8205A

Dual N-Channel MOSFET

.

GENERAL DESCRIPTION

The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology
to provide excellent RDS(on) , low gate charge and operation with low gate voltages. This device is
suitable for use as a load switch .

FEATURES

l VDS =20 V
l ID =6A
l Low on-state resistance Fast switching
RDS(on) = 45mΩ (typ.)(VGS = 4.5V, ID = 2.0A)
RDS(on) = 48mΩ (typ.)(VGS = 3.85V, ID = 2.0A)
RDS(on) = 60mΩ (typ.)(VGS = 2.5V, ID = 2.0A)
l Lead free product is acquired
l Surface Mount Package

APPLICATION

l Battery protection
l Load switch
l Power management

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking Device Device Package Reel size Tape width Quantity
8205A 8250A TSSOP8 Φ180mm 8mm 3000 units

PIN DESCRIPTION

Datasheet 2012-2-27 Page 1 of 6

 8205A
PIN NUM PIN NAME PIN FUNCTION
1 D DRAIN
2 S1 SOURCE1
3 S1 SOURCE1
4 G1 GATE2
5 G2 GATE2
6 S2 SOURCE2
7 S2 SOURCE2
8 D DRAIN

ABSOLUTE MAXIMUM RATINGS (TA = 25℃)

Symbol Parameter Value Unit

VDS Drain-source Voltage 20 V
ID Drain Current(continuous)at Tc=25℃ (Note1) 6 A
IDM Drain Current (pulsed) (Note2) 24 A
VGS Gate-source Voltage ±12 V
PD Power Dissipation (TC = 25°C) (Note1) 1.25 W
Tstg Operating and Storage Temperature Rang -55 to +150 ℃

Notes a. PW<10us,Duty Cycle<1%,VGS=4.5V

2
b. Mounted on ceramic substrate of 45 cm x 2.2mm.
Caution: These values must not be exceeded under any conditions.
Remark: The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.

Thermal Data

Symbol Parameter Max. Unit

Rthj-amb Thermal Resistance Junction- ambient 83 ℃/W

Electrical Characteristics (TC = 25℃)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source Breakdown Voltage ID=250uA, VGS=0V 20 V
IDSS Zero Gate Voltage Drain Current VDS=20V,VGS=0V 1 µA
IGSS Gate Leakage Current VGS=±10V,VDS=0V ±1 µA
VGS(th) Gate threshold voltage VDS=VGS,ID= 250uA 0.5 1.15 V
VGS=4.5V,ID=2A 45 50 mΩ
RDS(on) Drain to Source On-state Resistance VGS=3.85V,ID=2A 48 52 mΩ
VGS=2.5V,ID=2A 60 70 mΩ
Ciss Input Capacitance 370 pF
Coss Output Capacitance VDS=15V,VGS=0V,f=1MHz 89 pF
Crss Reverse Transfer Capacitance 9.7 pF
td(on) Turn-on Delay Time VDD=10V,ID=3A,
VGS=4.5V,RG=4.7 200 ns
tr Rise Time (Note2,3) 236 ns

Datasheet 2012-2-27 Page 2 of 6

 8205A
td(off) Turn-off Delay Time 36 ns
tf Fall Time 165 ns
Qg Total Gate Charge 7.5 nC
VDD=16V,VGS=4.5V,
Qgs Gate to Source Charge ID=6A 2.5 nC
(Note2,3)
Qgd Gate to Drain Charge 1.3 nC
VSD(*) Body Diode Forward Voltage IF=6A,VGS=0V 0.74 1.2 V
VDD=10V,IF=6A,di/dt=100A/us
Trr Reverse Recovery Time 80 ns
(Note2)

Notes:
1. Surface Mounted on FR4 Board, t≤10sec
2. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
3. Essentially independent of operating temperature
(*)Pulsed: Pulse duration

Typical characteristics (25℃ unless noted)

