SNA-386
Product Description
DC-3 GHz, Cascadable
Sirenza Microdevices SNA-386 is a GaAs monolithic
broadband amplifier (MMIC) housed in a low-cost surface- GaAs MMIC Amplifier
mountable plastic package. At 1950 MHz. this amplifier
provides 20dB of gain when biased at 35mA.
The use of an external resistor allows for bias flexibility and
stability. These unconditionally stable amplifiers are designed
for use as general purpose 50 ohm gain blocks.
Also available in chip form (SNA-300), its small size (0.3mm
Product Features
x 0.3mm) and gold metallization make it an ideal choice for Patented GaAs HBT Technology
use in hybrid circuits. Cascadable 50 Ohm Gain Block
21dB Gain, +23dBm TOIP
Output Power vs. Frequency Operates From Single Supply
Low Cost Surface Mount Plastic Package
16
14
dBm 12
Applications
10
PA Driver Amplifier
8
Cellular, PCS, GSM, UMTS
0.1 0.5 1 1.5 2 2.5 3 3.5 4 IF Amplifier
GHz
Wireless Data, Satellite
Sy mbol Parameter Units Frequency Min. Ty p. Max.
dB 850 M Hz 19.0 21.0
GP Small Signal Pow er Gain dB 1950 M Hz 20.0
dB 2400 M Hz 19.5
GF Gain Flatness dB 0.1-3 GHz +/- 1.5
BW3dB 3dB Bandw idth GHz 3.0
P1dB Output Pow er at 1dB Compression dBm 1950 M Hz 10.0
OIP3 Output Third Order Intercept Point dBm 1950 M Hz 23.0
NF Noise Figure dB 1950 M Hz 4.0
VSWR Input / Output - 0.1-3 GHz 1.5:1
ISOL Reverse Isolation dB 0.1-3 GHz 22.0
VD Device Operating Voltage V 3.2 3.7 4.1
ID Device Operating Current mA 30 35 40
dG/dT Device Gain Temperature Coefficient dB/°C -0.003
RTH, j-l Thermal Resistance (junction to lead) °C/W 330
VS = 8 V ID = 35 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Test Conditions:
RBIAS = 120 Ohms TL = 25ºC ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC [Link]
1 EDS-102434 Rev A
Preliminary
SNA-386 DC-3 GHz Cascadable MMIC Amplifier
Typical Performance at 25° C (Vds = 3.7V, Ids = 35mA)
|S11| vs. Frequency |S21| vs. Frequency
0 23
-10 21
dB -20 dB 19
-30 17
-40 15
0.1 0.5 1 1.5 2 2.5 3 0.1 0.5 1 1.5 2 2.5 3
GHz GHz
|S12| vs. Frequency |S22| vs. Frequency
0 0
-5
-10
-10
dB -15 dB -20
-20
-30
-25
-30 -40
0.1 0.5 1 1.5 2 2.5 3 0.1 0.5 1 1.5 2 2.5 3
GHz GHz
Noise Figure vs. Frequency TOIP vs. Frequency
5 30
4.5 28
26
dB 4 dBm
24
3.5
22
3 20
0.1 0.5 1.0 1.5 2 2.5 3 0.1 0.5 1 1.5 2 2.5 3
GHz
GHz
Absolute Maximum Ratings
Parameter Absolute Limit
Max. Device Current (ID) 70 mA
Max. Device Voltage (VD) 6V
Max. RF Input Pow er +10 dBm
Max. Junction Temp. (TJ) +150°C
Operating Temp. Range (TL) -40°C to +85°C
Max. Storage Temp. +150°C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the follow ing expression:
IDVD < (TJ - TL) / RTH, j-l
522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC [Link]
2 EDS-102434 Rev A
Preliminary
SNA-386 DC-3 GHz Cascadable MMIC Amplifier
Application Circuit Element Values
Typical Application Circuit Frequency (Mhz)
Reference
R BIAS Designator 500 850 1950 2400 3500
CB 220 pF 100 pF 68 pF 56 pF 39 pF
CD 100 pF 68 pF 22 pF 22 pF 15 pF
1 uF 1000 CD
pF LC 68 nH 33 nH 22 nH 18 nH 15 nH
LC
Recommended Bias Resistor Values for ID=35mA
4 RBIAS=( VS-VD ) / ID
1 3
RF in SNA-386 RF out Supply Voltage(VS) 5V 6V 8V 10 V
CB 2 CB
RBIAS 36 68 120 180
Note: RBIAS provides DC bias stability over temperature.
VS
1 uF
RBIAS
1000 pF Mounting Instructions
CD
LC 1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
S3
CB CB
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
Pin # Function Description
1 RF IN RF input pin. This pin requires the use
Part Identification Marking of an external DC blocking capacitor
The part will be marked with an S3 designator on the chosen for the frequency of operation.
top surface of the package.
2, 4 GND Connection to ground. For optimum RF
3 performance, use via holes as close to
ground leads as possible to reduce lead
inductance.
4 S3 2 3 RF OUT/ RF output and bias pin. DC voltage is
BIAS present on this pin, therefore a DC
blocking capacitor is necessary for
1 proper operation.
Part Number Ordering Information
Part Number Reel Size Devices/Reel
Caution: ESD sensitive
Appropriate precautions in handling, packaging SNA-386-TR1 7" 1000
and testing devices must be observed.
SNA-386-TR2 13" 3000
SNA-386-TR3 13" 5000
522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC [Link]
3 EDS-102434 Rev A
Preliminary
SNA-386 DC-3 GHz Cascadable MMIC Amplifier
PCB Pad Layout
Dimensions in inches [millimeters]
Nominal Package Dimensions
Dimensions in inches [millimeters]
Refer to drawing posted at [Link] for tolerances.
522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC [Link]
4 EDS-102434 Rev A