High Voltage, High Gain IXBT12N300 VCES = 3000V

BIMOSFETTM Monolithic IXBH12N300 IC110 = 12A

Bipolar MOS Transistor
VCE(sat) ≤ 3.2V

TO-268 (IXBT)

G
Symbol Test Conditions Maximum Ratings
E
VCES TC = 25°C to 150°C 3000 V
C (Tab)
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V
VGES Continuous ± 20 V TO-247 (IXBH)
VGEM Transient ± 30 V
IC25 TC = 25°C 30 A
IC110 TC = 110°C 12 A
ICM TC = 25°C, 1ms 100 A
G
SSOA VGE = 15V, TVJ = 125°C, RG = 30Ω ICM = 98 A C C (Tab)
E
(RBSOA) Clamped Inductive Load 1500 V
PC TC = 25°C 160 W G = Gate C = Collector
E = Emiiter Tab = Collector
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL 1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10 seconds 260 °C Features
Md Mounting Torque (TO-247) 1.13/10 Nm/[Link].
z
Weight TO-268 4 g High Blocking Voltage
z
TO-247 6 g International Standard Packages
z
Anti-Parallel Diode
z
Low Conduction Losses

Symbol Test Conditions Characteristic Values Advantages

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
z
BVCES IC = 250μA, VGE = 0V 3000 V Low Gate Drive Requirement
z
VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V High Power Density

ICES VCE = 0.8 • VCES, VGE = 0V 25 μA Applications:

TJ = 125°C 1 mA
z
IGES VCE = 0V, VGE = ± 20V ±100 nA Switched-Mode and Resonant-Mode
VCE(sat) IC = 12A, VGE = 15V, Note 1 2.8 3.2 V Power Supplies
z
Uninterruptible Power Supplies (UPS)
TJ = 125°C 3.5 V z
Laser Generators
z
Capacitor Discharge Circuits
z
AC Switches

© 2012 IXYS CORPORATION, All Rights Reserved DS100120A(10/12)

 IXBT12N300
IXBH12N300
Symbol Test Conditions Characteristic Values TO-268 Outline
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfS IC = 12A, VCE = 10V, Note 1 6.5 10.8 S
Cies 1290 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 56 pF
Cres 19 pF
Qg 62 nC
Qge IC = 12A, VGE = 15V, VCE = 1000V 13 nC
Qgc 8.5 nC Terminals: 1 - Gate 2,4 - Collector
3 - Emitter
td(on) Resistive Switching Times, TJ = 25°C 64 ns
tr 140 ns
IC = 12A, VGE = 15V
td(off) 180 ns
VCE = 1250V, RG = 10Ω
tf 540 ns

td(on) 65 ns
Resistive Switching Times, TJ = 125°C
tr 395 ns
IC = 12A, VGE = 15V
td(off) 175 ns
VCE = 1250V, RG = 10Ω
tf 530 ns

RthJC 0.78 °C/W

RthCS TO-247 0.21 °C/W

TO-247 Outline

Reverse Diode

Symbol Test Conditions Characteristic Values 1 2 3

∅P

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

VF IF = 12A, VGE = 0V 2.1 V
trr IF = 6A, VGE = 0V, -diF/dt = 100A/μs 1.4 μs
IRM VR = 100V, VGE = 0V 21 A
e

Terminals: 1 - Gate 2 - Collector

3 - Emitter

Dim. Millimeter Inches

Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b1 1.65 2.13 .065 .084
b2 2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXBT12N300
IXBH12N300

Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC

24 240
VGE = 25V VGE = 25V
20V
20 15V 200
20V

16 160
10V
IC - Amperes

IC - Amperes
15V
12 120

8 80
10V

4 40

5V 5V
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20 25 30
VCE - Volts VCE - Volts

Fig. 4. Dependence of VCE(sat) on

Fig. 3. Output Characteristics @ T J = 125ºC Junction Temperature
24 1.8
VGE = 25V
20V VGE = 15V
20 15V I C = 24A
1.6
VCE(sat) - Normalized

16 1.4
I = 12A
IC - Amperes

12 10V
1.2

8 1.0
I C = 6A

4 0.8
5V

0 0.6
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 0 25 50 75 100 125 150
VCE - Volts TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage Fig. 6. Input Admittance
6.0 40

