Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 10

By D. A. Neamen Problem Solutions

______________________________________________________________________________________

Chapter 10
10.1
x dT  

 411.7  8.85  10 14 0.3173   1/ 2

  

(a) p-type; inversion
(b) p-type; depletion  1.6  10 19 7  10 15 
(c) p-type; accumulation 5
 3.43 10 cm
(d) n-type; inversion or x dT  0.343  m
_______________________________________
 3 1016 
(ii)  fp  0.03022 ln  
11 
 1.93 10 
10.2
N   0.3613 V
(a) (i)  fp  Vt ln  a 
 ni 
x dT  

 411.7  8.85  10 14 0.3613   1/ 2

 7 1015 
 0.0259 ln    
1.6  10 19 3  10 16 
 
10 
 1.5 10   1.77 10 cm 5

 0.3381 V or x dT  0.177  m
 4 s  fp 
1/ 2
_______________________________________
x dT  
 eN a 
10.3

 
 411.7  8.85  10 14 0.3381 
1/ 2
 4 s  fn 
1/ 2

 
1.6  10 19 7  10 15

 (a)  max   eN d x dT
Q SD  eN d  
   eN d 
 3.54 10 5 cm
or x dT  0.354  m  
 eN d  4 s  fn  1/ 2

 3 1016  1st approximation: Let  fn  0.30 V

(ii)  fp  0.0259 ln  
10 
 1.5 10  Then
 0.3758 V 1.25 10  8 2

x dT  
 
 411.7  8.85  10 14 0.3758 
1/ 2
 1.6 10 N 411.78.85 10 0.30
19 14

  

d
 1.6  10 19 3  10 16   N d  7.86 1014 cm 3
5
 1.80 10 cm 2nd approximation:
or x dT  0.180  m  7.86 1014 
 fn  0.0259 ln  10 
  0.2814 V
 350   1.5 10 
(b) kT  0.0259   0.03022 V
 300  Then
  Eg 
ni2  N c N  exp  1.25 10  8 2

 1.6 10 N 411.78.85 10 0.2814

 19 14
 kT  d

  
3
 350   N d  8.38 1014 cm 3
 2.8 1019 1.04 1019  
 300   8.38 1014 
(b)  fn  0.0259 ln  10 
  0.2831 V
  1.12   1.5 10 
 exp 
 0.03022   s  2 fn  20.2831  0.566 V
 3.7110 22 _______________________________________
so ni  1.93 1011 cm 3
 7 1015 
(i)  fp  0.03022 ln  
11 
 1.93 10 
 0.3173 V
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 10
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

10.4 10.7
p-type silicon From Problem 10.5,  ms  0.9932 V
(a) Aluminum gate Q
  Eg  V FB   ms  ss
 ms   m        fp  C ox
  2e 
(a) C ox  

ox 3.9 8.85 10 14 
We have t ox 200 10 8
N 
 fp  Vt ln  a   1.726 10 7 F/cm 2
 ni 
V FB  0.9932 
 
5 1010 1.6 10 19 
 6 1015  1.726 10 7
 0.0259 ln  10 
  0.334 V
 1.5 10   1.040 V
Then
(b) C ox 

3.9 8.85 10 14 
 ms  3.20  3.25  0.56  0.334 80 10 8
or  4.314 10 7 F/cm 2
 ms  0.944 V
V FB  0.9932 
 
5 1010 1.6 10 19 
(b) n  polysilicon gate 4.314 10 7
 Eg   1.012 V
 ms     fp   0.56  0.334  _______________________________________
 2e 
or 10.8
 ms  0.894 V (a)  ms  0.42 V
(c) p  polysilicon gate V FB   ms  0.42 V
 Eg  (b)
    fp   0.56  0.334
 ms
 2e  C ox 
3.98.85 10 14   1.726 10 7 F/cm 2
or 200 10 8
 ms  0.226 V Q
(i) V FB   ss  
 
4 1010 1.6 10 19 
_______________________________________ C ox 1.726 10 7
 0.0371 V
10.5
 4 1016  (ii) V FB  
 
1011 1.6 10 19 
 fp  0.0259 ln  10 
  0.3832 V 1.726 10  7
 1.5 10   0.0927 V
 Eg  (c) V FB   ms  0.42 V
 ms   m        fp 
 2e  C ox 
3.98.85 10 14   2.876 10 7 F/cm 2
 3.20  3.25  0.56  0.3832 120 10 8
 ms  0.9932 V (i) V FB  
 
4 1010 1.6 10 19 
_______________________________________ 2.876 10 7
 0.0223 V
10.6
(ii) V FB  
 
1011 1.6 10 19 
(a) N d  21017 cm 3 2.876 10  7
(b) Not possible -  ms is always positive.  0.0556 V
_______________________________________
(c) N d  21015 cm 3
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 10
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

