +150 2.0 150
TFA107S – 700 10 86 15.7 160 5.0 0.5 5.0 2.0 –40 to +150 2.0 150

ig
TFA38S – 800 3.0 50 4.7 60 5.0 0.5 5.0 2.0 –40 to +150 2.0 150
TFA58S – 800 5.0 50 7.8 80 5.0 0.5 5.0 2.0 –40 to +150 2.0 150

es
TFA88S – 800 8.0 50 12.6 120 5.0 0.5 5.0 2.0 –40 to +150 2.0 150
TFA108S – 800 10 50 15.7 160 5.0 0.5 5.0 2.0 –40 to +150 2.0 150

D
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rN
fo
d
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3-Pin Reverse Conducting Thyristors for HID Lamp Ignition

m
m

Absolute Maximum Ratings

VDRM I TRM*1 di/dt*1 P GM PG (AV) V RGM I FGM*2 I FRM Tj Tstg I DRM VTM
o

Part Number Conditions Conditions

ec

Tj Tc I TM
(V) (A) (A/µs) (W) (W) (V) (A) (A) (°C) (°C) (mA) (°C) (V) (°C) (A)
max max
R

TFC563D 600 500 1500 5.0 0.5 5.0 2.0 450 –40 to +125 1.0 125 1.4 25 10
ot

*1: TC≤100°C, VD≤430V, Wp≤1.0µs, IG≥70mA, dig/dt≥0.5A/µs, 100kcycles

*2: TC≤100°C, VD≤430V, Wp≤1.0µs, 100kcycles
N

176 Thyristors
 3-1 Thyristors

Electrical Characteristics
V TM V GT IGT VGD dv/d t IH Rth Mass
Conditions Conditions Conditions Conditions Package
Tc I TM Tc Tj VD Tj VD
(V) (°C) (A) (V) (mA) (°C) (V) (°C) (V) (V/µ s) (°C) (V) (mA) (°C/W) g
max typ max typ max min typ typ max
1.4 25 10 1.5 0.03 0.2 25 0.1 125 1/2V DRM 20 125 1/2V DRM 4.0 4.0 TO220F 2.0
SIP12 with Fin
1.4 25 10 0.7 1.5 5.0 10 25 0.1 125 1/2V DRM 50 125 1/2V DRM 4.0 6.0
(SLA12Pin)
1.4 25 10 1.5 0.03 0.2 25 0.1 125 1/2V DRM 20 125 1/2V DRM 4.0 4.0 TO220F 2.0
1.5 25 10 − 1.0 7.0 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 15 4.1 TO220F 2.0
1.5 25 15 − 1.0 7.0 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 15 3.8 TO220F 2.0

ns
1.4 25 20 − 1.0 7.0 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 20 3.5 TO220F 2.0
1.35 25 20 − 1.0 7.0 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 20 3.4 TO220F 2.0

ig
1.5 25 10 − 1.0 − 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 15 4.1 TO220F 2.0
1.5 25 15 − 1.0 − 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 15 3.8 TO220F 2.0

es
1.5 25 20 − 1.0 − 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 20 3.5 TO220F 2.0
1.35 25 20 − 1.0 − 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 20 3.4 TO220F 2.0

D
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m
m

Electrical Characteristics
V GT I GT VGD IH Rth VF Mass
o

Conditions Conditions Conditions Package

ec

Tc Tj VD IF
(V) (mA) (°C) (V) (°C) (V) (mA) (°C/W) (V) (A) (g)
min typ max max
R

typ max typ max

1.5 30 25 0.1 125 480 12 4.0 1.4 10 TO-220S 1.5
ot
N

Thyristors 177
Package Type (Dimensions)

• TO-220 • TO-220F-A • TO-220F

2.8±0.2

9.9±0.3 4.5±0.2
(1.3)

4.2±0.2
(1.7)

