Chapter 3: MOSFET Amplifiers
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Content
MOSFET
Current Voltage Characteristics
MOSFET Circuits at DC
Small Signal Operation and Models
Basic MOSFET Amplifier Configurations
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MOSFET
MOSFET: Metal-Oxide-Semiconductor Field-Effect Transistor.
According to the physics of the device, we can classify transistors into two main classes:
Field Effect Transistors (FET): Conduction is controlled by electric field which is
produced by voltage applied to the control terminals. So, the control draws no current
and FET is a voltage- controlled device.
Bipolar Junction Transistors (BJT): Diode-based device which is usually blocked unless
the control terminals are forward- biased. So, the control is a current, and BJT is a
current amplifier by nature.
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MOSFET
MOSFET is a four-terminal device: gate (G), source (S), drain (D) and body (B).
Two kinds of MOSFETs: n-channel (NMOS) and p-channel (PMOS) devices.
The device structure is basically symmetric in terms of drain and source.
Source and drain terminals are specified by the operation voltage.
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MOSFET
Gate voltage exceeds a threshold
voltage 𝒗𝑮𝑺 > 𝑽𝒕 : electrons start
to accumulate on the substrate
surface. 𝐕𝐭 = 𝟎. 𝟑 ÷ 𝟏 (V)
The positive 𝒗𝑮𝑺 > 𝑽𝒕 is used to
induce the channel and it is called
n-channel enhancement type
MOSFET.
The induced n region forms a channel
for current flow from drain to source.
The field controls the amount of charge in the channel and determines the
channel conductivity.
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MOSFET – Small 𝑣𝐷𝑆
Small 𝒗𝑫𝑺 is applied: free electrons
travel from source to drain through the
induced n-channel.
The resulting current 𝑖𝐷 flows from drain
to source (opposite to the direction of
the flow of negative charge).
The resulting current 𝑖𝐷 flows from drain
to source (opposite to the direction of
the flow of negative charge).
The channel is controlled by the effective
voltage or overdrive voltage:
𝑽𝑶𝑽 = 𝑽𝑮𝑺 − 𝑽𝒕
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MOSFET – Increasing 𝑣𝐷𝑆
As 𝑣𝐷𝑆 is increased, the channel becomes more
tapered and its resistance increases correspondingly.
At the point 𝒗𝑫𝑺𝒔𝒂𝒕 = 𝒗𝑮𝑺 − 𝑽𝒕 , the channel is
pinched off at the drain side.
Triode region: 𝒗𝑫𝑺 < 𝒗𝑫𝑺𝒔𝒂𝒕
Saturation region: 𝒗𝑫𝑺 ≥ 𝒗𝑫𝑺𝒔𝒂𝒕
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MOSFET – IV Relationship
𝟏
Triode region: 𝒊𝑫 = 𝒌𝒏 𝒗𝑮𝑺 − 𝑽𝒕 𝒗𝑫𝑺 − 𝟐 𝒗𝟐𝑫𝑺
𝟏 𝟐
Saturation region: 𝒊𝑫𝒔𝒂𝒕 = 𝟐 𝒌𝒏 𝒗𝑮𝑺 − 𝑽𝒕
𝟏
Channel resistance: 𝒓𝑫𝑺 =
𝒌𝒏 𝒗𝑮𝑺 −𝑽𝒕
𝑾 ′
𝑾
Transconductance parameter: 𝒌𝒏 = 𝝁𝒏 𝑪𝒐𝒙 = 𝒌𝒏 where:
𝑳 𝑳
𝑪𝒐𝒙 : oxide capacitance per unit area.
𝝁𝒏 : mobility of electron in the inversion layer.
𝑾 and 𝑳: channel width and length.
