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Circuit Simulation and Analysis Guide

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Shubham Bansal
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10 views37 pages

Circuit Simulation and Analysis Guide

Uploaded by

Shubham Bansal
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Instructions

 Kindly note that given component values are for initial starting
values. You need to tweak these values to get proper simulation
results.
 Use given library files (for 500 nm MOSFET/ BJT/ DIODE) to
run simulations
 Assignment should be done in a group of 3 students.
 Each group needs to prepare a hand written report showing
spice netlist, calculations , simulation results/ graphs,
conclusions properly
 Submission instructions will be provided later
 You may take help to understand usage of LTSPICE simulator
 Copying in any form is not permitted.
 For tsmc 180 lib —use 2.0 V power supply.
 For AMI C5 lib- use 5V power supply
PROBLEM SET-1
1. A schematic of common emitter amplifier (CE) is shown in the figure below.
Obtain the DC Operating point, plot the Bode plot for voltage gain (AV) and current gain
(AI).
Also observe the output waveform for a 1KHz 10mV sine wave as excitation.
Also calculate the input impedance (Rin) and output impedance (Rout) of the amplifier.
a. What is the impact of R2 on AV, AI, Rin and Rout?
b. What is the impact of RE on AV, AI, Rin and Rout?
c. What is the impact of Bias voltage VEB on AV, AI, Rin and Rout?
d. Design the circuit to achieve the target specifications (as per the table) to be achieved by
choosing proper values for Resistors and Bias Voltage.

[Link]. Specification Value


1. Input Resistance in kΩ Last digit of Ist group member
ID + Tut section number.
2. Voltage gain in dB Last two digits of 2nd group
member’s year of admission +
Tut Section number
3. 3 dB Band width in MHz (Sum of last four digits in 3rd
group member ID % 12) + Tut
section number. If obtained
value is less than 10MHz, take
it as 10MHz.
4. BJT Model to be used BC107A
2. (DC Analysis and parametric sweep): For the two port network shown in figure below,
-----obtain the Z-parameters, g parameters and h (hybrid) parameters (at both low(1K Hz) and
high frequency (10M Hz values)
.
----Cross check your results obtained from simulation against hand calculations.
---What is the voltage gain and transconductance gain if a sinusoidal voltage source (at V1)
has a resistance 5k and the load resistance is 1 kohm? Chk the impact with variation in load
resistance

[Link]. Resistor Name Value


1. R1(kΩ) (Last digit of Ist group member ID + 3) multiplied by tut
section no.
2. R2 (kΩ) Product of last two digits of 3rd group member ID + tut
section no.
3. R3 (kΩ) (Sum of last three digits of 2nd group member ID )*Tut
Section no.

If R3 obtained is zero then take it as 12kohm


4. R4 (kΩ) Last two digits of Ist group member year of admission –
Tut section number
PROBLEM SET-2

1. For the MOSFET circuit below, input is sinusoidal signal of amplitude 1V and
frequency 50Hz.
----Find, the DC operating point,
----Plot the frequency response with diff. values of R2
--- Plot the input, output and transfer characteristics and find out gm, gmb, ro
--- draw the small signal equivalent of circuit. (at low and high frequency both)
Assume an overdrive voltage of 0.2V
Use MOSFET 500nm Library file provided.

[Link]. Resistor Name Value


1. R1 (kΩ) (Last digit of 2nd group
member ID + 10)
2. C1 (nF) 0.1*(Last digit of Ist group
member ID + Tut Section
no).
3 R2 (kΩ) Initial value---3rd group
member (Tut section no.
×3)
Q2. For the two port network shown in figure below,
--- obtain the Z-parameters, y parameters and h (hybrid) parameters(at both low and high
frequency values).
----Cross check your results obtained from simulation against hand calculations.
---What should be the value of load connected at Port-2 for maximum power transfer when a
voltage source of 15V is connected at Port-1.
---- what is the impact of variation in value of C1 on V2?

[Link]. Resistor Value


Name
1. R1(kΩ) (Last digit of Ist group member ID + 3) multiplied by tut
section no.
2. R2 (kΩ) Product of last two digits of 3rd group member ID + tut section
no.
3. R3 (kΩ) (Sum of last three digits of 2nd group member ID % 8)*Tut
Section no.

