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Solid State Theory: Lattice Packing Fractions

The document discusses packing fractions, bond angles, and anisotropy for different crystal lattices. 1) It provides formulas to calculate the packing fraction for hcp, fcc, and diamond lattices based on the volume of a unit cell and number of lattice points. The packing fractions are π/√18, π/√18, and 3π/16 respectively. 2) The angle between bonds in a diamond lattice is calculated to be approximately 109.4 degrees based on nearest neighbor distances. 3) It explains that the hexagonal lattice exhibits anisotropic linear response due to its lower C2 rotational symmetry compared to isotropic response for lattices with higher symmetries.

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0% found this document useful (0 votes)
8 views2 pages

Solid State Theory: Lattice Packing Fractions

The document discusses packing fractions, bond angles, and anisotropy for different crystal lattices. 1) It provides formulas to calculate the packing fraction for hcp, fcc, and diamond lattices based on the volume of a unit cell and number of lattice points. The packing fractions are π/√18, π/√18, and 3π/16 respectively. 2) The angle between bonds in a diamond lattice is calculated to be approximately 109.4 degrees based on nearest neighbor distances. 3) It explains that the hexagonal lattice exhibits anisotropic linear response due to its lower C2 rotational symmetry compared to isotropic response for lattices with higher symmetries.

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Solid State Theory FS 15

Solution 2 PD V. Geshkenbein

Problem 2.1 Packing fractions


The formula which gives the filling fraction for the general lattice is
Vs ∗ Nsites
f= , (1)
Vuc
where Vs is given by the volume of a ball whose radius is the half of the shortest nearest
neighbour distance, Vuc is the volume of the unit cell, and Nsites is the number of lattice
points in the unit cell. √
Using√ the same notation as in the lecture, the nearest neighbour distance is 21 a, 22 a,
and 43 a for the hcp, fcp, and diamond lattices, respectively (for illustrations see pg. 3
of the notes on lecture 3). The number of sites in a unit cell is 2 (hcp), 4 (fcp), and 8
(diamond) 1 , and the volume of the unit cell is a3 for the cubic lattices. For the hexagonal
q √ √
lattice, notice that c = 23 2a and the area of the base parallelogram is 23 a2 , giving 2a3
as the volume of the unit cell. Therefore, the filling fractions are

π π 3π
√ , √ , ,
18 18 16

for the hcp, fcp, and diamond lattices respectively. Notice that the filling fractions of the
two cubic close packed lattices are the same since changing the stacking order from ABC
and ABA does not change the volume fraction.

Problem 2.2 Angle between the bonds in the diamond lattice



The nearest neighbour (n.n.) distance in a diamond lattice is 43 . On the other hand,√the
next nearest neighbour (n.n.n.) distance is the same as the n.n. of the fcc lattice ( 22 ).
Therefore, the angle between two bonds joining a site of the diamond lattice is the same
as the obtuse angle in the isosceles triangle in Fig.1, which is

cos−1 (−1/3) ≈ 109.4 degrees.

Notice that for each site in the diamond lattice their nearest neighbours form a perfect
tetrahedron.2

1
While counting the number of sites in a unit cell, one needs take into account whether the sites
are lying on the corners, edges, or faces. Such sites can be considered to be shared equally by all cells
they touch. For instance, for a 3D cubic lattice, each site situated at the corners are counted as 18 sites,
each site on the edges as 14 sites, and each site on the faces are counted as 12 sites. It is not necessary to
compute the partial volume of a sphere contained in one cell because any part cut off by the cell boundary
must be compensated by another sphere related to the first by a lattice translation.
2
For an interactive viewing of the various 3D lattices : [Link]

1
Figure 1: The triangle defined by three nearest neighbours in the diamond lattice

Problem 2.3 Anisotropy of the hexagonal lattice


The result follows from the fact that the 2D resistivity tensor is a symmetric two-tensor,
which defines a quadratic form. A generic real symmetric matrix ρ, defines the quadratic
form
qA (x) = xT · ρ · x.
The symmetries of the matrix ρ are defined by the unitary matrices U that satisfy

U −1 ρU = ρ.

Therefore, we have

q(x) = xT · ρ · x = xT · (U −1 ρU ) · x = (U x)T · ρ · (U x). (2)

Now notice that in two dimensions qA (x) = 1 is an equation which describes an ellipse in
the x−y plane for positive definite ρ. 3 Since Eq. 2, describes a rotation of this ellipse, the
only allowed non-trivial symmetries of a generic ρ are reflections (x → −x and y → −y).
If the crystal symmetry imposes any further symmetry on ρ, it can only be in the trivial
representation of this symmetry group (i.e. the matrix ρ is proportional to identity and
the ellipse a circle). As a result, any 2D lattice that has rotational symmetries higher
than C2 has an isotropic linear response.

