Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 14

By D. A. Neamen Problem Solutions

______________________________________________________________________________________

Chapter 14
14.1 1.24
(b)    0.653  m
1.24
 max  m 1.90
Eg (i) From Figure 14.4,   2.6 10 4 cm 1
1.24 I d 
(a) Si:  max   1.11  m (ii)   exp  d 
1.12 I 0
(b) Ge:  max 
1.24
 1.88  m 
 exp  2.6 10 4 0.80 10 4  
0.66  0.125
(c) GaAs:  max 
1.24
 0.873  m Fraction absorbed  1  0.125  0.875
1.42 _______________________________________
1.24
(d) InP:  max   0.919  m 14.4
1.35
 I x 
_______________________________________ g 
h
14.2 1.24
(a) For   480 nm, For h  1.3 eV,    0.95  m
1 .3
1.24 1.24
E   2.58 eV For silicon:   310 2 cm 1

Then for I x   10 2 W/cm 2 , we obtain
0.480
For   725 nm,
1.24 g 
3 10 10 
2 2

E
0.725
 1.71 eV
1.6 10 1.3 19

(b) For E  0.87 eV, or

1.24 1.24 g   1.44 1019 cm 3 s 1
   1.43  m
E 0.87 The excess concentration is
For E  1.32 eV, 
n  g   1.44 1019 10 6  
1.24 or
  0.939  m
1.32 n  1.44 1013 cm 3
For E  1.90 eV, _______________________________________
1.24
  0.653  m 14.5
1.90
p
_______________________________________ (a) p  g  p 0  g  
 p0
14.3
5 1015
1.24 g   2.5 10 22 cm 3 s 1
(a)    0.752  m 2 10 7
1.65
For h  1.65 eV,
(i) From Figure 14.4,   910 3 cm 1 1.24
I d    0.752  m
(ii)   exp  d  1.65
I 0
From Figure 14.4,   910 3 cm 1
 
 exp  9 10 1.2 10
3 4

I 0 
g h 
 0.340 
Fraction absorbed  1  0.34  0.66

2.5 10 1.6 10 1.65
22 19

9 10 3
 0.733 W/cm 2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 14
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

I  d  where L p  D p p
(b)  0.1  exp  d 
I 0 The photon flux in the semiconductor is
  
0.1  exp  9 10 3 d  x    O exp  x 
1  1  and the generation rate is
d ln   G L   x     O exp  x 
9 10 3
 0.1 
so the differential equation becomes
 2.56 10 4 cm  2.56  m
d 2 p n  p n  O
_______________________________________  2  exp  x 
dx 2 Lp Dp
14.6 The general solution is of the form
1.24 1.24 x  
   0.886  m p n x   A exp   B exp  x 
E 1.40  Lp   Lp 
   
From Figure 14.4,   4.5 10 2 cm 1
  O p
I d   2 2  exp  x 
(a)   0.1  exp  d   L p 1
I 0
As x   , p n  0 so that B  0 . Then
1  1  1  1 
d  ln   ln     x    O p
  0.1  4.5 10  0.1 
2
p n x   A exp   exp  x 
 L p   2 L2  1
 5.12 10 3 cm  51.2  m   p

At x  0 , we have
1  1 
(b) d  ln   d p n 
4.5 10 2
 0.3  Dp  sp n
dx x 0 x 0
 2.68 10 3 cm  26.8  m
so we can write
_______________________________________
  O p
p n  A 2 2
14.7 x 0  L p 1
GaAs: and
For x  1  m  10 4 cm, we have 50% d p n  A   O p
2

absorbed or 50% transmitted, then   2 2

dx x 0 L p  L p 1
I x 
 0.50  exp  x  Then we have
IO
AD p  2  O p D p s  O  p
We can write    sA  2 2
1  1   1 
Lp  L p 1
2 2
 L p 1
     ln      4   ln 2 Solving for A, we find
 x   0.5   10 
or   O p  s   D p 
A 2 2  
  0.69 10 4 cm 1 
 L p  1  s  D p L p  
This value corresponds to The solution can now be written as
  0.75  m , E  1.65 eV   O p
_______________________________________ p n x   2 2
 L p 1
14.8  s  Dp x 
  exp   exp  x 
The ambipolar transport equation for minority
carrier holes in steady state is 
 s  D p L p  
 Lp 
 
d 2 p n  p _______________________________________
Dp  GL  n  0
dx 2
p
or
d 2 p n  p n G
2
 2  L
dx Lp Dp
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 14
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

