Power Module Reliability

CONTENTS

1. Foreword ................................................................................................................................................... 2
2. A brief outline of semiconductor device reliability ................................................................................ 2
2.1. Change in failure rates of semiconductor devices........................................................................................... 2
2.2. Failure factors of semiconductor power modules ............................................................................................ 4
2.3. Heat-fatigue phenomenon in semiconductor modules for electric power ....................................................... 5
2.3.1. Heat stress model during module actuation ................................................................................... 5
2.3.2. Fault mechanism with power cycle and thermal cycle ................................................................... 6
[Link]. Power-cycle life fault mechanism ............................................................................................ 6
[Link]. Thermal-cycle fault mechanism .............................................................................................. 7
3. Quality-guaranteeing activities................................................................................................................ 9
3.1. Mass production procedures ........................................................................................................................... 9
3.2. Environmental control ...................................................................................................................................... 9
3.3. Periodic inspection of manufacturing equipment, instrumentation and maintenance control ......................... 9
3.4. Material purchasing control .............................................................................................................................. 9
3.5. Manufacturing process control......................................................................................................................... 9
3.6. Intermediate and final inspections ................................................................................................................. 10
3.7. Quality information ........................................................................................................................................ 10
4. Reliability Tests ...................................................................................................................................... 12
4.1 Reliability Test Method ....................................................................................................................................... 12

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1. Foreword
Power modules, semiconductor devices for electrical use, were launched on the market in the late 1970s as BIP
type modules (transistors, thyristors, etc.) embedded in bipolar-type semiconductor chips and again in the early
1980s as MOS-type modules (IGBT etc.) embedded in MOS-type semiconductor chips. Currently they are widely
used in many home electric appliances such as air-conditioners, refrigerators, washing machines, etc., and in
applications for various industrial inverter devices, servo, UPS, electric and electronic peripherals.
At the same time, the reliability of the device has increased rapidly along with improvements in semiconductor
technology. Typically, for equipment that demands high reliability, a semiconductor device failure rate of 10 to 100
FIT (1 FIT = 1×10-9/hour) is required. In order to realize that level of reliability, naturally the reliability of the
semiconductor must be improved. It is very important to consider the harmony of the equipment design and working
conditions under the various new stresses added to the semiconductor’s characteristics and reliability.
It is often observed that the failure rate in the market place is markedly different for semiconductor devices
manufactured in the same way because of a weakness in machine design or a difference in usage.
Here we introduce our company’s reliability test results and activities to guarantee quality with regard to semiconductor
device reliability, by examining problems of typical machine design and usage that must be take into consideration
and cases of faults that actually reached the market.

2. A brief outline of semiconductor device reliability

2.1. Change in failure rates of semiconductor devices
The failure rate of electrical equipment and parts follows the so-called bathtub curve shape shown in Fig.1.(a),
where after an early failure period, it passes through an incidental failure period before reaching wear-out failure.
From this failure-rate curve, the selection of a semiconductor device for use in equipment has to consider these
three points: early failure period failure rate, incidental failure period failure rate, and usable life period, in addition to
the equipment use, influence and spread of faults in the device, and the preventive maintenance system, etc.
In general, the failure-rate curve of semiconductor devices resembles Fig. 1. (b) and tends to decrease over time.
Changing the way of looking at this, even when the failure rate lowers in the incidental occurrence fault period and
becomes stable, from the fault distribution pattern it can be said that the early failure shape continues. The change
of the failure rate over time of the semiconductor device is shown in Fig. 2, and while a high failure rate is shown
after manufacture, by edging and debugging the failure rate decreases further. For semiconductor devices that
require high reliability, high-temperature edging and electrical edging are used for edging and debugging.
Because the failure rate curve of semiconductor devices shows a declining variation pattern, to increase the
reliability of the equipment it is necessary to consider the minor initial-failure factors (especially major failure rates
such as disconnects, shorts, etc.). Next, while it goes into assembly conditioning and edging with equipment maker,
the major failure rate is ≤ 0.1%. If the rate dramatically exceeds this value, there is a problem in the device, circuit
design, assembly process or test process and a study of the cause is necessary. If this is left, it can show up in
frequent fault occurrences in the market. Caution is necessary when the failure rate is high, as there are many
cases when there is a correlation between the assembly-conditioning and edging- period failure rates and market
failure rate. The failure rate for heavy faults within a certain period is ≤ 0.1%. When the equipment comes on the

