PRODUCT/PROCESS

® CHANGE NOTIFICATION
PCN APG-PTS/14/8446
Dated 07 May 2014

SO8 Package: Assembly site transfer from ST Muar to ST Shenzhen

1/5
 PCN APG-PTS/14/8446 - Dated 07 May 2014

Table 1. Change Implementation Schedule

Forecasted implementation date for 30-Jun-2014
change

Forecasted availability date of samples 30-Apr-2014

for customer

Forecasted date for STMicroelectronics

change Qualification Plan results availability 30-Apr-2014

Estimated date of changed product first 30-Jun-2014

shipment

Table 2. Change Identification

Product Identification see list
(Product Family/Commercial Product)

Type of change Package assembly location change

Reason for change Optimization and Service Improvement

Description of the change Please be informed that products housed in SO8 package from ST Muar
will be transferred to ST Shenzhen Assy Plant (conversion to
Lead -Free, whenever applicable).

Change Product Identification Marking code "99" identify Muar Assy plant

Manufacturing Location(s) 1]St Muar - Malaysia

® 2/5
 PCN APG-PTS/14/8446 - Dated 07 May 2014

DOCUMENT APPROVAL

Name Function

Liporace, Nicola Marketing Manager

Pernigotti, Elena Maria Marketing Manager

Cassani, Fabrizio Product Manager

Nicoloso, Riccardo Product Manager

Minerva, Francesco Q.A. Manager

Pintus, Alberto Q.A. Manager

® 4/5
SO8 Package: Assembly site transfer from ST Muar to ST Shenzhen

WHAT:
Please be informed that product housed in SO8 package from ST Muar will be transferred to ST Shenzhen
assembly Plant (conversion to Lead‐Free, whenever applicable).

WHY:
• Our lead frame supplier DCI announced recently his “stamped” lead frame activity closure.
• Taking advantage of the need to immediately activate a second source qualification, we have decided to
move the assy process to Shenzhen for production rationalization and service improvement reasons

HOW:
See enclosed the qualification Reports:
‐RR000414CT2235
‐RR002314CS2039
‐RR002414CS2039

WHEN:
The change will be implemented starting from the end of June 2014. Please be informed that the DCI lead
frame stock will allow the production continuity only until the end of 2014, forcing the transfer to Shenzhen
early 2015 latest.

See below List of products involved

LINE PRODUCT
U52003 L9820D
U52003 L9820D013TR
U53703 09352534TR
U53703 E-L9637D
U53703 E-L9637D013TR
U71303 L9613B
U71303 L9613B013TR
UH0103 L4979D
UH0103 L4979D-E
UH0103 L4979D013TR
UH0103 L4979DTR-E
UH2103 L4989D013TR
UH4403 L4993D
UH4403 L4993DTR
UH7103 L4988D
UH7103 L4988DTR
UN4303 L5150CS
UN4303 L5150CSTR
 Automotive Product Group
Quality and Reliability – Catania Team
Reliability Report

SO8 assembly site transfer

from ST Muar to ST Shenzhen

BIPOLAR and BCDOFF/2/3/4/5 technologies

Revision history

Rev. Date of Release Author Changes description

0.1 April 3, 2014 F. Ceraulo - APG Q&R Catania Creation

RR000414CT2235 Page: 1 of 9
 Automotive Product Group
Quality and Reliability – Catania Team
Reliability Report

Table of contents
Section Pag Content

1 3 Reliability evaluations overview

1.1 3 Objectives

1.2 4 Results

2 5 Traceability

3 6 Reliability qualification plan and results – Summary table

RR000414CT2235 Page: 2 of 9
 Automotive Product Group
Quality and Reliability – Catania Team
Reliability Report
- 1. Reliability evaluations overview
1.1 Objectives

Aim of this report is to present the results of the reliability evaluations performed on several products
chosen as test vehicles to qualify the SO8 assembly site transfer from ST Muar (Malaysia) to ST
Shenzhen (China).

Here below the test vehicles matrix with the raw material details:

ST silicon line
Raw material W023 U356 U520 UC24 UH01 UN43
FE Technology BIP BCD Offline BCD2 BCD3 BCD4 BCD5
FE Diffusion Fab AMK6
Die size (mm2) 4.23 4.18 4.08 3.91 3.42 2.82
Die finishing front SiN SiN SiN SiN USG‐PSG‐SiON‐PIX USG‐PSG‐SiON‐PIX
Die finishing back CrNi Lapped silicon CrNi Raw Si Raw Si CrNIAu
L/F description FRAME SO 8L 94x125
Au wire diameter (mils) 1 1 1.3 1 1 1
Molding compound SUMITOMO EME‐G700KC
Die attach Glue ABLEBOND

The qualification was done according to AEC_Q100 Rev.G specification applying a family approach
due to specific similarity among the different test vehicles. In the below table the applied stress test
as well as a comparison between the AEC-Q100 and ZVEI requirements is reported:

Test Group A Test Group B Test Group C Test Group D

THB AC TC PTC HTSL HTOL ELFR WBS WBP SD PD HBM CDM LU ED GL

AEC‐Q100 x x x x x x x x x x x x

ZVEI x x x x x x x x x x x x

Commercial
Silicon Line
product

L4949 W023 x x x NA x x x x x x x x x x x x

U356 x x x NA x x x x x x x x x

L9820D U520 x x NA x x x x x x x x x

UC24 x x x x x x x x

L4979D UH01 x x x x x x x x x x x x x x x

L5150CJ UN43 x x x x x x x x x x x

In this report the results of the product identified in yellow in the above table are reported, per each of
them see stress test details in section 3 of this report.

RR000414CT2235 Page: 3 of 9
 Automotive Product Group
Quality and Reliability – Catania Team
Reliability Report

1.2 Results

All reliability tests have been completed with positive results neither functional nor parametric rejects
were detected at final electrical testing.

The Wire Bond Pull/Shear tests (WBP, WBS) as Package Assembly Integrity (test Group C) pointed
out neither abnormal break loads nor forbidden failure modes both before and after stress test.

Based on the overall positive results we consider the products qualified from a reliability
point of view.