10.9  max   Q ss

Q SD
 Eg  VTN    ms  2 fp
 ms   m        fp  C ox
 2e 


6.958 10 8  7 1010 1.6 10 19  
where
2.30110 7
 fp  0.0259 ln 
 2 1016 
  0.365 V   ms  20.3653
10 
 1.5 10   0.9843   ms
Then (a) n  poly gate on p-type:  ms  1.12 V
 ms  3.20  3.25  0.56  0.365
VTN  0.9843  1.12  0.136 V
or
 ms  0.975 V (b) p 
poly gate on p-type:  ms  0.28 V
Now VTN  0.9843  0.28  1.26 V
Q (c) Al gate on p-type:  ms  0.95 V
V FB   ms  ss
C ox VTN  0.9843  0.95  0.0343 V
or _______________________________________
Q ss   ms  V FB C ox
We have 10.11

C ox  ox 

3.9 8.85 10 14   fn  0.0259 ln 
 3 1015 
  0.3161 V
10 
t ox 450 10 8  1.5 10 
or


 411.7  8.85  10 14 0.3161   1/ 2

C ox  7.67 10 8 F/cm 2

  

x dT
 1.6  10 19 3  1015 
So now
 
5
 5.223 10 cm
Qss   0.975   1 7.67 10 8
 max   eN d x dT
QSD
 1.92 10 9 C/cm 2
or  
 1.6 10 19 3 1015 5.223 10 5  
Q ss  2.507 10 C/cm 8 2
 1.2  10 10 cm 2
e
C ox 
 
3.9 8.85 10 14  2.30110 7 F/cm 2
_______________________________________ 150 10 8
10.10  max   Q ss 
 Q SD
VTP       ms  2 fn
 2 1016   C ox 
 fp  0.0259 ln    0.3653 V
10 
 1.5 10  
 2.507 10 8  1.6 10 19 7 1010 
 
 

x dT  

 411.7  8.85  10 14 0.3653   1/ 2
 2.30110 7 
 
1.6  10 19 2  10 16

    ms  20.3161
5 VTP  0.7898   ms
 2.174 10 cm
 max   eN a x dT
QSD (a) n  poly gate on n-type:  ms  0.41 V

 
 1.6 10 19 2 1016 2.174 10 5   VTP  0.7898  0.41  1.20 V
8 (b) p  poly gate on n-type:  ms  1.0 V
 6.958 10 C/cm 2

C ox 
 
3.9 8.85 10 14  2.30110 7 F/cm 2 VTP  0.7898  1.0  0.210 V
150 10 8 (c) Al gate on n-type:  ms  0.29 V
VTP  0.7898  0.29  1.08 V
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 10
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

10.12 Now
 5 1015   4 1016 
 fp  0.0259 ln    0.3294 V
10 
 fp  0.0259 ln  
10 
 1.5 10   1.5 10 
The surface potential is  0.3832 V
 s  2 fp  20.3294  0.659 V 
 411.7  8.85  10 14 0.3832    1/ 2


  

We have x dT
 1.6  10 19 4  1016 
Q
V FB   ms  ss  0.90 V  1.575 10 cm 5
C ox
 max 
QSD
Now

VT 
 max 
Q SD
  s  V FB
 
 1.6 10 19 4 1016 1.575 10 5  
7
C ox  1.008 10 C/cm 2
We obtain  ms  0.94 V
 4 s  fp 
1/ 2
Then
x dT     max   Q ss
Q SD
 eN a  VTN    ms  2 fp
 
C ox
 411.7  8.85  10 0.3294  
1/ 2
14
 1.008 10 7  6.4 10 9
 
1.6  10 19 5  10 15 
  
1.569 10 7
 0.94  20.3832
or
x dT  0.413 10 4 cm
Then VTN  0.428 V  0.45 V
Then
 
 max   1.6  10 19 5  1015 0.413  10 4
Q SD   _______________________________________

or 10.14
 max   3.304  10 8 C/cm 2
Q SD
C ox  

ox 3.9 8.85 10 14 
We also find t ox 180 10 8

C ox  ox 

3.9 8.85 10 14   1.9175 10 7 F/cm 3
t ox 400 10 8 
Qss  1.6 10 19 4 1010  
or 9
 6.4  10 C/cm 2

C ox  8.629 10 8 F/cm 2

By trial and error, let N d  51016 cm 3
Then
Now
3.304 10 8
VT   0.659  0.90  5 1016 
8.629 10 8  fn  0.0259 ln  
10 
or  1.5 10 
VT  0.142 V  0.3890 V
_______________________________________
x dT  

 411.7  8.85  10 14 0.3890    1/ 2

10.13  
1.6  10 19 5  1016 
 
C ox 

ox 3.9 8.85 10 14

  1.419 10 cm 5

t ox 220 10 8 QSD max 



 1.569 10 7 F/cm 2  

 1.6 10 19 5 1016 1.419 10 5  

Qss  1.6 10 19
4 10  10
 1.135 10 C/cm 7 3

 6.4  10 9 C/cm 2  ms  1.10 V

Then
By trial and error, let N a  41016 cm 3 .
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 10
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