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Power Module Reliability

market, the failure rate decreases dramatically because the stress level declines, and it is usually between several
FIT and several 100 FIT. Because of this, design with some leeway on the device-use side is required, and
generally it is desirable to have a maximum voltage rating of below 50~60%, and a maximum junction temperature
rating of below 70~80%. One other important element that must be remembered is the semiconductor device in use,
the circuitry used and the environmental conditions (various cases of stress, etc.), which can affect improvements in
reliability too.
As stated above, when it comes to equipment reliability design, it is necessary to consider the trade-off between
performance/ reliability and economy when selecting a device. It is not easy to attain both high performance/high
reliability and economy, so a balance of both must be selected. It can be said that selecting a semiconductor device
by considering the performance, reliability and harmony of the equipment is an important learning activity for the
user.

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2.2. Failure factors of semiconductor power modules

When a device is returned from the market or the equipment-assembly conditioning evaluation as faulty and a fault
analysis is performed on a good product, there may be a problem with the device in use or the environmental
conditions, or there may be a defect in the device. Using the IGBT module as an example, the fault factors are listed
below:
・Good product Device characteristics and “unmatching” of machine-side circuitry
and manufacturing conditions
・Use and Overvoltage
environmental VCE overvoltage (between collector and emitter)
conditions Turn-off surge voltage
Increase in bus voltage
Control signal anomaly
External noise (lightning surge)
Measurement defect
VGE overvoltage (between gate and emitter)
Static electricity
Gate drive circuit anomaly
Gate oscillation
High voltage mark
External surge
Overheating (excess current, overload)
Heat dissipation design defect
Short (lack of dead time, improper control signal, etc.)
Excess current
Lack of gate voltage
Gate wire open
Abnormal increment in switching frequency
Decline in switching speed
Lack of heat dissipation
Junction heat fatigue
Insulation defect (ceramic crack, internal solder re-melt)
Cooling fan anomaly (abnormal stress)
Excess voltage

・Semiconductor IGBT chip manufacturing defect

device defects Pattern defect (by foreign matter, etc.)
Surface preparation defect (dopant ion)
Module manufacturing defects
Wirebond junction defect
Insulation/base board junction defect (solder, etc.)
Internal electrode solder defect

Among the factors above, one of the factors deciding the usable life period is heat fatigue failure inside the module
between the chip and wire junction or between the insulation substrate and the base plate (solder junction). The
next section introduces a description of heat-fatigue phenomenon and cases of failure.

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2.3. Heat-fatigue phenomenon in semiconductor modules for electric power

2.3.1. Heat stress model during module actuation

Two actuation patterns of the heat stress model during module actuation are shown in sections in Fig. 3 When
selecting a module, consideration must be given to its usable life and the machine design.

■ Actuation mode 1
・Actuation pattern shows few changes in case temperature (base plate temperature) but frequent
changes in junction temperature (known as PC life or power cycle life)

■ Actuation mode 2
・Actuation pattern shows relatively calm temperature changes at system actuation and shut down
(known as thermal cycle life)

Tj
Temperature

TC

System operating time time

(long time per order)

Tj
Temperature

TC ΔTj-C ΔTj

ΔTC

ON OFF

Short time period

Fig.3. Actuation pattern and module temperature changes

Tj ：Junction Temperature
TC：Case Temperature

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2.3.2. Fault mechanism with power cycle and thermal cycle

[Link]. Power-cycle life fault mechanism

Fig.4 shows the structure of a typical power module as module actuation causes a change in the junction
temperature and stress appears by the difference in linear expansion coefficients of the aluminum wire and the
silicon chip, causing a crack to appear on the junction side. The crack develops and eventually separates
completely.
With the comparatively gentle changes in module-case temperature by inverter actuation, etc., when conditions
cause frequent junction temperature changes, power cycle disruption must be taken into consideration during
machine design. Fig.5 shows a photograph of a case of junction shear due to power cycle.
Fig.6 shows the results of our company’s test carried out on a module product’s power-cycle life (power cycle life
curve).

