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Crystal Structure Calculations and Analysis

1. The document provides homework problems on crystal structures including calculating planar concentrations of atoms in niobium and comparing to an estimated surface concentration, determining the atomic concentration in silicon crystal, and identifying which silicon crystal plane has the most atoms per unit area. 2. Another problem involves using copper's electron drift mobility to calculate the conduction electron concentration and average electrons per copper atom. 3. The final problems involve identifying if a lattice is a Bravais lattice, drawing its primitive cell, determining crystal directions of FCC lattice stacking, and drawing the third layer of HCP and FCC crystal structures.

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Jung Na
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16 views2 pages

Crystal Structure Calculations and Analysis

1. The document provides homework problems on crystal structures including calculating planar concentrations of atoms in niobium and comparing to an estimated surface concentration, determining the atomic concentration in silicon crystal, and identifying which silicon crystal plane has the most atoms per unit area. 2. Another problem involves using copper's electron drift mobility to calculate the conduction electron concentration and average electrons per copper atom. 3. The final problems involve identifying if a lattice is a Bravais lattice, drawing its primitive cell, determining crystal directions of FCC lattice stacking, and drawing the third layer of HCP and FCC crystal structures.

Uploaded by

Jung Na
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd

Homework #1 Due by 4/12/2020

1. Niobium (Nb) has the BCC crystal with a lattice parameter a = 0.3294 nm. Find the
planar concentrations as the number of atoms per nm2 of the (100), (110) and (111)
planes. Which plane has the most concentration of atoms per unit area? Sometimes
the number of atoms per unit area nsurface on the surface of a crystal is estimated by
using the relation nsurface = nbulk2/3 where nbulk is the concentration of atoms in the bulk.
Compare nsurface values with the planar concentrations that you calculated and
comment on the difference. [Note: The BCC (111) plane does not cut through the
center atom and the (111) has one-sixth of an atom at each corner.

2. Si has the diamond crystal structure. Given the lattice parameters of Si is a = 0.543
nm, what is the atomic concentration in the Si Crystal?

3. a. Given the Si lattice parameter a = 0.543 nm, calculate the number of Si atoms per unit
volume, in nm-3.
b. Calculate the number of atoms per m2 and per nm2 on the (100), (110) and (111) planes
in the Si crystal. Which plane has the most number of atoms per unit area?

4. Using the electron drift mobility from Hall-effect measurements (Table 2.4), calculate
the concentration of conduction electrons in copper, and then determine the average
number of electrons contributed to the free electron gas per copper atom in the solid.

5. A brass disk of electrical resistivity 50 n£2 m conducts heat from a heat source to a
heat sink at a rate of 10 W. If its diameter is 20 mm and its thickness is 30 mm, what
is the temperature drop across the disk, neglecting the heat losses from the surface?
6. (a) Is this Bravais lattice?

(b) You can make this lattice to be Bravais lattice with two basis vectors. What are they?

(c) Draw primitive cell. How many atoms in the cell?

7. (a) Here are the first 2 layers of HCP and FCC crystals. Draw the 3rd layer on each
figure.

(HCP) (FCC)

(b) For FCC lattice, what crystal direction [hkl] show this lattice stacking?

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