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Chapter 15 Solutions Overview

This document contains solutions to problems from Chapter 15 of a semiconductor physics textbook. It provides calculations and answers related to topics like transistor characteristics, doping concentrations, breakdown voltages, and frequencies. The solutions include setting up and solving equations using parameters from diagrams and equations presented in the textbook chapter.

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water9991234
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26 views5 pages

Chapter 15 Solutions Overview

This document contains solutions to problems from Chapter 15 of a semiconductor physics textbook. It provides calculations and answers related to topics like transistor characteristics, doping concentrations, breakdown voltages, and frequencies. The solutions include setting up and solving equations using parameters from diagrams and equations presented in the textbook chapter.

Uploaded by

water9991234
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 15

By D. A. Neamen Problem Solutions


______________________________________________________________________________________

Chapter 15

15.1 See diagrams in Figure 8.29 15.6


_______________________________________ s10 7
f   5 10 9 Hz
15.2
2 L 2 10 10 4
 
V 0.60  0.15  5 GHz
R   25  _______________________________________
I 2  2010 3
_______________________________________ 15.7

15.3 (a) n po 
ni2


1.5 1010 
2

NB 8 1015
1 R min
fr  1  2.8125 10 4 cm 3
2 R min C j Rp
V 
1 10 (i) n p 0  n po exp BE 
 1

2 10  2  10 9  1  Vt 
 n p 0  
 2.39  10 Hz  23.9 MHz  V BE  Vt ln  
7
 n po 
_______________________________________  
 1014 
15.4  0.0259  ln  
4 
(a) no L  1012 cm 2  2.8125 10 
 0.5696 V
1012
(i) L  15
 10 3 cm  10  m (ii) Neglecting any recombination in the base
10 eD B n po A V 
L 10 3 IC  exp BE 
(ii)     6.667 10 11 s xB  Vt 
 d 1.5 10 7
1 1 
   
1.6 10 19 20 2.8125 10 4 0.4
(iii) f   2 10  4
 6.667  10 11
 0.5696 
 1.5 1010 Hz  15 GHz  exp 
(b)  0.0259 
1012 I C  0.640 A
(i) L  16  10  4 cm  1  m
10 (b) n p 0   0.1N B  8  1014 cm 3
L 10 4  8 1014 
(ii)     6.667 10 12 s (i) V BE  0.0259  ln  
4 
 d 1.5 10 7  2.8125 10 
(iii) f  
1 1  0.6234 V
 6.667  10 12
(ii) I C 
  
1.6 10 19 20 2.8125 10 4 0.4 
 1.5 1011 Hz  150 GHz 2 10  4
_______________________________________  0.6234 
 exp 
15.5  0.0259 
V 9 I C  5.12 A
(a)     6  10 3 V/cm
L 15  10  4 _______________________________________
(b)  d  1.5 10 7 cm/s
d
1.5 10 7
(c) f    11010 Hz
L 15 10  4
 10 GHz
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 15
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

15.8 15.10
(a) From Figure 7.15, BVBC  450 V BVCBO
(a) BVCEO 
ex 2
N N  N B  n

(b) V pt  B
 B C
2 s NC 300
(i) BVCEO   139 V

1.6 10 2 10 
19 4 2 3
10
211.7 8.85 10  14
(ii) BVCEO 
300
 81.4 V

8 10 6 10
15 14
 8 1015  3
50
6 1014 (b)
V pt  354.4 V 125
(i) BVCEO   58.0 V
3
10
(c) From Figure 7.15, BVBE  65 V (ii) BVCEO 
125
 33.9 V
3
_______________________________________ 50
_______________________________________
15.9
From the junction breakdown curve, for 15.11
BVCBO  1000 V, we need the collector doping (a) We have
concentration to be N C  21014 cm 3 .  eff   A  B   A   B
so
Depletion width into the base (neglect V bi ). 180  25 B  25   B
1/ 2 or
2 V  NC  1  155  26 B
x p   s BC   
 
 e  NB  N B  N C  which yields

 211.7 8.85 10 14 1000

  B  5.96

 
1.6 10 19  (b) We have
 B i EA  iCB
1/ 2
 2  1014  1  or
  
 5  1015  2  1014 
 5  10
15
   1  A 
 B    iCA  iCB
or  A 
x p  3.16  10 4 cm  3.16  m so
(Minimum base width) 5.96 1  25   iCA  20
Depletion width into the collector  25 
1/ 2
2 V  NB  1  which yields
x n   s BC   
N  N  N  i CA  3.23 A
 e  C  B C 
 
