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U.S.A. FAX: (973) 376-8960
NPN - MJ15022, MJ15024*
*MJ15024 is a Preferred Device
Silicon Power Transistors
The MJ15022 and MJ15024 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear
applications.
Features
• High Safe Operating Area (100% Tested) - 2 A @ 80 V
• High DC Current Gain - h FE = 15 (Min) @ Ic = 8 Adc
16 AMPERES
SILICON POWER TRANSISTORS
200 - 250 VOLTS, 250 WATTS
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO Vdc
MJ 15022 200
MJ 15024 250
Collector-Base Voltage VCBO Vdc
MJ 15022 350
MJ 15024 400
Emitter-Base Voltage VEBO 5 Vdc (TO-3)
Collector-Emitter Voltage VCEX 400 Vdc
Collector Current - Continuous Ic 16 Adc
- Peak (Note 1) 30
Base Current - Continuous IB 5 Adc
Total Device Dissipation @ Tc = 25"C PD 250 W
Derate above 25°C 1.43 W/"C
Operating and Storage Junction Tj, Ts(g -65 to +200 °C
Temperature Range
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction-to-Case RHJC 0.70 J C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished hy NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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NPN-MJ15022, MJ15024*
ELECTRICAL CHARACTERISTICS (Tc = 25=C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 2) VCEO(SUS)
(lc = lOOmAdc, IB = 0) MJ15022 200 -
MJ 15024 250
Collector Cutoff Current 'CEX (iAdc
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc) MJ 1 5022 - 250
(VCE = 250 Vdc, VBE(0ff) = 1.5 Vdc) MJ15024 250
Collector Cutoff Current 'CEO iiAdc
(VCE = 150 Vdc, IB = 0)
(VCE = 200 vdc, IB = 0)
MJ 15022
MJ1 5024 : 500
500
Emitter Cutoff Current !EBO — 500 |.iAdc
(VCE = 5 Vdc, IB = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased 's/b Adc
(VCE = 50 Vdc, t = 0.5 s (non-repetitive)) 5 -
(VCE = 80 Vdc, t = 0.5 s (non-repetitive)) 2 -
ON CHARACTERISTICS
DC Current Gain HFE -
(lc = 8 Adc, VCE = 4 Vdc) 15 60
(lc = 16 Adc, VCE = 4 Vdc) 5 -
Collector-Emitter Saturation Voltage VcE(sat) Vdc
(lc = 8Adc, IB = 0.8 Adc) - 1.4
(lc = 16 Adc, IB = 3.2 Adc) - 4.0
Base- Emitter On Voltage vBE(on) - 2.2 Vdc
(lc = 8 Adc, VCE = 4 Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product fT 4 — MHz
(lc = 1 Adc, V CE = 10 Vdc, f,est = 1 MHz)
Output Capacitance Cob " 500 PF
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
2. Pulse Test: Pulse Width = 300 us, Duty Cycle < 2%.
100 There are two limitations on the powerhandling ability of
50 a transistor: average junction temperature and second
TC breakdown. Safe operating area curves indicate lc - VCE
1 20
limits of the transistor that must be observed for reliable
^ 10 - *\M
operation; i.e., the transistor must not be subjected to greater
1C, COLLECTOR CURR!
^"l
dissipation than the curves indicate.
v
o
The data of Figure I is based on Tj(pk) = 200°C; TC is
cn
_ - E ONDI NGWIF E TE D }
- T HERU1AL LIM IT/ VTIC N variable depending on conditions. At high case
( 5INGL EPULS E temperatures, thermal limitations will reduce the power that
o
b ECOI>IDBRE W D0\ <VN can be handled to values Ion than the limitations imposed by
—t.
- L MITE D
IpHf
\2 second breakdown.
ro
CD p
\
—••
0.1 0.2 0.5 10 20 50 100 250 500 1k
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active-Region Safe Operating Area
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Datasheets for electronic components.
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