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Unit 2

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Sabir S XI-A
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0% found this document useful (0 votes)
13 views27 pages

Unit 2

Uploaded by

Sabir S XI-A
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF or read online on Scribd
Power Electyomc $. tol + Electronics | | owey Electromcs yt Gen ‘ dewer Goud stake electronics butt eative gleckrong 00 woithin the Soud bn * Common fricr prose D Power Electrons’ - electronics fo : Pa based 07 vices ( the mapor ouey mime Adker (1705 7 Jot 4 eveloped- mojor classify colt Oo Power “diodes @ Powe yansisteor @ thynstey Power semitonducdiy diodes. is pow’ drodes ploy: ‘apo + yle in power electro OS civuits for Convesiod Cy ehectvic powk” * prades ques a quite lo pate avi oud nents Lyans fev b cbween Comp isolation loud + i cdhak from cmd ~ diode ~- Enev S Veltoue Enavay ne Ely hack +4 Fyeewheelin / ida a bo Srubbey diel) diets) 8% & sudden Vol & supp deg 6 oy Cathode , whch ' (ey back dave load when | an indw owed yedund OF vm the diodes , th Convery hen be battery is” Oiode Locks Us , the diode is S04 bo be | youre _biawd- diode My be tho fe hike ae oe W dosed” when forward wan and i open w yevene biared Power diodes hove oO Syonilat y-L chovaderis 6 oo ovduinany ood diode : do Warren Sey | 1G unn diode - | A Gunn diode 1S Considered a & oe of diode ver though Contour typical pr Juncon ihe Conisk tuo eleckrodes eae due ee coud " Tf elukyorw c devia. ths diode 16 & negalnt angperet gurtstane device _ ahich is frequen (Jud ae lp genre eg erv wares © duly s low powe osciakoy Consists of ony n-type h the mefor'y chow BoA tnt leuss prespde prsenide) and Some other ™e energy bond in their eleckyonic band instead of only 00 nor bands VIA, and Condaackion band like hormal Ceri Cond kor DL anade a neem NA Gone | ov | Gan substrate | N butter Aauyer Cackive) LNT Gans U a Cakhedle 4 ‘= Devile cress- section Pes oe Gans and Seme other Semi Londancko makenals Consick of three energy bands and ths , imbal s<¢ exta band band Is emply at bo ‘bhe devin Men . 2 7 is copped rit es 4 2 app ik apices Coes the aukie v4 2 Sapke: eleckrens f the Conducckion band howins ave bvans pened inko 7 tt eluknicah cross tuity band became these electrons are ceakbeved q A tRivd the appired ee * the third band oF Gans has mobi which ic lew than th the! Conduccon band . third fed cbrength bang hore hgh seiclivly thus i j then the dnt Veled wilh deceake , the Create a ls incremental resistant Wig eng hulako hip Cuwert sveadun the d Sart tnueasing id ao Cerkerh Volt level ( Ureshold Vo a is te ve vere * As Shown in aie, yi biadey devile , buk afer Cayvent decrease before "ma T : Where he Current falls js beamed as oo. oo ne yegion , and due bv in peti stave YEMON y am wer and in the hin, | Gunn diode cappticalions!- : | | * Used ww a Gunn soe bo qanevake fyequenaes yan nq from (oo mw ak Suly Uo Iw ak 35 Ge ‘de Gunn osullaloy a for yadio Communicakion 7 bulilary and Commenuel yaday Sources gent huicroward ye wed enero with a * Used % eyo jrequeny rege upte handed Guiry % Used aw & icrow ane carak qe C Putsed rem diode ee .). Schottky diode % Schottky diode is one Eype eledaoni C. Component, whch is also Kasusn as barney diode, s like & used In da yorent appucakion and os & TE is widely finer | jin vadio frequenu] opptcabsons ) eda frex in powes apppicabions qi a low Veneqe diode % Schoblky dioda ig aso Keown 2 hot Camer diode % this a low tes diode ye Schottky diode Me Tr doop povmalti en 4 ols and Os Volés x Oe low Volles devop ne yen ssl tal an bd on yrs Schot# diode, & Gemitanduidcoy ~ nrekel ee fore bebween seniondautay and a meksul Concbyackion! barney dyode y meals for the * jiko molyduntm plalanum ) chromiun , bungben Aluminum , gold eke are used and the Sernitonduckoy wed is N-type tnecal ——_—— ohrie, tonba Anode ' . | 1 he bype 4 . 