14.9 The solution is then

We have   x   x 
 
d 2 n p n p n p x   G L n 1  cosh   B sinh  
Dn  GL  0   L n   Ln 
dx 2
n where B was just given.
or _______________________________________
 
d 2 n p n p G
 2  L 14.10
dx 2 Ln Dn
L n  D n n 0  2510 6   5 10 3 cm
where Ln  Dn n
The general solution can be written in the L p  D p p 0  105 10 7 
form  2.236 10 3 cm
 x   x 
n p x   A cosh   B sinh    G L n  Dn Dp 
Now J S  en i2   
 Ln   Ln   Ln N a L p N d 
 
For s   at x  0 means n p 0  0 . Then
0  A  G L n  A  G L n  
 1.6 10 19 1.5 1010  2

At x  W ,  25 10 
 
 Dn
 
d n p
 s o n p
 3
 5 10 10   
16 3 15 
2.236 10 10   
10
dx x W x W J S  1.790 10 A/cm 2
Now 
I S  AJ S  5 1.79 10 10 
W 
n p W   G L n cosh   8.950 10 10 A
 Ln  (a) I L  eG L AW
W  We find
 B sinh    G L n

 Ln 
Vbi  0.0259  ln 
  
 1016 1015 
  0.6350 V
and
 
 
 1.5 1010 
2

d n p G L n W 
 sinh    2  V  Na  Nd 
1/ 2

dx x W Ln  Ln  W   s bi  
 e  N N 
W   a d 
B

Ln
cosh 
 Ln 

 211.7 8.85 10 14 0.635


so we can write  1.6 10 19
G L n Dn W  BDn W   10 16  1015  
1/ 2
sinh  
 L cosh L
 
   16
Ln  Ln  n  n    
 10 10
15 
 
W 
 s o  G L  n cosh  W  9.508 10 5 cm
 Ln  Then
W      
I L  1.6 10 19 5 10 21 5 9.508 10 5 
 B sinh    G L n 
  0.380 A  380 mA
 Ln  
 I 
Solving for B, we obtain (b) Voc  Vt ln 1  L 
 W    W     IS 
G L  L n sinh    s o n cosh   1 
  0.380 
  Ln    L n     0.0259 ln 1  
B 10
 8.95 10 
Dn W  W 
cosh   s o sinh   Voc  0.5145 V
Ln  n
L  Ln  Voc 0.5145
(c)   0.810
Vbi 0.635
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 14
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

14.11  V  V  I
From Problem 14.10, I S  8.95 10 10 A (ii) 1  m  exp m
 V
  1 L

 Vt   t  IS
 I  10 10 3
(a) Voc  Vt ln 1  L   1
 IS  8.95 10 10
 120 10 3   1.117 10 7
 0.0259 ln 1  
10 
 8.95 10  By trial and error, V m  0.351 V
 0.4847 V Now
 V    V  
(b) I  I L  I S exp   1 I m  I L  I S exp m   1
  Vt     Vt  
100 10 3  120 10 3  10 10 3
 V
 8.95  10 10 exp
 
  1

 
  0.351  
 8.95 10 10 exp   1
  0.0259  
  Vt  
 V  0.4383 V I m  9.3110 3 A  9.31 mA
 V  V  I Then
(c) 1  m  exp m
 V
  1 L
 Pm  I mVm  9.310.351  3.27 mW
 Vt   t  IS
(b)
120 10 3 
 1 100 10 3 
8.95 10 10 (i) Voc  0.0259 ln 1  
10 
 8.95 10 
 1.34110 8
 0.480 V
By trial and error, V m  0.412 V
 V  V  I
Now (ii) 1  m  exp m   1  L
 V    Vt   Vt  IS
I m  I L  I S exp m   1 100 10 3
  Vt    1
8.95 10 10
 120  10 3
 1.117 10 8
 