RR000414CT2235 Page: 4 of 9
 Automotive Product Group
Quality and Reliability – Catania Team
Reliability Report
- 2. Traceability

Wafer fab information

L4949 L9820D L4979D L5150CJ
W023 U520 UH01 UN43
Wafer fab
manufacturing ST AMK6 Ang Mo Kio (Singapore)
location
Wafer diameter
6
(inches)
Silicon process
BIP BCD2 BCD4 BCD5
technology
Die finishing
CrNi CrNi Raw Si CrNIAu
back side
Die size (mm2) 4.23 4.08 3.42 2.82
Metal levels / 2 layer/AlSiCu 3 layer /
2 layer/AlSi
materials 2 layer / AlSi 1.2µm last level 1.1µm last AlSiCu 3µm
3µm last level
level last level
Die finishing USG-PSG- USG-PSG-
SiN SiN
front side SiON-PIX SiON-PIX
Diffusion Lots # 1: 6222KTF
2: 62302LE 62348YE 6232T37 62149N2
3: 62302LF

Assembly Information
L4949 L9820D L4979D L5150CJ
W023 U520 UH01 UN43
Assembly plant
ST Shenzhen (China)
location
Package
SO8
description
Molding
SUMITOMO EME-G700KC
compound
Wires bonding
Au 1mils Au 1.3mils Au 1mils Au 1mils
material/diameter
Die attach
Glue ABLEBOND
material
Assembly Lots # 1: 993050PU01(NN), 993050PURR(HH), 993050PURQ(LL), 993180LY01 993190DG01 993340DM01
2: 993050Q001(NN), 993050Q0RR(HH), 993050Q0RQ(LL), 993180LX01 993190DH01
3: 993050PW01(NN), 993050PWRR(HH), 993050PWRQ(LL), 993180M001 993190DI01

NOTE: the L4949 was chosen as main test vehicle having

max die size representing the worst case. The reliability
evaluation on this product was done by using lots with
different assembly configurations both in terms of Bonding
Force and Ultra-Sonic Power: 3 lots nominal (NN), 6 lots
worst cases (HH: Highest Bonding Force and Highest US
Power, LL: Lower Bonding Force and Lower US Power)

Reliability Information
Reliability test execution location ST Catania (Italy)

RR000414CT2235 Page: 5 of 9
 Automotive Product Group
Quality and Reliability – Catania Team
Reliability Report
- 3. Reliability qualification plan and results

Test group A: Accelerated Environment Stress

AEC Sample Size/ Results

Test Name STM Test Conditions Comments
# Lots Fails/SS/Lots
PC - Preconditioning according to
Pre Cond Jedec JESD22-A113F
including 5 Temperature Cycling
Ta=-40ºC/+60ºC
A1
- Reflow according to level 3 Jedec Before THB, AC, TC, HTOL
JSTD020D-1
- 100 Temperature Cycling
Ta=-50ºC/+150ºC
THB
Temp Ta=85ºC, RH=85%, Vcc=24V for 3 lots x W023
A2 77/4 0/77/4
Humidity 1000 hours 1 lot x UH01
Bias
AC ENV. SEQ. Enviromental Sequence
Autoclave 9 lots x W023
TC (Ta=-65ºC / +150ºC for 100 3 lot x U520
A3 77/16 0/77/16
cycles) + 3 lots x UH01
AC (Ta=121ºC, Pa=2atm for 96 1 lot x UN43
hours)
TC 9 lots x W023
Temp. 3 lot x U520
A4 Ta=-65ºC / +150ºC for 500 cycles 77/16 0/77/16
Cycling 3 lots x UH01
1 lot x UN43
PTC
Power
A5 Ta=-40ºC / +125ºC for 1000 cycles. 45/1 0/45/1 1 lot x UH01
Temp.
Cycling
HTSL 9 lots x W023
High Temp. 3 lot x U520
A6 Ta=150ºC for 1000 hours. 45/16 0/45/16
Storage Life 3 lots x UH01
1 lot x UN43

Test group B: Accelerated Lifetime Simulation

AEC Sample Size/ Results

Test Name STM Test Conditions Comments
# Lots Fails/SS/Lots
HTOL Bias Dynamic stress (JESD22-
High Temp. 3 lots x W023
B1 A108): Ta=125ºC, Vcc=28V for 77/4 0/77/4
Op. Life 1 lot x UH01
1000 hours
ELFR Parts submitted to HTOL per
B2 Early Life JESD22-A108 requirements; Passed Family data
Failure Rate GRADE 1: 24 hours at 150ºC
EDR
Endurance
B3 Only for memory devices - - Not Applicable
Data
Retention

RR000414CT2235 Page: 6 of 9
 Automotive Product Group
Quality and Reliability – Catania Team
Reliability Report

Test group C: Package Assembly Integrity

AEC Sample Size/ Results

Test Name STM Test Conditions Comments
# Lots Fails/SS/Lots
WBS All 9 lots x W023
30 bonds
Wire Bond measurement 3 lot x U520
C1 Per AEC-Q100-001 /minimum 5 within spec
Shear 3 lots x UH01
units/1 lot limits 1 lot x UN43
WBP All 9 lots x W023
30 bonds
Wire Bond Per MIL-STD883, M2011 Condition measurement 3 lot x U520
C2 /minimum 5 within spec
Pull C or D 3 lots x UH01
units/1 lot limits 1 lot x UN43
SD All 9 lots x W023
Solderability measurement 3 lot x U520
C3 15/16 within spec 3 lots x UH01
limits 1 lot x UN43
PD All 9 lots x W023
Physical measurement 3 lot x U520
C4 10/16 within spec
Dimensions 3 lots x UH01
limits 1 lot x UN43
SBS
C5 Solder Ball Only for BGA package - - Not Applicable
Shear
LI
Lead Not required for Surface Mount
C6 - - Not Applicable
Integrity Devices

Test group D: Die Fabrication Reliability

AEC Sample Size/ Results

Test Name STM Test Conditions Comments
# Lots Fails/SS/Lots
EM
D1 Electromigration Not Applicable

TDDB
Time
D2 Dependent Not Applicable
Dielectric
Breakdown
HCI
D3 Hot Carrier Not Applicable
Injection
NBTI
Negative Bias
D4 Not Applicable
Temperature
Instability
SM
D5 Stress Migration Not Applicable

RR000414CT2235 Page: 7 of 9
 Automotive Product Group
Quality and Reliability – Catania Team
Reliability Report

Test group E: Electrical Verification

AEC Sample Results

Test Name STM Test Conditions Comments
# Size/ Lots Fails/SS/Lots
ESD 1 lot x W023
HBM 1 lot x U520
E2 HBM=[R=1.5kΩ, C=150pF] 1 lot ±2.0kV
1 lot x UH01
1 lot x UN43
ESD ±500V 1 lot x W023
CDM ±750V (Corner 1 lot x U520
E3 1 lot
pins) 1 lot x UH01
1 lot x UN43
LU Inj-L/Inj-H@125°C:
Latch-Up ±100mA all pins 1 lot x W023
Injection current : ±100mA Inj+L/Inj+H@125°C: 1 lot x U520
E4 6/1
Over voltage: 1.5 x Vop max ±100mA all pins 1 lot x UH01
1 lot x UN43
OV: passed
ED
Electrical 1 lot x W023
E5 30/2 Done
Distributions 1 lot x UH01
CHAR
E7 Characterization - Not Applicable

GL
E8 Gate Leakage 6/1 PASSED 1 lot x W023

EMC
E9 Electromagnetic - - Not Applicable
Compatibility
SC
Short Circuit
E10 According to AEC-Q100-012 - Not Applicable
Characterization

Test group F: Defects Screening Tests

AEC Sample Results

Test Name STM Test Conditions Comments
# Size/ Lots Fails/SS/Lots
PAT
F1 Process Average
Testing Not performed on qualification lots listed on
traceability section of this report.
SBA To be implemented starting from
Statistical first production lot
F2
Bin/Yield
Analysis