 Q  max   Q   Now
VTP     ms  2 fn
SD ss
Q ss
C ox V FB   ms 
1.135 10 7
 6.4 10 9  C ox

1.9175 10 7  1.03 
1.6 10 6 10 
19 10

 1.10  20.3890
7
1.9175 10
V FB  1.08 V
Then VTP  0.303 V, which is within the
 1015 
specified value. (b)  fp  0.0259 ln  
10 
_______________________________________  1.5 10 
 0.2877 V
10.15
We have C ox  1.569 10 7 F/cm 2 x dT  

 411.7  8.85  10 14 0.2877    1/ 2

Qss  6.4 10 9 C/cm 2  

1.6  10 19 10 15  


 8.630 10 5 cm
By trial and error, let N d  51014 cm 3
 max 
QSD
Now
 5 1014    
 1.6 10 19 1015 8.630 10 5 
 fn  0.0259 ln  
10  8
 1.5 10   1.38110 C/cm 2

 0.2697 V Now
 max 


 411.7  8.85  10 14 0.2697    1/ 2
VTN 
Q SD
 V FB  2 fp
  

x dT C ox
 1.6  10 19 5  10 14 
1.38110 8
 1.182 10 cm 4
  1.08  20.2877 
1.9175 10 7
 max 
QSD
or VTN  0.433 V
 
 1.6 10 19 5 1014 1.182 10 4   _______________________________________
9
 9.456 10 C/cm 2

 ms  0.33 V 10.17
(a) We have n-type material under the gate, so
Then
 Q  max   Q    4 s  fn 
1/ 2

x dT  t C   
VTP     ms  2 fn
SD ss

C ox  eN d 
where
 9.456 10 9  6.4 10 9 
    1015 
 1.569 10 7 
  fn  0.0259 ln    0.288 V
10 
 1.5 10 
 0.33  20.2697 
Then
 0.970 V
Then VTP  0.970 V  0.975 V which x dT  

 411.7  8.85  10 14 0.288   1/ 2

meets the specification.  

1.6  10 19 10 15  


_______________________________________ or
x dT  t C  0.863 10 4 cm  0.863  m
10.16
(b)
(a)  ms  1.03 V
t 
3.98.85 10 14  VT   QSD  max   Qss  ox    ms  2 fn
C ox   ox 
180 10 8
For an n  polysilicon gate,
 1.9175 10 7 F/cm 2
Eg 
 ms     fn   0.56  0.288
 2e 
 
or
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 10
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

 ms  0.272 V
VT 
4.797 10 300 10 
8 8

Now 3.98.85 10  14

  
 max   1.6  10 19 1015 0.863  10 4
Q SD   1.107  20.3473
or or
 max   1.38  10 8 C/cm 2
Q SD VT  0.00455 V  0 V
We have _______________________________________
  
Qss  1.6 10 19 1010  1.6 10 9 C/cm 2
10.19
We now find
 
Plot
 1.38 10 8  1.6 10 9
VT  500 10 8  _______________________________________

3.9 8.85 10 14

 0.272  20.288 10.20
Plot
or _______________________________________
VT  1.07 V
_______________________________________ 10.21
Plot
10.18 _______________________________________
 Eg 
(b)  ms   m        fp  10.22
 2e  Plot
where _______________________________________
 m     0.20 V
and 10.23
 1016  (a) For f  1 Hz (low freq),
 fp  0.0259 ln    0.3473 V
10 
 1.5 10  C ox  

ox 3.9 8.85 10 14 
Then t ox 120 10 8
 ms  0.20  0.56  0.3473  2.876 10 7 F/cm 2
or ox
 ms  1.107 V  
C FB
  V 
(c) For Q ss  0 t ox   ox  t s
 s  eN a
t 
 max   ox    ms  2 fp
VTN  QSD 
3.98.85 10 14 
 ox 
 3.9  0.0259 11.7 8.85  10 
14
120  10 8   
We find
 11.7  1.6 10 10 
19 16


 14

 411.7  8.85  10 0.3473 
1/ 2

  1.346 10 7 F/cm 2

   
x dT C FB
 1.6  10 19 10 16 
ox
or  
C min
 
x dT  0.30 10 4 cm  0.30  m t ox   ox   x dT
Now  s 
 
 max   1.6  10 19 1016 0.30  10 4
Q SD   Now
 1016 
or  fp  0.0259 ln    0.3473 V
10 
 max   4.797  10 8 C/cm 2
Q SD  1.5 10 
Then


 411.7  8.85  10 14 0.3473  1/ 2

   
x dT
 1.6  10 19 10 16 
5
 3.00 10 cm
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 10
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