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MOSFET – Circuit Symbols
n-channel enhancement-mode MOSFET:
p-channel enhancement-mode MOSFET:
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NMOS – Current Voltage Characteristics
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MOSFET - Current Voltage Characteristics
Example 1: Consider an NMOS transistor fabricated in a L = 0.18𝜇𝑚 process with L =
0.18𝜇𝑚 and W = 2𝜇𝑚. The process technology is specified to have 𝐶𝑜𝑥 = 8.6 fF/μ𝑚2 ,
𝜇𝑛 = 450 𝑐𝑚2 /𝑉𝑠 and 𝑉𝑡𝑛 = 0.5𝑉.
a. Find 𝑉𝐺𝑆 and 𝑉𝐷𝑆 that result in the MOSFET operating at the edge of saturation with
𝐼𝐷 = 100𝜇𝐴.
b. If 𝑉𝐺𝑆 is kept constant, find 𝑉𝐷𝑆 that results in 𝐼𝐷 = 50𝜇𝐴.
c. To investigate the use of the MOSFET as a linear amplifier, let it be operating in
saturation with 𝑉𝐷𝑆 = 0.3𝑉. Find the change in 𝑖𝐷 resulting from 𝑉𝐺𝑆 changing from
0.7𝑉 by +0.01𝑉 and by −0.01𝑉.
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MOSFET – Finite Output Resistance
In practice, increasing 𝑣𝐷𝑆 beyond 𝑣𝑂𝑉 does
affect the channel somewhat.
This effect can be accounted for 𝑖𝐷 in the
expression for by including a factor
𝟏 + 𝝀𝒗𝑫𝑺 :
𝟏 𝟐
𝒊𝑫𝒔𝒂𝒕 = 𝒌𝒏 𝒗𝑮𝑺 − 𝑽𝒕 𝟏 + 𝝀𝒗𝑫𝑺
𝟐
Defining the output resistance 𝑟𝑜 as
𝝏𝒗𝑫𝑺 𝑽𝑨
𝒓𝒐 ≡ ቤ =
𝝏𝒊𝑫 𝒗 𝑰𝑫
𝑮𝑺=𝒄𝒐𝒏𝒔𝒕
𝟏
𝑽𝑨 =
𝝀
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MOSFET Circuits at DC
DC analysis for MOSFET circuits:
• Assume the operation mode and solve the dc bias utilizing the corresponding
current equation.
• Verify the assumption with terminal voltages (cutoff, triode and saturation).
• If the solution is invalid, change the assumption of operation mode and
analyze again.
Example 2: The NMOS transistor in the following
circuit has 𝑉𝑡 = 0.7𝑉, 𝜇𝑛 𝐶𝑜𝑥 = 100μA/𝑉 2 , 𝐿 = 1𝜇𝑚
and 𝑊 = 32𝜇𝑚 . Design the circuit so that the
transistor operates at 𝐼𝐷 = 0.4𝑚𝐴 and 𝑉𝐷 = 0.5𝑉.
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MOSFET Circuits at DC
Example 3: The NMOS transistor in the following circuit has 𝑉𝑡 = 0.6𝑉, 𝜇𝑛 𝐶𝑜𝑥 =
200μA/𝑉 2 , 𝐿 = 0.8𝜇𝑚 and 𝑊 = 4𝜇𝑚. Design the circuit so that the transistor
operates at 𝐼𝐷 = 80𝐴. Find the DC voltage 𝑉𝐷 .
Example 4: Design the circuit so that the transistor operates at 𝑉𝐷 = 0.1𝑉. Let
𝑉𝑡 = 1𝑉, 𝑘𝑛 = 1mA/𝑉 2. Find the effective resistance between drain and source at
this operating point.
Example 3 Example 4
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MOSFET Circuits at DC
Example 5: Determine the voltage and the current of all nodes and branches? 𝑉𝑡 =
1𝑉, 𝑘𝑛 = 1𝑚𝐴/𝑉2.
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MOSFET Circuits at DC
Example 6: Design the following circuit so that the transistor operates in saturation
with 𝐼𝐷 = 0.5𝑚𝐴 and 𝑉𝐷 = 3𝑉. Let the enhancement-type PMOS transistor have
𝑊
𝑉𝑡𝑝 = −1𝑉 and 𝑘𝑝′ 𝐿 = 1𝑚𝐴/𝑉 2. Assume 𝜆 = 0. What is the largest value that 𝑅𝐷
can have while maintaining saturation-region operation?
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MOSFET Circuits at DC
Example 7: The NMOS and PMOS transistors in the following circuit are matched,
𝑊 𝑊
with 𝑘𝑛′ 𝐿 = 𝑘𝑝′ 𝐿 = 1𝑚𝐴/𝑉 2 and 𝑉𝑡𝑛 = −𝑉𝑡𝑝 = 1𝑉 . Assume 𝜆 = 0 for both
devices, find the drain currents 𝑖𝐷𝑁 and 𝑖𝐷𝑃 as well as the voltage 𝑣𝑜 for 𝑣𝐼 =
0𝑉, 2.5𝑉 𝑎𝑛𝑑 − 2.5𝑉.