RR000414CT2235 Page: 8 of 9
 Automotive Product Group
Quality and Reliability – Catania Team
Reliability Report

Test group G: Cavity Package Integrity Tests

AEC Sample Results

Test Name STM Test Conditions Comments
# Size/ Lots Fails/SS/Lots
MS
G1 Mechanical
Shock
VFV
Variable
G2
Frequency
Vibration
CA
G3 Constant
Acceleration
GFL
G4 Gross/Fine Leak

Not applicable: not for plastic packaged devices

DROP
G5 Package Drop

LT
G6 Lid Torque

DS
G7 Die Shear

IWV
Internal Water
G8
Vapor

RR000414CT2235 Page: 9 of 9
 Reliability Report
APG RR002314CS2039

Reliability Report
U356ba6 - L9856
SO8 transfer to Shenzhen

General Information Locations

Product line / version U356 / ba Wafer fab Ang Mo Kio 6”
Commercial name L9856 Assembly plant ST Shenzhen
Product description High voltage high-side driver Reliability assessment Passed
Product group / division APG / Powertrain & Safety
Package SO 08 Strip single island4+3+1
Silicon process technology BCD OFFLINE

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 Reliability Report
APG RR002314CS2039

TABLE OF CONTENTS

1 RELIABILITY EVALUATION OVERVIEW ......................................................................................................3

1.1 OBJECTIVES ............................................................................................................................................3
1.2 EXTRACT FROM AEC-Q100 PROCESS CHANGE QUALIFICATION GUIDELINES. ................................................4
1.3 CONCLUSION ...........................................................................................................................................4
2 DEVICE CHARACTERISTICS ........................................................................................................................5
2.1 DEVICE DESCRIPTION ...............................................................................................................................5
2.2 PINOUT ...................................................................................................................................................5
2.3 PIN DESCRIPTION .....................................................................................................................................5
2.4 PACKAGE OUTLINE DESCRIPTION ...............................................................................................................6
2.5 BONDING DIAGRAM ...................................................................................................................................8
2.6 TRACEABILITY ..........................................................................................................................................9
3 RELIABILITY TEST RESULTS .....................................................................................................................10
3.1 RELIABILITY TEST PLAN AND RESULT SUMMARY .........................................................................................10
3.2 TEST RESULT SUMMARY BASING ON AEC-Q100 QUALIFICATION TEST PLAN TEMPLATE ................................11
3.3 TEST DESCRIPTION ................................................................................................................................15
4 ATTACHMENTS ...........................................................................................................................................16
4.1 HTOL SCHEMATIC .................................................................................................................................16
4.2 HTOL PATTERN .....................................................................................................................................17
4.3 HTOL WAVEFORMS OVERVIEW ...............................................................................................................18
4.4 THB / HTRB SCHEMATIC........................................................................................................................19
5 TEST GLOSSARY ........................................................................................................................................20
6 REVISION HISTORY .....................................................................................................................................20

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 Reliability Report
APG RR002314CS2039

1 RELIABILITY EVALUATION OVERVIEW

1.1 Objectives
Aim of this report is to present the results of the reliability evaluation performed on U356ba6 (L9856) assembled in
SO8 Shenzhen.

U356 is one of TV.s used to qualify the S08 transfer to Shenzhen.

Here below the devices in the same package on which qualification has been done.

DEVICE U356 UC24 U520

RL SMKU*U356BA6 SMKU*UC24AA6 SMKU*U520CB6
FE Process BCD Offline BCD3 BCD2
FE Fab AMK6 AMK6 AMK6
BPO 90*90 90*90 127*127
Die area 2200*1900 1680*2330 2270*1800
Front/back side metal SiN (nitride) / Lapped silicon SiN (nitride) / Raw Si SiN (nitride) / CrNi
L/F descr FRAME SO 8L 94x125 FRAME SO 8L 94x125 FRAME SO 8L 94x125
Frame option C C D
Au wire 1.0mil 3N 1.0mil 3N 1.3mil 4N
Resin SUMITOMO EME-G700KC SUMITOMO EME-G700KC SUMITOMO EME-G700KC
Glue ABLEBOND ABLEBOND ABLEBOND
Down bonding No No Wire on BTWG

DEVICE UN43 UH01 W023

RL SMKU*UN43BA6 SMKU*UH01BB6 SMKU*W023FB6
FE Process BCD5 BCD4 BIP
FE Fab AMK6 AMK6 AMK6
BPO 90*90 101*101
Die area 1530*1840 1700*2010 2160*1960
Front/back side metal USG-PSG-SiON-PIX / Raw Si SiN (nitride) / CrNi
L/F descr FRAME SO 8L 94x125 FRAME SO 8L 94x125 FRAME SO 8L 94x125
Frame option C C C
Au wire 1.0mil 3N 1.0mil 3N 1.0mil 4N
Resin SUMITOMO EME-G700KC SUMITOMO EME-G700KC SUMITOMO EME-G700KC
Glue ABLEBOND ABLEBOND ABLEBOND
Down bonding No No

U356 - L9856 is a driver for common-rail magnetic valve application.

For the reliability evaluation, the following tests have been carried out:

- PC (JL3) + 100cy TC + HTOL

- HTRB
- PC (JL3) + 100cy TC + THB
- PC (JL3) + 100cy TC + TC
- PC (JL3) + 100cy TC + AC
- HTSL
- ESD - CDM
- WBP and WBS.

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 Reliability Report
APG RR002314CS2039

1.2 Extract from AEC-Q100 process change qualification guidelines

Note1
In red the changes respect to previous.
Note2
PTC, SC not applicable (pre-driver device, doesn’t drive directly inductor, Pd<1W).
SBS not applicable (required for BGA only).
SER, MECH, DS, IWV not applicable (required for hermetic package only).
LI not applicable (required for through-hole package only).
GL not done, not mandatory.
Note3
WBS, SD, PD data from assy report.
ELFR data from burnin.

1.3 Conclusion
The reliability tests have been completed with positive results.
Neither functional nor parametric rejects were detected at final electrical testing; no significant parameter drift has
been found after HTOL and HTRB tests. WBP done after TC and HTSL is positive.
On the basis of the overall positive results, U356ba6 in SO8 (Shenzhen) can be qualified from a reliability
point of view.

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 Reliability Report
APG RR002314CS2039

2 DEVICE CHARACTERISTICS

2.1 Device description

L9856 is an high voltage device, manufactured in BCD "OFFLINE" technology.
It has the capability of driving N-channel power MOS transistors. The upper (floating) section is enabled to work
with voltage rail up to 160V. The logic inputs are CMOS/TTL compatible.