Chip Wire

Solder layer

Insulating substrate (both sides copper foil)

Solder layer

Base plate

Fig. 4. Sectional view of module structure

Aluminum wire
Silicon chip
Insulating substrate
substrate Aluminum wire
Crack

Silicon chip

Copper base plate

Fig.5. Junction fatigue state after power-cycle test

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 Power Module Reliability

1,000,000,000

100,000,000

10,000,000
cycle

1,000,000

100,000

10,000

1,000
1 10 100 1000
ΔTj [℃]
Fig.6. Mitsubishi IGBT module NF series power cycle life curve

[Link]. Thermal-cycle fault mechanism

At system actuation and shutdown, the power module’s case temperature (Tc) changes comparatively gently while large
temperature change occurs at actuation pattern, the stress distortion occurs in the solder layer caused by the difference in
the thermal expansion coefficient between the base plate and the insulation substrate in Fig.4.
When this stress is repeated, a crack appears in the solder and when the crack reaches the bottom of the power
chip, it causes increased thermal resistance and thermal disruption. Finally, due to the thermal resistance increase,
the ΔTj increases and power-cycle proof decreases, and power cycle life reaches wire-shear mode. Fig.7 shows a
photograph of a solder layer crack between the insulation substrate and base plate caused by thermal cycle. Fig.8
shows the results of a thermal-cycle life test on module products carried out by the company.

Aluminum wire
Silicon chip Insulating substrate

Insulating substrate
Crack

Copper base plate

Copper base plate

Fig.7. Solder fatigue state after thermal-cycle test

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Power Module Reliability

1,000,000

100,000
cycle

10,000

1,000
10 100

⊿Tc [℃]
Fig.8. Mitsubishi IGBT module NF series thermal cycle life curve

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Power Module Reliability

3. Quality-guaranteeing activities
The quality, price, delivery and service of a product are all important elements but the most important thing as long
as the product exists is the quality of the product and the continuing service to the user of the product.
In the semiconductor industry, the quality levels required by products are very high. On the other hand, high quality
control is required in the mass-production systems with very advanced technology such as the process control
capability seen in the “wafer process” or the minute work seen in the “assembly process”.
A brief description of the quality-guaranteeing activities is given below.

3.1. Mass production procedures

From trial production in development through trial mass production until mass production, a series of type approval
tests are carried out for performance and reliability, along with an examination of a typical design illustration. Fig.9
shows a quality-guarantee system illustration from development through mass production.
The next chapter provides information on the reliability tests and reliability confirmation in the type-approval tests.

3.2. Environmental control

In the semiconductor industry, the environment greatly effects product quality and control limits are established
to control the environment precisely and monitor dust, moisture and temperature. The same measures are taken
with the gas and water used in the factory.

3.3. Periodic inspection of manufacturing equipment, instrumentation and maintenance control

The semiconductor industry is a manufacturing industry and control of the manufacturing equipment and
Instrumentation is important in device production. Regular checks and maintenance are performed to prevent any
decline in accuracy, faults, etc., in the device.

3.4. Material purchasing control

Strict analysis and inspection are performed using spectrum analysis etc. based on receipt inspection norms.
After sufficient sample examination has been performed to confirm the quality of the supplied materials and all
problems solved, formal delivery begins. Due consideration is also given to the quality control of the supplier’s
manufacturing process.

3.5. Manufacturing process control

The conditions that greatly influence quality control, such as purity of demineralized water atmosphere, furnace
temperature, gas flow rate, etc., are measured by instruments mounted on the respective parts, automatically
recorded and checked by engineers using check sheets. Moreover, processes that can have a larger effect on
characteristics, such as depth of diffusion, surface concentration, etc. are recorded and used in the control data for
working conditions. In addition, to assure stable quality, control is performed with data acquisition regarding the
assembly processes which affect the wire-bond process’ adhesion pressure, strength control, etc.

