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VLSI Assignment-2
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VLSI Assignment-2
Vlsi assignment
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VLST Destan : a ee | Assiqnmert -2 HName f- Ch. ddrthya Sectim: ECE -2 | Rol) Noo + (60 -Q1-735-093 4. |Desemibe constvucttonal teatures and performance | chavactem tics ef pseudo —omoe loqie and. Constyuctone Featuves s @ Transistoy Aman emenh 3 - Tt consicte of muttiple NMOL draneretovs connected semes, Fach thansictey acts as 4 past qt for inpud Su (i) Tnpuk Stage t- ate typically has um ov move input terminals , each connected +2 +the teaminal of NMOS tranuctov, Louver teammnals of these trancictovs ave comm ly connected + qrrund (Wes). &) Outpt Stage? Daam teaminal of NMOS trancistow ave connected hon +o ove getets output node. The node serves ad oudput: . @) Lead Recistov i Tt w connected betwen output node and poerdve power supply (ton) Pevdormance Chavactemectied 5 @ Speed t- t+ often crelecavelly fast sertching speeds () Pooey Concumption + Consumes stahe powew due to presence of load vestctoy, Powe dtesipahoy can be vedlucad uo dynamic, op Gu) Nowe Manging 2 - Nowe manginm ave tmrted by the and asymmety between er aQs) fan-out & wa te Worked compared “to othey loge darmbcs, toad menstoy and troneitoy sixes determine the ates drwving capabr tity , adtectrg chy ability devwve mull plc loach corthoud degrradectarn m pew-forrmance (&) Voltage Levels ¢ reg operates woth wltege wel com pab ble roth nimot | technotegy 2) | Devive pall up +o pul dowry gee ‘love On | NUTS inverter dower by another NMOL inverter. Considev the depletm ep dranattoy tov which Vl =0 “iat unter all condrbens, an Burctha assume thet +p caccade wnverteh © Clearly expla aboud ION IMPLANTATION step uv Ic dalomcathon . Janbaon te a low-dte Ye paces by whicly (008 of one clement ove accelevated wnt a eotid tong , thereby changing the phyptol chemusJ, ov decdricad porpertres of the tong Anelzng Ton— imp Ton source cooatt of & dapart mediemtad torthin ven Gavia) eletre held4 | Ths electric tel uv ctong envugr to seponly the dard metrcedrs ireto cenctrtuerd tone forming a chenged ques These clarad tors ove than acecloyated +0 desirved voleorty by cartel] of voltage along the accclenctoy tube. TH vc rowed into a mao bec? baglv ae tone ee ton curyerd 4 ot tha ove of tm4 Magnetic field « so sf He only desired dopant turns though ong an - ‘J ig Focused beam of dopant tot uv thon pasted horde X and Y plates Mechaniem uw almost cethyedle cel cccilloscope wluch move scvecn. Perpendiculow dustance doom semteenductey curface coveted by anepurrtty ator befove coming to oest J called Poopcted/ Reng (Fr) Define Chemical Vapour Depacrtin Chemel vapouy deposrtion (CVD) ww & proce herby a eolid materi 4 deposrtad dom a vapour by a chemical ceacbon pccuaying 00 oy th velar of & norm heeded cube tel curvfacy. Solid material w obtained as a coabrg Bea. porodler , ov a single onpstals Tha Aypread CUD proce , ov move votahle precurysow) wludy react od dese om substrale suvface +0 porduce athe desived daposs : punng ‘lus proces, lable by-producl ave alo produced , volude ave cvemoved by qo low thooeg J peacbn chambe : plasma iderhca) +o scanning plates Uae cael beam ever the aCUD filme ove generale quite conformal | Cup filme ave hevdel than similar medemals produced a