1 Seenwi vondalor z omen od + N-type Serniton duukor aus os & cobhode and moat side wks anode 4 diode Anode Cathode | ao juseer is formed by bringing treba Contac with a moderalely doped N- by pe senni vondukor matenal - A schoteky barney diode '§ unidirectional device Con dutlang canenk Hows only one divectron Y V-r chavacterisha of Scho barney diode scho tt % the for Lame dieds is very ps juncon diode . the forward ee fs drop oes from OdV ) a ee ee ee | ¥ the foward Voltage dv jh creases | at the Same Lime incrasing the depin Conten Lyakion s 4 nly Seni cor f « the V-L chavackeris 44 4 scholtk bare ¥ vet chavactenstes diode ave very staper Compared bo 4 hormal PN jondbon diode due to hp Contuanbratren of, Caryent Carriers | barren YL. et pr dude. uit 7 +> Nel oo | Applicatrons | X Used in Vell 7] appicabons * Used bv jon baNsystor — sakuralson due bo the hgh Caurvent daasity i Schottky divde. * S chettky Gicde also ured ar redafyerr ih pease Suppues x ImMpatTt diode ends fov | Jen Patt Diodes— Lmpok pegakte yesiskana MY device which Comes the Gurvent be Igo" ovk oF phere wi ik Ft pot dod uaise = & Combinakron of shaw} inated Th Avalanthe Carver rwwapl cate” > & by doko dur bo brant Lime throw a Ute Spee fe pode the. newman Igo" een between he appeal watoge paed Caren all aay | K An exkremeliy hap Voliege qrdent 4, he | ovdev q 4° kvlen is 2pped fo the a—mpatr dicde , eventual wewiking in & Very h iparenterl to withstand. The IM PATT diode fe a oun ° su Condation vepentatly : Under oe en C haga potest!) restore > agpteed 1 , 0 P { carne aerest tundzion - | . ati rine J [rewds in We Yotak how Leome $9 Eleukvans ye Mes are pe e kal ; {Fram ok ob he SY! joniaakion i Ja aitrons bY ET asen om impo’ ns a pe v rans) é i De voltegt Cayotonche Lvechald) | Fegia) Applied’ De and RE weg ?* | bag | | | | (urn Cue anak fT \ ube we Sate || \ Gmenke pubes ae eal) \ ak cathode oe mec | \ when V=—Vin hun V=O | N | Fg Tou We | He etary. dred ws mos ove yt | | soud stake mu croware power cquness ee typical © below about ape i ae rrr rrp VIMLLLL LA J Mf. / 7? Copper anode (4e external heat sink PN pn duede ¢ chockla deol es % PNPN diode le aA kus Lor nal doi which hos eur layer and thee itis Hea -a , hor bee loyes plod and n= loyex Pad ane abornake io eath other f ~ oO broke —t Jundeion © Cokhode a4 5 oe Cobhede seelion and Coyne symbol is Deia User anode Leymihal 76 tite torth cathode berminal Junden A and © ve forward biwed and Tenor e novert biaeol tn bs cae & very gmat current gyom Cathode be anede at Is coe dL | eouxag curvent “| ee | inneae gorward ve Ve it ak wh Fundaon B hen e AP a ceykoxr [pnd weakove' vole id break ove¥ * — when yespok to is flows J yeah? breakdown ye comed B porward olkuge yn creas beyond the’ ology? aie shods te} diode 1 gnoveosh 5 ths , as is comek forwe * when the we oO ve rk ae s anddio cae pearnak in ths coe jr nove wed ex and uncdon i gowwart i a therelpr® very om caren is flow 9 w ee oY yen coued yee Poe Ca) Formnd’ber ae Ve > Vow Creakove votre) Foard Larvenk Hows Very wpe a! Uplding Gane ug Ve a | em y V, Reeve be V. fred (-¥¢ daskog® ( Biarener | pled (4Ve Velie ) | Rene chaadevishian chr UY ducde> Ht ured — rarny ber Swi tin appa pl cakion § duc man iMmpe ig opp cae cy ocho diode Oe ala raki on ocak and bnggen switch ocr ( sien Controlud Reber)! | y the bate ckywkur® ana oe symbol lov $cR th bo uy leqe> Loman ano | devia to gid te a of poe auks ) Ure end 4 nye outs cakhode and ae psy peavey Cathode ae in Spawn very stall charackenstros ScR ouks % is hept a 4e, forward biared - when the i qake (arvent Iq +? operate of ser is Sinalay < 08, the * the iGopnpn dHode - yerere