If R3 is found zero take it to be 10kΩ


4. k Last two digits of Ist group member’s year of admission – Tut
section number
PROBLEM SET-3

Q1 A schematic of emitter follower amplifier (CE) is shown in the figure below.


----Determine value of R2 to obtain class A operation . Obtain the DC Operating point, take
RL= 1K
---plot the Bode Magnitude plots for voltage gain (AV) and current gain (AI).
----Also observe the output waveform for a 1KHz 10mV sine wave as excitation.
---Also calculate the input impedance (Rin) and output impedance (Rout) of the amplifier.
a. What is the impact of R2 on AV, AI, Rin and Rout?
b. What is the impact of RE on AV, AI and Rin?
c. What is the impact of Bias voltage VEB on AV, AI and Rin?
d. Design the circuit to achieve the target specifications (as per the table) to be achieved by
choosing proper values for Resistors and Bias Voltage.

[Link]. Specification Value


1. Input Resistance in kΩ 13+Tut section number of Ist group member
2. Current gain in dB (2*Last two digits of 3rd group member year of
[ Find RL values for given spec.] admission) - Tut section number
3. 3 dB Band width in kHz 400+[(Sum of last four digits of 2nd group
member ID )* Tut section number]
4. BJT Model to be used BC107B
2. For the rectifier circuit shown below,
--Plot the transient analysis for a sinusoidal input signal of amplitude 10V and frequency 50Hz
--Find the ripple factor and efficiency from the output waveform.
Diode model to be used: 1SR154-400

[Link]. Resistor Name Value


1. R1 (kΩ) (Last digit of Ist group member ID + 3)
multiplied by r tut section no.

2. C1 (µF) (Last 3 digits of Ist group member ID


*Tut Section no.

NOTE—
--if the capacitance C1 value found is such that 50uF<C1<500uF, take 1/10 of this value.
--If 500uF<C<1000uF take 1/20 of the value and
--if C1> 1000uF, then take 1/50 of the value.

Make inferences as to what capacitance value is suitable for the circuit.


PROBLEM SET-4

1. For the MOSFET circuit below, input is sinusoidal signal of amplitude 1V and frequency
50Hz Find, the DC operating point, Plot the frequency response and Plot the input, output and
transfer characteristics and find out the small signal equivalent. Assume an overdrive voltage
of 0.2V.
Use MOSFET 500nm library file provided.

[Link]. Resistor Name Value


1. R1 (MΩ) Initial/ starting value—
(Last digit of 2nd group
member ID + 3) multiplied
by your tut section no.
Increase if required
2. R2 (MΩ) (Last digit of Ist group
member ID + ( Tut Section
no.)
3. R3 (kΩ) Last three digits of 3rd
group member year of
admission – Tut section
number

Q2 For the rectifier circuit shown below,


Plot the transient analysis for a sinusoidal input signal of frequency 12 V amplitude, 50Hz
frequency
Find the ripple factor , form factor, and rectifier efficiency from the output .

Diode model to be used: 1SR154-400

[Link]. Resistor Name Value


1. R1 (mΩ) (Last digit of 2nd group
member ID + 3) multiplied
by your tut section no.
2. C1 (µF) (Last 4 digits of Ist group
member ID *Tut Section
no. If C1 obtained is less
than 500uF, Take C1 to be
500uF and if the value is
more than 1500uF take it to
be 1500uF
3. L1 (nH) Last two digits of 3rd group
member year of admission
– Tut section number
PROBLEM SET-5
3. A schematic of common emitter amplifier (CE) is shown in the figure below.
Obtain the DC Operating point, plot the Bode plot for voltage gain (AV) and current gain
(AI).
Also observe the output waveform for a 1KHz 10mV sine wave as input excitation.
Also calculate the input impedance (Rin) and output impedance (Rout) of the amplifier.
a. What is the impact of R2 on AV, AI, Rin and Rout?
b. What is the impact of RE on AV, AI, Rin and Rout?
c. What is the impact of Bias voltage VEB on AV, AI, Rin and Rout?
d. Design the circuit to achieve the target specifications (as per the table) to be achieved by
choosing proper values for Resistors and Bias Voltage.

[Link]. Specification Value


1. Input Resistance in kΩ Last digit of Ist group member ID + Tut section
number.
2. Voltage gain in dB Last two digits of 2nd group member’s year of
admission + Tut Section number
3. 3 dB Band width in MHz (Sum of last four digits in 3rd group member ID
) x 5 + (Tut section number).