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MOSFET in Amplifier Design
𝟏 𝟐
𝒊𝑫 = 𝒌𝒏 𝒗𝑮𝑺 − 𝑽𝒕
𝟐
𝟐𝒌𝒏 𝑹𝑫 𝑽𝑫𝑫 + 𝟏 − 𝟏
𝑽𝑮𝑺 |𝑩 = 𝑽𝒕 +
𝒌𝒏 𝑹𝑫
𝒗𝑫𝑺 = 𝑽𝑫𝑫 − 𝒊𝑫 𝑹𝑫
Input voltage increase drain 𝟏 𝟐
current increase output voltage 𝒗𝑫𝑺 = 𝑽𝑫𝑫 − 𝒌𝒏 𝑹𝑫 𝒗𝑮𝑺 − 𝑽𝒕
𝟐
decrease.
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MOSFET in Amplifier Design
DC operating point
𝟏 𝟐
𝒗𝑫𝑺 = 𝑽𝑫𝑫 − 𝒌𝒏 𝑹𝑫 𝒗𝑮𝑺 − 𝑽𝒕
𝟐
The signal to be amplified, 𝑣𝑔𝑠 (𝑡), a function of time t, is superimposed on the bias
voltage. Thus the total instantaneous value of becomes:
𝒗𝑮𝑺 𝒕 = 𝑽𝑮𝑺 + 𝒗𝒈𝒔 (𝒕)
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MOSFET in Amplifier Design
The signal to be amplified, 𝑣𝑔𝑠 (𝑡), a
function of time t, is superimposed
on the bias voltage. Thus the total
instantaneous value of becomes:
𝒗𝑮𝑺 𝒕 = 𝑽𝑮𝑺 + 𝒗𝒈𝒔 (𝒕) 𝛛𝒗𝑫𝑺
𝑨𝒗 ≡ | = −𝒌𝒏 𝑽𝑮𝑺 − 𝑽𝒕 𝑹𝑫
𝛛𝒗𝑮𝑺 𝒗𝑮𝑺 =𝑽𝑮𝑺
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MOSFET in Amplifier Design
Example 8: The transistor is specified to have 𝑉𝑡 = 0.4𝑉,𝑘𝑛′ = 0.4𝑚𝐴/𝑉 2 , 𝑊/𝐿 =
10, 𝑉𝐷𝐷 = 1.8𝑉, 𝑅𝐷 = 17.5𝑘Ω, 𝑉𝐺𝑆 = 0.6𝑉.
a. For 𝑣𝑔𝑠 = 0, find 𝑉𝑂𝑉, 𝐼𝐷, 𝑉𝐷𝑆 and 𝐴𝑣.
b. What is the maximum symmetrical signal swing allowed at the drain? Hence find
the maximum allowable amplitude of a sinusoidal 𝑣𝐺𝑆 .