Features
High voltage rail up to 160V
dV/dt immunity ±50V/nsec in full temperature range
Driver current capability:
500mA source,
500mA sink
Switching times 100ns rise/fall with 2.5nF load
CMOS/TTL Schmitt trigger inputs with hysteresis
Under voltage lock out
Clamping on VCC
Loading circuit for external bootstrap capacitor
Inverting input
Reset circuitry

2.2 Pinout

2.3 Pin description

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 Reliability Report
APG RR002314CS2039

2.4 Package outline description

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 Reliability Report
APG RR002314CS2039

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 Reliability Report
APG RR002314CS2039

2.5 Bonding diagram

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 Reliability Report
APG RR002314CS2039

2.6 Traceability

Wafer fab information

Manufacturing location Ang Mo Kio 6”
Silicon process technology BCD OFFLINE
Die size 2200 µm, 1900 µm
Passivation SiN
Back side die finishing Lapped silicon
Metallization 1 metal layer
Raw line code SMKU*U356BA6
Diffusion lots V6235K3V V6313K9F
Trace codes GK3090HB GK33309Y
U356NN / ST GK309 L9856 / ST GK333
Markings U356HH / ST GK309
U356LL / ST GK309

Assembly information
Assembly plant ST Shenzhen - China
Package SO 08 Strip single island 4+3+1
Wire Au 3N 1 mil
Resin Sumitomo EME-G700KC
Die attach Ablebond 8601S-25
Frame description SO 8L 94x125 Mt HD OpC NiThPdAgAu

Testing information
Tester QT200 pwr
Programs U356FA01, U356FH01, U356FC01
Testing site Muar

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 Reliability Report
APG RR002314CS2039

3 RELIABILITY TEST RESULTS

3.1 Reliability test plan and result summary

Tracecode: GK3090HB
Test Result
N. Condition Note
name Fail / Sample size
PC 24h bake, 192h 30°C / 60%, 3 reflow (Tpeak=260°C) +
1 0 / 308-135-135 Before HTOL, THB, AC, TC
(JL3) + 100cy 1
2 HTRB Tj= 150°C, VB=418V, VCC=18V, t=1000h 0 / 45 2
extended to 2000h
3, 4
3 HTOL Tj=150°C, VBVD=150V, VBD=18V, VCCD=5V, t=1000h 0 / 77
4 THB Ta=85°C, R.H.=85%, VB=100V, VCC=18V, t=1000h 0 / 77-45-45
5
extended to 2000h

5 TC Ta= -50°C / 150°C, n=1000cy 0 / 77-45-45 5, 6

extended to 2000cy
6 AC Ta=121°C, P=2.08atm, t=96h 0 / 77-45-45
7 HTSL Ta= 150°C, t=1000h 0 / 45-40-40 5, 6
extended to 2000h
5, 6, 7
8 ESD Charge Device Model 0 / 15
Notes
1
After PC (JL3), TC ( 100cy, -50°C/+150°C ) has been performed.
2
No significant drift on key parameters after 0h-2000h drift analysis.
3
No significant drift on key parameters after 0h-1000h drift analysis.
4
Tested at 3T (hot / cold gonogo, ambient with datalog).
5
Tested at 2T (hot / ambient gonogo).
6
Wire Bond Pull (WBP) and Wire Ball Shear (WBS) have been performed on virgin parts with positive results (data from assy report).
After TC and HTSL ( 2000cy/2000h ) tests, WBP has been performed with positive results (data in U356BA SO8_SHZ Physical Analysis
report).
7
ESD details:
Level Combination Result
+/-250V All pins 3 good
+/-500V All pins 3 good
+/-750V Corner pins 3 good
Extended level:
+/-1000V All pins 3 good
+/-1500V All pins 3 good

Tracecode:GK33309Y
Test Result
N. Condition Note
name Fail / Sample size
PC 24h bake, 192h 30°C / 60%, 3 reflow (Tpeak=260°C) +
1 0 / 308 Before HTOL, THB, ES, TC
(JL3) + 100cy 1
2
2 HTRB Tj= 150°C, VB=418V, VCC=18V, t=1000h 0 / 45
2, 3
3 HTOL Tj=150°C, VBVD=150V, VBD=18V, VCCD=5V, t=1000h 0 / 77
4
4 THB Ta=85°C, R.H.=85%, VB=100V, VCC=18V, t=1000h 0 / 77
4, 5
5 TC Ta= -50°C / 150°C, n=1000cy 0 / 77
6 ES 100cy + Ta=121°C, P=2.08atm, t=96h 0 / 77
4, 5
7 HTSL Ta= 150°C, t=1000h 0 / 45
Notes
1
After PC (JL3), TC ( 100cy, -50°C/+150°C ) has been performed.
2
No significant drift on key parameters after 0h-1000h drift analysis.
3
Tested at 3T (hot / cold gonogo, ambient with datalog).
4
Tested at 2T (hot / ambient gonogo).
5
Wire Bond Pull (WBP) and Wire Ball Shear (WBS) have been performed on virgin parts with positive results (data from assy report).
After TC and HTSL tests, WBP has been performed with positive results (data in U356BA SO8_SHZ Physical Analysis report ).

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APG RR002314CS2039

3.2 Test result summary basing on AEC-Q100 qualification test plan template

TEST GROUP A - ACCELERATED ENVIRONMENT STRESS TESTS

Tracecode: Tracecode:
Q100
GK3090HB GK33309Y
Q100 Test Testing sample
AEC# Test
reference conditions temperature s./
Note
Fails / Parts for each Fails / Parts / Lot
lots
split / Lot
24h bake All PC has
Ta=125°C prior to: been
PC JEDEC 192h AC, applied
A1 Room 0 / 308+135+135 / 1 0 / 308 / 1
Pre-Cond J-STD-020 Ta=30°C/60%=RH ES, also on
3 reflow simulation THB, HTOL parts
Tmax=260°C TC

THB
Ta=85°C
Temperature JESD22 Room
A2 RH=85% 77 / 3 0 / 77+45+45 / 1 0 / 77 / 1
Humidity A101/A110 Hot
1000h
Bias

P=2.08atm
AC JESD22
A3 Ta=121°C Room 77 / 3 0 / 77+45+45 / 1 0 / 77 / 1
Auto-clave A102/A118
96h

0 / 77+45+45 / 1 0 / 77 / 1
TC Hot
JESD22 Ta=-50/+150°C
A4 Temperature (and also 77 / 3 WBP WBP
A104 1000cy
Cycling Room) after 2000cy after 1000cy
passed (> 3gr) passed (> 3gr)
Not
applicable
(pre-driver
PTC device,
Power JESD22 Tj=-40/+150°C Room doesn’t
A5 45 / 1
Temperature A105 1000cy Hot drive
Cycle directly
inductor,
Pd<1W)

HTSL 0 / 77+45+45 / 1 0 / 45 / 1
High JESD22 Ta=150°C Room WBP WBP
A6 45 / 1
Temperature A103 1000h Hot after 2000h after 1000h
Storage Life passed (> 3gr) passed (> 3gr)

Note
Additional tests
High Temperature Reverse Bias [ Tj= 150°C, 1000h ] has been done with no failures.
Enviroment Storage [ TC (100cy -50ºC / 150°C) + AC 96h ] has been done with no failures.