If obtained value is less than 10MHz, take it as


10MHz.
4. BJT Model to be used BC107A
4. (DC Analysis and parametric sweep): For the two port network shown in figure below,
obtain the Z-parameters, ABCD (transmission) parameters and h (hybrid) parameters. Cross
check your results obtained from simulation against hand calculations. What is the gain if a
voltage source has a resistance 5k and the load resistance is 1kohm?

5.
[Link]. Resistor Name Value
1. R1(kΩ) (Last digit of Ist group member ID + 3)
multiplied by your tut section no.
2. R2 (kΩ) Product of last two digits of Ist group
member ID + tut section no.
3. R3 (kΩ) (Sum of last three digits of Ist group
member ID )*Tut Section no.

If R3 obtained is zero then take it as


12kohm
4. R4 (kΩ) Last two digits of Ist group member year
of admission – Tut section number
PROBLEM SET-6

1. For the MOSFET circuit below, input is sinusoidal signal of amplitude 1V and frequency
50Hz. Find, the DC operating point, Plot the frequency response and Plot the input, output and
transfer characteristics and find out the small signal equivalent. Assume an overdrive voltage
of 0.2V
Use MOSFET 500nm Library file provided.

[Link]. Resistor Name Value


1. R1 (kΩ) (Last digit of Ist group
member ID + 50)
2. C1 (nF) 0.1*(Last digit of 3rd
group member ID + Tut
Section no x2 ).

2. For the two port network shown in figure below,


--- obtain the Z-parameters, y parameters and h (hybrid) parameters(at both low and high
frequency values).
----Cross check your results obtained from simulation against hand calculations.
---What should be the value of load resistance connected at Port-2 for maximum power transfer
when a voltage source of 15V is connected at Port-1.
[Link]. Variable Name Value
1. R1(kΩ) (Last digit of 3rd group member ID + 3) multiplied by tut
section no.
2. R2 (kΩ) Product of last two digits of Ist group member ID + tut section
no.
3. R3 (kΩ) (Sum of last three digits of 2nd group member ID ) *Tut Section
no.

If R3 is found zero take it to be 10kΩ


4. k Last two digits of Ist group member year of admission – Tut
section number
PROBLEM SET-7
Q1. For the MOSFET circuit below, input is sinusoidal signal of amplitude 1V and frequency
50Hz. Find, the DC operating point, Plot the frequency response and Plot the input, output and
transfer characteristics and find out the small signal equivalent. Assume an overdrive voltage
of 0.2V
Use MOSFET 500nm/ 180nm Library file provided.

[Link]. Resistor Value


Name
1. R1 (kΩ) (Last digit of Ist group member ID + 10)
2. C1 (nF) 0.1*(Last digit of Ist group member ID
+ Tut Section no).

Q2.
For the two port network shown in figure below,
---obtain the Z-parameters, ABCD (transmission) parameters and h (hybrid) parameters. Cross
check your results obtained from simulation against hand calculations.
---What should be the value of load resistance (RL) connected at Port-2 for maximum power
transfer when a voltage source of 15V is connected at Port-1.
[Link]. Resistor Name Value
1. R1(kΩ) (Last digit of Ist group member ID + 3) multiplied by
your tut section no.
2. R2 (kΩ) Product of last two digits of Ist group member ID + tut
section no.
3. R3 (kΩ) (Sum of last three digits of Ist group member ID )*Tut
Section no. If R3 is found zero take it to be 10kΩ
4. k Last two digits of Ist group member year of admission
+ Tut section number
PROBLEM SET-8
1. A schematic of common emitter amplifier (CE) is shown in the figure below.
Obtain the DC Operating point, plot the Bode plot for voltage gain (AV) and current
gain (AI). Also observe the output waveform for a 1KHz 10mV sine wave as excitation.
Also calculate the input impedance (Rin) and output impedance (Rout) of the amplifier.
a. What is the impact of R2 variation on AV, AI, Rin and Rout?
b. What is the impact of RE variation on AV, AI, Rin and Rout?
c. What is the impact of Bias voltage VEB variation on AV, AI, Rin and Rout?
d. Design the circuit to achieve the target specifications (as per the table) to be achieved by
choosing proper values for Resistors and Bias Voltage.