  0.412  
 8.95 10 10 exp   1 By trial and error, Vm  0.407 V
  0.0259   Now
 I m  112.75 10 3 A  112.75 mA  V  
I m  I L  I S exp m   1
Pm  I mVm  112.750.412   Vt  
 46.5 mW
 100  10 3
V 0.412
(d) V m  I m R L  R L  m 
I m 0.11275  
  0.407  
 8.95 10 10 exp   1
  0.0259  
R L  3.65 
_______________________________________ I m  9.40 10 2 A  94.0 mA
Then
14.12 Pm  I mVm  94.00.407   38.3 mW
From Problem 14.10, I S  8.95 10 10 A P 38.3
(c) m 2   11.7
(a) Pm1 3.27
 I  _______________________________________
(i) Voc  Vt ln 1  L 
 IS 
 10 10 3 
 0.0259 ln 1  
10 
 8.95 10 
 0.420 V
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 14
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

14.13  V  
 J   
I  50  10 3  4.579  10 12 exp   1
VOC  Vt ln 1  L    Vt  
 JS  We see that when I  0 , V  VOC  0.599 V.
 30 10 3 
 0.0259 ln 1  

We find
 JS 
where V (V) I (mA)
0 50
 1 Dn 1 Dp 
J S  en i2    0.1 50
 N a n Nd p  0.2 50

0.3 50
which becomes 0.4 49.98

J S  1.6 10 19 1.8 10 6  
2
0.45 49.84
0.50 48.89
 1 225 1 7 
 8
 19  0.55 42.36
 N a 5  10 10 5  10 8  0.57 33.46
or 0.59 14.19
 6.708 10 4 

J S  5.184 10 7    1.183 10 15  (b) The voltage at the maximum power point
 N a  is found from
Then  Vm   Vm  I
N a (cm 3 ) J S (A/cm 2 ) VOC (V) 1    exp   1 L

 Vt   Vt  IS
10 15 3.477 10 17 0.891 50  10 3
 1
10 16 3.478 10 18 0.950 4.58 10 12
19
10 17
3.484 10 1.01  1.092 1010
10 18 3.539 10 20 1.07 By trial and error,
_______________________________________ V m  0.520 V
At this point, we find
14.14 I m  47.6 mA
(a) so the maximum power is
 
I L  J L  A  25 10 3 2  50 10 3 A Pm  I mVm  47.60.520
We have or
 1 D 1 Dp  Pm  24.8 mW
J S  en i2  n
  (c) We have
 N a  n Nd  p 
 V V 0.520
or V  IR  R   m 
I I m 47.6  10 3

J S  1.6 10 19 1.5 1010   2
or
 1 18 1 6  R  10.9 
 6
 19 7  _______________________________________
 3  10 16
5  10 10 5  10 
which becomes 14.15
J S  2.289 10 12 A/cm 2  180 10 3 
or (a) Voc  0.0259  ln 1  

 2 10 9 
I S  4.579 10 12 A  0.474 V
We have  V  V  I
 V   (b) 1  m  exp m   1  L
I  I L  I S exp   1  Vt   Vt  IS
  Vt   180 10 3
or  1  9  10 7
2 10 9
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 14
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

By trial and error, V m  0.402 V (e) Then I  60.09463  0.5678 A

V  V
So R L  
10.14
 17.86 
I m  I L  I S exp m 
 I 0.5678
 Vt 
_______________________________________
 