Extended tests
High Temperature Reverse Bias 2000h No fails: 0 / 45 / 1 lot.
Temperature Humidity Bias 2000h No fails: 0 / 77+45+45 / 1 lot.
Temperature Cycling 2000cy No fails: 0 / 77+45+45 / 1 lot.
High Temperature Storage Life 2000h No fails: 0 / 77+45+45 / 1 lot.

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APG RR002314CS2039

TEST GROUP B – ACCELERATED LIFETIME SIMULATION TEST

Tracecode: Tracecode:
Q100
Q100 Test Testing GK3090HB GK33309Y
AEC# Test sample s./ Note
reference conditions temperature
lots
Fails / Parts / Lot Fails / Parts/ Lot
HTOL
High Room
JESD22 Tj=150°C
B1 Temperature Hot 77 / 3 0 / 77 / 1 0 / 77 / 1
A108 1000h
Operating Cold
Life
ELFR
AEC Q100 Tj=125°C Room Data
B2 Early Life 800 / 3 - -
008 24h Hot from Burnin
Failure Rate
EDR
Endurance Not applicable
AEC Q100
B3 Data (no memory
005
Retention inside)
Op. Life

TEST GROUP C – PACKAGE ASSEMBLY INTEGRITY TESTS

WBS Done in assy
AEC Q100 30 bonds
C1 Wire Bond Passed Passed plant on virgin
001 5 devices
Shear samples.
Done in assy
plant on virgin
WBP MIL-STD
30 bonds samples.
C2 Wire Bond 883 – Passed Passed
5 devices Done after TC.
Pull 2011
Done also after
HTSL.
Done in assy
SD JESD22
C3 15 / 1 Passed Passed plant on virgin
Solderability B102
samples.
PD Done in assy
JESD22
C4 Physical 10 / 3 Passed Passed plant on virgin
B100/B108
Dimension samples.

SBS 5 balls
AEC Q100 Not applicable.
C5 Solder Ball 10 - -
010 For BGA only
Shear devices

LI No lead Not required

JESD22
C6 Lead breakage or 5/1 - - for surface
B105
Integrity finish cracks mount devices.

TEST GROUP D – DIE FABBRICATION RELIABILITY TEST

Q100
Q100 Test Testing Results
AEC# Test sample s./ Note
reference conditions temperature Fails / Parts / Lot
lots
EM
D1 Electro- BCD OFFLINE process qual.
migration
TDDB
Time
D2 BCD OFFLINE process qual.
Dependent
Dielectric BV
HCI
D3 Hot Carrier BCD OFFLINE process qual.
Injection
NBTI
Negative
D4 Bias BCD OFFLINE process qual.
Temperature
Instability
SM
D5 Stress BCD OFFLINE process qual.
Migration

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TEST GROUP E – ELECTRICAL VERIFICATION TESTS

Tracecode: Tracecode:
GK3090HB GK33309Y
Q100 Test Testing Q100
AEC # Test Note
reference conditions temperature sample s./ lots
Results Results
Fails/ Parts/ Lot Fails / Parts/ Lot

E1 TEST All units All units All units

ESD MM / HBM
AEC Q100 Room 3 x Vlevel Not
E2 Electrostatic
002/3 Hot x pin comb. / 2 required
Discharge
±500V
ESD CDM All pins Done
AEC Q100 Room
E3 Electrostatic 3 x Vlevel / 2 0 / 15 / 1 but not
011 Hot
Discharge ±750V required
Corner pins
Current Injection
Power supply
LU AEC Q100 sequence Room Not
E4 12 / 2
Latch-up 004 Overvoltage on Hot required
power supply
Room / Hot
AEC Q100 Electrical
E5 ED passed passed
009 Distribution
AEC Q100 Not
E6 FG Fault Grading
007 applicable
Characterization
E7 CHAR AEC Q003
(Rm/Hot/Cold)
GL
Electro-Thermally
Electrothermally AEC Q100 Room Not
E8 Induced Gate 6/1 -
Induced Gate 006 Hot mandatory
Leakage: (Rm)
Leakage
Electromagnetic
Compatibility
EMC
SAE (Radiated Not
E9 Electromagnetic - -
J1752/3 Emissions): applicable
Compatibility
<40dBuV at
10kHz-1MHz
SC AEC Q100 Short Circuit Not
E10 - - -
Short Circuit 012 Characterization applicable
JESD89-1
Soft Error Not
E11 SER JESD89-2 - - -
Rate applicable
JESD89-3

TEST GROUP F – DEFECT SCREENING TEST

Q100 Test Testing Q100
AEC # Test Results Note
reference conditions temperature sample s./ lots
PAT
AEC
F1 Process Average See AEC Q001
Q001
Testing
SBA
AEC
F2 Statistical Bin See AEC Q002
Q002
Yield Analysis

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TEST GROUP G – CAVITY PACKAGE INTEGRITY TESTS

Q100
Q100 Test Testing Results
AEC # Test sample s./ Note
reference conditions temperature Fails / Parts/ Lot
lots
JEDEC
MS Not required for
JESD22
G1 Mechanical - surface mount
B104
Shock devices.
VFV JEDEC
Not required for
Variable JESD22
G2 - surface mount
Frequency B103
devices.
Vibration
MIL-STD
CA Not required for
883
G3 Constant - surface mount
Method
Acceleration devices.
2001
MIL-STD
GFL Not required for
883
G4 Gross/Fine - surface mount
Method
Leak devices.
1014

Not required for

DROP
G5 - - surface mount
Package Drop
devices.
MIL-STD
Not required for
LT 883
G6 - surface mount
Lid Torque Method
devices.
2024
MIL-STD
Not required for
DS 883
G7 - surface mount
Die Shear Method
devices.
2019
MIL-STD
IWV Not required for
883
G8 Internal Water - surface mount
Method
Vapor devices.
1018

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APG RR002314CS2039

3.3 Test description

Test name Description Purpose
The device is submitted to a typical As stand-alone test: to investigate the level of moisture
temperature profile used for surface sensitivity.
PC (JL3) mounting, after a controlled As preconditioning before other reliability tests: to verify that
Preconditioning moisture absorption. the surface mounting stress does not impact on the
(solder simulation) subsequent reliability performance. The typical failure modes
are "pop corn" effect and delamination.

The device is stressed in static The main failure mechanisms can be divided into two groups:
configuration, approaching the the first group includes those degradation phenomena which
absolute ratings in terms of junction take place in the silicon active areas and interconnections due
temperature and supply voltage, to the combined action of temperature and electrical fields. The
HTRB minimizing the power dissipation. second is linked to the plastic package. The key package
High Temperature Reverse Bias elements are the wire bonds and the pads. The test focuses
the attention on oxide ageing, parasitic surface effects induced
by mobile charge contamination.

The device is stressed in dynamic To simulate the worst-case application stress conditions. The
configuration, approaching the max. typical failure modes are related to electro-migration, wire-
HTOL operative ratings in terms of junction bonds degradation, oxide faults, thermo-migration.
High Temperature Operating Life temperature, load current, internal
power dissipation.