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MOSFET in Amplifier Design
𝒗𝑫𝑺 ≈ 𝟎
𝑰𝑫 = 𝟎
𝒗𝑫𝑺 = 𝑽𝑫𝑫
Transistor as a switch
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Small Signal Operation and Models
The DC bias point:
1 2
1 2
𝐼𝐷 = 𝑘𝑛 𝑉𝐺𝑆 − 𝑉𝑡 = 𝑘𝑛 𝑉𝑂𝑉
2 2
𝑉𝐷𝑆 = 𝑉𝐷𝐷 − 𝑅𝐷 𝐼𝐷
When the input signal 𝑣𝑔𝑠 applied
2
1
𝑖𝐷 = 𝑘𝑛 𝑉𝐺𝑆 + 𝑣𝑔𝑠 − 𝑉𝑡
2
1 1
= 𝑘𝑛 𝑉𝐺𝑆 − 𝑉𝑡 2 + 𝑘𝑛 𝑉𝐺𝑆 − 𝑉𝑡 𝑣𝑔𝑠 + 𝑘𝑛 𝑣𝑔𝑠
2
2 2
1 2
In order to reduce the non-linear distortion: 𝑘𝑛 𝑣𝑔𝑠 ≪ 𝑘𝑛 𝑉𝐺𝑆 − 𝑉𝑡 𝑣𝑔𝑠
2
↔ 𝑣𝑔𝑠 ≪ 2 𝑉𝐺𝑆 − 𝑉𝑡
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Small Signal Operation and Models
If the small signal condition is satisfied:
1 2
𝑖𝐷 = 𝑘𝑛 𝑉𝐺𝑆 − 𝑉𝑡 + 𝑘𝑛 𝑉𝐺𝑆 − 𝑉𝑡 𝑣𝑔𝑠 = 𝐼𝐷 + 𝑖𝑑
2
The MOSFET transconductance 𝑔𝑚 :
𝑖𝑑
𝑔𝑚 ≡ = 𝑘𝑛 𝑉𝐺𝑆 − 𝑉𝑡
𝑣𝑔𝑠
Voltage gain:
𝑣𝐷𝑆 = 𝑉𝐷𝐷 − 𝑖𝐷 𝑅𝐷 = 𝑉𝐷𝐷 − 𝐼𝐷 + 𝑖𝑑 𝑅𝐷
𝑣𝑑𝑠
𝐴𝑣 ≡ = −𝑔𝑚 𝑅𝐷
𝑣𝑔𝑠 = 𝑉𝐷𝑆 − 𝑖𝑑 𝑅𝐷
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Small Signal Operation and Models
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Small Signal Model
𝑉𝐴
𝑟𝑜 =
𝐼𝐷
𝑟𝑜 ~ 10𝑘Ω − 100𝑘Ω
The current 𝐼𝐷 is the value of the dc drain current:
1 2
1 2
𝐼𝐷 = 𝑘𝑛 𝑉𝐺𝑆 − 𝑉𝑡 = 𝑘𝑛 𝑉𝑂𝑉
2 2
The trans-conductance 𝑔𝑚 :
2𝐼𝐷
𝑔𝑚 = 𝑘𝑛 𝑉𝑂𝑉 = 𝑘𝑛′ 𝑊 Τ𝐿 𝑉𝑂𝑉 =
𝑉𝑂𝑉
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Small Signal Model – T model
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Small Signal Model
Example 9: A discrete common-source MOSFET amplifier utilizing a drain-to-gate
resistance 𝑅𝐺 for biasing purposes. The transistor has 𝑉𝑡 = 1.5 𝑉 ,𝑘𝑛′ 𝑊/𝐿 =
0.25𝑚𝐴/𝑉 2 and 𝑉𝐴 = 50𝑉. Determine its small-signal voltage gain and its input
resistance.
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Summary
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The Three Basic Configurations
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Common Source Amplifier
The common source is the most widely used.
The bulk of the voltage gain is obtained by using one or more
Common Source stages in the cascade.
Characteristic Parameters of the CS Amplifier:
Open circuit voltage gain:
𝐴𝑣0 = −𝑔𝑚 𝑅𝐷 ∥ 𝑟𝑜 ≈ −𝑔𝑚 𝑅𝐷
Overall voltage gain:
𝐺𝑣 = −𝑔𝑚 𝑅𝐷 ∥ 𝑟𝑜 ∥ 𝑅𝐿
Input resistance:
𝑅𝑖𝑛 = ∞
Output resistance:
𝑅𝑜𝑢𝑡 = 𝑅𝐷 ∥ 𝑟𝑜 ≈ 𝑅𝐷
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Common Source Amplifier
The common source is the most widely used.
The bulk of the voltage gain is obtained by using one or more
Common Source stages in the cascade.
