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GP1S52VJ000F Photointerrupter Overview

This document provides specifications for the GP1S52VJ000F phototransistor output photointerrupter. It consists of an emitter and detector in a case, with a 3mm gap and 0.5mm slit, for non-contact sensing applications. Key parameters include a gap width of 3mm and slit width of 0.5mm. It complies with RoHS directive and is intended for general object detection uses.

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0% found this document useful (0 votes)
250 views12 pages

GP1S52VJ000F Photointerrupter Overview

This document provides specifications for the GP1S52VJ000F phototransistor output photointerrupter. It consists of an emitter and detector in a case, with a 3mm gap and 0.5mm slit, for non-contact sensing applications. Key parameters include a gap width of 3mm and slit width of 0.5mm. It complies with RoHS directive and is intended for general object detection uses.

Uploaded by

ehsafattwork
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

GP1S52VJ000F

Gap : 3mm Slit : 0.5mm


GP1S52VJ000F Phototransistor Output,
Case package Transmissive
Photointerrupter

■ Description ■ Agency approvals/Compliance


GP1S52VJ000F is a standard, phototransistor output, 1. Compliant with RoHS directive
transmissive photointerrupter with opposing emitter and
detector in a case, providing non-contact sensing. For
■ Applications
this family of devices, the emitter and detector are insert-
1. General purpose detection of object presence or mo-
ed in a case, resulting in a through-hole design.
tion.
2. Example : Printer, FAX, Optical storage unit
■ Features
1. Transmissive with phototransistor output
2. Highlights :
• Verical Slit for alternate motion detection
3. Key Parameters :
• Gap Width : 3mm
• Slit Width (detector side): 0.5mm
• Package : 12.2×10×5mm
4. Lead free and RoHS directive compliant

Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Sheet No.: D3-A02401EN
1 Date Oct. 3. 2005
© SHARP Corporation
GP1S52VJ000F

■ Internal Connection Diagram


Top view
3 2

1 Anode
2 Cathode
3 Collector
4 Emitter
4 1

■ Outline Dimensions (Unit : mm)

Top view
12.2+0.3
−0.3

3+0.2
−0.1

S52
5

Model No.
Sharp mark “S”
A-Aʼ B-Bʼ
section section 5
(Detctor center)

A B
(2.5)

0.5 0.5 C1
1.5
7.5

Date code
10
3.5

mark (Both side)


Aʼ Bʼ
10MIN.
2.5

4−0.4+0.3
−0.1 4−0.45+0.3
−0.1

(9.2) (2.54)

4 1

3 2

• Unspecified tolerance shall be as follows ;


Dimension (d) Tolerance
d≤6 ±0.1
6<d≤18 ±0.2
• ( ) : Reference dimensions

Product mass : approx. 0.49g

Dip soldering material : Sn−3Ag−0.5Cu

Sheet No.: D3-A02501EN


2
GP1S52VJ000F

Date code (2 digit)


1st digit 2nd digit
Year of production Month of production
A.D. Mark Month Mark
2000 0 1 1
2001 1 2 2
2002 2 3 3
2003 3 4 4
2004 4 5 5
2005 5 6 6
2006 6 7 7
2007 7 8 8
2008 8 9 9
2009 9 10 X
2010 0 11 Y
: : 12 Z

repeats in a 10 year cycle

Country of origin
Japan, Indonesia or Philippines
(Indicated on the packing case)

Sheet No.: D3-A02501EN


3
GP1S52VJ000F

■ Absolute Maximum Ratings (Ta=25˚C)


Parameter Symbol Rating Unit
∗1
Forward current IF 50 mA
∗1, 2
Peak forward current IFM 1 A
Input
Reverse voltage VR 6 V
Power dissipation P 75 mW
Collector-emitter voltage VCEO 35 V
Emitter-collector voltage VECO 6 V
Output
Collector current IC 20 mA
∗1
Collector power dissipation PC 75 mW
Operating temperature Topr −25 to +85 ˚C
Storage temperature Tstg −40 to +100 ˚C
∗3
Soldering temperature Tsol 260 ˚C