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3.6. Intermediate and final inspections

Our policy on intermediate and final inspections is thus: With the aim of measuring the reduction in variation and
improving the maintenance of quality, and thus producing better products, data on the product’s quality characteristics,
such as appearance, size, structure, and electrical characteristics, etc., are returned to the first manufacturing stage.
Intermediate inspections include wafer test and assembly process sampling inspections. All are carried out by two
independent checks: one by the works section, based on the motto of “making quality from the manufacturing process”,
and one by the quality-control section. By correcting quality according to the independent checks, we are able to check
on points that are hard to discover in the finished product. After product completion the final inspection is conducted
as a finished-goods inspection. Finally, electrical properties and external appearance are inspected.
From the viewpoint of the customer who will use the product, to confirm the total performance and quality of the
product, before the product is stored it is again sampled and subjected to quality guaranteeing inspections for
external appearance, electrical characteristics and reliability. The quality of the warehouse is also strictly
checked for each lot.

3.7. Quality information

Various data on quality, such as inspection results and customer information, is created mainly in the quality
guaranteeing section, and is rapidly sent to the related section including a manufacturing department for the
continued improvement of quality.

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Fig.9. Schematic flow chart of quality assurance program

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4. Reliability Tests
4.1 Reliability Test Method
Mitsubishi semiconductor devices can be used with full satisfaction because they are built to high levels of reliability:
precise quality control through the design and manufacturing processes along with quality-guaranteeing inspections
of every production lot assures high reliability. Various reliability tests are performed to check the level of reliability.
The contents of the test are shown in Table 1, the example of test results and failure criteria for the representative
type of power modules are shown in Table 2-Table [Link] semiconductor devices are tested for reliability
based on the standard of Japan Electronics and Information Technology Industries Association (JEITA). (Related
standard: International Electrotechnical Commission Standard( IEC standard)).
Table 1. Mitsubishi power module reliability tests
Item Method (JEITA) Conditions Related Standard
Thermal Shock ED 4701 307B Condition A : 100℃ : 5min., 0℃ : 5min., 10 cycle IEC60068-2-14
Temperature Cycle 〃 105A -40℃ (60min.)~125℃ (60min.), 10 cycle IEC60068-2-14
Vibration － － 10~500Hz/15min., 10G, 6 hours IEC60068-2-6
Terminal strength ED 4701 401 9.8~40N, 10 ± 1sec. IEC60068-2-21
‘or 401A 2.2N ,30sec
Soldering 〃 302A Condition A: 260℃,10 +2/-０sec. IEC60068-20
Environmental Testing

Thermostability ‘or Condition A-1: 270℃,7 +2/-０sec.

‘or Condition B:350℃,3.5±0.5sec.
, use of rosin-type flux

Solderbility 〃 303A Condition A: 235 ± 5℃, 5 ± 0.5sec. or IEC60068-20

Condition C: 245 ± 5℃, 5 ± 0.5sec.

, use ofrosin-type flux

Mounting strength 〃 402 M8 : 8.83~10.8N • m, 10 ± 1sec. －

M6 : 2.94~4.5N • m, 10 ± 1sec.

M5 : 1.96~3.5N • m, 10 ± 1sec.

M4 : 1.47~1.7N • m, 10 ± 1sec.
M3 : 0.98N • m, 10 ± 1sec.
High Temperature 〃 201A Ta=125℃, 1000 hours IEC60068-2-2
Storage
Low Temperature 〃 202A Ta=-40℃, 1000 hours IEC60068-2-1
Storage
Endurance Testing

Moisture Resistance 〃 103A Condition B: Ta=60℃, RH=90%, 1000 hours IEC60068-3-4

‘or
Condition C: Ta=85℃, RH=85%, 1000 hours
High Temperature 〃 101A Ta=125℃, VCE=max. rating voltage ×0.85V, －
Reverse Bias VGE=0V, 1000 hours
High Temperature Gate 〃 101A Ta=125℃,VCE=20V,VGE=0V,1000hours －
Bias
Intermittent operating life 〃 106A,601 △Tc=50℃,5000cycle －
～603 (△Tj=100℃)

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Table 2. IGBT module: CM300DY-24NF reliability test results

Item Method (JEITA) Conditions Samples Faults
Thermal Shock ED 4701 307B Condition A : 100℃: 5min.,0℃ : 5min., 10 cycle 5 0
Temperature Cycle 〃 105A -40℃(60min.) ~ 125℃ (60min.), 10 cycle 5 0
－ － 5 0
Environmental Testing