[Link]. Specification Value


1. Input Resistance in kΩ Last digit of Ist group member ID + Tut section
number.
2. Voltage gain in dB Last two digits of your year of admission + Tut Section
number
3. 3 dB Band width in MHz (Sum of last four digits in Ist group member ID ) + Tut
section number.

If obtained value is less than 10MHz, take it as 10MHz.


4. BJT Model to be used BC107A
2. For the rectifier circuit shown below, Plot the transient analysis for a sinusoidal input signal
of frequency 10V amplitude, 50Hz frequency
Find the ripple factor , form factor, and efficiency from the output.
Diode model to be used: 1SR154-400

[Link]. Resistor Name Value


1. R1 (mΩ) (Last digit of Ist group
member ID + 3) multiplied
by your tut section no.
2. C1 (µF) (Last 4 digits of Ist group
member ID *Tut Section
no. If C1 obtained is less
than 500uF, Take C1 to be
500uF and if the value is
more than 1500uF take it to
be 1500uF
3. L1 (nH) Last two digits of Ist group
member year of admission
– Tut section number
PROBLEM SET-9
Q1. For the MOSFET circuit below, input is sinusoidal signal of amplitude 1V and frequency
50Hz.
Use MOSFET 500nm Library file provided
1. Find, the DC operating point,
2. Plot the frequency response and Plot the input, output and transfer characteristics and
find out the small signal equivalent. Assume an overdrive voltage of 0.3V
3. Increase frequency from 50 Hz to 1MHz . Again, Plot the frequency response and Plot
the input, output and transfer characteristics. Compare the results with part (2)

[Link]. Resistor Name Value


1. R1 (kΩ) (Last digit of Ist group member ID + 50) x (40K)
2. C1 (nF) 0.1*(Last digit of Ist group member ID + Tut Section
no).

Q2.
For the two port network shown in figure below,
---obtain the Z-parameters, ABCD (transmission) parameters and h (hybrid) parameters (at
both low(1K Hz) and high frequency (10M Hz values). Cross check your results obtained from
simulation against hand calculations.
---What should be the value of load resistance (RL) connected at Port-2 for maximum power
transfer when a voltage source of 15V is connected at Port-1.
--- vary C1 from 1pF to 1uF. Determine/ plot the variation in V2

[Link]. Resistor Name Value


1. R1(kΩ) (Last digit of Ist group member ID + 3) multiplied by your tut
section no.
2. R2 (kΩ) Product of last two digits of Ist group member ID + tut section no.
3. R3 (kΩ) (Sum of last three digits of Ist group member ID )*Tut Section no.

If R3 is found zero take it to be 10kΩ


4. K Last two digits of Ist group member year of admission – Tut section
number
PROBLEM SET-10
Q1. For the MOSFET circuit below, input is sinusoidal signal of amplitude 1V and frequency
50Hz.
Use MOSFET 500nm Library file provided
1. Find, the DC operating point,
2. Plot the frequency response and Plot the input, output and transfer characteristics and
find out the small signal equivalent. Assume an overdrive voltage of 0.3V
3. Increase frequency from 50 Hz to 1MHz . Again, Plot the frequency response and Plot
the input, output and transfer characteristics. Compare the results with part (2)

[Link]. Resistor Name Value


1. R1 (kΩ) (Last digit of Ist group member ID + 50) x (40K)
2. C1 (nF) 0.1*(Last digit of Ist group member ID + Tut Section
no).

Q2.
For the two port network shown in figure below,
---obtain the Z-parameters, ABCD (transmission) parameters and h (hybrid) parameters (at
both low(1K Hz) and high frequency (10M Hz values). Cross check your results obtained from
simulation against hand calculations.
---What should be the value of load resistance (RL) connected at Port-2 for maximum power
transfer when a voltage source of 15V is connected at Port-1.
--- vary C1 from 1pF to 1uF. Determine/ plot the variation in V2

[Link]. Resistor Name Value


1. R1(kΩ) (Last digit of Ist group member ID + 3) multiplied by your tut
section no.
2. R2 (kΩ) Product of last two digits of Ist group member ID + tut section no.
3. R3 (kΩ) (Sum of last three digits of Ist group member ID )*Tut Section no.