(8.7) 1.3±0.2 10.16±0.3 2.54±0.2 10.0±0.2

4.0 ±0.2
C
2.8±0.2 0.5

6.68±0.2
φ 3.2±0.2

8.4 ±0.2
15.87±0.3
18.95MAX

φ 3.6±0.2

15.8±0.2
15.9±0.3
9.2±0.3

16.9 ±0.3
φ 3.3±0.2

0.8 ±0.2
a
2.4±0.2 2.76±0.2 b
(3)

±0.15
0.5 −0.1 0.5 ±0.1

3.9
±0.2
13.1±0.5

±0.1
0.8

9.75±0.5

13.0min
1.35±0.15
1.35±0.15
±0.2
2.54±0.2
2.54 0.85+0.2
−0.1

ns
0.45+0.2
−0.1 2.4±0.2
10 ±0.2 2.54 2.54
4.7±0.2 ±0.2
2.2

ig
(1) (2) (3)
(1) (2) (3) a: Part Number
b: Lot No.

es
(1)(2)(3)

Pin No.
(1) Cathode (T1)

D
(2) Anode (T2)
(3) Gate (G)
( ): Triacs

ew
• TO-3P • TO-3PF
rN • TO-220S Straight
15.6 ±0.3
5.5±0.2
5.5±0.2

4.44±0.2
13.6 ±0.2 4.8 ±0.2 3.2±0.2

(1.4)
3.45±0.2
5.0 ±0.7

(5) 1.3±0.2
9.6 ±0.2
2.0

2.0 ±0.1
1.8

9.5±0.2

fo
23±0.3

(0.45)
19.9±0.3

+0.3
4.0

-0.5
φ 3.2 ±0.1

9.1±0.3
a
a 3.35±0.2

10.5
1.6
3.3

b b (Measured 2.6±0.2
at the root) (Measured
de

2 +0.2 at the root)

20.0min

−0.1
(16.2)
3.5

+0.2
3 +0.2 1.75 –0.1

(2.69) (1.8)
−0.1
+0.2 +0.2
1.05+0.2 0.65+0.2 2.15 –0.1 1.34 -0.1
−0.1 −0.1
+0.2
en

+0.2 +0.2
0.86 -0.1
1.7 +0.2 1.05 –0.1 0.65 –0.1 11±0.5
5.45 ±0.1 5.45 ±0.1 −0.1
5.45±0.1 5.45±0.1
(Measured (Measured
a: Part Number at the root)
m

at the root) 0.76±0.1

b: Lot No. 15.6±0.2
(1) (2) (3) a: Part Number
1.5 4.4 1.5
b: Lot No. 0.4±0.1
2.54±0.1 2.54±0.1
m

(Measured (Measured
at the root) at the root)
(1) (2) (3)
10.2±0.3
o

(1) Terminal 1 (T1)

(2) Terminal 2 (T2)
ec

(3) Gate (G)

1 2 3
R

• STA8Pin • SLA12Pin
ot

31.0±0.2 Ellipse 3.2±0.15×3.8

20.2 ±0.2 40±0.2±0.2 φ 3.2±0.15 24.4±0.2 4.8±0.2
16.4±0.2 1.7±0.1
N

b
9.0 ±0.2

11.3 ±0.2

9.5min (10.4) 16.0±0.2

13.0±0.2
2.3 ±0.2

a
0.8max
8.5max
9.9±0.2

a
b
4.7 ±0.2

Thy1 Thy2 Thy3 Thy4

2.7

Pin 1 12
+0.2
0.5±0.15 0.85 −0.1 +0.2
1.0±0.25 2.54 1.2±0.15 1.45±0.15 0.55 −0.1 2.2 ±0.7
a: Part Number 1 2 3 4 1 5 6 7 8 9 10 11
17.78 ±0.25
b: Lot No. 11×P2.54±0.7=27.94±0.1
C1.5±0.5 31.5max
a: Part Number
1 2 3 4 5 6 7 8 b: Lot No.
T1 G T2 G T2 G T2 T1
0.5 ±0.15

1 2 3 4 5 6 7 8 9 10 11 12
1.2 ±0.2

G K A G K A G K A G K A
3 5 7
TR1 TR2 TR3
2 4 6

1 8

(Unit: mm)

180 Thyristors