1 Refer to Fig. 1, 2, 3

2 Pulse width ≤ 100μs, Duty ratio=0.01

3 For 5s or less

■ Electro-optical Characteristics (Ta=25˚C)


Parameter Symbol Condition MIN. TYP. MAX. Unit
Forward voltage VF IF=20mA − 1.25 1.4 V
Input Peak forward voltage VFM IFM=0.5A 3 4 V
Reverse current IR VR=3V − − 10 μA
Output Collector dark current ICEO VCE=20V − 1 100 nA
Collector current IC VCE=5V, IF=20mA 0.5 − 5 mA
Transfer
Collector-emitter saturation voltage VCE(sat) IF=40mA, IC=0.5mA − − 0.4 V
charac-
Rise time tr − 3 15
teristics Response time VCE=2V, IC=2mA, RL=100Ω μs
Fall time tf − 4 20

Sheet No.: D3-A02501EN


4
GP1S52VJ000F

Fig.1 Forward Current vs. Ambient Fig.2 Collector Power Dissipation vs.
Temperature Ambient Temperature
60 120

Collector power dissipation PC (mW)


50 100
Forward current IF (mA)

40 80
75

30 60

20 40

10 20
15
0 0
−25 0 25 50 75 85 100 −25 0 25 50 75 85 100
Ambient temperature Ta (˚C) Ambient temperature Ta (˚C)

Fig.3 Peak Forward Current vs. Fig.4 Forward Current vs.


Duty Ratio Forward Voltage
Pulse width≤100μs
Ta=25˚C
Ta=75˚C 25˚C
0˚C
50˚C
Peak forward current IFM (mA)

1 000 −25˚C
100
Forward current IF (mA)

100 10

10 1
10−2 10−1 1 0 0.5 1 1.5 2 2.5 3 3.5
Duty ratio Foward voltage VF (V)

Fig.5 Collector Current vs. Fig.6 Collector Current vs.


Forward Current Collector-emitter Voltage
12 7
VCE=5V
Ta=25˚C
Ta=25˚C
10 6
IF =50mA
Collector current IC (mA)

Collector current IC (mA)

5
8 40mA

4
30mA
6
3
4 20mA
2

2 10mA
1

0 0
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
Forward current IF (mA) Collector-emitter VCE (V)

Sheet No.: D3-A02501EN


5
GP1S52VJ000F

Fig.7 Collector Current vs. Fig.8 Collector-emitter Saturation Voltage


Ambient Temperature vs. Ambient Temperature
4 0.25
I F=20mA

Collector-emitter saturation voltage VCE (sat) (V)


V CE=5V IF=40mA
IC=0.5mA
0.2
3
Collector current IC (mA)

0.15
2

0.1

1
0.05

0 0
−25 0 25 50 75 100 −25 0 25 50 75 100
Ambient temperature Ta (˚C) Ambient temperature Ta (˚C)

Fig.9 Response Time vs. Load Resistance Fig.10 Test Circuit for Response Time
100
VCE= 2V
IC = 2mA
Ta =25˚C VCC Input
RD RL
Input Output Output 10%
10
Response time (μs)

90%
tf
td ts
tr
td tr tf

ts

0.1
0.01 0.1 1 10
Load resistance RL (kΩ)

Fig.11 Frequency Response Fig.12 Collector Dark Current vs.


Ambient Temperature
5 10−6
VCE=2V
VCE=20V
IC=2mA
Ta=25˚C
0
Collector dark current ICEO (A)

10−7
Voltage gain AV (dB)

−5

RL= 10−8
1kΩ 100Ω
10kΩ
−10

10−9
−15

−20 10−10
102 10 3
10 4
10 5
106 −25 0 25 50 75 100
Frequency f (Hz) Ambient temperature Ta (˚C)

Sheet No.: D3-A02501EN


6
GP1S52VJ000F

Fig.13 Detecting Position Characteristics (1) Fig.14 Detecting Position Characteristics (2)

IF=20mA, VCE=5V IF=20mA, VCE=5V


Ta=25˚C Ta=25˚C
L Shield
100 100
Relative collector current (%)

Relative collector current (%)


L
Sensor
0
Shield +
− + Sensor
0
50 50

0 0
−1.5 −1 −0.5 0 0.5 1 1.5 2 2.5 −3 −2 −1 0 1 2 3 4 5
Shield moving distance L (mm) Shield moving distance L (mm)

Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.