If R3 is found zero take it to be 10kΩ


4. K Last two digits of Ist group member year of admission – Tut section
number
PROBLEM SET-11
6. A schematic of common emitter amplifier (CE) is shown in the figure below.
Obtain the DC Operating point (choose Ri yourself, you can vary R2 to get optimum value))
, plot the Bode plot for voltage gain (AV) and current gain (AI).
Also observe the output waveform for a 1KHz 10mV sine wave as excitation.
Also calculate the input impedance (Rin) and output impedance (Rout) of the amplifier.
a. What is the impact of R2 on AV, AI, Rin and Rout?
b. What is the impact of RE on AV, AI, Rin and Rout?
c. What is the impact of variation in voltage Vy on AV, AI, Rin and Rout?
d. Design the circuit to achieve the target specifications (as per the table) to be achieved by
choosing proper values for Resistors and Bias Voltage.

[Link]. Specification Value


1. Input Resistance Last digit of Ist group member ID + Tut section number.
in kΩ
2. Voltage gain in Last two digits of 2nd group member’s year of admission +
dB Tut Section number
3. 3 dB Band width (Sum of last four digits in 3rd group member ID) + (Tut
in MHz section number x 20 ) MHz.

If obtained value is less than 10MHz, take it as 10MHz.


4. BJT Model to be BC107A
used
7. For the two port network shown in figure below, check for dc input and if input (V1) is
sinusoid
-----obtain the Z-parameters, g parameters and h (hybrid) parameters. (at both low(1K Hz) and
high frequency (10M Hz values)
----Cross check your results obtained from simulation against hand calculations.
---What is the voltage gain and transconductance gain if a sinusoidal voltage source (at V1)
has a resistance 5k and the load resistance is 1 kohm? Check the impact with variation in
load resistance

[Link]. Variable Name Value


1. R1(kΩ) (Last digit of Ist group member ID + 3) multiplied by tut
section no.
2. R2 (kΩ) Product of last two digits of 3rd group member ID + tut
section no.
3. R3 (kΩ) (Sum of last three digits of 2nd group member ID )*Tut
Section no.

If R3 obtained is zero then take it as 12kohm


4. R4 (kΩ), R5 (kΩ), Last two digits of Ist group member year of admission –
Tut section number
PROBLEM SET-12

1. For the MOSFET circuit below, input is sinusoidal signal of amplitude 1V and
frequency 50Hz.

--- choose appropriate Vbias value for active region operation of M2.
----Find, the DC operating point, for amplifier and (M1, M2) individually.
----Plot the frequency response of amplifier
--- Plot the input, output and transfer characteristics and find out gm, gmb, ro of both
(M1, M2) individually.
--- draw the small signal equivalent of circuit. And chk above results using manual
analysis.
Assume an overdrive voltage of 0.2V
Use MOSFET 500nm Library file provided.

[Link]. Resistor Name Value


1. C1 (nF) 0.1*(Last digit of Ist group
member ID + Tut Section
no).
2 R2 (kΩ) Last 2 digits-of 3rd group
member ID + (Tut section
no. ×3)
Q2. For the two port network shown in figure below,
--- obtain the Z-parameters, y parameters and h (hybrid) parameters. (at both low(1K Hz) and
high frequency (10M Hz values)
----Cross check your results obtained from simulation against hand calculations.
---What should be the value of load connected at Port-2 for maximum power transfer when a
voltage source of 15V is connected at Port-1.
---- what is the impact of variation in value of C1 on V2?

[Link]. Resistor Value


Name
1. R1(kΩ) (Last digit of Ist group member ID + 3) multiplied by your tut section
no.

2. R2 (kΩ) Product of last two digits of 3rd group member ID + (2*tut section no. )
3. R3 (kΩ) (Sum of last three digits of 2nd group member ID )*Tut Section no.

If R3 is found zero take it to be 10kΩ


4. k Last two digits of Ist group member’s year of admission – Tut section
number
PROBLEM SET-13
1. For the MOSFET circuit below, input is sinusoidal signal of amplitude 1V and frequency
50Hz. Find, the DC operating point (I, Vgs, Vds) for power dissipation = 0.2mW , Plot the
frequency response and Plot the input, output and transfer characteristics and find out the small
signal equivalent. Assume an overdrive voltage of 0.2V
Use MOSFET 500nm Library file provided.

