ED Lab Experiment Manual 1
American International University- Bangladesh
Faculty of Engineering (FE)
Department of Electrical and Electronic Engineering (EEE)
EEE 2104: Electronic Devices Lab
Title of the Experiment: Determination of Characteristic Curve of a Diode.
Objectives:
The objectives of this experiment are to
1. Become familiar with semiconductor diodes.
2. Determine the characteristic curve of a semiconductor diode.
3. Find the different parameter values of a semiconductor diode.
Theory:
Diode Structure
The semiconductor diode is created by simply joining an n-type and a p-type material together. It is a pn junction
as shown in Figure 1. As indicated, the pn junction consists of p-type semiconductor material in contact with n-
type semiconductor material.
Figure 1: pn junction diode structure
A variety of semiconductor materials can be used to form pn junctions like silicon, germanium, gallium arsenide,
etc. However, we will concentrate on silicon, as this is the most widely used material in microelectronics. In
actual practice, both the p and n regions are part of the same silicon crystal. The pn junction is formed by creating
regions of different doping (p and n regions) within a single piece of silicon. The material is doped by bringing
in additional atoms (impurities). The impurities can be either donors or acceptors atoms. The words acceptor and
donor can be associated with donating and accepting electrons.
PN Junction
To understand how a pn junction is formed we will start by imagining two separate pieces of semiconductor, one
n-type and the other p-type as shown in Figure 2 (a). Now, we bring the two pieces together to make one piece of
semiconductor. This results in the formation of a pn junction (Figure 2 (b)).
Figure 2: a) separate pieces of p and n materials, b) pn junction.
© Copyright by the Department of EEE, American International University-Bangladesh (AIUB) Page 1 of 6
ED Lab Experiment Manual 1
Forward/Reverse-Bias Characteristics
If a negative voltage is applied to the pn junction, the diode is reverse-biased. In response, free holes and electrons
are pulled towards the end of the crystal and away from the junction. The result is that all available carriers are
attracted away from the junction, and the depletion region is extended. There is no current flow through under
such conditions. If the applied voltage is positive, the diode operates in forward bias. This has the effect of
shrinking the depletion region. Now, electrons in the p-type end are attracted to the positive applied voltage, while
holes in the n-type end are attracted to the negative applied voltage.
Diode Characteristics
In the forward bias condition, a cut-in voltage must be overcome for the diode to start conduction. In silicon, this
voltage is about 0.6-0.7 V. In reverse-bias conditions, the current is limited to IS (reverse saturation current). For
higher values of reverse voltages, the junction breaks down. Figure 3 shows the diode I-V characteristics.
Figure 3: Diode IV Characteristics.
Methodology:
The diode will be forward biased from a DC voltage source, starting from 0 V to 1 V in a step of 0.1 V and then
1 V to 10 V in a step of 1 V. The diode voltage and resistor voltage drops will be measured using a multimeter.
If the resistor voltage drop is divided by the resistance of that resistor, then we will get the diode current. Then, a
forward-biased diode curve will be plotted. From this curve, the dynamic resistance of the diode can be obtained.
Equations Required:
𝑞𝑉𝑑
Thediode forward current, 𝐼𝑑 = 𝐼𝑠 (1 − 𝑒 − 𝑘𝑇 )
1 𝑑𝐼𝑑 ∆𝐼𝑑
The slope of the forward curve gives the diode conductance, 𝑔𝑑 = = 𝑡𝑎𝑛𝜃 = =
𝑟𝑑 𝑑𝑉𝑑 ∆𝑉𝑑
𝑑𝑉𝑑 ∆𝑉𝑑
The diode’s dynamic resistance, 𝑟𝑑 = 𝑑𝐼𝑑
= ∆𝐼𝑑
𝑉𝑑
The diode’s static resistance, 𝑟𝑠 = 𝐼𝑑
(for any given point)
Pre-Lab Homework:
Students will be provided with the upcoming lab manuals, and they will be asked to prepare the theoretical
(operations/working principle) information on the topic from the textbook.
Besides, they must implement the circuit (as given in Figure 4) using a MultiSIM simulator. Some other diodes
can also be used, such as IN914, IN4001, or IN4007. Measure the values of different parameters and fill up the
table (Table 1) using the simulation tool.
© Copyright by the Department of EEE, American International University-Bangladesh (AIUB) Page 2 of 6
ED Lab Experiment Manual 1
Apparatus:
SL# Apparatus Quantity
1 Diode 1
2 Resistance (1 k) 1
3 Project Board 1
4 DC Power Supply 1
5 Multimeter 1
Precaution!
The following is a list of some of the special safety precautions that should be taken into consideration when
working with diodes:
1. Never remove or insert a diode into a circuit with voltage applied.
2. When testing a diode, ensure that the test voltage does not exceed the diode’s-
a. Maximum allowable voltage.
b. Ensure a replacement diode into a circuit is in the correct direction.
Experimental Procedures:
1. Measure the actual value of the 1 k resistor.
2. Connect the circuit as shown in Figure 4.
Figure 4: Circuit diagram for determining diode characteristics.