Characteristic Parameters of the CS Amplifier:
Open circuit voltage gain:
𝐴𝑣 = −𝑔𝑚 𝑅𝐷 ∥ 𝑟𝑜 ≈ −𝑔𝑚 𝑅𝐷
Overall voltage gain:
𝐺𝑣 = −𝑔𝑚 𝑅𝐷 ∥ 𝑟𝑜 ∥ 𝑅𝐿
Input resistance:
𝑅𝑖𝑛 = ∞
Output resistance:
𝑅𝑜𝑢𝑡 = 𝑅𝐷 ∥ 𝑟𝑜 ≈ 𝑅𝐷
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Common Source Amplifier
Characteristic Parameters of the CS Amplifier
(with source resistance):
𝑣𝑖 𝑔𝑚
𝑖= = 𝑣𝑖
1ൗ + 𝑅 1 + 𝑔 𝑅
𝑔𝑚 𝑠 𝑚
𝑣𝑜 = −𝑖𝑅𝐷
CS amplifier with source resistance
Open circuit voltage gain:
𝑣𝑜 𝑔𝑚 𝑅𝐷
𝐴𝑣 = =−
𝑣𝑖 1 + 𝑔𝑚 𝑅𝑆
Input resistance:
𝑅𝑖𝑛 = ∞
Output resistance:
𝑅𝑜𝑢𝑡 = 𝑅𝐷 ∥ 𝑟𝑜 ≈ 𝑅𝐷
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Common Gate Amplifier
Common Gate amplifier is used to obtain wide bandwidth.
Characteristic Parameters of the CS Amplifier:
Open circuit voltage gain:
𝐴𝑣 = 𝑔𝑚 𝑅𝐷
Overall voltage gain:
𝑅𝐷 ∥ 𝑅𝐿
𝐺𝑣 =
𝑅𝑠𝑖𝑔 + 1Τ𝑔𝑚
Input resistance:
1
𝑅𝑖𝑛 = Disadvantage!!!
𝑔𝑚
Output resistance:
𝑅𝑜𝑢𝑡 = 𝑅𝐷
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Common Drain Amplifier (Source
Follower)
The need for voltage buffers: the amplifier has
• High input resistance.
• Low output resistance.
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Common Drain Amplifier (Source
Follower)
Common Drain amplifier is usually used as a voltage buffer.
Characteristic Parameters of the CS Amplifier:
Open circuit voltage gain:
𝑅𝐿
𝐴𝑣 = ≈1
𝑅𝐿 + 1Τ𝑔𝑚
Overall voltage gain:
𝑅𝐿
𝐺𝑣 = ≈1
𝑅𝐿 + 1Τ𝑔𝑚
Input resistance:
𝑅𝑖𝑛 = ∞
Output resistance:
𝑅𝑜𝑢𝑡 = 1ൗ𝑔𝑚
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Discrete Circuit MOS Amplifiers
Example 9: Given 𝑉𝐷𝐷 = 𝑉𝑆𝑆 =
10𝑉 , 𝑘𝑛 = 1𝑚𝐴/𝑉 2 , 𝐼 = 0.5𝑚𝐴 ,
𝑅𝐷 = 15𝑘Ω , 𝑅𝐺 = 4.7𝑀Ω 𝑉𝑡 =
1.5𝑉, 𝑉𝐴 = 75𝑉.
Calculate input, output resistance
and overall voltage gain. 𝑅𝑠𝑖𝑔 =
100𝑘Ω, 𝑅𝐿 = 15𝑘Ω.
37
Discrete Circuit MOS Amplifiers
Example 10: Given 𝑉𝐷𝐷 = 𝑉𝑆𝑆 =
10𝑉 , 𝑘𝑛 = 1𝑚𝐴/𝑉 2 , 𝐼 = 0.5𝑚𝐴 ,
𝑅𝐷 = 15𝑘Ω , 𝑅𝐺 = 4.7𝑀Ω 𝑉𝑡 =
1.5𝑉, 𝑔𝑚 = 1𝑚𝐴/𝑉.
Calculate input, output resistance
and overall voltage gain. 𝑅𝑠𝑖𝑔 =
50Ω, 𝑅𝐿 = 15𝑘Ω.
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Discrete Circuit MOS Amplifiers
Example 11: Given 𝑉𝐷𝐷 = 𝑉𝑆𝑆 =
10𝑉 , 𝑘𝑛 = 1𝑚𝐴/𝑉 2 , 𝐼 = 0.5𝑚𝐴 ,
𝑅𝐷 = 15𝑘Ω , 𝑅𝐺 = 4.7𝑀Ω 𝑉𝑡 =
1.5𝑉, 𝑔𝑚 = 1𝑚𝐴/𝑉.
Calculate input, output resistance
and overall voltage gain. 𝑅𝑠𝑖𝑔 =
1𝑀Ω, 𝑅𝐿 = 15𝑘Ω.
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Summary
40
Q&A
41