Section A (Each question has 1 mark)
1. The majority charge carriers in P-type semiconductor are
(a) Electrons (b) Protons
(c) Holes (d) Neutrons
2. A P-type semiconductor can be obtained by adding
(a) Arsenic to pure silicon
(b) Gallium to pure silicon
(c) Antimony to pure germanium
(d) Phosphorous to pure germanium
14 3 12 3
3. In a semiconductor, the concentration of electrons is 8×10 /cm and that of the holes is 5×10 cm . The semiconductor is
(a) P-type (b) N-type
(c) Intrinsic (d) PNP-type
4. In P-type semiconductor, there is (a) An excess of one electron
(b) Absence of one electron
(c) A missing atom
(d) A donar level
(a) Silicon is a semiconductor. If a small amount of As is added to it, then its electrical conductivity Decreases (b)
Increases
(c) Remains unchanged (d) Becomes zero
5. When the electrical conductivity of a semi- conductor is due to the breaking of its covalent bonds, then the semiconductor is said to be
(a) Donar (b) Acceptor
(c) Intrinsic (d) Extrinsic
6. A piece of copper and the other of germanium are cooled from the room temperature to 80 K, then which of the following would be a
correct statement
(a) Resistance of each increases
(b) Resistance of each decreases
(c) Resistance of copper increases while that of germanium decreases
(d) Resistance of copper decreases while that of germanium increases
7. To obtain P-type Si semiconductor, we need to dope pure Si with (a) Aluminium (b) Phosphorous
(c) Oxygen (d) Germanium
8. Electrical conductivity of a semiconductor
(a) Decreases with the rise in its temperature
(b) Increases with the rise in its temperature
(c) Does not change with the rise in its temperature
(d) First increases and then decreases with the rise in its temperature
9. In an insulator, the forbidden energy gap between the valence band and conduction band is of the order of
(a)
1 MeV (b)
0.1 MeV
(c)
1 eV (d)
5 eV
Section B (Each question has 2 mark)
11. When light travels from a rarer to a denser medium, the speed decreases. Does this decrease in speed imply a decrease in the energy carried by
the light wave? Justify your answer.
12. Write the definition of coherent sources?
13. Write two failures of Huygen’s secondary wavelets principle.
14. Define polarization of light.
15. Why do we make extrinsic semiconductor.
Section C (Each question has 4 mark)
16. With the help of a circuit diagram explain the working of a p-n junction diode as a full-wave rectifier. Also draw its input and output
waveforms.
17. Explain the formation of potential barrier and depletion region in a p-n junction diode. What is effect of applying forward bias on the width of
depletion region?
18. Using Huygens' geometrical construction of wavefronts, show how a plane wave gets reflected from a surface? Hence, verify laws of
reflection.
19. In Young's experiment, the width of the fringes obtained with light of wavelength 6000 Å is 2.0 mm Calculate the fringe width if the entire
apparatus is immersed in a liquid medium of refractive index 1.33.
20. Two polaroids P and P₂ are placed with their pass axes perpendicular to each other. Unpolarised light of intensity I is incident on P ₁. A third
polaroid P, is kept in between P₁ and P₂ such that its pass axis makes an angle of 60° with that of P ₁. Determine the intensity of light transmitted
through P₁, P₂ and P3.
Section D(Each question has 5 mark)
21. What is rectifier? Explain full wave rectifier.
22. Explain the experimental arrangement of YDSE.