The device is submitted to cycled To investigate failure modes related to the thermo-mechanical
temperature excursions, between a stress induced by the different thermal expansion of the
TC hot and a cold chamber in air. materials interacting in the die-package system. Typical failure
modes are linked to metal displacement, dielectric cracking,
Temperature Cycling molding compound delamination, wire-bonds failures, die-
attach layer degradation.

The device is biased in static To investigate failure mechanisms activated in the die-package
configuration minimizing its internal environment by electrical field and wet conditions. Typical
THB power dissipation, and stored at failure mechanisms are electro-chemical corrosion and surface
Temperature Humidity Bias controlled conditions of ambient effects related to the molding compound.
temperature and relative humidity.
The unbiased device is stored in a This test is performed to point out critical water entry paths with
AC saturated steam, at fixed and consequent corrosion effects affecting die or package
controlled conditions of pressure materials, related to chemical contamination.
Autoclave and temperature.
The unbiased device is submitted to This test is performed to point out critical water entry paths with
cycled temperature excursions, consequent corrosion effects affecting die or package
ES between a hot and a cold chamber materials, related to chemical contamination.
Enviroment sequence in air and then is stored in a To emphatize the failure modes linked to water entry paths, the
saturated steam, at fixed and parts have been preceeded by JL3+TC200cy
(JL3+TC200cy+AC96h) controlled conditions of pressure
and temperature.
The device is stored in unbiased To investigate the failure mechanisms activated by high
condition at the max. temperature temperature, typically wire-bonds solder joint ageing,
HTSL allowed by the package materials, metal stress-voiding.
High Temperature Storage Life sometimes higher than the max.
operative temperature.

Each device lies on its back. It is To evaluate adequate pin protections to electrostatic
ESD (CDM) charged by field or by a charging discharge.
probe. Each pin individually is
Electrostatic Discharge
discharged through a discharging
(Charged Device Model) probe connected to ground.

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APG RR002314CS2039

4 ATTACHMENTS

4.1 HTOL schematic

Note
Jumper settings: JP1, JP3, JP4: open; JP2, JP7 closed.

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APG RR002314CS2039

4.2 HTOL pattern

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APG RR002314CS2039

4.3 HTOL waveforms overview

Pattern cycle HO, VS during pattern cycle

IN, VS, HO detail V_C2 (little overload)

Va negative peaks Va negative peak detail

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APG RR002314CS2039

4.4 THB / HTRB schematic

Note
The 400V value at Vs test point is valid only for HTRB.

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APG RR002314CS2039

5 TEST GLOSSARY

Test name Description

ESD (CDM) Electrostatic Discharge (Charged Device Model)
HTSL High Temperature Storage Life test
HTOL High Temperature Operating Life test
THB Temperature Humidity Bias test
TC Temperature Cycling test
AC Autoclave
ES Environmental Sequence
HTRB High Temperature Reverse Bias test
PC (JL3) Preconditioning (Jedec Level 3)
WBP Wire Bond Pull
WBS Wire Ball Shear

6 REVISION HISTORY

Version Date Pages Author

th
1.0 April 14 2014 20 [Link]

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APG RR002414CS2039

Reliability Report
UC24aa6
SO8 transfer to Shenzhen

General Information Locations

Product line / version UC24 / aa Wafer fab Ang Mo Kio 6”
Commercial name UC24-TR-X-S Assembly plant ST Shenzhen
Product group / division APG / Powertrain & Safety Reliability assessment Passed
Package SO 08 Strip single island4+3+1
Silicon process technology BCD3

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APG RR002414CS2039

TABLE OF CONTENTS

1 RELIABILITY EVALUATION OVERVIEW ......................................................................................................3

1.1 OBJECTIVES ............................................................................................................................................3
1.2 EXTRACT FROM AEC-Q100 PROCESS CHANGE QUALIFICATION GUIDELINES. ................................................4
1.3 CONCLUSION ...........................................................................................................................................4
2 PACKAGE OUTLINE DESCRIPTION .............................................................................................................5
2.1 BONDING DIAGRAM ...................................................................................................................................7
2.2 TRACEABILITY ..........................................................................................................................................8
3 RELIABILITY TEST RESULTS .......................................................................................................................9
3.1 RELIABILITY TEST PLAN AND RESULT SUMMARY ...........................................................................................9
3.2 TEST RESULT SUMMARY BASING ON AEC-Q100 QUALIFICATION TEST PLAN TEMPLATE ................................10
3.3 TEST DESCRIPTION ................................................................................................................................14
4 TEST GLOSSARY ........................................................................................................................................15
5 REVISION HISTORY .....................................................................................................................................15

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APG RR002414CS2039

1 RELIABILITY EVALUATION OVERVIEW

1.1 Objectives
Aim of this report is to present the results of the reliability evaluation performed on UC24aa6 assembled in SO8
Shenzhen.

UC24 is one of TV.s used to qualify the S08 transfer to Shenzhen.

Here below the devices in the same package on which qualification has been done.

DEVICE U356 UC24 U520

RL SMKU*U356BA6 SMKU*UC24AA6 SMKU*U520CB6
FE Process BCD Offline BCD3 BCD2
FE Fab AMK6 AMK6 AMK6
BPO 90*90 90*90 127*127
Die area 2200*1900 1680*2330 2270*1800
Front/back side metal SiN (nitride) / Lapped silicon SiN (nitride) / Raw Si SiN (nitride) / CrNi
L/F descr FRAME SO 8L 94x125 FRAME SO 8L 94x125 FRAME SO 8L 94x125
Frame option C C D
Au wire 1.0mil 3N 1.0mil 3N 1.3mil 4N
Resin SUMITOMO EME-G700KC SUMITOMO EME-G700KC SUMITOMO EME-G700KC
Glue ABLEBOND ABLEBOND ABLEBOND
Down bonding No No Wire on BTWG

DEVICE UN43 UH01 W023

RL SMKU*UN43BA6 SMKU*UH01BB6 SMKU*W023FB6
FE Process BCD5 BCD4 BIP
FE Fab AMK6 AMK6 AMK6
BPO 90*90 101*101
Die area 1530*1840 1700*2010 2160*1960
Front/back side metal USG-PSG-SiON-PIX / Raw Si SiN (nitride) / CrNi
L/F descr FRAME SO 8L 94x125 FRAME SO 8L 94x125 FRAME SO 8L 94x125
Frame option C C C
Au wire 1.0mil 3N 1.0mil 3N 1.0mil 4N
Resin SUMITOMO EME-G700KC SUMITOMO EME-G700KC SUMITOMO EME-G700KC
Glue ABLEBOND ABLEBOND ABLEBOND
Down bonding No No

For the reliability evaluation of UC24, the following tests have been carried out:

- PC (JL3) + 100cy TC + TC.

- PC (JL3) + 100cy TC + AC/ES.
- HTSL.
- WBP and WBS.