Then

 411.7  8.85  10 14 0.2697    1/ 2

 
3.98.85 10 14
 x dT 

1.6  10 19 5  10 14  

C min  
 3. 9 
120  10 8   
 3.00  10
5
  1.182 10 cm 4
 11 . 7 
Then
 3.083 10 8 F/cm 2
 
C min
3.98.85 10 14 
C  (inv)  C ox  2.876 10 7 F/cm 2
(b) f  1 MHz (high freq),
 3.9 
120  10 8    1.182  10
4
 
 11.7 
C ox  2.876 10 7 F/cm 2 (unchanged)  8.504 10 9 F/cm 2
  1.346 10 F/cm
C FB 7 2
(unchanged) C  (inv)  C ox  2.876 10 7 F/cm 2
  3.083 10 8 F/cm 2 (unchanged)
C min (b) f  1 MHz (high freq),
  3.083 10 8 F/cm 2
C  (inv)  C min C ox  2.876 10 7 F/cm 2 (unchanged)
(c) V FB   ms  1.10 V   4.726 10 8 F/cm 2 (unchanged)
C FB
 max 
Q SD   8.504 10 9 F/cm 2 (unchanged)
C min
VTN   V FB  2 fp
C ox   8.504 10 9 F/cm 2
C  (inv)  C min
Now (c) V FB   ms  0.95 V
 max   eN a x dT
 max 
QSD
Q SD
  
 1.6 10 19 1016 3.00 10 5  VTP  
C ox
 V FB  2 fn
8
 4.80 10 C/cm 2
Now
4.80 10 8  max   eN d x dT
VTN   1.10  20.3473 QSD
2.876 10 7
VTN  0.2385 V
 
 1.6 10 19 5 1014 1.182 10 4  
9
 9.456 10 C/cm 2
_______________________________________
Then
9.456 10 9
10.24 VTP    0.95  20.2697 
(a) f  1 Hz (low freq), 2.876 10  7

C ox  

ox 3.9 8.85 10 14  VTP  0.378 V
t ox 120 10 8 _______________________________________

 2.876 10 7 F/cm 2 10.25

ox The amount of fixed oxide charge at x is
 
C FB
  V   x x C/cm 2
t ox   ox  t s
 s  eN a
By lever action, the effect of this oxide charge
3.98.85 10 14 
on the flatband voltage is
 1  x 
   x x
 3.9  0.0259 11.7 8.85  10  V FB  
14
120  10 8    C ox  t ox 
 11.7  1.6 10 5 10 
19 14
If we add the effect at each point, we must
  4.726 10 8 F/cm 2
C FB integrate so that
x x 
t ox
ox

1
 
C min V FB   dx
  C ox t ox
t ox   ox   x dT 0

 s  _______________________________________
Now
 5 1014 
 fn  0.0259 ln    0.2697 V
10 
 1.5 10 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 10
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

10.26
QSS
1
t ox  O  QSS   O 
b
2 1.6  10
19
gb8  10 g 10

(a) We have  x   2 200  10

8

t
or  O  1.28  10
2

Then
Now
x x 
z
t ox
1
VFB   dx t ox

z F
G xI
Ht J
1 1
Cox t ox VFB    x  O
F
0

IJF I Cox t ox Kdx

z
t ox
QSS 0 ox


1
G
b gHK HK
t ox

af z
t ox
dx 1 O
Cox t ox  t t ox t  
2
x dx
2

FQ I t  at  t f   Q
1
Cox t ox 0

C H t K
 SS
ox ox
SS
which becomes
C
O t ox
 O t ox
3 2
ox ox
1 x
VFB     
or
Ft I F
G I af
J t 3 3
2
0

Ht K
ox ox

 Q G J
ox

VFB
H K
ox
SS ox
ox
Then
b1.6  10 g b8  10 gb200  10 g b

19 10 8

1.28  10 g b200  10 g 2 8 2

3.9b8.85  10 g
14 VFB 
33.9b8.85  10 g
14

or
or V FB  0.0494 V
VFB  0.0742 V
_______________________________________
(b) 10.27
We have Sketch

 x  
QSS

b1.6  10 gb8  10 g 19 10
_______________________________________
8
t ox 200  10
10.28
 6.4  10   O
3
Sketch
_______________________________________
Now
x x 
z z
t ox t ox
1  10.29
VFB   dx   O xdx
Cox t ox Cox t ox (b)
0 0
N N 
or V FB  Vbi  Vt ln  a 2 d 