[Link]. Resistor Value


Name
1. R1 (kΩ) (Last digit of Ist group member ID + 10)
x (50K)
2. C1 (nF) 0.1*(Last digit of 3rd group member ID
+ Tut Section no).
2. For the two port network shown in figure below,
--- obtain the Z-parameters, y parameters and h (hybrid) parameters (at both low(1K Hz) and
high frequency (10M Hz values).
----Cross check your results obtained from simulation against hand calculations.
---What should be the value of load resistance connected at Port-2 for maximum power transfer
when a voltage source of 15V is connected at Port-1.
---- what if c1 is varied from 1nF to 1F in step of 10x

[Link]. Resistor Name Value


1. R1(kΩ) (Last digit of 3rd group member ID + 3) multiplied by
your tut section no.
2. R2 (kΩ) Product of last two digits of Ist group member ID and tut
section no.
3. R3 (kΩ) (Sum of last three digits of 2nd group member ID %
8)*Tut Section no. If R3 is found zero take it to be 10kΩ
4. K Last two digits of Ist group member year of admission –
Tut section number
PROBLEM SET-14

Q1. A schematic of emitter follower amplifier (CE) is shown in the figure below.
---determine value of R2 required . Obtain the DC Operating point,
---plot the Bode plot for voltage gain (AV) and current gain (AI). Also observe the output
waveform for a 1KHz 10mV sine wave as excitation.
----Also calculate the input impedance (Rin) and output impedance (Rout) of the amplifier.
a. What is the impact of variation in R2 on AV, AI, Rin and Rout?
b. What is the impact of variation RE on AV, AI and Rin?
c. What is the impact of lowering Vcc on AV, AI and Rin? What is the lowest Vcc for which
circuit operates?
d. Design (you can change passive component values minimally) the circuit to achieve the
target specifications (as per the table) to be achieved by choosing proper values for Resistors
and Bias Voltage.

[Link]. Specification Value


1. Input Resistance in kΩ 13+Tut section number of Ist group member
2. Current gain in dB (2*Last two digits of 2nd group member
[Find RL values for given spec.] year of admission) - Tut section number
3. 3 dB Band width in kHz 400+[(Sum of last four digits of third group
member ID % of 50)* Tut section number]
4. BJT Model to be used BC107B

Q2. For the rectifier circuit shown below,


--Plot the transient analysis for a sinusoidal input signal of amplitude 10V and frequency 50Hz
--Find the ripple factor , form factor, and efficiency from the output waveform.
Diode model to be used: 1SR154-400

[Link]. Resistor Name Value


1. R1 (kΩ) (Last digit of Ist group
member ID + 3) multiplied
by your tut section no.

2. C1 (µF) (Last 3 digits of 3rd group


member ID *Tut Section
no.

NOTE—

--if the capacitance C1 value found is such that 50uF<C1<500uF, take 1/10 of this value.
--If 500uF<C<1000uF take 1/20 of the value and
--if C1> 1000uF, then take 1/50 of the value.

Make inferences as to what capacitance value C1 is suitable for the circuit.


PROBLEM SET-15
Q1. For the MOSFET circuit below, input is sinusoidal signal of amplitude 1V and frequency
50Hz
---Find, the DC operating point,
---Plot the frequency response and Plot the input, output and transfer characteristics and obtain
gm, gmb, ro values
--- find/ draw the small signal equivalent. Assume an overdrive voltage of 0.2V.
Use MOSFET 500nm library file provided.

[Link]. Resistor Value


Name
1. R1 (MΩ) (Last 2 digits of Ist group member ID + 3) multiplied by
your tut section no.

Increase/ decrease if required


2. R2 (MΩ) (Last digit of 2nd group member ID + 5 /Tut Section no.
3. R3 (kΩ) Last three digits of 3rd group member year of admission –
Tut section number
Q2. For the two port network shown in figure below, obtain the Y-parameters, z parameters
and h (hybrid) parameters (at both low(1K Hz) and high frequency (10M Hz values).
Cross check your results obtained from simulation against hand calculations.
What is the voltage gain , trans-resistance if a sinusoidal voltage source has a resistance 6k
and the load resistance is 5kohm? Determine impact of changing C1 value.