_______________________________________
 211.7 8.85 10 14 1000

 
1.6 10 19  15.12

 5  1015  1 
1/ 2 1 
(b) PT    I C , max  VCEQ  
  
 5  1015  2  1014  2 
 2  10 
14

1 
or 30    I C , max 60
 2 
x n  78.9 10 4 cm  78.9  m
 I C ,max  1.0 A
(Minimum collector width)
_______________________________________ VCEQ 60
RL    120 
I CQ 0.5
VCE,max  120 V
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 15
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

1 
 
We have
(c) PT    I C , max  VCEQ 200  V DS
2  ID 
100
2
30   VCEQ so we can write
2
 200  V DS  V2
 VCEQ  30 V P     V DS  DS
 100  Ron
VCEQ 30
RL    30  For T  25 C, Ron  2  .
I CQ 1 Then
VCE,max  2VCEQ  230  60 V  200  V DS  V2
   V DS  DS
(d) Same as part (b)  100  2
_______________________________________ which yields
V DS  3.92 V
15.13
The power is
V 
(a) PT  VCEQI CQ   CC   I CQ  200  3.92 
 2  P 3.92  7.69 W
 100 
10  6I CQ  I CQ  1.667 A
We then have
VCEQ 6 T (C) R on (  ) V DS (V)
P (W)
RL    3.60 
I CQ 1.667 25 2.0 3.92 7.69
(b) I C ,max  2I CQ  21.667  3.333 A 50 2.33 4.56 8.91
75 2.67 5.19 10.1
_______________________________________
100 3.0 5.83 11.3
15.14 _______________________________________
If VCC  25 V, then
15.16
V
I C max   CC 
25 (a) We have, for three devices in parallel,
 0.25 A  I C , rated
R L 100
 5  V 1.51  5
V V V
 
The power 1 .8 2 2 .2
P  I C VCE  I C VCC  I C R L  or
Now, to find the maximum power point V  3.311 V
V
 0  VCC  2 I C R L  25  I C 2100 
dP
Then, I  , so that
dI C R
which yields I 1  1.839 A
I C  0.125 A I 2  1.656 A
So I 3  1.505 A
Pmax   0.12525  0.125100 Now, P  IV , so
or P1  6.09 W
Pmax   1.56 W  PT P2  5.48 W
So maximum VCC is VCC  25 V P3  4.98 W
_______________________________________ (b) Now
 1 1 1 
15.15 V     5  V  3.882 V
V DS  1.8 3.6 2.2 
Now R on  Then
ID
I 1  2.157 A, P1  8.37 W
Power dissipated in the transistor
I 2  1.078 A, P2  4.19 W
V2
P  I DV DS  DS I 3  1.765 A, P3  6.85 W
Ron
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 15
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

15.17 15.18
(a) Let the n-drift region doping (b) In the saturation region,
concentration be N d  1014 cm 3 . I D  K n VGS  VT   0.20VGS  2
2 2

  
 1014 1015  V DS  V DD  I D R L  60  I D 10
Vbi  0.0259  ln  
 
 1.5  1010 
2 For VGS  4 V, I D  0.8 A, V DS  52 V
P  I DV DS  0.852  41.6 W
 0.516 V
For the base region, For VGS  6 V, I D  3.2 A, V DS  28 V
 2  V  V R   N d
1/ 2 P  3.228  89.6 W
 1 
x p   s bi   
 N  N  N  For VGS  8 V, transistor biased in the
e  a  a d 
nonsaturation region.