Sheet No.: D3-A02501EN


7
GP1S52VJ000F

■ Design Considerations
● Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Position of opaque board
Opaque board shall be installed at place 4mm or more from the top of elements.

(Example)

4mm or more

This product is not designed against irradiation and incorporates non-coherent IRED.

● Degradation
In general, the emission of the IRED used in photocouplers will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.

● Parts
This product is assembled using the below parts.

• Photodetector (qty. : 1)
Maximum Sensitivity Sensitivity
Category Material Response time (μs)
wavelength (nm) wavelength (nm)
Phototransistor Silicon (Si) 800 400 to 1 200 3

• Photo emitter (qty. : 1)


Maximum light emitting
Category Material I/O Frequency (MHz)
wavelength (nm)
Infrared emitting diode
Gallium arsenide (GaAs) 950 0.3
(non-coherent)

• Material
Case Lead frame plating

Black NORYL resin Solder dip. (Sn−3Ag−0.5Cu)

Sheet No.: D3-A02501EN


8
GP1S52VJ000F

■ Manufacturing Guidelines
● Soldering Method
Flow Soldering:
Soldering should be completed below 260˚C and within 5 s.
Please take care not to let any external force exert on lead pins.
Please don't do soldering with preheating, and please don't do soldering by reflow.

Hand soldering
Hand soldering should be completed within 3 s when the point of solder iron is below 350̊C.
Please solder within one time.
Please don't touch the terminals directly by soldering iron.
Soldered product shall treat at normal temperature.

Other notice
Please test the soldering method in actual condition and make sure the soldering works fine, since the
impact on the junction between the device and PCB varies depending on the cooling and soldering
conditions.

Flux
Some flux, which is used in soldering, may crack the package due to synergistic effect of alcohol in flux and
the rise in temperature by heat in soldering. Therefore, in using flux, please make sure that it does not have
any influence on appearance and reliability of the photointerrupter.

Sheet No.: D3-A02501EN


9
GP1S52VJ000F

● Cleaning instructions
Solvent cleaning :
Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less.

Ultrasonic cleaning :
The affect to device by ultrasonic cleaning is different by cleaning bath size, ultrasonic power output,
cleaning time, PCB size or device mounting condition etc.
Please test it in actual using condition and confirm that doesn't occur any defect before starting the ultrasonic
cleaning.

Recommended solvent materials :


Ethyl alcohol, Methyl alcohol and Isopropyl alcohol.

● Presence of ODC
This product shall not contain the following materials.
And they are not used in the production process for this product.
Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform)

Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all.

This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).
•Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated
diphenyl ethers (PBDE).

Sheet No.: D3-A02501EN


10
GP1S52VJ000F

■ Package specification
● Case package
Package materials
Anti-static plastic bag : Polyethtylene
Moltopren : Urethane
Partition : Corrugated fiberboard
Packing case : Corrugated fiberboard

Package method
100 pcs of products shall be packaged in a plastic bag, Ends shall be fixed by stoppers. The bottom ot the
packing case is covered with moltopren, and the partition is set in the packing case. Each partition should
have 1 plastic bag.
The 10 plastic bags containing a product are put in the packing case.
Moltopren should be located after all product are settled (1 packing contains 1 000 pcs).

