IRF3205 ®

IRF3205 Pb
Pb Free Plating Product
N-Channel Trench Process Power MOSFET Transistor

General Description
The IRF3205 is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged
EAS capability and ultra low RDS(ON) is suitable for PWM,
load switching .

Features D
S
● VDS=55V; ID=105A@ VGS=10V; G
RDS(ON)<6.0mΩ @ VGS=10V
● Ultra Low On-Resistance Schematic Diagram
● High UIS and UIS 100% Test TO-220CB Top View

Application VDS = 55 V
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
● Inverter Application ID = 105 A

RDS(ON) = 5.0 mΩ

Table 1. Absolute Maximum Ratings (TA=25℃)

Symbol Parameter Value Unit
VDS Drain-Source Voltage (VGS=0V) 55 V

VGS Gate-Source Voltage (VDS=0V) ±25 V

ID (DC) Drain Current (DC) at Tc=25℃ 105 A

ID (DC) Drain Current (DC) at Tc=100℃ 100 A

(Note 1)
IDM (pluse) Drain Current-Continuous@ Current-Pulsed 420 A

dv/dt Peak Diode Recovery Voltage 30 V/ns

PD Maximum Power Dissipation(Tc=25℃) 139 W

Derating Factor 0.926 W/℃

(Note 2)
EAS Single Pulse Avalanche Energy 625 mJ
TJ,TSTG Operating Junction and Storage Temperature Range -55 To 175 ℃

Notes [Link] Rating: Pulse width limited by maximum junction temperature

[Link] condition:TJ=25℃,VDD=40V,VG=10V,RG=25Ω
B B

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 IRF3205 ®

Table 2. Thermal Characteristic

Symbol Parameter Value Unit
RJC Thermal Resistance,Junction-to-Case 1.08 ℃/W

Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Unit
On/Off States

BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 55 V

IDSS Zero Gate Voltage Drain Current(Tc=25℃) VDS=55V,VGS=0V 1 μA

IDSS Zero Gate Voltage Drain Current(Tc=125℃) VDS=55V,VGS=0V 1 μA

IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA

VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 2 4 V
RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=40A 5.0 6.0 mΩ
Dynamic Characteristics
gFS Forward Transconductance VDS=25V,ID=40A 25 S
Ciss Input Capacitance 5905 PF
Coss Output Capacitance VDS=25V,VGS=0V, 905 PF
f=1.0MHz
Crss Reverse Transfer Capacitance 548 PF

Qg Total Gate Charge 94 nC

Qgs Gate-Source Charge VDS=30V,ID=30A, 18 nC

VGS=10V
Qgd Gate-Drain Charge 25 nC

Switching Times
td(on) Turn-on Delay Time 15 nS
tr Turn-on Rise Time VDD=30V,ID=2A,RL=15Ω 18 nS
td(off) Turn-Off Delay Time VGS=10V,RG=2.5Ω 31 nS
tf Turn-Off Fall Time 38 nS

Source-Drain Diode Characteristics

ISD Source-drain Current(Body Diode) 105 A

ISDM Pulsed Source-Drain Current(Body Diode) 420 A

(Note 1)
VSD Forward On Voltage TJ=25℃,ISD=40A,VGS=0V 0.87 0.95 V
(Note 1)
trr Reverse Recovery Time TJ=25℃,IF=75A 56 nS
(Note 1) di/dt=100A/μs
Qrr Reverse Recovery Charge 113 nC

ton Forward Turn-on Time Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes [Link] Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25℃

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© 2013 Thinki Semiconductor Co.,Ltd. [Link]

 IRF3205 ®

Test Circuit
1) EAS Test Circuits

2) Gate Charge Test Circuit:

3) Switch Time Test Circuit：

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© 2013 Thinki Semiconductor Co.,Ltd. [Link]

 IRF3205 ®

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)

Figure1. Output Characteristics Figure2. Transfer Characteristics
ID-Drain Current (A)

ID-Drain Current (A)

VDS Drain-Source Voltage (V) VGS Gate-Source Voltage (V)

Figure3. Rdson Vs Drain Current Figure4. Rdson Vs Junction

RDS(ON) On-Resistance (mΩ)

Normalized On-Resistance

ID- Drain Current (A) TJ-Junction Temperature(℃)

Figure5. Gate Charge Figure6. Source- Drain Diode Forward
10
VGS Gate-Source Voltage (V)

0
VSD Source-Drain Voltage (V)

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© 2013 Thinki Semiconductor Co.,Ltd. [Link]

 IRF3205 ®

Figure7. Capacitance vs Vds Figure8. Safe Operation Area

7000
Ciss
6000
C Capacitance (pF)

ID-Drain Current (A)

5000

4000

3000

2000
Coss
1000
Crss
0
0 5 10 15 20 25
VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)

Figure9. BVDSS vs Junction Temperature Figure10. VGS(th) vs Junction Temperature

Normalized BVDSS

TJ-Junction Temperature(℃) TJ-Junction Temperature(℃)

Figure11. Normalized Maximum Transient Thermal Impedance

Transient Thermal Impedance
R(t), Normalized Effective

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© 2013 Thinki Semiconductor Co.,Ltd. [Link]