ewnvertbena) fabricat parced CD Bb used ww micao clectaon cs industry 4p make Frlrny seuing as dielectrics, conduct , pareiveton byes, oxidathon bates, and epitantal hag 5y | Paeto the omveuit dtagyar of Br—cMos logic. shown } Qo imped NAND Gate Yppoe i a tN in esl Explain dhe Cx-Powcess Czochvolekt Ovysted Gmwth pwc 4a ry bliad of omyptal qrowth wed py obtaw single oryted silicon ingot a Gmuth » the prices whee ~ Pre-exe ap more molecoles ov (ont ww bate cyte] beame dhery pocitons 1% orp Electoonic grado etlicern Gas) ¥ plaad quarts couerble fav hecbrg Due +e heeding , the elicon gh motten Furnace uv headed above exec oes ok > OO iecd onped i dipped iw molten £1 and slowly tortld vaton. by onyeeed pull-g mechanism Seed Onplal 2 furnaa are onteded in cppocite drreca ms Noten Explatw he Nimoag £ 0M0S — fabertachay porcedve @ nNOS Eabotoadow @) Proceestng ¥ possed om a singly dal 84. of bale perty om whic neces P impurrty Bw intheted a she owslal 4 dweleped- oe of he Si- substrate one aboud 75-160 IG) S10, lager nov: A ur baad ‘Tt allabove the L is exter voafer 40 pe Sr substredle the ourfacr, performs 4 ~ banter to dopard thao Ay 4 procensing and odfey p chi subotrahe - (1) Surdace wy now enclosed wetl he photo oppose wlicly 1s depos peal wad and spur hea oven) dustrilochon of necexevry Hacked: (i) Photoresut coahra uy the tanwovered 4p OV ight thaougy mas which desonbes these avers teto colvely tranemicsion J +o ake place a4 oe wrth.) transect chanel phetoveset (¥) These reqtors re ones erty \ ead eye mweadily “fined aay + hev wth ~ ofits age the 4 nal ag punts the a curdact of tortey 4 uneweld 1 window dehned >y maskWy 4 Ahan layew ef Sid, Gtatey Grow over the chip suvdace adtew femoving the semaine of phortrreniet. a) qt stucure u oveated by depoeitong polysilicon on the stp of 4. n) Further, phetovesiet coadhyy and masking yy 5 alluos the polysilicon +to’ be petleinad, (EB Oe Altey the, thin oxde o Yemoved to ose ae areas , These avers ave detused worthy n-type cae a heading Se to pil Peo by) phasing ot destreol 9 “ype \ impure & a he sourea and deyain + thican has an und "y, than oxide, ido acs as a male dung ditham Ts & abled self-aligning fwaqaw a thick onde of 8 aban ove and then meskad worth photresist . nlao tt ub etched +o seleckel oven ot the papiticen pe, dvamand souvee. whee connechr ave_to be made - &) Now the whde chip hou dapos ts of tho mob! GL) arte t 4p thicknen of Sum. oa ek. We and thew elchad tp form +h rraquered inbercen necbar pattern, fan avea lope shoo 10) Y= &+etc)| below i } 2 | Peay AL at, HE rw and Ler} 2 < " S + ® a c & ebficrend layout diagvarn V [LITTTTIVRIC LITITZ 76, fi i ly oresre vy PIZIZZTZARUET LEZEN f ° ra ctor exits, mig Yj y y i Ai Ay \PZZ7T TA LZZ AZ N» Explain various stepe involved! uv Photo Arthuaryap , Phot bthography 4 the paves of trandeni geonehrne ori shaper 7a mask tb the surface A athens water. Tt u a priced ted in micoo-taboresdhoy -to pew prob om a ten dilw w the bulb of cubetse « | Steps wv Photatthapiagy : | @) Weev Cleanin | uledew w cleaned ty eliminate pollutants by “peng toto | aye and mnie worth detonred western followed by dhyirg sort ortwogpa- vy () Pore— bake. and &Pormew, Coxb Porming th dove 0 tmprove pheteveruet adhesion Enleel Vy, tel (veu}} | | Tr hneay ve9l, So, toad = Knylecd (2|VritmaVot]- | | (nto) tl] | | toovk as dvr nlten one v ON, otha 4 oF U connected +d gt fetmmnal of beth transite cude 4ttad both ah be dver aveetly wth unged wo Hage VwSubctath of nos 4 connecked +0 ground and fubcal *. of pMos 4 connected +p powoev cupply ‘bo Men =i and Veen = Vee Vgs,p = Nin Mop end Voc, p = Venct ~ Vo Vw Nout NOS pMos- |