 0.402 
 180 10 3  2 10 9 exp 
 0.0259  14.17
1
 1.69 10 A  169 mA Let x  0 correspond to the edge of the space
Pm  I mVm  1690.402  67.9 mW
charge region in the p-type material. Then in
the p-region
(c) R L 
V m 0.402
  2.379   
d 2 n p n p
I m 0.169 Dn  GL  0
dx 2
n
(d) R L  1.52.379  3.568 
or
Now
 
d 2 n p n p G
V V   2  L
I  I L  I S exp  dx 2
Ln Dn
RL  Vt  where
V

 180 10 3  2 10 9 exp 
 V 
 G L   x     O exp  x 
3.568  0.0259  Then we have
By trial and error, V  0.444 V  
d 2 n p n p  O
V 0.444  2  exp  x 
Then I    0.1244 A
2
dx Ln Dn
R L 3.568
The general solution is of the form
P  IV  124.40.444  55.2 mW x x
_______________________________________ n p x   A exp   B exp
 L 

 Ln   n 
 
 2 O2 n exp  x 
14.16
 100 10 3   Ln  1
(a) Voc  0.0259  ln 1  

 10 10  As x   , n p  0 so that B  0 . Then
 0.5367 V   x    O n
 V  V  n p x   A exp  2 2
  exp  x 
 Ln   Ln  1
I
(b) 1  m  exp m
 V
  1 L

 Vt   t  IS  
We also have n p 0  0  A  2 O2 n ,
100 10 3  Ln  1
 1
10 10 which yields
 10 9
 
A  2 O2 n
By trial and error, V m  0.461 V  Ln  1
Then We then obtain

I m  100 10 3  10 10 exp
 0.461 
      x 
n p x   2 O2 n exp

  exp  x 
 0.0259   L n  1   L n  
 9.463 10 2 A  94.63 mA where  O is the incident flux at x  0 .
Pm  I mVm  94.630.461  43.62 mW
_______________________________________
10
(c) n   21.7  n  22 cells
0.461 14.18
(d) Now V  220.461  10.14 V For 90% absorption, we have
x 
P  IV  exp  x   0.10
5.2  I 10.14  I  0.5128 A O
0.5128 Then
Then n    5.42  n   6
0.09463
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 14
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

14.20
exp   x  
1
 10 n-type, so holes are the minority carrier
0 .1
(a)
  
or
p  G L p  10 21 10 8
1
x     ln 10 or
 
p  n  1013 cm 3
For h  1.7 eV ,   10 4 cm 1
(b)
Then
 1 

  ep  n   p 
x   4   ln 10  2.3 10  4 cm
 10  
 1.6 10 19
10 8000  250
13

or or
x  2.3  m   1.32 10 2 (  -cm) 1
and for h  2.0 eV,   10 5 cm 1 . (c)
Then I L  J L  A   A 
 AV
 1  L
x   5   ln 10  0.23 10  4 cm 
1.32 10 10 4 5
2
 
 10  
or 100 10  4
x  0.23  m or
I L  0.66 mA
_______________________________________
(d)
14.19 IL
 ph 
(a) no  N d  51015 cm 3 eG L AL
I  e n no A 0.66 10 3

 
 1.6 10 19 1200  5 1015   1.6 10  19

10 21 10  4 100 10  4 
or

 5 10  4 
3

4

  ph  4.125
 120 10 
_______________________________________
I  0.12 A  120 mA
  
(b) p  GL p 0  10 21 10 7  1014 cm 3 14.21
(c)   ep    n p
x    O exp  x 
 1.6 10 10 1200  400
19 14 The electron-hole generation rate is
g    x     O exp  x 
 2.56 10 2 (  -cm) 1 and the excess carrier concentration is
(d) I L   A p   p x
 
 2.56 10  2 5 10  4  3
4

  Now

  ep  n   p 
 120 10 
3
 3.2 10 A  3.2 mA and
IL J L   
(e)  ph  The photocurrent is now found from
eG L AL
W xO
3.2 10 3

1.6 10  
19

10 21 5 10  4 120 10  4 
IL      dA   dy     dx
0 0

ph  3.33 xO

_______________________________________

 We  n   p  p  dx  
0
Then
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 14
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

xO 
(c) I L  eGL A W  Ln  L p 
 
I L  We  n   p   O p exp  x dx  
 1.6 10 19
10 10 
21 3
0


 We  n   p   O p  2.095  35.36  10.010 4
 1  xO I L  7.593 10 4 A  0.7593 mA
  exp  x 
   0 _______________________________________
which becomes
 
