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Capacitive Effects in Poromoto Devices

This document discusses key capacitances and effects that are important to understand in MOS transistors. It describes three main capacitances - gate to body (Cgb), gate to source (Cgs), and gate to drain (Cgd). It also discusses effects such as mobility degradation, velocity saturation, channel length modulation, and threshold voltage effects that influence MOS transistor behavior. The capacitances and effects are modeled using equations that take into account various transistor parameters like gate voltage, channel length, and doping levels.

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lingeswari1402
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0% found this document useful (0 votes)
9 views9 pages

Capacitive Effects in Poromoto Devices

This document discusses key capacitances and effects that are important to understand in MOS transistors. It describes three main capacitances - gate to body (Cgb), gate to source (Cgs), and gate to drain (Cgd). It also discusses effects such as mobility degradation, velocity saturation, channel length modulation, and threshold voltage effects that influence MOS transistor behavior. The capacitances and effects are modeled using equations that take into account various transistor parameters like gate voltage, channel length, and doping levels.

Uploaded by

lingeswari1402
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

(V thoracausde

the Mos lorkvcoy


Sorrinal auita ton be vigw a o pu
Co pacl onta loluon Dah
thase
tapoc anteh o4e Don-inga and
logi'nol
dapondoat
Adamind by hese Capatil ontog, MOS

Gat
Cas
Sotunta
(
Cdb
Copotilante an
Mos tsonsh
body
Mos tapaihan a
Mos Gjot tapocBonu Mos ifion topoc:h ana
presonu 6
oVela p 7evorse bl vad pn hunch
Capactanu tapcct ente
tOuo to presonte
o chornl) ot souto Sran ouerlapping 19ghon)
Mos Gott topodBonta
I. Snlairnose tapoctonte :
The inbini tapochana
omde paroll| plat copoutonte d
lo WL Cox
thuova, Ih botorn plat ot Copocby
tse
depend a,
tup :
the made od opeuot on o the hois lor. The inone Sx
tapotanl has 3 3Comprunta tpd,T
I: Cgb (Gat b body)
2. Cqs (Gat. to- Souto)
3. g4 (Gat -to - Drain)
ti) Cutof Nhen Ihe homisbr is ot (Vg < )
Ihere i no channl
channel inveLsi on, So hCopocalonce
ànyesi on
KIAt betwRn got ond body.
body

Nhen Vg >Ve, on sinvebion layor in tosmed,


Nhich ot as a Pood tonductor, botwen Soule
G
and drain So
dinibua evendy betwgon Souu ond D

dran body

tiip Soturaton: Hhun Vd Vdsot the soistos


in Satuaton ond Iho chonnl iA Bnched obb
So, Ih Capautonu bekweon IF
gat ond drain a ppromoely ero.
tomected
Thou foro oll K Capoctonte
tonoded
bo hueon gat ond Souto. Ddoolly
body
tho anhntit
tapatB anto is approninated g
Poromoto, Enoau
Co
Satuaion
Co<2
Col2
Co Co

Mos ovailap tapaohon


Generolly, hu SotucQ and drain should ond
at lho edg2 o ho gat oxi do. But in rookly,
he Soute and drain ovelaps
an Ormount gsot
Cgsottovelap) gat. N p

These capoutonag papo rtionol thae uid th %


{ha honmistor. Tt should bo addad o nòic gat
tapocton u o nd the tital
W

Co ’ The Loal gati capoctonu


geting ama|la. th
Co
an incroNad levol
2
Cgd Sotuation.
Vds
Vdsot
Innse goto Capsctcna a o unehon Vdn
Mos ddusios Capacitana
he Mos didusion quncton tapaotante a
qomed due to AQVeISQ- biased chaunel-clop
NAt
cinplont
P
Saurca -body and drain - body Side wa/
pn- fencttons. Sowe
Np Galiin
s uou-
Bolom/
inea and docraosos
Conits chaunel
Componenta Subsrata NA
the
Cbottom
botom -plaa CCbottorm) Capaci tona ca
the Souuo qormed by
Tgion (uitk
(wilth doping Na). So thodoçingtotalNp) ond ha abshot
by |Cbottom capoctana given
The
Sido - wall
i>junckan CopacBonhsit
Csw)
Ssute Tagion capactane cs prmed the
stop (uslkdopngs) and
cinplant (uitn dopng leal N )
3 Capactona
Iho pt channel
So lko total
Ca given by Khee
Csu j’ction daplt
Gjsw (wt2xhs) (t ix a toe chnoog
Cisw’ Pauaneta)
Tt n di catex hat, ho side wat Capactanw (ont paánela
Capaclonla es
qormed in tha qoutt side o the
the total uncion Tagien.
Copoctonce a Gon by
Cdi Cbotom t Csw Cj x AREA +
+ GjSwY
CisJ Y PERETER
Whs t Cjsw CW+2)
6)
Non Ddoal 1v ollecs

llaets thal are inpurtont to douito tuith thon


nglh bobwniton (t).
Mobilty dogeadalon
the bwgh vollage at tk gal attota Ihe toniorA
Io e edge ol ha channal, toing
lhe vxido intaato tolilons uith
hal Aluw he tai4,
b less tutent han pects at igh Vg. thia
ol}oct in olled rnobit ty dogsadoton. ton bo
modole d by eplating with Snallor
n s540tm'
|.85

0.54 V. tox
0.338V tn
2. Valouty dogadahon.
i6 dua ba igh Loleral qold (Vasl)
Gqenenally. Caniei ditt velocit (v) àncreanes
th
i elechht ield.