(loo t\ro,9) Vor linea’ ete Wy |Ketixze KOR and NOR orverats oo stranumpectny fie @ X0& B Z: 4 Sg, eee g 4 2 4 8B z 4 ° ° o a 0 I ' a ( 0 ! A ' ! o +lf 5 —e 8 z B 4 aaa & a iE ee 5 ee ee a 6 yo + & © 4 Ea missin, gate wrth Pas Transiehv ae Trans Transmission, Gate | Pass Transit: | toy pmos and pms Ww Ser pmos oY ompe panel fe. agnmcraal tanctes i? Be ee lane donates chovachemstics curtatle doy both diqdel | o dutebe dv ducal ord analog ro oa v Mave avaand complerity her over due +o cing due +o duc$ -ranusty tyanartov qenevalty stowey due +o Poterch ably daster due tv vaghev capacitance lone capacetance. : Hie stehic pow how stohe pote ; commu prionkt la i alameda tio cae 135| Draw Uf) crrcutaeh enews mane cnovespoeleng tile | dtagvam dy nMOS and canos inverters | (yy manos rnvevters _.Nad | Vout RLS |(i) cmos tavettew Nad | | | & tos | ais \3y |Desiqn & D-FF uaing Transmit) gots lapte “Tranemicsion — qattes cooled by complemorborry clock eHechvely tmudte and latch the dake while tovected marntan the this enruves Het tho dlip-dap capheves and hell He D put ot the coved clock ediees providing aebebe dagrtal stovaq syclk) ce] oe | Dacre the symbelio kyrt doy the cMos mverfet ond | corte, the geval emes loge gee dagruk gquedelinas? Nad A hd ctor and pmoe franaurtea in n-woell Q) Place omoe ranch and p-wotl cespechvely dvansicte =) ane td cane () Aba ondary iia (u) Ose metal lagen lov udeveennedting didteverd por? — of crt bah cout @) mimeuxe the number 4p ceduct pannerte, capacrtance ard po&) Avoid lon, poll eiCicow wrves since they bos L 0 10 es A tie et d dtr melas. 7 "4 | yestclanee™ compo e 1) Eneuve there Yave dedieced and sobutt power and qrund line @) Place inputs and output pes th accesseble locechons da | ey qveding and connecim to othev part of the etveuit w sto extemal pad iss |\KIhat vw the need fev destabilety 2 larw des doy testabr lity eT ce | Design tov Testability | sof the dovelopment P undew ecthey & mresouyee — scheme Testabitity v | mre lve ba ty due Din A vesoUree lmted ga porcediuve Hat ob wed +o cen fov maximum effectreneD umited w aelabi by even heard erthor +0 aediuce coct in ~ and dip +» tnovense aeltabi lily involves uncerpowsh addrhoral crveua sean chains, built—ty self can cefly mto ohip Loreen peT tm VLSI des and design tesctevey such |tat evyuats, and bomen ay daculrtets teshry Destqn doy testability w WLS dos YB exerdal +o entuy) het fabmested chsps ne drew from ane kind of manutacun' ; st obo ay overall test time and thereby cost of sere and de buggirg By tnecrpovedang DFT techniques into chep dosgn, tt become) easier to test tha strucluvel asvectnen of Lip , leading +o bégha quality pratucty and dawler ctme-to— | ha 1a10). |Almte a she ce “ “st shat ps tayen and sy bolic diagram anstahon tp MAS dorm mes Layew Nos desgn 4 ama at turaing a spechashon into masks dav poveessing culo “to “meet the cpeerheccton (9) Substrate : Bare wu whack Mos device 4 balk. Ft 4 Aypreably medle up of cilice sewing o4 frundabon +o cubsequenE yeu y) Bode layers Placed mm tp od gubshate i chach as incdetev, sepav
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