hall e zr] Rectifier PD-9.595A, IRFP448 HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Parallaling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 10-247 package is preferred for commercial industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to a Ip = 11A Voss = 500V Rog(on) = 0.602 meet the requirements of most safety specifications, Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, Vas @ 10 V i Continuous Drain Current, Ves @ 10V 66 A — [Pulsed Drain Current © 44 Power Dissipation _ 180 w Linear Derating Factor 14 wre [Ves Gate-to-Source Voltage +20 v Exs______| Single Pulse Avalanche Energy © 550 md las ‘Avalanche Current © _ it A Ena Repetitive Avalanche Energy © 18 mJ dvidt______| Peak Diode Recovery dvidt @ 35 ___| Wins Ty ‘Operating Junetion and 85 to +150 Tste Storage Temperature Range # cy Mounting Torque, 6-32 or Ma screw ~ 300 (i émm ifom case) 10 Ibfein (1.1, Thermal Resistance Parameter Typ. Max. Units Reve ase Peet 0.70 Recs Case-to-Sink, Flat, Greased Surface, = 0.24 = °C Rua Junetion-to-Ambient ea eee 40 1018 Pay SHEETSIRFP448 [TER] Electrical Characteristics @ Tj = 25°C (unless otherwise specified) Parameter Min. | Typ. | Max. | Unite Test Conditions Visnoss | Drain-to-Source Breakdown Voltage | 500] — | — | V 250UA AVisrioss/AT, Breakdown Voltage Temp. Coefficient | — | 0.60 — | VC | Reference to 25°C, I= ImA Rosie Static Drain-to-Source On-Resistance_| — | — | 060] Q Vos ‘Gato Threshold Voltage 207 — [40 v is Forward Tansconductance e7]—-{[-]|Ss 7 = | — [2s Vos=500V, Vas=0V loss Drain-to-Source Leakage Current ee ee 1 Gato-to- Source Forward Leakage — |= 0, less Gate to-Source Reverse Leakage = = F100 [G, Total Gate Charge == Ts4 Qos Gate-to-Source Charge — | — | 84] nC | vos=a00v Ose Gate-1o-Drain (Miller) Charge == TF s0 Ves=10V See Fig. 6 and 13 @ Tory Tumn-On Delay Time = [is T— Voo=250V t Rise Timo = [40 T=] ,, |t-0.60 Ten "Tum-Off Delay Time —[e l= Fig=7.80 u Fall Time, Sa Fio=27_ See Figure 10 @ bo Internal Drain Inductance — | 50) — leon g nH | from package | die contact Cise Input Capacitance = [1900 | — Vos=0V Coss ‘Quiput Capacitance = [490 [=] PF | Vos= 25v Coss Reverse Transfer Capacitance = [e20 [= J=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. [ Typ. | Max." Units Test Conditions Ts Continuous Source Current cae eee MOSFET symbol e (Body Diode) a. [showing the i Tew Pulsed Source Current eee eee a integral reverse © (Body Diode) © rn junction diode. s Veo) Diode Forward Voltage 7 TV 12 25°0, leet 1A, Ves=0V © te Reverse Recovery Time =| 480 [1100 [ns °C, 1e=9.6A On, Reverse Recovery Charge = [52712 [uc |aidtet00aus © ton Forward Tum-On Time. Intrinsic tum-on time is nealegible (turn-on is dominated by Leto) Notes: © Repetitive rating; pulse width limited by @ Isost1A, dildts120A/us, VoosVierjoss, ‘max. junction temperature (See Figure 11) Tyst80°C © Voo=50V, starting T)=25°C, L=8.2mH @ Pulse width < 300 js; duty cycle <2%. Ro= 1502, las=11 (See Figure 12) 1014ISR IRFP448 g Bue Ie | g FE = anf S s s | aa 6 6 6 6 4 i 1) deus pase 2014 ous PULSE WIDTH ; [ie Bee | LL Lie’? tee%e oe so me tot Vos, Drain-to-Source Voltage (volts) Vos, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, To=25°C To=150°C T g ora 2 B 30 z 3 a Gos E 150°C He o zw! j— os HY ity € BE eo & Ss = 3 3 4 | 38& ie < 22 & -}- ze ct é i S16 6 2 Bos = 13 PULS é ee = 100 AEE ea Cree 8s aa ad 0 a0 40 GO 80 100 12) 140 150 Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Ty, Junction Temperature (°C) Fig 4, Normalized On-Resistance Vs. Temperature 1015IRFP448 TOR 5009 20 = 9.64 Ba son 2 g i a Sx | 2 3 & zo @ s - & 2 | ° 2 3 so 6, 8 > FOREST CAST - see Floune 13 0 20 “608000 Vps, Dr Qa, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage ot - ae Geenar ion IW THIS AREA | THTTEO gq 8Y, Fos cox E SE a = G10? 5 2 £ 5 10 & 3 108] = & s 8 6 é 38 a T 225°C, 2 ge4509C 10-1! Vos = ov ae SINGLE PULSE} os oo 35 iz 75 Te Se Ege Sas See at Vsp, Source-to-Drain Voltage (volts) Vos, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 1016IRFP448 22 Ip, Drain Current (Amps) 50 70S To, Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature & : g 8 3 3 é Save us 3 Cet PEsomse E i 5 é tot I rd 19 107 Ro Vos >" Voo Pulse With s 1s Duty Facter 50.1% ‘aon aon Fig 10b. Switching Time Waveforms tile reed NoTES: 4, DUTY FACTOR, O=ti/te 2. FEM Ty=Pou * Zenje + Te 107 0.8 t 10 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1017IRFP448 TGR Vary tpte obtain VOS. ih requited Ing 1209 ~ % [Link] soe} AL sottom tia sok earn Fig 12a. Unclamped Inductive Test Circuit 400 Viprjoss r-® 200 Yop Eas, Single Pulse Energy (mJ) Yoo = Sov o Vos. sme Starting Ty, Junction Temperature(°C) \ hs — — — eee Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms curront Regulator Same Type as DUT, Cie f Thour 7¥s Ves ny ama ETL SS Charge ——> Cconent Samping Resietore Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/at Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing — See page 1511 Appendix C: Part Marking Information — See page 1517 International fer) Rectifier 1018