Thik equation Volid only or. low or weak

electhe 4;atd. But at kiga ald, diyt Etochort


valoiy
BaturateA. Thi tan be modoled by

l+ E/Ec Ee
Vsat EE ’E(V en)
nont han 2xpecled at hgd van.
where
drain Souo Volhage
Volloge y, ,&
The critital Taached

ot Wfsch citol elechve diotd


loss þronounad
The veloiy satuahon ellect is
Valouy NnOS, , becawe
beachlovo Saturobon.
PMoS rad
Comparad
tomþa to b
n
1quised gor hoas
atd is
channel ongth modulaton satuot
ndant a Vdh in
Tdealy, d, ia indape unsent souo. But in
mokng hantiskr pau~oct drain. and body tt
pn-unchon batwaon thatF also
eol, the wsdt Ld.
depleton iagion with a e<focive channal
om the
inereOses with Vdb - Vdg. Theie by L

l2ngth edues.
*Le}L-tdr
becaue -dapl
Thoeby rhonnel lng tn.
paoportonal
fdo in Vesely Vab
pary 2 VA
2
volBge Vdh VAb

Nheve A empintal parameta lalledJocbs.


longtt nodulation
channel
4 Tbreshot d yohage elects
() Body elect Gyernaualy Aho potontol at Souto
body ase Same i.e Vsb o) But, i
(2)
Vsb to, the threxhotd
Volage thongs.
paD O% o} charging threshold
poanal do}een betueen the voltoge
soula and body
Lalled body elfect/ subshat elfect. This can
ACC
OY
be modoled by

Them al
Nhere , Vt -Vo at Vcb
’ body a}}oct toelteint volteg
indlotes
24e; NA 0 changes in Vsl
Hhere
4hickness oh oxide loyor
Lox
Con il ot ode
Porni iviy
ehauge o} ca iss
Pairi Hivày o sil:con C.

Cononhoton
NA
( . Orain Trdued Borior Lowehng-(D1BL)
Tho drain Vollage Va cseatea an ele choc
4iald thot a}focts tho threshotd. Vo (tage Thi~
Cano saturaton, T on be
tn odolod by VE Vo - Voo
Khere n’ DIBL toelfuont
(i i) Short chonnal eect changes
The threshotd Noltage Jpialy ttts
wsth chabrel Jangth L eBpeially signid cont in
Smoler length. thu a<}et is talad short chahrel
e ect br VË rollo
PiS

4. leakage Conducton
(i) subthresh otd modol, Tdo6
chanel I-V
Tn Long unent does bot
Teal,
But in tbreshstd, Tother drops
Nhan V <V.
abupty ut o below amount oh esent in
o ozporontioly, ie. Smo l oFF hronhstos.
ows through
tha orde b PA
alled waak inyeslon,
the regime Vgs <vE ’

1s-20A, horo
Khen ode hinner han
paobobilty that Ah elec hon
in
non-Zoro

the gat tumali ng throug, git oide, Two phyoal


mecharion or gat tunnelg
fowler - Nordhoin Tunnali ng ’ importnt at
pAogm,
EEPROM meno'e s)
modoro oXda tte knoss
’ Sirot tunnali ng imor tont at Low yolhe
th÷p ocde
’ funneling tursent higher in HOS Ron PMcd, becau
He elechos tunnal rom tonduetorn bond sile the
holos tunnel o valer
Valenea. band.

(in) Junction Leakage +

The pn funeion behuaur


d tevon Gnd sub shrat orra
diods AKmal amont b urent

Ip lows due to TeVese bis.


Heaily doped drin% are ettects.
i) BTBT (Bond. t-Bard
Turne liva)
draun or Soule and bo dy.
(i) GiDL ( Gat ioduod drain Loakag)
Nhen tha gat partally oyaslaps
the drain. Nhere
Ig TeVeLse Satuohon tne nt
Vf the mal Voltoge
Vp dodo Volege
(Vsb a VAb)
5. Termpesrotuie ependone'.
’ The hanistor chooclashcA ae ingluanod
by tmpecature. 14 the tomporoture hectei ,
i) Mobil:y docrees
(i) VË l Thres hetd Voltoge) decrecnex.
’ the Mobibty ehßect ’ impr tant fos oN horósbr
Lood, t lower To at
high karrperature,

Nhere tömperature
T’ dhsout Jooparature
ky ’ qithng porametir tongs tem
I.2 -2.0

The theshotd eedt ’ impor tont hor

lamþaratue.

Nnee Kv ’ Tanges trom os-3 mk.

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