 O t ox  ni 
2

VFB  
2 ox
 0.0259  ln 
  
 1016 1016 

b
 6.4  10 gb200  10 g 3 8 2

 1.5  1010 
2


23.9 b
8.85  10 g
14 or
V FB  0.695 V
or
(c) Apply VG  3 V, Vox  3 V
VFB  0.0371 V
(c)
For VG  3 V,
Fx I
 x    GJ d 
Ht K O
ox dx

s
We find n-side:   eN d
d eN eN x
  d     d  C1
dx s s
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 10
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
have
eN d x n
  0 at x   x n , then C1   2Vn  Vox  Vbi
s
so which can be written as
eN eN d x n2 eN d x n t ox
   d x  x n  for  x n  x  0   Vbi
s s s
In the oxide,   0 , so or
d
V 
 0    constant. From the x n2  x n t ox  bi s  0
dx eN d
boundary conditions, in the oxide Solving for x n , we obtain
eN x 2
 d n t t   V
s x n   ox   ox   s bi
2  2  eN d
In the p-region,
d  eN a eN a x If we apply a voltage V G , then replace V bi by
    C2 Vbi  VG , so
dx s s s

  0 at x  t ox  x p , then  t ox  t   V  VG 
2

xn  x p     ox   s bi

eN a
s
t ox  xp  x  2  2  eN d
We find
eN a x p eN d x n 500  10 8
At x  t ox ,     xn  x p  
s s 2
So that N a x p  N d x n  500 10 8 
   
2

11.7 8.85 10 14 3.695 
Since N a  N d , then x n  x p  2 
 
1.6 10 19 1016  
The potential is which yields

   dx x n  x p  4.646  10 5 cm
For zero bias, we can write Now
Vn  Vox  V p  Vbi V ox 
eN d x n t ox
where Vn , Vox , V p are the voltage drops s
across

1.6 10 10 4.646 10 500 10 
19 16 5 8

the n-region, the oxide, and the p-region, 11.78.85 10  14

respectively. For the oxide: or

eN d x n t ox Vox  0.359 V
V ox    t ox 
s We also find
For the n-region: eN d x n2
eN d  x 2  Vn  V p 
Vn x   
  x n  x   C  2 s
s  2 

1.6 10 10 4.646 10 
19 16 5 2

211.7 8.85 10 

Arbitrarily, set V n  0 at x   x n , then 14

eN d x n2
C  so that or
2 s Vn  V p  1.67 V
eN d
V n x    x  x n 2 _______________________________________
2 s
10.30
eN d x n2 (a) n-type
At x  0 , V n  which is the voltage
2 s (b) We have
drop across the n-region. Because of 200 10 12
C ox   110 7 F/cm 2
symmetry, Vn  V p . Then for zero bias, we 2 10 3
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 10
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
Also

C ox 
ox 
 t ox  ox 

3.9 8.85 10 14  
Qn  C ox  VGS  V DS 
t ox C ox 110 7 
or  max   Q ss
 Q SD  
6
o    ms  2 fp  
t ox  3.45 10 cm  34.5 nm  345 A
 C ox  

(c)
Using the definition of threshold voltage VT ,
Q
V FB   ms  ss we have
C ox Qn  C ox VGS  V DS   VT 
or At saturation
Q V DS  V DS sat   VGS  VT
 0.80  0.50  ss 7
10 which then makes Q n equal to zero at the
which yields
drain terminal.
Qss  3 10 8 C/cm 2  1.875 1011 cm 2 _______________________________________
(d)
ox 10.33
 
C FB
k n W
    kT  s 
t ox   ox    
(a) I D   
2VGS  VT V DS  V DS
2

 2 L
 s   e  eN d 
   
 3.9 8.85 10 14  3.45 10 6 
 0.18 
 2 

8 20.8  0.40.2  0.2
2

 3.9 

0.025911.7 8.85 10 14    0.0864 mA

 11.7  1.6 10 2 10 
19 16

k W
(b) I D  n  VGS  VT 
2

2 L
which yields
 0.18 
 80.8  0.4
2
  7.82 10 8 F/cm 2
C FB
 2 
or
 0.1152 mA
C FB  156 pF
(c) Same as (b), I D  0.1152 mA
_______________________________________
k W
(d) I D  n  VGS  VT 
2

10.31 2 L
(a) Point 1: Inversion  0.18 
 81.2  0.4
2
2: Threshold
3: Depletion  2 
4: Flat-band  0.4608 mA
5: Accumulation _______________________________________
_______________________________________
10.34
k p W
10.32
We have
(a) I D 
2 L
 
2V SG  VT V SD  V SD
2

 
Qn  Cox VGS  Vx    ms  2 fp 
 Q ss  Q SD
 max 
 0.10 

 2 

15 20.8  0.40.25  0.25
2

Now let V x  V DS , so I D  0.103 mA
 k p W
Qn  C ox VGS  V DS  (b) I D   V SG  VT 
2