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APG RR002414CS2039

1.2 Extract from AEC-Q100 process change qualification guidelines.

Note1
In red the changes respect to previous.
Note2
PTC, SC not applicable (Pd < 1W).
SBS not applicable (required for BGA only).
SER, MECH, DS, IWV not applicable (required for hermetic package only).
LI not applicable (required for through-hole package only).
GL not done, not mandatory.
THB, HTOL, ELFR not done (performed on other test vehicles).
Note3
WBS, SD, PD data from assy report / assy data.

1.3 Conclusion
The reliability tests have been completed with positive results.
Neither functional nor parametric rejects were detected at final electrical testing.
WBP done after TC and HTSL is positive.
On the basis of the overall positive results, UC24aa6 in SO8 (Shenzhen) can be qualified from a reliability
point of view.

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2 PACKAGE OUTLINE DESCRIPTION

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APG RR002414CS2039

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APG RR002414CS2039

2.1 Bonding diagram

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APG RR002414CS2039

2.2 Traceability

Wafer fab information

Manufacturing location Ang Mo Kio 6”
Silicon process technology BCD3
Die size 1680 µm, 2330 µm
Passivation SiN
Back side die finishing Raw silicon
Metallization 2 metal layers
Raw line code SMKU*UC24AA6
Diffusion lots V62306VX V6316KXV
Trace codes GK3100AV GK330A0
UC24NN / ST GK310 40060 / ST GK333
Markings UC24HH / ST GK310
UC24LL / ST GK310

Assembly information
Assembly plant ST Shenzhen - China
Package SO 08 Strip single island 4+3+1
Wire Au 3N 1 mil
Resin Sumitomo EME-G700KC
Die attach Ablebond 8601S-25
Frame description SO 8L 94x125 Mt HD OpC NiThPdAgAu

Testing information
Tester Sz
Program UC24FH01
Testing site Muar

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APG RR002414CS2039

3 RELIABILITY TEST RESULTS

3.1 Reliability test plan and result summary

Tracecode: GK3100AV
Test Result
N. Condition Note
name Fail / Sample size
PC 24h bake, 192h 30°C / 60%, 3 reflow (Tpeak=260°C) +
1 0 / 144-90-90 Before AC, TC
(JL3) + 100cy 1
2 TC Ta= -50°C / 150°C, n=1000cy 0 / 77-45-45 2, 3
extended to 1500cy
2
3 AC Ta=121°C, P=2.08atm, t=96h 0 / 77-45-45
4 HTSL Ta= 150°C, t=1000h 0 / 45-40-40 2, 3
extended to 2000h

Notes
1
After PC (JL3), TC ( 100cy, -50°C/+150°C ) has been performed.
2
Tested at 1T ( hot ).
3
Wire Bond Pull (WBP) and Wire Ball Shear (WBS) have been performed on virgin parts with positive results (data from assy report).
After TC and HTSL ( 1500cy/2000h ) tests, WBP has been performed with positive results (data in UC24AA SO8_SHZ Physical Analysis
report).

Tracecode: GK330A0
Test Result
N. Condition Note
name Fail / Sample size
PC 24h bake, 192h 30°C / 60%, 3 reflow (Tpeak=260°C) +
1 0 / 144 Before ES, TC
(JL3) + 100cy 1
2, 3
5 TC Ta= -50°C / 150°C, n=1000cy 0 / 77
2
6 ES 100cy + Ta=121°C, P=2.08atm, t=96h 0 / 77
2, 3
7 HTSL Ta= 150°C, t=1000h 0 / 45
Notes
1
After PC (JL3), TC ( 100cy, -50°C/+150°C ) has been performed.
2
Tested at 1T (hot ).
3
Wire Bond Pull (WBP) and Wire Ball Shear (WBS) have been performed on virgin parts with positive results (data from assy report ).
After TC tests, WBP has been performed with positive results (data in UC24AA SO8_SHZ Physical Analysis report).

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APG RR002414CS2039

3.2 Test result summary basing on AEC-Q100 qualification test plan template

TEST GROUP A - ACCELERATED ENVIRONMENT STRESS TESTS

Tracecode: Tracecode:
Q100 GK3100AV GK330A0
Q100 Test Testing
AEC# Test
reference conditions temperature
sample s./ Note
lots Fails / Parts for each Fails / Parts / Lot
split / Lot
24h bake
All
Ta=125°C
prior to:
PC JEDEC 192h
A1 Room AC, 0 / 144-90-90 / 1 0 / 144 / 1
Pre-Cond J-STD-020 Ta=30°C/60%=RH
ES,
3 reflow simulation
TC
Tmax=260°C
Not done
THB
Ta=85°C (performed
Temperature JESD22 Room
A2 RH=85% 77 / 3 on other
Humidity A101/A110 Hot
1000h test
Bias
vehicles).

P=2.08atm
AC JESD22
A3 Ta=121°C Room 77 / 3 0 / 77+45+45 / 1 0 / 77 / 1
Auto-clave A102/A118
96h

0 / 77+45+45 / 1 0 / 77 / 1
TC Hot
JESD22 Ta=-50/+150°C
A4 Temperature (and also 77 / 3 WBP WBP
A104 1000cy
Cycling Room) after 1500cy after 1000cy
passed (> 3gr) passed (> 3gr)

PTC Not
Power JESD22 Tj=-40/+150°C Room applicable
A5 45 / 1
Temperature A105 1000cy Hot (Pd<1W)
Cycle

HTSL 0 / 45+40+40 / 1
High JESD22 Ta=150°C Room WBP
A6 45 / 1 0 / 45 / 1
Temperature A103 1000h Hot after 2000h
Storage Life passed (> 3gr)

Note
Additional test
Enviroment Storage [ TC (100cy -50ºC / 150°C) + AC 96h ] has been done with no failures.

Extended tests
Temperature Cycling 1500cy No fails: 0 / 77+45+45 / 1 lot.
High Temperature Storage Life 2000h No fails: 0 / 45+40+40 / 1 lot.

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APG RR002414CS2039

TEST GROUP B – ACCELERATED LIFETIME SIMULATION TEST

Tracecode: Tracecode:
Q100
Q100 Test Testing GK3100AV GK330A0
AEC# Test sample s./ Note
reference conditions temperature
lots
Fails / Parts / Lot Fails / Parts/ Lot
HTOL
Not done
High Room
JESD22 Tj=150°C (performed on
B1 Temperature Hot 77 / 3
A108 1000h other test
Operating Cold
vehicles).
Life
Not done
ELFR
AEC Q100 Tj=125°C Room (performed on
B2 Early Life 800 / 3 - -
008 24h Hot other test
Failure Rate
vehicles).
EDR
Endurance Not applicable
AEC Q100
B3 Data (no memory
005
Retention inside)
Op. Life

TEST GROUP C – PACKAGE ASSEMBLY INTEGRITY TESTS

WBS Done in assy
AEC Q100 30 bonds
C1 Wire Bond Passed Passed plant on virgin
001 5 devices
Shear samples.
Done in assy
plant on virgin
WBP MIL-STD
30 bonds samples.
C2 Wire Bond 883 – Passed Passed
5 devices Done after TC.
Pull 2011
Done also after
HTSL.
Done in assy
SD JESD22
C3 15 / 1 Passed Passed plant on virgin
Solderability B102
samples.
PD Done in assy
JESD22
C4 Physical 10 / 3 Passed Passed plant on virgin
B100/B108
Dimension samples.