[Link]. Resistor Name Value


1. R1(kΩ) (Last digit of Ist group
member ID + 3) multiplied
by your tut section no.
2. R2 (kΩ) Product of last two digits of
Ist group member ID + tut
section no.
3. R3 (kΩ) (Sum of last three digits of
3rd group member ID
)*Tut Section no. If R3
obtained is zero then take it
as 12kohm
4. R4 (kΩ) Last two digits of 2nd
group member year of
admission – Tut section
number
PROBLEM SET-16

Q1. A schematic of emitter follower amplifier (CE) is shown in the figure below.
---determine value of R2 required . Obtain the DC Operating point,
---plot the Bode plot for voltage gain (AV) and current gain (AI). Also observe the output
waveform for a 1KHz 10mV sine wave as excitation.
----Also calculate the input impedance (Rin) and output impedance (Rout) of the amplifier.
a. What is the impact of variation in R2 on AV, AI, Rin and Rout?
b. What is the impact of variation RE on AV, AI and Rin?
c. What is the impact of lowering Vcc on AV, AI and Rin? What is the lowest Vcc for which
circuit operates?
d. Design (you can change passive component values minimally) the circuit to achieve the
target specifications (as per the table) to be achieved by choosing proper values for Resistors
and Bias Voltage.

[Link]. Specification Value


1. Input Resistance in kΩ 13+Tut section number of Ist group member
2. Current gain in dB (2*Last two digits of 2nd group member
[Find RL values for given spec.] year of admission) - Tut section number
3. 3 dB Band width in kHz 400+[(Sum of last four digits of third group
member ID % of 50)* Tut section number]
4. BJT Model to be used BC107B
Q2----For the two port network shown in figure below, obtain the Y-parameters, z parameters
and h (hybrid) parameters (at both low(1K Hz) and high frequency (10M Hz values).
Cross check your results obtained from simulation against hand calculations.
What is the voltage gain , trans-resistance if a sinusoidal voltage source has a resistance 6k
and the load resistance is 5kohm? Determine impact of changing C1 value.

[Link]. Resistor Name Value


1. R1(kΩ) (Last digit of Ist group
member ID + 3) multiplied
by your tut section no.
2. R2 (kΩ) Product of last two digits of
Ist group member ID + tut
section no.
3. R3 (kΩ) (Sum of last three digits of
3rd group member ID
)*Tut Section no. If R3
obtained is zero then take it
as 12kohm
4. R4 (kΩ) Last two digits of 2nd
group member year of
admission – Tut section
number

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To find a suitable capacitance value C1 for ripple reduction in a rectifier circuit, one needs to consider the load and the specified ripple requirements. Use the equation C1 = I/(fVr) where I is the load current, f is the frequency, and Vr is the ripple voltage. If calculated C1 falls between 50uF and 500uF, it should be taken as 1/10th of this value; if between 500uF and 1000uF, 1/20th; and if more than 1000uF, 1/50th, according to constraints. An incorrect C1 value can lead to inadequate ripple reduction, leading to inefficient performance and possible damage to downstream electronics due to excessive voltage variations. On the other hand, too high a capacitance can cause a sluggish response in the circuit, increasing physical size and cost unnecessarily.

Selecting the correct diode model for rectifier circuits is crucial as it affects the transient response and efficiency. The diode's forward voltage drop, reverse recovery time, and peak reverse voltage ratings dictate how effectively it rectifies alternating current to direct current. The 1SR154-400 diode offers a balance between low forward voltage drop and adequate reverse blocking capacity, making it suitable for household frequency operations like 50Hz. Its transient response would ensure minimal lag in starting conduction or entering reverse blocking mode, maintaining efficiency by reducing power losses during switching. Thus, the 1SR154-400 aligns with requirements by providing a stable operation under typical rectification conditions without introducing excessive losses or thermal stress.

Resistor R2 affects different parameters in a common emitter amplifier. Increasing R2 tends to increase the voltage gain (AV) because it affects the load line and the biasing point. It influences the transistor's Q-point, thus altering the amplification characteristics. Conversely, a higher R2 could decrease the current gain (AI) due to possible reduction in the base current, affecting the transistor's ability to amplify the current. Input impedance (Rin) may increase because of changes in biasing, but since R2 primarily affects biasing rather than the input directly, its impact might be less significant compared to AV and AI. For output impedance (Rout), increasing R2 generally leads to higher output impedance since it affects the equivalency seen by the load.

