DONGGUAN NANJING ELECTRONICS LTD.

TO – 92
KTA1271 TRANSISTOR (PNP)
[Link]

FEATURES [Link]
z High DC Current Gain
[Link]
z Complementary to KTC3203

0 Equivalent Circuit

0  .7$ 'HYLFHFRGH
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.7$ 72 %XON 1000pcs/Bag

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 72 Tape 2000pcs/Box


   

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#$%&  Collector-Base Voltage -35 V
#$'&  Collector-Emitter Voltage -30 V
#'%&  Emitter-Base Voltage -5 V
$  Collector Current -Continuous -800 mA
"(  Collector Power Dissipation 625 mW
 ș +  Thermal Resistance I rom Junction Wo Ambient
  /W

TJ, *  Operation Junction and Storage Temperature Range -55 a  

Dongguan Nanjing Electronics Ltd. 1/5 [Link]

'5'$ $5$6$ ' $

Ta =25  unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= -0.1mA ,IE=0 -35 V
Collector-emitter breakdown voltage V(BR) CEO IC=-10mA,IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA,IC=0 -5 V
Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 A
Collector cut-off current ICEO VCE=-25V,IB=0 -0.2 A
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 A
hFE(1) VCE=-1V, IC=-100mA 100 320
DC current gain
hFE(2) VCE=-1V, IC=-700mA 35
Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-20mA -0.7 V
Base-emitter voltage VBE VCE=-1V, IC=-10mA -0.8 V
Transition frequency fT VCE=-5V,IC=-10mA 120 MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 19 pF

CLASSIFICATION OF hFE(1)
RANK O Y
RANGE 100-200 160-320

Dongguan Nanjing Electronics Ltd. 2/5 [Link]

Typical Characteristics

Static Characteristic hFE —— IC

-0.30 1000

COMMON
EMITTER
-0.25 Ta=25ć Ta=100ć
COLLECTOR CURRENT IC (A)

-1mA

DC CURRENT GAIN hFE

-0.9mA
-0.20
-0.8mA Ta=25ć
-0.7mA
-0.15 100
-0.6mA

-0.5mA
-0.10
-0.4mA

-0.3mA
-0.05
-0.2mA
COMMON EMITTER
IB=-0.1mA VCE=-1V
-0.00 10
-0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -1 -10 -100 -800
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VCEsat —— IC VBEsat —— IC
-1000 -1400

-1300

-1200
COLLECTOR-EMITTER SATURATION

BASE-EMITTER SATURATION
-1100

VOLTAGE VBEsat (mV)

VOLTAGE VCEsat (mV)

-1000
Ta=100ć
-900
Ta=25ć
-100 -800

-700
Ta=25ć
-600

-500 Ta=100ć

-400

-300
ȕ=25 ȕ=25
-10 -200
-1 -10 -100 -800 -1 -10 -100 -800

COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

IC —— VBE Cob/ Cib —— VCB/ VEB

-800 1000
COMMON EMITTER f=1MHz
VCE=-1V IE=0/IC=0
Ta=25ć
-100
COLLCETOR CURRENT IC (mA)

CAPACITANCE C (pF)

Cib
100
a 10
0ć

-10
T=

a 25
T=

Cob
10

-1

-0.1 1
-200 -400 -600 -800 -1000 -1200 -0.1 -1 -10 -30

BASE-EMMITER VOLTAGE VBE (mV) REVERSE VOLTAGE V (V)

PC —— Ta
1000

875
COLLECTOR POWER DISSIPATION

750

625
PC (mW)

500

375

250

125

0
0 25 50 75 100 125 150

AMBIENT TEMPERATURE Ta (ć )

Dongguan Nanjing Electronics Ltd. 3/5 [Link]

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A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4. 4.700
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
 1.600 0.063
h 0.000 0.380 0.000 0.015

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Dongguan Nanjing Electronics Ltd. 4/5 [Link]

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Dongguan Nanjing Electronics Ltd. 5/5 [Link]