 2 L
 max   Q ss
 Q SD   0.10 
    150.8  0.4
2
   ms  2 fp
 C ox    2 

 0.12 mA
 max  is a
For a p-type substrate, Q SD
negative value, so we can write
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 10
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

k p W 10.37
 V SG  VT 
(c) I D 
3.98.85 10 14   3.138 10 7 F/cm 2
2

2 L C ox 
 0.10  110 10 8
151.2  0.4

 
2

 2   C W 425 3.138  10 7 20

K n  n ox 
 0.48 mA 2L 21.2
(d) Same as (c), I D  0.48 mA  1.11110 3 A/V 2 =1.111 mA/V 2
_______________________________________ (a) VGS  0 , I D  0
VGS  0.6 V, V DS sat   0.15 V,
10.35
k W I D sat   1.1110.6  0.452
(a) I D  n  VGS  VT 
2

2 L  0.025 mA
VGS  1.2 V, V DS sat   0.75 V,
 0.6  W 
1.0    1.4  0.8
2
I D sat   1.1111.2  0.45
2
 2  L 
W  0.625 mA

L
 9.26 VGS  1.8 V, V DS sat   1.35 V,
I D sat   1.1111.8  0.45
2
 0.6 
(b) I D   9.261.85  0.8
2

 2   2.025 mA
 3.06 mA VGS  2.4 V, V DS sat   1.95 V,
k W I D sat   1.1112.4  0.45
 
2
(c) I D  n  2VGS  VT V DS  V DS
2

2 L  4.225 mA

 0.6 
 2 

9.26 21.2  0.80.15  0.15
2
 (c) I D  0 for VGS  0.45 V
VGS  0.6 V,
 0.271 mA
_______________________________________

I D  1.111 20.6  0.450.1  0.1
2

 0.0222 mA
10.36 VGS  1.2 V,
(a) Assume biased in saturation region 
I D  1.111 21.2  0.450.1  0.1
2

k p W  0.156 mA
ID   V SG  VT 
2

2 L VGS  1.8 V,

0.10  
 0.12 
200  VT 
2 
I D  1.111 21.8  0.450.1  0.1
2

 2   0.289 mA
 VT  0.289 V VGS  2.4 V,
Note: V SD  1.0 V  V SG  VT  0  0.289 V 
I D  1.111 22.4  0.450.1  0.1
2

So the transistor is biased in the saturation  0.422 mA
region. _______________________________________
 0.12 
(b) I D   200.4  0.289
2

 2  10.38
 0.570 mA
C ox  

ox 3.9 8.85 10 14 
 0.12  t ox 110 10 8
(c) I D   2020.6  0.2890.15
 2   3.138 10 7 F/cm 2
 0.15
2
 Kp 
 p C ox W
or 2L
I D  0.293 mA


210 3.138 10 7 35 
_______________________________________ 21.2
 9.6110 4 A/V 2 =0.961 mA/V 2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 10
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(a) V SG  0 , I D  0 10.40
V SG  0.6 V, V SD sat   0.25 V Sketch
_______________________________________
I D sat   0.9610.6  0.35
2

 0.060 mA 10.41
V SG  1.2 V, V SD sat   0.85 V Sketch
_______________________________________
I D sat   0.9611.2  0.35
2

 0.694 mA 10.42
V SG  1.8 V, V SD sat   1.45 V We have
V DS sat   VGS  VT  V DS  VT
I D sat   0.9611.8  0.35
2

so that
 2.02 mA
V DS  V DS sat   VT
V SG  2.4 V, V SD sat   2.05 V
Since V DS  V DS sat  , the transistor is always
I D sat   0.9612.4  0.35
2
biased in the saturation region. Then
 4.04 mA
I D  K n VGS  VT 
2

(c) I D  0 for V SG  0.35 V

where, from Problem 10.37,
V SG  0.6 V
K n  1.111 mA/V 2 and VT  0.45 V

I D  0.961 20.6  0.350.1  0.1
2
 Then
 0.0384 mA V DS  VGS I D (mA)
V SG  1.2 V 0 0

I D  0.961 21.2  0.350.1  0.1
2
 1
2
0.336
2.67
 0.154 mA
3 7.22
V SG  1.8 V
 
4 14.0
I D  0.961 21.8  0.350.1  0.1
2
5 23.0
 0.269 mA _______________________________________
V SG  2.4 V
 
10.43
I D  0.961 22.4  0.350.1  0.1
2
From Problem 10.38, K p  0.961 mA/V 2
 0.384 mA
_______________________________________ 
I D  K p 2V SG  VT V SD   V SD
2

I D
10.39 gd   2K p VSG  VT 
VSD VSD 0
(a) From Problem 10.37, K n  1.111 mA/V 2
For V SG  0.35 V, g d  0
For VGS  0.8 V, I D  0
For V SG  0.35 V,
VGS  0 , V DS sat   0.8 V
g d  20.961V SG  0.35
I D sat   1.1110  0.8
2
For V SG  2.4 V,
 0.711 mA g d  20.9612.4  0.35
VGS  0.8 V, V DS sat   1.6 V
 3.94 mA/V
I D sat   1.1110.8  0.8
2
_______________________________________
 2.84 mA
VGS  1.6 V, V DS sat   2.4 V
I D sat   1.1111.6  0.8
2