bias op | byeak down 4 when Iq 72, be Ty 3 de bye ak doven uth lovge applied the is voll ose i | ous ata Wy Veo 1S the aroun 4 yeyene creased, thereby ae bias \oltage 4. that pein [ov is Styvlay at which Ser IS vawing the gabe Controlled. swatch , je buned of 2 7" ae ¥ Once SR loses Control Ie, the 7 connat Sankch the devia off. "one % to fun the devia off |S a lovering the a botow the pata In ey Cuppy Voltage (blow ey Xe Vu, a) the gabe open wed tn Contre! , rote contr > ae heater x SR Is Contrel > ue Sappue an Gortrel , phowe Hee chovger , inverter ) oy tacue gi bches as a, Deo a [Link] L WY Vv wife be Veer Eau rele a q fg: ZV Svat aw vister Rakin ee Lakin Cavern (Ie) i Aatdun Garnet is the wed bo [lath % brag hone Curvenk yequ the devi from ofe $ by ib on — State Holding curvenE { Ly)+- ay U loldang — Gunere IS “Yo buinmum Value 4, cw bo hold the devile jn ON -Stake, the anode Curent fox sh the devite OFF > lowoved below Ly (holding asvent ) 4 shoud sh Ceasar, the extemal Gyuut vesistan Gake Cuyvenk (ap- Gake is Current ap puck to the 2 of devin fov Conkro| purposes ° “a haniman bwin Value current devia + the dake Curent is the : enn; on "ad Lose 4 Curren Fequived ak the moaumam ic Current IS roam appued bo Ydewe egithouk dan q I ee mae the qake Curent , eon liex Id ee a" of devie ee vice, Vere 2 satly fou (yt Voltege 5 hich ws Vel to PIV ue 1 is a Yoho & the Rens ale of, nama © pent bag invene Voll Cm ve = pean va xs va f Vy Vode hay malta} (res Power BIT fe BIT 1g & Bipelaw joven breensisor , it hes thee leviminals Zmrikler | Bowe and Collector xy the Bare wer Smalley and is lighbty doped than CoUectr and emitter . Ab the Collector Jeo than o equal etvulley aver x the emiktey aver is hugh} doped Compared to Bore and Coen & Power bipolar J © bransister Carp block: hugh Ve in the ore stake Om see Pa in the ON sake. THe cory" idle - a ite poue' handling copoly a7) ? D we Cntr lo san |e atoed th. Lager oe) 5-doum Ly Medevaley do won 5o— 200m foustr dngt_ > ha at age veg : ees jens ASome N Wide: ty ingy aps Basal vege? Fag (a) : © Coeds plOwk Dele. Cee clues | ¥ the Volt in layey Cr-) Increases coe 01g © ody ¢ " y et o transistor due e low ra. _ the wrdbh of eid vee 7 be | thin ev decades |The ca 2 of dhs [ayer 15 thot 4 the inowase on~stake Vol lvops and ON ~Skede Fyesistente , which Inceases i loss * the povex pet Hy ve pues Lyan srstoy Ki voy hgh so, eh hove j asst ake pouev in the fon of heak - nic oa heak sink wsed- lkpik objec: KRIK epjgse ocus ok high Curent — densibts and Causes & drvamakic: increase bipolar bansishor * the objec bansit Eme he assouiabed sith GayvenE ‘a due to pa densi density pang Unveuh the bane - Collector Pa yw Power BIT Peeiiotck ond lows —dop ed (oUec bor on, IF mesutts in | blouaing Velboge x Tt has exctvem oly love ae densities aed to obbain blaking velleges att as 3000 volts ie novmet aukive § ayeo &t h lo - ce ot in hugh current coppaditres « I-V chavactens tics. iV charackenstics of Pove® BIT jons ° the duvides inte four 6 ck - bY a Adie FIN © aust ~_ stabi 7A” ® Hand satuvalion ae “ yok act | SS | Se none my Soo | Duddy cuk oh) iar a Fy LAV character she y% the BE and C8 both once” ane rerere bias che base quent Tao, and colecY esvagte bt b> He leakage cawent Lceo - Ache nae. BE joer is fowwerd bicwe ene bias a (otlectot Increase Quasi - gakuyaion repent * Quasi — Sodwrakion regen ig bekween the hard solr akion and achive vation ens swe bo Int doped yakes ab f both he grequeny Besos are forward biased y the device OF? low eyes stan Comm pare oakive vegien go, poveY loss 16 less cokuralt jon! - a “o ice gecburolt BI P un b eSeuvell FON jon 4 s ok caved | on fom th os pucient Ls x AC revo O¥ syed Cont voy y oe/ de inver key Lyeo\ awk Powe? mot FETs '— tion pover NIOSFET. y — Pasic MmosFET Ik