 
 211.7 8.85 10 14 0.516  200 60  V DS
 
 0.20  28  2 V DS  V DS
2

 1.6 10 19 10


 1014  
1/ 2 2
We obtain 2.0V DS  25V DS  60  0
1 
  15  14
 10  1015   V DS  3.24 V, I D  5.676 A
 10  

 P  3.245.676   18.39 W
x p  4.86  10 4 cm  4.86  m
For VGS  6 V, P  PT so transistor may
= channel length
be damaged.

 
_____________________________________
 211.7  8.85 10 14 0.516  200
xn  
 1.6 10 19 15.19
1/ 2 1  1 
 1015  1 
 (a) P    V DD   I D , max 
  14  14
 10  1015   2  2 
 10  

 
60  I 
x n  4.86 10 3 cm  48.6  m 45    D   I D, max  3 A
 2  2 
= drift region width V DD 60
(b) Assume N d  1014 cm 3 RL    20 
I D, max 3
Vbi  0.516 V
 V   I D, max 
 2  V  V R   N d  
1/ 2
(b) P   DD    

1  2   2 
x p   s bi   
 N  N  N 
e  a  a d  V V
R L  DD  10  I D, max  DD

 
 211.7 8.85 10 14 0.516  80 I D, max 10
 1.6 10 19 Then
1/ 2 V  V 
 1014  1 
 P   DD    DD 
  15  14
 10  1015   2   20 
 10  
 Or
x p  3.08  10 4 cm  3.08  m V2
45  DD
= channel length 40

 211.7 8.85 10 14 0.516  80
xn  
  V DD  42.4 V
 1.6 10 19 _______________________________________
1/ 2
 1015  1 

  14  14
 10  1015 
 10  

x n  3.08 10 3 cm  30.8  m
= drift region width
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 15
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

15.20 15.22
We have  1   2  1 . Now Case 1: Terminal 1(+), terminal 2(-), and I G
1 2 negative: this triggering was discussed in the
1  and  2  text.
1  1 1  2
so
Case 2: Terminal 1(+), terminal 2(-), and I G
 2
1   2  1  1 positive: the gate current enters the P2 region
1  1 1   2 directly so that J3 becomes forward biased.
which can be written as Electrons are injected from N2 and diffuse into
 1   2    2 1   1  N1, lowering the potential of N1. The junction
1 1
1   1 1   2  J2 becomes more forward biased, and the
increased current triggers the SCR so that
or
P2N1P1N4 turns on.
1  1 1   2   1 1   2    2 1  1 
Expanding, we find Case 3: Terminal 1(-), terminal 2(+), and I G
1  1   2  1  2 positive: the gate current enters the P2 region
 1  1  2   2  1  2 directly so that the J3 junction becomes more
which yields forward biased. More electrons are injected
1  2  1 from N2 into N1 so that J1 also becomes more
forward biased. The increased current triggers
_______________________________________
the P1N1P2N2 device into its conducting state.
15.21
The reverse-biased p-well to substrate junction Case 4: Terminal 1(-), terminal 2(+), and I G
corresponds to the J 2 junction in an SCR. The negative: in this case, the J4 junction becomes
forward biased. Electrons are injected from N3
photocurrent generated in this junction will be
and diffuse into N1. The potential of N1 is
similar to the avalanche generated current in an
lowered which increases the forward biased
SCR, which can trigger the device.
potential of J1. This increased current then
_______________________________________
triggers the P1N1P2N2 device into its
conducting state.
_______________________________________

Common questions

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The breakdown mechanism in a semiconductor device, such as avalanche breakdown in diodes or transistors, occurs when the reverse bias voltage across a junction exceeds a critical value, causing a rapid increase in current due to carrier multiplication. This not only limits the maximum reverse voltage the device can handle but also risks damaging the device if breakdown occurs excessively. Design considerations must ensure that operational voltages are well below this threshold to prevent breakdown-triggered device failure, thereby maintaining device reliability .

