TIP140, TIP141, TIP142,

(NPN); TIP145, TIP146,

TIP147, (PNP)
TIP141, TIP142, TIP146, and TIP147 are Preferred Devices

Darlington Complementary
Silicon Power Transistors
Designed for general−purpose amplifier and low frequency
switching applications.
10 AMPERE
Features DARLINGTON
• High DC Current Gain − COMPLEMENTARY SILICON
Min hFE = 1000 @ IC POWER TRANSISTORS
= 5.0 A, VCE = 4 V 60−100 VOLTS, 125 WATTS
• Collector−Emitter Sustaining Voltage − @ 30 mA
VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145
= 80 Vdc (Min) − TIP141, TIP146
= 100 Vdc (Min) − TIP142, TIP147
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• Pb−Free Packages are Available*

SOT−93 (TO−218)
MAXIMUM RATINGS CASE 340D
TIP140 TIP141 TIP142 STYLE 1
Rating Symbol TIP145 TIP146 TIP147 Unit
Collector − Emitter Voltage VCEO 60 80 100 Vdc
Collector − Base Voltage VCB 60 80 100 Vdc
Emitter − Base Voltage VEB 5.0 Vdc MARKING DIAGRAM
Collector Current IC Adc
− Continuous 10
− Peak (Note 1) 15

Base Current − Continuous IB 0.5 Adc

Total Power Dissipation PD 125 W AYWWG
@ TC = 25_C TIP14x
Operating and Storage TJ, Tstg −65 to +150 _C
Junction Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, RqJC 1.0 °C/W A = Assembly Location
Junction−to−Case Y = Year
WW = Work Week
Thermal Resistance, RqJA 35.7 °C/W TIP14x = Device Code
Junction−to−Ambient
x = 0, 1, 2, 5, 6, or 7
Maximum ratings are those values beyond which device damage can occur. G = Pb−Free Package
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ORDERING INFORMATION
1. 5 ms, v 10% Duty Cycle. See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please Preferred devices are recommended choices for future use
download the ON Semiconductor Soldering and Mounting Techniques and best overall value.
Reference Manual, SOLDERRM/D.

1
 TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

DARLINGTON SCHEMATICS

NPN COLLECTOR PNP COLLECTOR

TIP140 TIP145
TIP141 TIP146
TIP142 TIP147

BASE BASE

≈ 8.0 k ≈ 40 ≈ 8.0 k ≈ 40

EMITTER EMITTER

ORDERING INFORMATION
Device Package Shipping
TIP140 SOT−93 (TO−218) 30 Units / Rail
TIP140G SOT−93 (TO−218) 30 Units / Rail
(Pb−Free)

TIP141 SOT−93 (TO−218) 30 Units / Rail

TIP141G SOT−93 (TO−218) 30 Units / Rail
(Pb−Free)
TIP142 SOT−93 (TO−218) 30 Units / Rail
TIP142G SOT−93 (TO−218) 30 Units / Rail
(Pb−Free)

TIP145 SOT−93 (TO−218) 30 Units / Rail

TIP145G SOT−93 (TO−218) 30 Units / Rail
(Pb−Free)

TIP146 SOT−93 (TO−218) 30 Units / Rail

TIP146G SOT−93 (TO−218) 30 Units / Rail
(Pb−Free)

TIP147 SOT−93 (TO−218) 30 Units / Rail

TIP147G SOT−93 (TO−218) 30 Units / Rail
(Pb−Free)

2
 TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Typ Max Unit

ÎÎÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector−Emitter Sustaining Voltage (Note 2) VCEO(sus) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
(IC = 30 mA, IB = 0) TIP140, TIP145 60 − −
TIP141, TIP146

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
80 − −
TIP142, TIP147 100 − −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Collector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
(VCE = 30 Vdc, IB = 0) ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ
TIP140, TIP145
ICEO
− − 2.0
mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎ
(VCE = 40 Vdc, IB = 0) TIP141, TIP146 − − 2.0
(VCE = 50 Vdc, IB = 0) TIP142, TIP147 − − 2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Collector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
(VCB = 60 V, IE = 0) ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ TIP140, TIP145
ICBO
− − 1.0
mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎ
(VCB = 80 V, IE = 0) TIP141, TIP146 − − 1.0
(VCB = 100 V, IE = 0) TIP142, TIP147 − − 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Emitter Cutoff Current (VBE = 5.0 V) IEBO − − 20 mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
(IC = 5.0 A, VCE = 4.0 V)

ÎÎÎ
(IC = 10 A, VCE = 4.0 V)
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
1000
500
−
−
−
−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
(IC = 5.0 A, IB = 10 mA) − − 2.0
(IC = 10 A, IB = 40 mA) − − 3.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Base−Emitter Saturation Voltage VBE(sat) − − 3.5 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
(IC = 10 A, IB = 40 mA)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Base−Emitter On Voltage VBE(on) − − 3.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
(IC = 10 A, VCE = 4.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Resistive Load (See Figure 1)
ms

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Delay Time td − 0.15 −
(VCC = 30 V, IC = 5.0 A, ms

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Rise Time tr − 0.55 −
IB = 20 mA, Duty Cycle v 2.0%,
ms

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
Storage Time IB1 = IB2, RC & RB Varied, TJ = 25_C) ts − 2.5 −
Fall Time tf − 2.5 − ms
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

10
VCC PNP
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS −30 V
5.0 NPN
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA RC ts
MSD6100 USED BELOW IB ≈ 100 mA SCOPE
TUT 2.0
t, TIME (s)

V2 RB tf
μ

approx
+12 V 1.0
D1 ≈ 8.0 k
51 ≈ 40 tr
0
0.5
V1
appox. +4.0 V VCC = 30 V
td @ VBE(off) = 0
−8.0 V 25 ms 0.2 IC/IB = 250
for td and tr, D1 is disconnected
and V2 = 0
IB1 = IB2
tr, tf ≤ 10 ns TJ = 25°C
DUTY CYCLE = 1.0% 0.1
0.2 0.5 1.0 3.0 5.0 10 20
For NPN test circuit reverse diode and voltage polarities.
IC, COLLECTOR CURRENT (AMP)

Figure 1. Switching Times Test Circuit Figure 2. Switching Times

3
 TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

PACKAGE DIMENSIONS

SOT−93 (TO−218)
CASE 340D−02
ISSUE E

C NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
B Q E Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.

MILLIMETERS INCHES
U 4 DIM MIN MAX MIN MAX
A −−− 20.35 −−− 0.801
A B 14.70 15.20 0.579 0.598
S L C 4.70 4.90 0.185 0.193
D 1.10 1.30 0.043 0.051
1 2 3 E 1.17 1.37 0.046 0.054
K G 5.40 5.55 0.213 0.219
H 2.00 3.00 0.079 0.118
J 0.50 0.78 0.020 0.031
K 31.00 REF 1.220 REF
L −−− 16.20 −−− 0.638
Q 4.00 4.10 0.158 0.161
S 17.80 18.20 0.701 0.717
U 4.00 REF 0.157 REF
D J V 1.75 REF 0.069
H STYLE 1:
V PIN 1. BASE
2. COLLECTOR
G 3. EMITTER
4. COLLECTOR