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SOT-23 Plastic-Encapsulate Transistors: AV9012LT1

This document provides specifications for an SOT-23 plastic-encapsulated transistor including its electrical characteristics, classification, device marking, and features such as power dissipation, current and voltage ratings. The transistor has a DC current gain of 120-400 and an operating temperature range of -55°C to +150°C.

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mohamad.ali232224
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12 views1 page

SOT-23 Plastic-Encapsulate Transistors: AV9012LT1

This document provides specifications for an SOT-23 plastic-encapsulated transistor including its electrical characteristics, classification, device marking, and features such as power dissipation, current and voltage ratings. The transistor has a DC current gain of 120-400 and an operating temperature range of -55°C to +150°C.

Uploaded by

mohamad.ali232224
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

@vic

SOT-23 Plastic-Encapsulate Transistors

SOT-23
AV9012LT1 TRANSISTOR (PNP)
1. BASE
2. EMITTER
3. COLLECTOR
FEATURES

1. 0
Power dissipation
2. 4
PCM: 0.3 W (Tamb=25℃)
1. 3

Collector current

0. 95
ICM: -0.5 A

2. 9
1. 9
Collector-base voltage

0. 4
V(BR)CBO: -40 V

0. 95
Operating and storage junction temperature range Unit: mm

TJ, Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= -100µA, IE=0 -40 V

Collector-emitter breakdown voltage V(BR)CEO Ic= -1mA, IB=0 -25 V

Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V

Collector cut-off current ICBO VCB=-40 V, IE=0 -0.1 µA

Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 µA

Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 µA

hFE(1) VCE=-1V, IC= -50mA 120 400


DC current gain
hFE(2) VCE=-1V, IC=-500mA 40

Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50mA -0.6 V

Base-emitter saturation voltage VBE(sat) IC=-500 mA, IB= -50mA -1.2 V

VCE=-6V, IC= -20mA


Transition frequency fT 150 MHz
f=30MHz
CLASSIFICATION OF hFE(1)
Rank L H J
Range 120-200 200-350 300-400

DEVICE MARKING S9012LT1=2T1

Copyright @vic Electronics Corp. Website [Link]

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