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SS8050 NPN Transistor Specifications

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0% found this document useful (0 votes)
7 views4 pages

SS8050 NPN Transistor Specifications

Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

JC(T SOT-323 Plastic-Encapsulate Transistors

SS8050 TRANSISTOR (NPN)


SOT-323
FEATURES
Complimentary to SS8550 1. BASE
2. EMITTER
MARKING: Y1
3. COLLECTOR

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 1.5 A
PC Collector Power Dissipation 250 mW
RΘJA Thermal Resistance From Junction To Ambient 500 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V

Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V

Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA

Collector cut-off current ICEO VCE=20V, IE=0 0.1 μA

Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA

hFE(1) VCE=1V, IC= 100mA 120 400


DC current gain
hFE(2) VCE=1V, IC= 800mA 40

Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V

Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V


VCE=10V, IC= 50mA,
Transition frequency fT 100 MHz
f=30MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 15 pF

CLASSIFICATION OF hFE(1)
Rank L H J
Range 120-200 200-350 300-400

[Link] 1 A,Jun,2014
B,Sep,2014
Typical Characteristics
Static Characteristic hFE —— IC
0.30 1000
1000uA
COMMON
900uA EMITTER
Ta=25℃ Ta=100℃
0.25
800uA
(A)

hFE
700uA
IC

0.20
Ta=25℃

DC CURRENT GAIN
COLLECTOR CURRENT

600uA

0.15 500uA 100

0.10 400uA

300uA
0.05
200uA

IB=100uA VCE=1V
0.00 10
0.0 0.5 1.0 1.5 2.0 1 10 100 1000 1500

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VCEsat —— IC VBEsat —— IC
1000 2000
COLLECTOR-EMITTER SATURATION

BASE-EMITTER SATURATION 1000


Ta=25℃
VOLTAGE VBEsat (mV)
VOLTAGE VCEsat (mV)

Ta=100℃
100

Ta=100℃
Ta=25℃

10

β=10 β=10
1 100
1 10 100 1000 1500 1 10 100 1000 1500
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

VBE —— IC Cob/ Cib —— VCB/ VEB


1500 200
1000 f=1MHz
IE=0/IC=0
100
Ta=25℃
Cib
(pF)
(mA)

Ta=100℃
100
C
IC

Cob
CAPACITANCE
COLLCETOR CURRENT

Ta=25℃
10

10

VCE=1V
1 1
200 300 400 500 600 700 800 900 1000 0.1 1 10 20
BASE-EMMITER VOLTAGE VBE (mV) REVERSE VOLTAGE V (V)

fT —— IC PC —— Ta
1000 300
(MHz)

250
COLLECTOR POWER DISSIPATION
fT

100 200
PC (mW)
TRANSITION FREQUENCY

150

10 100

50
VCE=10V
Ta=25℃
1 0
1 10 100 0 25 50 75 100 125 150

COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta (℃ )

[Link] 2 A,Jun,2014
B,Sep,2014
SOT-323 Package Outline Dimensions

Dimensions In Millimeters Dimensions In Inches


Symbol
Min Max Min Max
A 0.900 1.100 0.035 0.043
A1 0.000 0.100 0.000 0.004
A2 0.900 1.000 0.035 0.039
b 0.200 0.400 0.008 0.016
c 0.080 0.150 0.003 0.006
D 2.000 2.200 0.079 0.087
E 1.150 1.350 0.045 0.053
E1 2.150 2.450 0.085 0.096
e 0.650 TYP 0.026 TYP
e1 1.200 1.400 0.047 0.055
L 0.525 REF 0.021 REF
L1 0.260 0.460 0.010 0.018
θ 0° 8° 0° 8°

SOT-323 Suggested Pad Layout

[Link] 3 B,Sep,2014
A,Jun,2014
SOT-323 Tape and Reel

[Link] 4 B,Sep,2014
A,Jun,2014

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