The breakdown voltage in semiconductor devices is strongly influenced by the doping concentration of the collector. For instance, a collector doping concentration of approximately 2 x 10^14 cm^-3 is required for a collector-base breakdown voltage (V_{CBO}) of 1000 V . This illustrates that a higher doping concentration typically reduces the breakdown voltage because it increases the electric field intensity, leading to an earlier onset of breakdown.

In a PN junction diode, particularly in a bipolar junction transistor (BJT) operating in active mode, the collector current (I_C) is exponentially related to the base-emitter voltage (V_BE). A small increase in V_BE can cause a significant rise in I_C because I_C ≈ I_S exp(V_BE/V_T), where I_S is the saturation current and V_T is the thermal voltage . This demonstrates that the diode current is very sensitive to changes in V_BE, which is a critical consideration when designing amplifiers.

In the saturation region, a MOSFET's current is predominantly governed by the gate-source voltage (V_GS) and relatively independent of the drain-source voltage (V_DS). Increasing V_GS enhances the charge carriers in the channel, thus increasing the drain current (I_D). Load resistance primarily influences the voltage drop across the load, affecting the operating point but not significantly altering I_D within the saturation region, where V_DS > V_GS - V_T . However, higher load resistances can enhance voltage gain, while lower resistances maximize current capacity, demonstrating a trade-off based on application needs.

The frequency response of a bipolar junction transistor (BJT) is affected by parameters such as the base resistance (r) and the junction capacitance (C). The cutoff frequency (f_t), which is a critical factor in defining the upper frequency limit of the BJT, is inversely proportional to the product of the base resistance and the junction capacitance (C_j), as given by f_t = 1/(2πrC_j). This implies that reducing the resistance and capacitance can significantly extend the frequency range, enhancing performance in high-frequency applications.

The switching speed of a transistor is significantly affected by the collector junction capacitance (C_j). Higher collector capacitance leads to increased charge storage at the junction, which in turn slows down the switching process as more time is required to charge or discharge this capacitance during transition states. This effect ultimately limits the operating speed of the transistor as determined by the RC time constant, τ = RC_j, where R is the load resistance . Thus, minimizing C_j is key to achieving higher switching speeds in high-frequency applications.

Junction recombination in bipolar junction transistors leads to reduced carrier injection efficiency, impacting the current gain (β) of the device. Recombination in the base, where minority carriers recombine with majority carriers, results in a loss of carriers available for collection by the collector. This diminishes the base current efficiency, as fewer carriers reach the collector per unit of base current, effectively reducing β and the overall transistor efficiency . Minimizing recombination through optimizations such as adjusting the base width and doping profiles is crucial to enhancing transistor performance.

An increase in the threshold voltage (V_T) of a MOS transistor results in a decrease in the drain current (I_D) for a given gate-source voltage (V_GS), especially when operating in the subthreshold region. I_D is expressed as I_D = K(V_GS - V_T)^2 under saturation conditions, indicating that a higher V_T reduces the effective V_GS - V_T, thus leading to lower I_D . Consequently, increasing V_T can degrade the switching speed and reduce the device's drive capability, impacting overall performance.

MOSFETs generally have lower power dissipation compared to BJTs due to their voltage-driven nature rather than current-driven operation. A MOSFET can be completely on or off with minimal gate current, reducing power consumption significantly, especially in the off state. Conversely, BJTs require continuous base current to remain on, leading to higher static power dissipation . However, BJTs can handle higher breakdown voltages and remain functional under higher currents, offering an advantage in certain high-power applications, despite the increased power dissipation.

The power dissipation (P) in a bipolar junction transistor is influenced by the current gain (β). The relation P = V_CE I_C illustrates that power dissipation is directly related to the collector-emitter voltage (V_CE) and the collector current (I_C), which itself depends on the base current (I_B) and the current gain (I_C = β I_B). Therefore, higher current gain can lead to increased collector current and thus higher power dissipation, imposing thermal management constraints in high-gain designs.

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