From a MOSFET with a given overdrive voltage, small-signal parameters such as transconductance (gm), output conductance (gds), and body effect transconductance (gmb) can be derived. Transconductance gm is typically proportional to the square root of the drain current and inversely proportional to the overdrive voltage. As frequency changes from 50Hz to 1MHz, the frequency response will notably change: initially, cut-off frequencies will determine the bandwidth. Beyond these frequencies, capacitive elements in the MOSFET will dominate, reducing gain. At 1MHz, high-frequency effects like parasitic capacitance lead to a drop in gain and potential phase shifts, affecting stability and performance. These changes illustrate the trade-off between speed and gain in MOSFET design.

The Z, ABCD, and h parameters of a two-port network can be verified by creating a simulation model of the network that accurately reflects the real-world circuit using software tools like SPICE. In simulations, these parameters are determined by providing sinusoidal inputs across ports and measuring voltages and currents to calculate parameters such as impedance, admittance, and hybrid parameters using fundamental equations. Discrepancies might arise due to rounding errors in manual calculations, idealizations in theoretical approaches, or the omission of parasitic elements reflected in simulations. Variations in expected and actual device characteristics, temperature effects, and non-linearities that are difficult to encapsulate in simple hand calculations can contribute to these discrepancies. Thus, simulations can reveal nuanced behavior not captured manually, emphasizing the importance of multiple verification methods.

The variation in emitter resistor RE in a common emitter amplifier significantly impacts various parameters. Increasing RE generally reduces the voltage gain (AV) as it introduces negative feedback, improving linearity but reducing overall gain. It also affects the current gain (AI) in a similar way due to less variation in collector current with base current changes. Furthermore, RE increases the input impedance (Rin) due to decreased load seen by the base of the transistor. In terms of output impedance (Rout), increasing RE usually leads to higher Rout, as it increases the output resistance from the transistor's collector due to the degenerative feedback effect.

The DC operating point of a MOSFET circuit establishes the Q-point, influencing both gain and frequency response. The Q-point affects the region of operation (cutoff, active, or saturation), which in turn dictates linearity and maximum signal swing. In a 500nm technology MOSFET, a properly set DC operating point allows optimal transconductance (gm) and maximum gain in the saturation region. As input frequencies vary, the operating point needs positioning to maintain transistor operation in this active region to ensure a consistent linear response. At higher frequencies, the gain typically decreases due to parasitic capacitance and the limited transit time of carriers, stressing the need for careful Q-point biasing to maintain amplification performance across a wide frequency range.

Achieving target voltage gain and bandwidth in a BJT amplifier involves balancing several design factors. Selecting resistors to set the appropriate biasing and load for the transistor is crucial, as these influence gain through the load line. The BC107B model offers moderate gain and bandwidth, making it suitable for medium-frequency applications. Its hfe, which dictates current gain, should align with design specifications to achieve desired voltage gain. Additionally, capacitive elements, such as coupling and bypass capacitors, should be optimized to set low and high-frequency cut-offs in the desired bandwidth range. Using the BC107B can provide a reliable performance for moderate bandwidth, but achieving specific gains might require careful consideration of feedback networks to minimize distortion. Therefore, the choice of this model impacts power handling and frequency response, mandating a need for precise component values and biasing to exploit its characteristics fully.

The bias voltage VEB is critical in establishing the proper Q-point of a common emitter amplifier, ensuring that it operates in the active region. If VEB is increased, it shifts the Q-point, affecting the operating point of the transistor. This shift can increase both voltage gain (AV) and current gain (AI), particularly if it results in optimal biasing where the transistor amplifies efficiently without clipping. Additionally, VEB alterations affect input impedance (Rin) as they change the base current, which in turn impacts how the input voltage is loaded. The output impedance (Rout) may also change due to shifts in the transistor's characteristics with different biasing.

Z-parameters, or impedance parameters, of a two-port network change with frequency due to reactive components. At low frequencies, inductive and capacitive reactances are smaller, making Z11 and Z22 (input and output impedances) smaller, while Z12 and Z21 (reverse and forward transfer impedances) depend less on capacitive coupling. As frequency increases, reactive effects can dominate, significantly increasing these values due to capacitive and inductive reactance. This affects maximum power transfer considerations because at higher frequencies, an increased Z22 might affect matching conditions that are ideal for maximum power transfer. Implicitly, these changes enforce a need for careful design to ensure that load resistance matches conjugate impedances for optimal power transfer across varying operating frequencies.

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