 6.40 mA
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 10
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

10.44 (b)
I D I D sat   K n VGS  VT   K nV DS sat 
2 2
(a) g m 
V GS so
2 10 4  K n 4

  
2
 K n 2VGS  VT V DS   V DS
2

VGS which yields

 K n 2V DS  K n  12.5  A/V 2
1.25  K n 20.05 (c)
V DS sat   VGS  VT  2  0.8  1.2 V
 K n  12.5 mA/V 2
so V DS  V DS sat 
(b) I D  12.520.8  0.30.05 0.05
2
  
I D sat   1.25 10 5 2  0.8
2
 0.594 mA
(c) I D  12.50.8  0.3
2 or
I D sat   18  A
 3.125 mA
(d)
V DS  V DS sat 
_______________________________________

10.45 
I D  K n 2VGS  VT V DS  V DS
2

We find that VT  0.2 V  
 1.25 10 5 23  0.81  1
2

Now or
W n C ox I D  42.5  A
I D sat    VGS  VT 
2L _______________________________________
where

ox 3.9 8.85 10 14  10.47
C ox 
t ox

425 10 8 (a) C ox 
3.98.85 10 14 
or 180 10 8
C ox  8.12 10 8 F/cm 2  1.9175 10 7 F/cm 2
We are given W L  10 . From the graph, for 
(i) k n   n C ox  450 1.9175 10 7 
5
VGS  3 V, we have  8.629 10 A/V 2

I D sat   0.033 , or k n  86.29  A/V 2

 k   W 
then (ii) I D sat    n  VGS  VT 
2

W n C ox  2  L 
0.033   3  0.2
 0.08629  W 
 2  0.4
2L
0.8  
2
or  2  L 
W n C ox
 0.139 10 3 
W
 7.24
2L L
or

(b) (i) k p   p C ox  210  1.9175  10 7 
1
2
 
10 n 8.12 10 8  0.139 10 3  4.027 10 A/V 5 2

which yields or k p  40.27  A/V 2

 n  342 cm 2 /V-s  k p  W 
(ii) I D sat     VSG  VT 
2
_______________________________________
  
2 L
 0.04027  W 
 2  0.4
10.46
0.8  
2
(a)  2  
L
V DS sat   VGS  VT
W
or   15.5
L
4  VGS  0.8  VGS  4.8 V
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 10
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
_______________________________________  1.135 10 7 C/cm 2

10.48  max 
Q SD
From Problem 10.37, K n  1.111 mA/V 2 VTO   V FB  2 fp
C ox
(a) g mL 

 
K n 2VGS  VT V DS   V DS
2
 1.135 10 7
VGS   0.5  20.3890
2.30110 7
 K n 2V DS   1.11120.1
 0.7713 V
so g mL  0.222 mA/V  C W
K n  n ox
(b) g ms 


K n VGS  VT 
2
 2L
VGS

 
450  2.301  10 7 8 
 2 K n VGS  VT   21.1111.5  0.45 21.2 
so g ms  2.33 mA/V  3.452 10 4 A/V 2
_______________________________________ or K n  0.3452 mA/V 2

10.49 For I D  0 , VGS  VTO  0.7713 V

For I D  0.5  0.3452VGS  0.7713
2
From Problem 10.38, K p  0.961 mA/V 2
 VGS  1.975 V
(a) g mL 

V SG
 
K p 2V SG  VT V SD   V SD
2
 (c) (i) For V SB  0 , VT  VTO  0.7713 V
 K p 2VSD   0.96120.1 (ii) V SB  1 V,
or g mL  0.192 mA/V 
VT  0.5594 20.389  1

(b) g ms 


K p V SG  VT 
2
  20.389 
V SG  0.2525 V
 2K p VSG  VT   20.9611.5  0.35 VT  0.7713  0.2525  1.024 V
or g ms  2.21 mA/V (iii) V SB  2 V,
_______________________________________ VT  0.5594 20.389  2
10.50  20.389 
2e s N a  0.4390 V
(a)  
C ox VT  0.7713  0.4390  1.210 V
3.98.85 10 14  (iv) V SB  4 V,
Now C ox 
150 10 8 VT  0.5594 20.389  4
Then
 2.30110 7 F/cm 2  20.389 
 0.7294 V

  
2 1.6 10 19 11.7 8.85 10 14 5 1016   VT  0.7713  0.7294  1.501 V
2.30110 7 _______________________________________
  0.5594 V 1/ 2

10.51
 5 1016 
(b)  fp  0.0259 ln    0.3890 V  1016 
10 
 1.5 10   fp  0.0259 ln    0.3473 V
10 
 1.5 10 