Vibration Condition B: 10~500Hz/15min., 10G, 6 hours

Terminal strength ED 4701 401 40N, 10 ± 1sec. 5 0
Soldering 〃 302A Condition A: 260 ± 5℃, 10 ± 1sec., use of 5 0
Thermostability rosin-type flux
Solderbility 〃 303A Condition A: 235 ± 5℃, 5 ± 0.5sec., use of 5 0
rosin-type flux
Mounting strength 〃 402 Mounting screw (M6): 4.5N • m, 10 ± 1sec. 5 0
Main terminal screw (M6): 4.5N • m, 10 ± 1sec.
High Temperature 〃 201A Ta=125℃, 1000 hours 5 0
Storage
Low Temperature 〃 202A Ta=-40℃, 1000 hours 5 0
Endurance Testing

Storage
Moisture Resistance 〃 103A Condition B: Ta=60℃, RH=90%, 1000 hours 5 0
High Temperature 〃 101A Ta=125℃, VCE=1020V,VGE=0V, 1000 hours 5 0
Reverse Bias
High Temperature 〃 101A Ta=125℃,VCE=20V,VGE=0V,1000hours 5 0
Gate Bias
Intermittent 〃 106A,602 Tc=50～100℃,5000 cycle 5 0
operating life ～603

Table 3. CM300DY-24NF failure criteria

Failure criteria
Item Conditions Notes
Lower Limit Upper Limit
ICES VCE=1200V, VGE=0V － U.S.L.×2.0
IGES VGE=±20V, VCE=0V － U.S.L.×2.0
VGE(th) IC=30mA, VCE=10V L.S.L.×0.8 U.S.L.×1.2
VCE(sat) IC=300A, VGE=15V － U.S.L.×1.2
VEC IE=300A, VGE=0V － U.S.L.×1.2
Dielectric strength AC2500V, 1minute Dielectric breakdown
Note: U.S.L. : Upper Specification Limit; L.S.L. : Lower Specification Limit

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Table 4. IPM : PM150RLA060 reliability test results

Item Method (JEITA) Conditions Samples Faults
Thermal Shock ED 4701 307B Condition A : 100℃: 5min.,0℃ : 5min., 10 cycle 5 0
Temperature Cycle 〃 105A -40℃(60min.) ~ 125℃ (60min.), 10 cycle 5 0
Vibration － － 10~500Hz/15min., 10G, 6 hours 5 0
Environmental Testing

Terminal strength ED 4701 401 9.8N, 10 ± 1sec. 5 0

‘
Soldering 〃 302A Condition A: 260 ± 5℃, 10 ± 1sec., use of 5 0
Thermostability rosin-type flux
Solderbility 〃 303A Condition A: 235 ± 5℃, 5 ± 0.5sec., use of 5 0
rosin-type flux
Mounting strength 〃 402 Mounting screw (M6): 4.5N • m, 10 ± 1sec. 5 0
Main terminal screw (M6): 4.5N • m, 10 ± 1sec.
High Temperature 〃 201A Ta=125℃, 1000 hours 5 0
Storage
Low Temperature 〃 202A Ta=-40℃, 1000 hours 5 0
Endurance Testing

Storage
Moisture 〃 103A Condition B: Ta=60℃, RH=90%, 1000 hours 5 0
Resistance
High Temperature 〃 101A Ta=125℃, VCE=510V,VGE=0V, 1000 hours 5 0
Reverse Bias
Intermittent 〃 106A,602 Tc=50～100℃,5000 cycle 5 0
operating life ～603

Table 5.PM150RLA060 failure criteria

Failure criteria
Item Conditions Notes
Lower Limit Upper Limit
ICES VCE=600V － U.S.L.×2.0
VCE(sat) IC=150A,VD=15V, Vcin=0V － U.S.L.×1.2
VEC IE=150A － U.S.L.×1.2
SC VD=15V, Vcin=0V L.S.L.×0.9 U.S.L.×1.2
UV Trip L.S.L.×0.9 U.S.L.×1.1
Dielectric AC2500V, 1minite Dielectric breakdown
strength
Note: U.S.L. : Upper Specification Limit; L.S.L. : Lower Specification Limit