Figure 1 Output Characteristics Figure 2 Transfer Characteristics

10 10
ID(A)
ID(A)
V GS=4.5V

8 2.5V 8

6 2.0V 6

4 4 V DS =10V
1.5V

2 2
1.0V

0 0
0 2 4 6 8 V DS(V)
10 0 0.9 1.8 2.7 3.6 V GS(V)
4.5

Figure 3 Threshold Voltage vs. Figure 4 BVDSS [Link]

Temperature
1.4
Vth BV DSS
1.3

1.2 1.2

V GS =0V
1.0 1.1
ID=250uA

V DS=V GS 1.0
0.8
ID=250uA

0.6 0.9

0.4 0.8
-75 -25 25 75 125 Tj 175
( ℃) -75 -25 25 75 125 Tj (175
℃)

Datasheet 2012-2-27 Page 3 of 6

 8205A
Figure 5 RDSON vs. Temperature Figure 6 Source-drain diode forward
characteristics
V SD
0.74
(V)
RDS(on)
1.6

0.73
1.4

1.2 0.72
V GS=4.5V
ID=3A
1.0 0.71

0.8 0.70

0.6 0.69
-75 -25 25 75 125 Tj(175
℃) 0 2 4 6 8 ISD10
(A)

Figure 7 Capacitance Figure 8 Gate Charge

C (pF)
750 5
V GS(V)

Ciss
600 4

450 3
V DS=16V
f=1MHz ID=6A
300 2
V GS=0V

150 Crss 1
Coss
0 0
0 3 6 9 12 V DS(V)
15 0 2 4 6 8 Qg(nC)
10

Figure 9 Safe Operating Area Figure 10 Maximum Drain Current vs

Case Temperature
ID100
(A) 6
ID(A)
Operation in This Areais
Limited by R DS(on)
4.8
10 1ms

10ms 3.6
1
100ms
2.4
Notes: 1s
0.1 1. TC = 25 ℃
DC 1.2
2. TJ = 150 ℃
3. Single Pulse
0.01 0
0.01 0.1 1 10 V DS100
(V) 25 50 75 100 125 TC(150
℃)

Datasheet 2012-2-27 Page 4 of 6

 8205A
Figure 11 Maximum Transient Thermal impedance

D=0.50
Normalized Thermal Response ZθJC(t)

0.20
0.1 0.10
0.05
0.02

0.01 0.01

SINGLE PULSE
(THERMAL RESPONSE) Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x ZthJC + Tc
0.001
0.0001 0.001 0.01 0.1 1 10 100
t1, Square Wave Pulse Duration [sec]

Package Drawing

Datasheet 2012-2-27 Page 5 of 6

 8205A
Dimensions（unit：mm）

DIM A A(1) A(2) B C D E E1 e G L L1 a R S

Min. 1.05 0.05 0.99 0.19 2.9 6.2 4.3 0.254 0.45 0.9 0° 0.09 0.2
0.65
MM Nom. 1.1 0.1 1.02 0.25 0.127 3 6.4 4.4 GAGE 0.6 1 4°
BSC
Max. PLANE
1.2 0.15 1.05 0.3 3.2 6.6 4.5 0.75 1.1 8°

RESTRICTIONS ON PRODUCT USE

n The information contained herein is subject to change without notice.

n RZC Microelectronics Co., Ltd. exerts the greatest possible effort to ensure high quality and
reliability. Nevertheless, semiconductor devices in general can malfunction or fail due to their
inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing RZC products, to comply with the standards of safety in making a safe design for the
entire system, including redundancy, fire-prevention measures, and malfunction prevention, to
prevent any accidents, fires, or community damage that may ensue. In developing your designs,
please ensure that RZC products are used within specified operating ranges as set forth in the most
recent RZC products specifications.

n The RZC products listed in this document are intended for usage in general electronics applications
(personal equipment, office equipment, domestic appliances, etc.). These RZC products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality
and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury
(“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of RZC
products listed in this document shall be made at the customer’s own risk.

n RZC is not responsible for any problems caused by circuits or diagrams described herein whose
related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any
specific mass-production design.

Datasheet 2012-2-27 Page 6 of 6