3. Turn on the DC power supply with the voltage control nob at 0 V.
4. Rotate the voltage control nob from 0 V to 10 V gradually with a step of 0.1 V and 1 V as shown in Table 1.
5. Measure the voltage across the two terminals of the supply voltage, diode, and resistor for all cases.
6. Record the measured data in Table 1.
7. Turn off the Power Supply.
8. Calculate the drain current (Id) and fill up Table 1.
9. Plot the VD - Id characteristic curve for the diode.
10. Determine the knee voltage and static and dynamic resistance of the diode.
© Copyright by the Department of EEE, American International University-Bangladesh (AIUB) Page 3 of 6
ED Lab Experiment Manual 1
Table 1 Data for the VD - Id Curve
Source Voltage, Es (V) Diode Voltage, VD (V) Resistor Voltage, VR (V) Diode Current, Id (mA)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
12.0
Questions:
1. Show the difference between your simulated and measured values. Comment on the results.
2. Plot the VD - Id characteristic curve for the diode and comment on the graph.
3. Compute the knee voltage and dynamic and static resistances of the diode from the plotted graph.
4. What will happen if the polarity of the supply voltage is reversed in the case of using a diode with a
PIV of 4.8 V?
5. Discuss the overall aspects of the experiment. Did your results match the expected ones? If not, explain.
References:
[1] Robert L. Boylestad, Louis Nashelsky, Electronic Devices and Circuit Theory, 9th Edition, 2007-2008
[2] Adel S. Sedra, Kenneth C. Smith, Microelectronic Circuits, Saunders College Publishing, 3rd ed., ISBN: 0-03-
051648-X, 1991.
[3] American International University–Bangladesh (AIUB) Electronic Devices Lab Manual.
[4] David J. Comer, Donald T. Comer, Fundamentals of Electronic Circuit Design, John Wiley & Sons Canada, Ltd.,
ISBN: 0471410160, 2002.
[5] Resistor values: [Link] accessed on 20 September 2023.
List the references that you have used to answer the “Discussion” section.
© Copyright by the Department of EEE, American International University-Bangladesh (AIUB) Page 4 of 6
ED Lab Experiment Manual 1
Appendix A:
Resistance Color Code:
XY×10Z ± E of XY×10Z
= 33×101 ± 5% of 330
= 330 ± 16.5
= 346.5 or 313.5
XY×10Z ± E of XY×10Z
= 22×102 ± 5% of 2200
= 2200 ± 110
= 2310 or 2090
XY×10Z ± E of XY×10Z
= 47×102 ± 10% of 4700
= 4700 ± 470
= 5170 or 4230
= 5.17 or 4.23 k
Standard Resistor Values Table (Commercially Available):
The following are the standard resistor values table available in carbon film with 5% tolerance:
Resistances in Ohm range:
1Ω 10Ω 100Ω
1.1Ω 11Ω 110Ω
© Copyright by the Department of EEE, American International University-Bangladesh (AIUB) Page 5 of 6
ED Lab Experiment Manual 1
1.2Ω 12Ω 120Ω
1.5Ω 15Ω 150Ω
1.8Ω 18Ω 180Ω
2Ω 20Ω 200Ω
2.2Ω 22Ω 220Ω
2.7Ω 27Ω 270Ω
3.3Ω 33Ω 330Ω
4.7Ω 47Ω 470Ω
5.6Ω 56Ω 560Ω
6.8Ω 68Ω 680Ω
7.5Ω 75Ω 750Ω
8.2Ω 82Ω 820Ω
9.1Ω 91Ω 910Ω
Resistances in kilo Ohm range:
1kΩ 10kΩ 100kΩ
1.1kΩ 11kΩ 110kΩ
1.2kΩ 12kΩ 120kΩ
1.5kΩ 15kΩ 150kΩ
1.8kΩ 18kΩ 180kΩ
2kΩ 20kΩ 200kΩ
2.2kΩ 22kΩ 220kΩ
2.7kΩ 27kΩ 270kΩ
3.3kΩ 33kΩ 330kΩ
3.6kΩ 36kΩ 360kΩ
3.9kΩ 39kΩ 390kΩ
4.7kΩ 47kΩ 470kΩ
5.6kΩ 56kΩ 560kΩ
6.8kΩ 68kΩ 680kΩ
7.5kΩ 75kΩ 750kΩ
8.2kΩ 82kΩ 820kΩ
9.1kΩ 91kΩ 910kΩ
Resistances in Mega Ohm range:
1MΩ 3MΩ 9.1MΩ
1.1MΩ 3.3MΩ 10MΩ
1.2MΩ 3.6MΩ 12MΩ
1.5MΩ 4.3MΩ 15MΩ
1.8MΩ 5.6MΩ 18MΩ
2MΩ 6.2MΩ 20MΩ
2.2MΩ 6.8MΩ 22MΩ
2.4MΩ 7.5MΩ
2.7MΩ 8.2MΩ
© Copyright by the Department of EEE, American International University-Bangladesh (AIUB) Page 6 of 6