I L  We n   p O p 1  exp  xO 
14.23
In the n-region under steady state and for
Now   0 , we have
  
I L  50 10 4 1.6 10 19 1200  45050 d 2 p n  p
 2 10
 10 16 7
1  exp 5 10 10  4 4 Dp
dx  2
 GL  n  0
p
or or
I L  0.131  A d 2 p n  p n G
_______________________________________  2  L
dx  2
Lp Dp
14.22 where L p  D p p and where x  is

Vbi  0.0259  ln 
 
 10 2  10 16 15
 positive in the negative x direction. The

 1.5  1010
2
  homogenerous solution is found from
 0.6530 V d 2 p nh  p nh
 2 0
L n  D n n 0  255 10 7  dx  2 Lp
The general solution is found to be
 3.536 10 3 cm
  x   
  B exp  x  
L p  D p p 0  1010 7  p nh x   A exp
 Lp   Lp 
   
 10 3 cm The particular solution is found from
 2  V  V R   N a  N d 
1/ 2
p np G
W   s bi    2  L
  N N  Lp Dp
e  a d 

 211.7  8.85 10 14 0.653  5

 which yields

 
1.6 10 19  p np 
G L L2p
 G L p
1/ 2
Dp
 1016  2  1015  
  16 The total solution is the sum of the
 
 10 2  10
15
 
  homogeneous and particular solutions, so we
Then have
  x   
W  2.095 10 4 cm p n x   A exp   B exp x    G L p
(a) I L1  eWG L A  Lp   Lp 
   
 
 1.6 10 19 2.095 10 4 10 21 10 3    One boundary condition is that p n remains
 3.352 10 A  33.52  A 5 finite as x    which means that B  0 .
(b) In n-region, Then at x   0 , p n 0  0  p n 0  p nO , so
 
p  G L p 0  10 21 10 7  1014 cm 3  that p n 0   p nO .
We find that
In p-region,
 
n  G L n0  10 21 5 10 7  
A   p nO  GL p 
The solution is then written as
 51014 cm 3
  x 
p n x   G L p  G L p  p nO  exp 
 Lp 
 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 14
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

The diffusion current density is found as 14.25

J p  eD p
d p n x 
(a) G L 0 
I 0

10 3 0.080
dx x  0 h 1.6 10 19 1.5
But  3.33 10 20 cm 3 s 1
d p n  d p n  Then

dx dx  G L x   G L 0 exp x 
since x and x  are in opposite directions.
So
    
 3.33 10 20 exp  10 3 x 

d p n  (b) J L  e o 1  exp W 

J p  eD p
dx  x0

 eD p  GL p  p nO   1  exp W 
eG L 0

 1 

 
 exp  x   
 
1.6 10 19 3.333 10 20 
 Lp 
 
 L p  x 0
  10 3  
Finally  1  exp 10 100 10 
3 4

eD p p nO
J p  eG L L p  J L  5.33 10 2 A/cm 2  53.3 mA/cm 2
Lp _______________________________________
_______________________________________
14.26
14.24 (a) J L  eWG L
(a) J L  e o 1  exp W 
 
 1.6 10 19 20 10 4 10 21  

Diode A: J L  1.6 10 19
5 10  17
 0.32 A/cm 2

 1  exp 10 2 10 

4 4
(b) J L  e o 1  exp W 
J L  6.92 10 2 A/cm 2
 1  exp W 
eG L 0

Diode B: J L  1.6 10 19
5 10  17 
 1  exp 10 10 10 
4 4


1.6 10 19 10 21  
J L  8.0 10 2 A/cm 2
10 3  
 1  exp 10 20 10 
4
  
3
Diode C: J L  1.6 10 19 5 1017
J L  0.138 A/cm 2
 1  exp 10 80 10 
4 4
_______________________________________
J L  8.0 10 2 A/cm 2
(b) J L  e o 1  exp W  14.27
The minimum  occurs when   1  m
 