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Table 6. DIPIPM: SLIMDIP－L reliability test results

Item Method (JEITA) Conditions Samples Faults
Thermal Shock ED 4701 307B Condition A : 100℃: 5min.,0℃ : 5min., 10 cycle 5 0
Temperature Cycle 〃 105 -40℃(30min.) ~ 125℃ (30min.), 100 cycle 5 0
Vibration － － Condition B: 10~500Hz/15min., 10G, 6 hours 5 0
Environmental Testing

Terminal strength ED 4701 401 10N(Power terminal),5N(control terminal), 5 0

10±1sec.
Soldering 〃 302 Condition A: 260 ± 5℃, 10 ± 1sec., use of 5 0
Thermostability rosin-type flux
Solderbility － － 250±5℃, 10±0.5sec., use of 5 0
rosin-type flux
Mounting strength ED 4701 402 M3･･･0.78N･m、10±1sec 5 0

High Temperature 〃 201A Ta=125℃, 1000 hours 5 0

Endurance Testing

Storage
Moisture Resistance 〃 103A Condition B: Ta=60℃, RH=90%, 1000 hours 5 0

High Temperature 〃 101 Ta=125℃, VCE=510V, 1000 hours 5 0

Reverse Bias
Intermittent 〃 106A,601 ΔTj=100℃, 5000cycle 5 0
operating life

Table 7. SLIMDIP－L failure criteria

Failure criteria
Item Conditions Notes
Lower Limit Upper Limit
ICES VCE=600V － U.S.L.×2.0
VEC -IC=15A － U.S.L.×1.2
VCE(sat) IC=15A, VD=VDB=15V, － U.S.L.×1.2
VIN=5V
VF IF=10mA － U.S.L.×1.2
ID VD=15V, VIN=0V － U.S.L.×2.0
IDB VD=VDB=15V, VIN=0V － U.S.L.×2.0
Dielectric Short circuits all terminals and Dielectric breakdown
strength imprints AC2000V, 1min.

between external heat

dissipation fins.

Note: U.S.L. : Upper Specification Limit; L.S.L. : Lower Specification Limit

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Table 8. HVIGBT：CM1200HC-34H reliability test results

Item Method (JEITA) Conditions Samples Faults
Thermal Shock ED 4701 307B 100°C:10min. , 0°C: 10min., 5 cycle 5 0
Environmental Testing

Temperature Cycle 〃 105A -40°C (60min.)~125: °C (60min.), 500 cycle 5 0

Vibration － － 10~500Hz/15min., 10G, each 2 hours X, Y, Z 5 0

High Temperature ED 4701 201A Ta=125°C, 1000 hours 5 0

Storage
Low Temperature 〃 202A Ta=-40°C, 1000 hours 5 0
Endurance Testing

Storage
Moisture Resistance 〃 103A Ta=60°C, RH=90%, 1000 hours 5 0
High Temperature 〃 101A Ta=125℃, VCE=max. rating voltage ×0.85V, 5 0
Reverse Bias 1000 hours
Intermittent 〃 106A,602 ΔTc= 70°C, 30000 cycle 5 0
operating life ～603

Table 9. CM1200HC-34H failure criteria

Failure criteria
Item Conditions Notes
Lower Limit Upper Limit
ICES VCE=1700V(rated voltage), － U.S.L.×2.0
Tj=25°C/125°C
IGES VGE=±20V － U.S.L.×2.0 Tj=25°C
VEC -IC=1200A(rated current) － U.S.L.×1.2
VCE(sat) IC=1200A(rated current), － U.S.L.×1.2
VG=15V
VGE(th) VCE=10V I.V.D.×0.5 I.V.D.×1.5
IC=120mA(rated current×10-4) L.S.L.×0.8 U.S.L.×1.2
Dielectric Short circuits all terminals, and No dielectric breakdown 34 class: 4000V; above
strength imprints AC4000 V (rms), 1min 50 class: 6000V
between external heat dissipation
fins.
Note: U.S.L. : Upper Specification Limit; L.S.L. : Lower Specification Limit

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Power Module Reliability PRELIMINARY or TENTATIVE

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Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable,
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Publication Date : 12/2019

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