 411.7  8.85  10 14 0.3890  

 1/ 2

VT    2  V  2 
(i) x dT

1.6  10 19 5  10 16 

 fp SB fp

 0.12 20.3473  2.5

 
 1.419 10 5 cm
 max 
QSD  20.3473 
 
 1.6 10 19 5 1016 1.419 10 5   or
VT  0.114 V
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 10
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

Now VT  VTO  VT C ox  8.63 10 8 F/cm 2

0.5  VTO  0.114 We find
 VTO  0.386 V   
Qss  1.6 10 19 5 1010  8 10 9 C/cm 2
_______________________________________ Then
 max   Q ss
Q SD
10.52 VT    ms  2 fp
(a) C ox 
3.98.85 10 14  C ox
200 10 8  1.38 10 8  8 10 9 
    1.0  20.288
 1.726 10 7 F/cm 2 8.63 10 8 
 
2e s N d or
 VT  0.357 V
C ox
(b) For NMOS, apply V SB and VT shifts in a

  
2 1.6 10 19 11.7 8.85 10 14 5 1015   positive direction, so for VT  0 , we want
1.726 10 7 VT  0.357 V.
  0.2358 V 1 / 2 So
 5 1015 
(b)  fn  0.0259 ln    0.3294 V
10 
 1.5 10 
VT 
2e s N a
C ox
 2 fp  V SB  2 fp 
VT    2  V BS  2 fn  or
    
fn


 0.22  0.2358 20.3294  VBS  0.357 
2 1.6 10 19 11.7 8.85 10 14 1015


8
8.63 10
 20.3294
 V BS  2.39 V

 20.288  VSB  20.288 
or
_______________________________________

0.357  0.211 0.576  VSB  0.576 
10.53 which yields
(a) n  poly-to-p-type   ms  1.0 V VSB  5.43 V
_______________________________________
 1015 
 fp  0.0259 ln    0.288 V
10 
 1.5 10  10.54
also Plot
_______________________________________
 4 s  fp 
1/ 2

x dT  
 eN a  10.55

 411.7  8.85  10 14 0.288 

 1/ 2 (a)
W n C ox
 
1.6  10 19 10 15  

 gm 
L
VGS  VT 
or W n ox
x dT  0.863 10 4 cm  VGS  VT 
Lt ox
Now
104003.98.85 10 14  5  0.65

 max   1.6  10 19 1015 0.863  10 4
Q SD    
475 10 8
or or
 max   1.38  10 8 C/cm 2
Q SD g m  1.26 mS
Also Now

C ox  

ox 3.9 8.85 10 14  g m 
gm g
 m  0.8 
1
t ox 400 10 8 1  g m rs gm 1  g m rs
or which yields
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 10
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

1  1  1  1  Then
rs    1    1
g m  0.8  1.26  0.8  
C M  1.035 10 14 
or  
 1  0.8974 10 3 10 10 3  
rs  0.198 k  or
(b) For VGS  3 V, g m  0.683 mS C M  1.032 10 13 F
Then Now
g m 
0.683
 0.602 mS 
C gsT  C ox L  0.75  10 4 W  
1  0.6830.198

3.98.85 10 14

or 8
g m 500 10
  
0.602
  0.88  2 10 4  0.75 10 4 20 10 4
g m 0.683
or
which is a 12% reduction.
_______________________________________ C gsT  3.797  10 14 F
We now find
10.56 gm
fT 
(a) The ideal cutoff frequency for no overlap
capacitance is,

2 C gsT  C M 
gm  V  V  0.8974 10 3
fT   n GS 2 T 
2 C gs 2 L 
2 3.797 10 14  1.032 10 13 

400 4  0.75 or
f T  1.01 GHz

2 2  10 4 2
 _______________________________________
or
f T  5.17 GHz 10.57
(b) Now (a) For the ideal case
gm  4 10 6
fT  f T  ds 

2 C gsT  C M  2 L 2 2 10  4  
where or
CM  C gdT 1  g m RL  f T  3.18 GHz
We find (b) With overlap capacitance (using the

C gdT  C ox 0.75  10 4 20  10 4   values from Problem 10.56),

3.98.85 10  gm
14
fT 
 8

2 C gdT  C M 
500 10

 0.75 10 4 20 10 4   We find
g m  WC ox ds
or
C gdT  1.035  10 14 F 
20 10 3.98.85 10 4 10 
4 14 6

8
500 10
Also or
W n C ox
gm  VGS  VT  g m  0.5522 10 3 S
L


 
20 10 4 4003.9 8.85 10 14   We have
CM  C gdT 1  g m RL 

2 10  4 500 10 8   
 1.035 10 14 
 4  0.75
or  
 1  0.5522 10 3 10 10 3  
g m  0.8974 10 3 S or
C M  6.750 10 14 F
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 10
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

Then
0.5522 10 3
fT 

2 3.797 10 14  6.75 10 14 
or
f T  0.833 GHz
_______________________________________