Diode A: J L  1.6 10 19 5 1017 
which gives   10 2 cm 1 . We want
 1  exp 5 10 2 10 
2 4
x 
J L  7.613 10 3 A/cm 2  exp  x   0.10
O
 
Diode B: J L  1.6 10 19 5 1017  which can be written as
 1  exp 5 10 10 10 
2 4
exp  x  
1
 10
0.10
J L  3.148 10 2 A/cm 2
Then
 
Diode C: J L  1.6 10 19 5 1017  x  ln 10   2 ln 10   2.30  10  2 cm
1 1
 1  exp 5 10 80 10 
2 4
 10
or
J L  7.853 10 2 A/cm 2
x  230  m
_______________________________________
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 14
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

14.28 14.33
For Al x Ga1 x As system, a direct bandgap for We can write the external quantum efficiency
0  x  0.45 , we have as
E g  1.424  1.247 x  ext  T1T2
where T1  1  R1 and where R1 is the
At x  0.45 , E g  1.985 eV, so for the direct
reflection coefficient (Fresnel loss), and the
bandgap
factor T 2 is the fraction of photons that do not
1.424  E g  1.985 eV
experience total internal reflection. We have
which yields 2
0.625    0.871  m  n  n1 
R1   2 
_______________________________________  n 2  n1 
so that
14.29 2
 n  n1 
(a) From Figure 14.24, E g  1.64 eV T1  1  R1  1   2 
1.24 1.24  n 2  n1 
   0.756  m which reduces to
Eg 1.64
4n1 n 2
(b) From Figure 14.24, E g  1.78 eV T1 
n1  n 2 2
1.24 1.24
   0.697  m Now consider the solid angle from the source
Eg 1.78 point. The surface area described by the solid
_______________________________________ angle is  p 2 . The factor T1 is given by
 p2
14.30 T1 
1.24 1.24 4 R 2
Eg    1.85 eV From the geometry, we have
 0.670
From Figure 14.23, x  0.35   p 2  
sin  C    p  2R sin  C 
_______________________________________  2  R  2 
Then the area is
14.31  
1.24 1.24 A   p 2  4 R 2  sin 2  C 
Eg    1.85 eV  2 
 0.670
Now
From Figure 14.24, x  0.38
 p2  
_______________________________________ T1   sin 2  C 
4 R 2  2 
14.32 From a trig identity, we have
(a) For GaAs, n 2  3.66 and for air, n1  1.0 .   1
sin 2  C   1  cos C 
The critical angle is  2  2
n   1  Then
 C  sin 1  1   sin 1    15.86
 n2   3.66  T1  1  cos C 
1
The fraction of photons that will not 2
experience total internal reflection is The external quantum efficiency is now
2 C 215.86  4n1 n 2
 1  cos C 
1
  8.81%  ext  T1T2 
360 360 n1  n2  2
2

(b)Fresnel loss: or
2
 n  n1 
2 2n1 n 2
 3.66  1   ext  1  cos C 
R   2      0.3258
 2
n  n 1   3.66  1  n1  n 2 2
The fraction of photons emitted is then _______________________________________
0.08811  0.3258  0.0594  5.94%
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 14
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

14.34 14.35
For an optical cavity, we have For GaAs:
 h  1.42 eV   
1.24
 0.873  m
N   L
2 1.42
If  changes slightly, then N changes slightly Then
also. We can write
 
2

0.873 10 
4 2
 5.08 10 7 cm
N 1 1 N 1  1 2
 2L 275 10 
4

2 2 or
Rearranging terms, we find
  5.08 10 3  m
N 1 1 N 1  1 2 N 1 1 N 1  2  2
    0 _______________________________________
2 2 2 2 2
If we define   1   2 , then we have
N1 
  2
2 2
We can approximate  2   , then
N 1 2L
 L  N1 
2 
Then
1 2L 
  
2  2
which yields
2
 
2L
_______________________________________