® BCY79

LOW NOISE AUDIO AMPLIFIER

DESCRIPTION
The BCY79 is a silicon Planar Epitaxial PNP
transistor in Jedec TO-18 metal case. It is
intented for use in audio input stages, driver
stages and low-noise input stages.
The NPN complementary type is BCY59.

TO-18

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
V CES Collector-Emitter Voltage (V BE = 0) -45 V
V CEO Collector-Emitter Voltage (I B = 0) -45 V
V EBO Emitter-Base Voltage (I C = 0) -5 V
IC Collector Current -200 mA
IB Base Current -20 mA
P tot Total Dissipation at T amb ≤ 25 o C 390 mW
at T C ≤ 25 o C 1 W
o
T stg Storage Temperature -55 to 175 C
o
Tj Max. Operating Junction Temperature 175 C

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BCY79

THERMAL DATA
o
R thj-case Thermal Resistance Junction-Case Max 150 C/W
o
R thj-amb Thermal Resistance Junction-Ambient Max 450 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CES Collector Cut-off V CE = -35 V -2 -20 nA
Current (V BE = 0) V CE = -35 V T C = 150 o C -100 nA
-10 µA
I CEX Collector Cut-off V CE = -45 V T C = 100 o C -20 µA
Current (V BE = -2 V)
I EBO Emitter Cut-off Current V EB = -4 V -20 nA
(I C = 0)
V (BR)CES Collector-Emitter I C = -10 µA -45 V
Breakdown Voltage
(V BE = 0)
V (BR)CEO ∗ Collector-Emitter I C = -2 mA -45 V
Breakdown Voltage
(I B = 0)
V (BR)EBO Emitter-Base I E = -1 µA -5 V
Breakdown Voltage
(I C = 0)
V CE(sat) ∗ Collector-Emitter I C = -10 mA I B = -0.25 mA -0.12 -0.25 V
Saturation Voltage I C = -100 mA I B = -2.5 mA -0.4 -0.8 V
V BE(sat) ∗ Base-Emitter I C = -10 mA I B = -0.25 mA -0.6 -0.7 -0.85 V
Saturation Voltage I C = -100 mA I B = -2.5 mA -0.7 -0.85 -1.2 V
V BE(ON) ∗ Base-Emitter (On) IC = -10 µA V CE = -5 V -0.55 V
Voltage IC = -2 mA V CE = -5 V -0.6 -0.65 -0.75 V
IC = -10 mA V CE = -1 V -0.68 V
IC = -100 mA V CE = -1 V -0.75 V
h FE ∗ DC Current Gain I C = -10 µA V CE = -5 V
Gr. VIII 30 200
Gr. IX 40 270
Gr. X 100 340
I C = -2 mA V CE = -5 V
Gr. VIII 180 250 310
Gr. IX 250 350 460
Gr. X 380 500 630
I C = -10 mA V CE = -1 V
Gr. VIII 120 260 400
Gr. IX 160 360 630
Gr. X 240 500 1000
I C = -100 mA V CE = -1 V
Gr. VIII 45
Gr. IX 60
Gr. X 60
hfe ∗ Small Signal Current I C = -2 mA V CE = -5 V f = 1 KHz
Gain Gr. VIII 175 260 350
Gr. IX 250 330 500
Gr. X 350 520 700
fT Transition Frequency I C = -10 mA V CE = -5 V f = 100 MHz 180 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %

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ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit
C CBO Collector-Base IE = 0 VCB = -10 V f = 1MHz 4.5 7 pF
Capacitance
C EBO Emitter-Base IC = 0 V EB = -0.5 V f = 1MHz 11 15 pF
Capacitance
NF Noise Figure I C = -0.2 mA V CE = -5 V 2 6 dB
f = 1KHz R g = 2KΩ ∆f = 200Hz
hie Input Impedance I C = -2 mA V CE = -5 V f = 1 KHz
Gr. VIII 3.6 KΩ
Gr. IX 4.5 KΩ
Gr. X 7.5 KΩ
h re Reverse Voltage Ratio I C = -2 mA V CE = -5 V f = 1 KHz
Gr. VIII 2 10 -4
Gr. IX 2 10 -4
-4
Gr. X 3 10
h oe Output Admittance I C = -2 mA V CE = -5 V f = 1 KHz
Gr. VIII 24 50 µS
Gr. IX 30 60 µS
Gr. X 50 100 µS
td Delay Time V CC = -10 V
I C = -10 mA IB1 = - 1 mA 50 ns
I C = -100 mA I B1 = - 10 mA 50 ns
tr Rise Time V CC = -10 V
I C = -10 mA IB1 = -1 mA 35 ns
I C = -100 mA I B1 = -10 mA 5 ns
ts Storage Time V CC = -10 V
I C = -10 mA IB1 = - I B2 = 1 mA 400 ns
I C = -100 mA I B1 = - I B2 = 10 mA 250 ns
tf Fall Time V CC = -10 V
I C = -10 mA IB1 = - I B2 = 1 mA 80 ns
I C = -100 mA I B1 = - I B2 = 10 mA 200 ns
t on Turn-on Time V CC = -10 V
I C = -10 mA I B1 = -1 mA 85 150 ns
I C = -100 mA I B1 = -10 mA 55 150 ns
t off Turn-off Time V CC = -10 V
I C = -10 mA IB1 = - I B2 = 1 mA 480 800 ns
I C = -100 mA I B1 = - I B2 = 10 mA 480 800 ns

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BCY79

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

DC Current Gain Normalized h Parameters

Noise Figure vs. Frequency Noise Figure (f = 1 KHz)

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 BCY79

TO-18 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 12.7 0.500

B 0.49 0.019

D 5.3 0.208

E 4.9 0.193

F 5.8 0.228

G 2.54 0.100

H 1.2 0.047

I 1.16 0.045

L 45o 45o

D A
G

I
H
E
F

L
B

0016043

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BCY79

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved

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