same © {hod of these he Current handlin Co huky of os , ond the T devia is usualy in lhe Cc otiae + ag — bo of el vol may he in yoits4 oy on highey [oo Kobe advon MmosFET 4 oy i, ol ax povey abe. Cont ‘ $s if | as sent ae - ae rine qn ¢ Control cunenk - with Very Stroud y Aa quvvent 6A" be obleined 1M & MOSFET with a vey lenge channel width - x there ae tuo basic power mosteT Strucwe X the fiok |5 coud & Dinos Devile and is shown in Fig below the Dimes device tenes! oe double — diggesion Soune s- Dmes C double —dfyerren fr _gubshrake ‘Vgr0N x th p- bene oy h contak are dajured Unewgh and the —-h- Sound lq Common window — defined by the 7 ot, the qc ly the p- bose negien is dived. deeper than | the h-Soure and the dugperen 2 jin the Jakeral difgurion dustante bekween the pobue and. the Ne Soune defines the Surpere channel lengths | 4 Eleckrons enter the Soume hevwinal and flow (akovatly Hnwous the )nvewton loyey under the gake bp the n-dni ge vegion Lise then [ow Verboty tmough the 1 dont sane to dyun bev nal - athe convener current direction is jem the dour to yx the n-dnfb negien mut be moderately noun breakdown vattege is doped $0 tho the Houser sulyiuer| lay . , : gon teens the Sound ko pen : x the Serondh pours Mos FET ckyckwre 15 ce Veibs ceckwe \Venes yer dele # The is a hone plana shruckwre that yequres & dufferent types 4, fabricakion Ree The Oy eagormed, Oe ov p-Subsbreke dafyasion is -bare y- bres ( Verheat snoster) Goune- h-dutt ee van branisho¥ X the fobrication Cy mond the fe the foversig skeps | © Epiteraad cS @ Oxidebton Oo photoithegrephy Jysvte” @ dave duyywion @ Emivter moek © Aluminivn mekadnakion Chywat symbol Fg () tho fnekeel Gnlak ae requned 4 | be ohric ond 00 N jundton to be formed Jebocen the mekel and Sitivon layer the NT Au fyeetion lay ev Serws the perpose of gory ohmic Conkacks - On the otherhand , if bemini [is deposited divedty on the N-type siuwn , then the mea Zemitonduckor dode oa” be | soud bo be formed Such a mekal Semi tondudo y idiode exhibits the type of TV charactenshes as that of ordinary pN jageene Ae shown in Py Contuck\ 15 a Schotthy Ihara ord Conte a & ohmic Conback the Senvien duuckor & th Contac poten bral between and mekal genevakes % barviey for the flow Semiconducko¥ bo metal . | Conduucan electron £OM when ae is forward biased , ths barser '$ and the electron is alowed KOM Sem 9 are in lange quenbles. x Same 7 | lowered ‘bo rmekak cohere the elect | | enone & Reastoy » x &# eo (he mronolithi © nbegraleh | crit 15 obaned by uss ring the bulk relskwily | 4 dayweed Voluwne of, Sermvondar ms, |-te Common method of fabricated Arey yess bane ae 0) Ditgued sursler é) Cpitumal wsister @) pinched resister © Thi yen tedniques . Dilyured re sisloy | - formed io oy ¥ the cuppoord yorsta tS one of, the soloed vegTon> 4 epitansal doer dun hae ov emilted jevson prowess sth "yp eroromical 0 it fabrication is very transistor febricabion bue & yeaislen | Yun in ponauet with bipelav ion and feclc Ho monet c | The N-type emitter da fi | Aafpusion are Commonly wed + yeas re, yess the vesistane Value if =n monolilwe reaistA R = Rs L/w whee, R = Wistanle eyeree Cin chews Re = sheet rerstnu 4 portiles pews Ho Vice sength ond width ef, au dyed awe the Shek veuctanu ef hase and ervey appre? Avs [sqve< (e go & [sane epee. Epitruat Resister. A N= epitanial lage tan be wed foe yeatiaing large wnttanw Vakes the fiq above epi lara cet yeristod uo NT fy Larninder poekel Contads. chows the cress - seakional View + formed 7h eprtanual leer belween | Pinched YOULY. | | x the Sheek Yerctanwe harrow deo | | du fasten a Re can be inoreased bY bik aves Sedona aren - “this can offey YeMStane. the order of, ia ig ohms ih ow Comparcdely Smalky aver P-ype Subebrate.

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