3
When ρ is negative definite the solutions describe an imaginary ellipse, and if it is indefinite the
solutions describe a hyperbola. But the argument is also valid for these cases.

Common questions

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The nearest neighbor distances in different lattices are defined as 1/2 a for hcp, √2/2 a for fcp, and √3/4 a for the diamond lattice. These distances affect physical properties such as density and packing efficiency. Shorter nearest neighbor distances generally mean a denser structure, influencing material properties like hardness and thermal conductivity. For instance, diamond has robust physical properties partly due to its nearest neighbor arrangement .

Calculating the partial volume of a sphere in a unit cell is unnecessary because any part of the sphere that is cut off by the cell boundary is compensated by another sphere translated by the lattice. Therefore, the overlapped or missing volumes cancel out when extended over the entire lattice, ensuring that the effective packing fraction remains constant, as all unit cells of a particular lattice type are identical .

Anisotropy in a hexagonal lattice is explained through the 2D resistivity tensor, which is a symmetric two-tensor defining a quadratic form. The symmetries of the tensor ρ are defined by unitary matrices U that satisfy U−1ρU = ρ. In two dimensions, the quadratic form qA(x) = xT · ρ · x = 1 describes an ellipse, where symmetries only allow reflections. This implies that only trivial symmetries (matrix ρ proportional to the identity matrix making the ellipse a circle) are allowed, leading any lattice with higher rotational symmetries than C2 to have an isotropic linear response .

Symmetries in resistivity tensors influence material applications by dictating the isotropy or anisotropy of electrical or thermal conductivity. In practical terms, materials with isotropic response, dictated by symmetric resistivity tensors aligned with high rotational symmetry, are advantageous in applications where uniform behavior in all directions is desired, such as in electronic components or heat distribution panels. Conversely, anisotropic materials, with uneven conductivity properties, are beneficial in direction-specific applications, like thermoelectric generators or anisotropic conductive adhesives .

In lattice structures, the packing fraction is determined using the formula f = Vs * Nsites / Vuc, where Vs is the volume of a sphere given by the radius which is half the nearest neighbor distance, Nsites is the number of lattice sites in the unit cell, and Vuc is the unit cell volume. The hcp (hexagonal close-packed) and fcp (face-centered cubic) lattices both have the same nearest neighbor distance and share a filling fraction of π√18. This is because changing the stacking order from ABC (fcp) to ABA (hcp) does not affect the volume fraction, hence their packing fractions remain identical .

Rotational symmetries higher than C2 dictate that the matrix ρ must emerge in only the trivial representation of such symmetry groups, where the matrix becomes proportional to the identity matrix. This results in an isotropic linear response because the quadratic form qA(x) = 1 becomes a perfect circle in the x-y plane instead of an ellipse. Therefore, any additional symmetry implies isotropy, negating the anisotropic nature related to lower symmetry levels, such as reflection symmetries .

The angle between bonds in the diamond lattice is significant because it represents the natural angle formed due to its tetrahedral structure. It is derived from recognizing that the nearest neighbors in the lattice form a perfect tetrahedron. The angle is obtained using the cosine inverse of -1/3 (cos−1(-1/3)), resulting in an angle of approximately 109.4 degrees. This is the obtuse angle of the isosceles triangle formed by the bonds .

The unit cell volume plays a critical role in determining the filling fraction because it acts as the denominator in the filling fraction equation f = Vs * Nsites / Vuc. A larger volume unit cell, with everything else being constant, decreases the filling fraction, indicating a less efficient packing. Each lattice type has variable Vuc based on its structural dimension; for instance, cubic lattices have Vuc = a^3, while hexagonal lattices consider additional dimensional aspects to calculate volume. Understanding this relationship helps in material design and property predictions .

In a 3D cubic lattice, site counting involves considering whether the sites lie on the corners, edges, or faces of the unit cell. For corner sites, they are shared by 8 adjacent cells, contributing 1/8 site each. Edge sites are shared by 4 cells, contributing 1/4 each, while face sites are shared by 2 cells, contributing 1/2 each. This approach ensures an accurate count of lattice points, reflecting the actual number of unique sites per unit cell .

Lattice site sharing significantly impacts the accuracy of modeling and simulating crystal structures. Correctly accounting for shared sites (such as corner, edge, or face sites) ensures the precise replication of a crystal's macro properties from its micro-geometry, influencing parameters like symmetry, density, and mechanical properties in simulations. Ignoring these configurations can lead to errors in predicting behavior under stress or thermal conditions and in assessing material interactions at the atomic scale .

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