Packing composition

Moltopren

Partition

Anti-static
plastic bag

Packing case

Sheet No.: D3-A02501EN


11
GP1S52VJ000F

■ Important Notices
· The circuit application examples in this publication with equipment that requires higher reliability such as:
are provided to explain representative applications of --- Transportation control and safety equipment (i.e.,
SHARP devices and are not intended to guarantee any aircraft, trains, automobiles, etc.)
circuit design or license any intellectual property rights. --- Traffic signals
SHARP takes no responsibility for any problems related --- Gas leakage sensor breakers
to any intellectual property right of a third party resulting --- Alarm equipment
from the use of SHARP's devices. --- Various safety devices, etc.
(iii) SHARP devices shall not be used for or in
· Contact SHARP in order to obtain the latest device connection with equipment that requires an extremely
specification sheets before using any SHARP device. high level of reliability and safety such as:
SHARP reserves the right to make changes in the --- Space applications
specifications, characteristics, data, materials, structure, --- Telecommunication equipment [trunk lines]
and other contents described herein at any time --- Nuclear power control equipment
without notice in order to improve design or reliability. --- Medical and other life support equipment (e.g.,
Manufacturing locations are also subject to change scuba).
without notice.
· If the SHARP devices listed in this publication fall
· Observe the following points when using any devices within the scope of strategic products described in the
in this publication. SHARP takes no responsibility for Foreign Exchange and Foreign Trade Law of Japan, it
damage caused by improper use of the devices which is necessary to obtain approval to export such SHARP
does not meet the conditions and absolute maximum devices.
ratings to be used specified in the relevant specification
sheet nor meet the following conditions: · This publication is the proprietary product of SHARP
(i) The devices in this publication are designed for use and is copyrighted, with all rights reserved. Under
in general electronic equipment designs such as: the copyright laws, no part of this publication may be
--- Personal computers reproduced or transmitted in any form or by any means,
--- Office automation equipment electronic or mechanical, for any purpose, in whole or in
--- Telecommunication equipment [terminal] part, without the express written permission of SHARP.
--- Test and measurement equipment Express written permission is also required before any
--- Industrial control use of this publication may be made by a third party.
--- Audio visual equipment
--- Consumer electronics · Contact and consult with a SHARP representative
(ii) Measures such as fail-safe function and redundant if there are any questions about the contents of this
design should be taken to ensure reliability and safety publication.
when SHARP devices are used for or in connection

[H150] Sheet No.: D3-A02501EN


12

GP1S52VJ000F
1
Sheet No.: D3-A02401EN
Date Oct. 3. 2005
© SHARP Corporation
Notice The content of data sheet is subject to ch
2
Sheet No.: D3-A02501EN
GP1S52VJ000F
■Internal Connection Diagram
■Outline Dimensions
(Unit : mm)
Product mass : approx. 0.4
3
Sheet No.: D3-A02501EN
GP1S52VJ000F
repeats in a 10 year cycle
Date code (2 digit)
1st digit
2nd digit
Year of  production
4
Sheet No.: D3-A02501EN
GP1S52VJ000F
■Absolute Maximum Ratings
■Electro-optical Characteristics
(Ta=25˚C)
Parameter
Symbol
R
5
Sheet No.: D3-A02501EN
GP1S52VJ000F
Fig.5 Collector Current vs. 
 
Forward Current
Fig.6 Collector Current vs.
 
Collector-
6
Sheet No.: D3-A02501EN
GP1S52VJ000F
Fig.7 Collector Current vs.
 
Ambient Temperature
Fig.8 Collector-emitter Saturation Vo
7
Sheet No.: D3-A02501EN
GP1S52VJ000F
Fig.13 Detecting Position Characteristics (1)
Fig.14 Detecting Position Characteristics
8
Sheet No.: D3-A02501EN
GP1S52VJ000F
■Design Considerations
●Design guide
1) Prevention of detection error
To prevent photoi
9
Sheet No.: D3-A02501EN
GP1S52VJ000F
■Manufacturing Guidelines
●Soldering Method
Flow Soldering:
Soldering should be complet
10
Sheet No.: D3-A02501EN
GP1S52VJ000F
●Cleaning instructions
Solvent cleaning :
Solvent temperature should be 45˚C or below.

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