SBS 5 balls
AEC Q100 Not applicable.
C5 Solder Ball 10 - -
010 For BGA only
Shear devices

LI No lead Not required

JESD22
C6 Lead breakage or 5/1 - - for surface
B105
Integrity finish cracks mount devices.

TEST GROUP D – DIE FABBRICATION RELIABILITY TEST

Q100
Q100 Test Testing Results
AEC# Test sample s./ Note
reference conditions temperature Fails / Parts / Lot
lots
EM
D1 Electro- BCD3 process qual.
migration
TDDB
Time
D2 BCD3 process qual.
Dependent
Dielectric BV
HCI
D3 Hot Carrier BCD3 process qual.
Injection
NBTI
Negative
D4 Bias BCD3 process qual.
Temperature
Instability
SM
D5 Stress BCD3 process qual.
Migration

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APG RR002414CS2039

TEST GROUP E – ELECTRICAL VERIFICATION TESTS

Tracecode: Tracecode:
GK3100AV GK330A0
Q100 Test Testing Q100
AEC # Test Note
reference conditions temperature sample s./ lots
Results Results
Fails/ Parts/ Lot Fails / Parts/ Lot

E1 TEST All units All units All units

ESD MM / HBM
AEC Q100 Room 3 x Vlevel Not
E2 Electrostatic
002/3 Hot x pin comb. / 2 required
Discharge
±500V
ESD CDM All pins
AEC Q100 Room Not
E3 Electrostatic 3 x Vlevel / 2
011 Hot required
Discharge ±750V
Corner pins
Current Injection
Power supply
LU AEC Q100 sequence Room Not
E4 12 / 2
Latch-up 004 Overvoltage on Hot required
power supply
Room / Hot
AEC Q100 Electrical
E5 ED
009 Distribution
AEC Q100 Not
E6 FG Fault Grading
007 applicable
Characterization
E7 CHAR AEC Q003
(Rm/Hot/Cold)
GL
Electro-Thermally
Electrothermally AEC Q100 Room Not
E8 Induced Gate 6/1 -
Induced Gate 006 Hot mandatory
Leakage: (Rm)
Leakage
Electromagnetic
Compatibility
EMC
SAE (Radiated Not
E9 Electromagnetic - -
J1752/3 Emissions): applicable
Compatibility
<40dBuV at
10kHz-1MHz
SC AEC Q100 Short Circuit Not
E10 - - -
Short Circuit 012 Characterization applicable
JESD89-1
Soft Error Not
E11 SER JESD89-2 - - -
Rate applicable
JESD89-3

TEST GROUP F – DEFECT SCREENING TEST

Q100 Test Testing Q100
AEC # Test Results Note
reference conditions temperature sample s./ lots
PAT
AEC
F1 Process Average See AEC Q001
Q001
Testing
SBA
AEC
F2 Statistical Bin See AEC Q002
Q002
Yield Analysis

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APG RR002414CS2039

TEST GROUP G – CAVITY PACKAGE INTEGRITY TESTS

Q100
Q100 Test Testing Results
AEC # Test sample s./ Note
reference conditions temperature Fails / Parts/ Lot
lots
JEDEC
MS Not required for
JESD22
G1 Mechanical - surface mount
B104
Shock devices.
VFV JEDEC
Not required for
Variable JESD22
G2 - surface mount
Frequency B103
devices.
Vibration
MIL-STD
CA Not required for
883
G3 Constant - surface mount
Method
Acceleration devices.
2001
MIL-STD
GFL Not required for
883
G4 Gross/Fine - surface mount
Method
Leak devices.
1014

Not required for

DROP
G5 - - surface mount
Package Drop
devices.
MIL-STD
Not required for
LT 883
G6 - surface mount
Lid Torque Method
devices.
2024
MIL-STD
Not required for
DS 883
G7 - surface mount
Die Shear Method
devices.
2019
MIL-STD
IWV Not required for
883
G8 Internal Water - surface mount
Method
Vapor devices.
1018

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APG RR002414CS2039

3.3 Test description

Test name Description Purpose
The device is submitted to a typical As stand-alone test: to investigate the level of moisture
temperature profile used for surface sensitivity.
PC (JL3) mounting, after a controlled As preconditioning before other reliability tests: to verify that
Preconditioning moisture absorption. the surface mounting stress does not impact on the
(solder simulation) subsequent reliability performance. The typical failure modes
are "pop corn" effect and delamination.

The device is submitted to cycled To investigate failure modes related to the thermo-mechanical
temperature excursions, between a stress induced by the different thermal expansion of the
TC hot and a cold chamber in air. materials interacting in the die-package system. Typical failure
modes are linked to metal displacement, dielectric cracking,
Temperature Cycling molding compound delamination, wire-bonds failures, die-
attach layer degradation.

The unbiased device is stored in a This test is performed to point out critical water entry paths with
AC saturated steam, at fixed and consequent corrosion effects affecting die or package
controlled conditions of pressure materials, related to chemical contamination.
Autoclave and temperature.
The unbiased device is submitted to This test is performed to point out critical water entry paths with
cycled temperature excursions, consequent corrosion effects affecting die or package
ES between a hot and a cold chamber materials, related to chemical contamination.
Enviroment sequence in air and then is stored in a To emphatize the failure modes linked to water entry paths, the
saturated steam, at fixed and parts have been preceeded by JL3+TC200cy
(JL3+TC200cy+AC96h) controlled conditions of pressure
and temperature.
The device is stored in unbiased To investigate the failure mechanisms activated by high
condition at the max. temperature temperature, typically wire-bonds solder joint ageing,
HTSL allowed by the package materials, metal stress-voiding.
High Temperature Storage Life sometimes higher than the max.
operative temperature.

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APG RR002414CS2039

4 TEST GLOSSARY

Test name Description

HTSL High Temperature Storage Life test
TC Temperature Cycling test
AC Autoclave
ES Environmental Sequence
PC (JL3) Preconditioning (Jedec Level 3)
WBP Wire Bond Pull
WBS Wire Ball Shear

5 REVISION HISTORY

Version Date Pages Author

1.0 April 11th 2014 15 [Link]

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 Public Products List
®

PCN Title : SO8 Package: Assembly site transfer from ST Muar to ST Shenzhen
PCN Reference : APG-PTS/14/8446
PCN Created on : 12-MAY-2014

Subject : Public Products List

Dear Customer,

Please find below the Standard Public Products List impacted by the change:

ST COMMERCIAL PRODUCT

E-L9637D E-L9637D013TR L4979D

L4979D013TR L4988D L4988DTR
L4989D013TR L4993D L4993DTR
L5150CS L5150CSTR L9613B
L9613B013TR L9616 L9820D
L9820D013TR

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