36
5.5 TJ = 25ºC
32
5.0
28
4.5
IC - Amperes

24
VCE - Volts

4.0 20
I C = 24A
16 TJ = 125ºC
3.5
25ºC
12 - 40ºC
3.0 12A
8
2.5
4
6A
2.0 0
5 7 9 11 13 15 17 19 21 23 25 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGE - Volts VGE - Volts

© 2012 IXYS CORPORATION, All Rights Reserved

 IXBT12N300
IXBH12N300

Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode

18 36
TJ = - 40ºC
16 32

14 28
25ºC
12 24
g f s - Siemens

125ºC

IF - Amperes
10 20 TJ = 25ºC
TJ = 125ºC
8 16

6 12

4 8

2 4

0 0
0 5 10 15 20 25 30 35 40 45 0 0.5 1 1.5 2 2.5 3
IC - Amperes VF - Volts

Fig. 9. Gate Charge Fig. 10. Capacitance

16 10,000
f = 1 MHz
14 VCE = 1kV
I C = 12A
I G = 10mA
Capacitance - PicoFarads

12

1,000
10 Cies
VGE - Volts

6 Coes
100
4

2
Cres
0 10
0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40
QG - NanoCoulombs VCE - Volts

Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance
1

100

80
Z(th)JC - ºC / W
IC - Amperes

60
0.1

40

TJ = 125ºC
20 RG = 30Ω
dv / dt < 10V / ns

0 0.01
500 1000 1500 2000 2500 3000 0.00001 0.0001 0.001 0.01 0.1 1 10
VCE - Volts Pulse Width - Seconds

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
 IXBT12N300
IXBH12N300
Fig. 13. Resistive Turn-on Rise Time vs. Fig. 14. Resistive Turn-on Rise Time vs.
Junction Temperature Collector Current
600 600

RG = 10Ω , VGE = 15V RG = 10Ω , VGE = 15V

500 VCE = 1250V 500 VCE = 1250V

TJ = 125ºC
t r - Nanoseconds

400 400

t r - Nanoseconds
I C = 24A
300 300

I C = 12A
200 200

TJ = 25ºC
100 100

0 0
25 35 45 55 65 75 85 95 105 115 125 6 8 10 12 14 16 18 20 22 24
TJ - Degrees Centigrade IC - Amperes

Fig. 15. Resistive Turn-on Switching Times vs. Fig. 16. Resistive Turn-off Switching Times vs.
Gate Resistance Junction Temperature
750 150 800 200

700 tr td(on) - - - - 140 tf td(off) - - - -

TJ = 125ºC, VGE = 15V 700 RG = 10Ω, VGE = 15V 190
650 130
VCE = 1250V VCE = 1250V

t d(off) - Nanoseconds
600 120
600 180
t r - Nanoseconds

t d(on) - Nanoseconds

t f - Nanoseconds

550 110

500 I C = 24A, 12A 100 500 I C = 12A 170

450 90
400 160
400 80

350 70
300 I C = 24A 150
300 60

250 50 200 140

10 20 30 40 50 60 70 80 90 100 25 35 45 55 65 75 85 95 105 115 125
RG - Ohms TJ - Degrees Centigrade

Fig. 17. Resistive Turn-off Switching Times vs. Fig. 18. Resistive Turn-off Switching Times vs.
Collector Current Gate Resistance
1400 340 700 900

tf td(off) - - - - 650 tf td(off) - - - - 800

1200 300
RG = 10Ω, VGE = 15V TJ = 125ºC, VGE = 15V
600 700
VCE = 1250V VCE = 1250V
1000 260
t d(off) - Nanoseconds

t d(off) - Nanoseconds

550 600
t f - Nanoseconds

t f - Nanoseconds

800 220 I C = 12A

500 500

600 180 450 400

400 300
400 140 I C = 24A
350 200
TJ = 125ºC, 25ºC
200 100
300 100

0 60 250 0
6 8 10 12 14 16 18 20 22 24 10 20 30 40 50 60 70 80 90 100
IC - Amperes RG - Ohms

© 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: B_12N300(4P)06-05-12

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