Chapter 10
Fundamentals of the Metal-Oxide-Semiconductor
Field-Effect Transistors
Lecturer: Meng-Lin Tsai (蔡孟霖)
Office: E1-304-8
Extension: 6537
Email: mltsai@[Link]
1
Two-Terminal MOS Structure
The capacitance per unit area for this geometry is
permittivity
distance between two plates
The magnitude of the charge per unit area on either plate is
The magnitude of the electric field is
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Two-Terminal MOS (p-type) Structure
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Energy-Band Diagram of MOS (p-type)
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Two-Terminal MOS (n-type) Structure
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Depletion Layer Thickness (p-type)
The potential difference (φfp) between EF and Ei is
The surface potential (φs) is given by
At φs = 2φfp, n (surface) = p (bulk) Threshold inversion point
The space charge region reached a maximum 6
Example
Consider silicon at T = 300 K doped to Na = 1016 cm-3. The intrinsic carrier
concentration is ni = 1.5 × 1010 cm-3. Calculate the maximum space charge width
for the MOS structure.
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Depletion Layer Thickness (n-type)
The potential difference (φfn) between EF and Ei is
At φs = 2φfn, p (surface) = n (bulk) Threshold inversion point
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Doping Dependent Maximum Depletion Width
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Surface Charge Density
For p-type substrate, the electron inversion charge density can be written as
Define nst as the surface charge density at the inversion point
10
Work Function Differences
11
Work Function Differences
For a MOS structure, comparing the energies from both sides
⇒
The work function difference between metal and semiconductor can be
defined as
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Example
For an aluminum-silicon dioxide junction, φ’m = 3.20 V and, for a silicon-silicon
dioxide junction, χ’ = 3.25 V. Assume that Eg = 1.12 V. Let the p-type doping be Na =
1015 cm-3. Determine the metal-semiconductor work function difference for a
given MOS system and semiconductor doping.
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Work Function Differences
For degenerately doped semiconductor, assume EF = Ec for n-type and EF = EV
for p-type
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Flat-Band Voltage
Due to defects in oxide, charge can form within the oxide near the oxide-
semiconductor interface. At VG = 0 V,
If gate bias is applied
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Flat-Band Voltage
Under flat-band condition
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Example
Consider a MOS capacitor with a p-type silicon substrate doped to Na = 1016 cm-3, a
silicon dioxide insulator with a thickness of tox = 20 nm, and an n+ polysilicon gate.
Assume that Q’ss = 5 × 1010 electronic charges per cm2, calculate the flat-band
voltage for a MOS capacitor with a p-type semiconductor.
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Threshold Voltage
At the inversion point
At threshold voltage
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Threshold Voltage
The voltage across the oxide can be written as
Therefore, the threshold voltage can be expressed as
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Example
Consider a p-type silicon substrate at T = 300 K doped to Na = 1015 cm-3. Let Q’ss =
1010 cm-2, tox = 12 nm, and assume the oxide is silicon dioxide, calculate the
threshold voltage of a MOS using an aluminum gate.
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Accumulation Mode
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Depletion Mode
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Inversion Mode
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The Basic MOSFET Operation
n-channel enhancement mode n-channel depletion mode
p-channel enhancement mode p-channel depletion mode
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pn Junction
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Total pn Junction Current
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Current Voltage Relationship
If VGS < VT, ID ~ 0
If VGS > VT, for small VDS values
The channel conductance (gd) is given by
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Current Voltage Relationship
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Current Voltage Relationship (n channel)
In the nonsaturation region
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Current Voltage Relationship (n channel)
In the saturation region
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Current Voltage Relationship (p channel)
In the nonsaturation region
In the saturation region
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Current Voltage Relationship
Assume
(1) Drift current only
(2) No Ig (gate current)
(3) Ex is constant
(4) Any fixed oxide charge is an equivalent charge in the oxide-semiconductor
interface
(5) μ in the channel is constant
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Current Voltage Relationship
From Ohm’s Law
By integrating the current density
The inversion layer charge per unit area is
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Current Voltage Relationship
By charge neutrality
From Gauss’s Law
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Current Voltage Relationship
From the band diagram
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Current Voltage Relationship
The electric field on oxide is
Recall
By integrating the current along the channel length and assume ID = -Ix
36
Current Voltage Relationship
Taking
The peak current occurs when
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Geometry of a MOSFET
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Example
Consider an ideal n-channel MOSFET with parameters L = 1.25 μm, μn = 650
cm2/V-s, Cox = 6.9 × 10-8 F/cm2, and VT = 0.65 V. Design the channel width W such
that ID (sat) = 4 mA for VGS = 5 V.
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ID-VG Characteristics
Saturation region
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Example
Consider an n-channel MOSFET with W = 15 μm, L = 2 μm, and Cox = 6.9 × 10-8
F/cm2. Assume that the drain current in the nonsaturation region for VDS = 0.10 V
is ID = 35 μA at VGS = 1.5 V and ID = 75 μA at VGS = 2.5 V, determine the inversion
carrier mobility.
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Problems
10.1, 10.2, 10.5, 10.7, 10.33, 10.45
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