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Semiconductor Notes

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43 views29 pages

Semiconductor Notes

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atg31180
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
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Commas —«- PEUNLIULTORY P bin ¥ t x t “ Metal Semiconductors Tnsul . akoxs 1 wt Pesses vous low Okey have yesistvitt of They have high rhe Re con ductivity ivtermectiatr to vesis Hvi 0 ° rye f~ 16 10a mitali and insulators Soe oats = 10D Gm 8-1 2m ow 18-16 Swi! WENERGY LEVELS) AND ENERGY BANDS IN WOLIDS oy, cass Eledwont in an atom ont amonged in discaste emery level Wa 1s ,25,2p. ©~ 10?-108S wi! o 1616" gun! Each aury level hot sowe quavtum ¢tob - iA 2—— fach quantum sak can have clmost one &- [Paul's Exuusive Principle] ———+ gn solidd out & of an otom interack of iquipicavely with tts Wig hbout and tus chang in energy tev of quantum gtatt - ——* Snarply dofined enuigy level axe split ond tum inte continuous try band. an e | | SS 45 band SASS SPWWVWVIAI IIIA 1S band > eSaeayvye f “CONDUCTION BAND” ——— + Tt fs lowest eneryt band whicn is partially filed ——> Tt is also cotted empty band of minimum energe |» This band is Powki ally Filed dg e°- ee band & can goin energy Prom external elieric sield. i+ &€ in conduction band are called Pre &- -——* Thay ont able to move anywhtr witrin volume ob solid H———> Current flows due sun €. VALENCE: BAND” -—> Highect energy band which is Cown pletely Biled. -——> way filled with €- -——+ Band ‘of maximum eneray- & ane not capable of gaivivy encrgy Prom extemal E- No Slow of wunent dit to & precent im tus band. Highect energy level whida can be occupied by an e in volenct band at OK is colled fermi level. > Energy gap blw conduction band and valince band. dn good conductors conductim band } is fee Filled in Semi conductors / inswlasors Conduction band is em 8 — ae cee Yo ee = ec ee ey? ~ Ags >3ev [Insulators] ~ ky <3ev [Semi conductors] > = AEG 2 we ieee | Deed Conducting ae Smal Band © ~ 4 1 E ; - Eg st absolute xevo temp. the valenur bond is compl exely. fined and conductim bond is Com pletely emply and consequently no Cseetca conduction can result. 4 f dE finite, temp. Some of tt & from nen +t top of valence . . P band ,rapire enough es enna to move aa +ne ee emp band -Mese & covtribute P conductim of eudrncity in O Semiconductor - ——— + dwt eldricol conductivity of a Gemicon di ctoy is lorget than tnt of om ingulador ak ‘room tempat. ——> dnt conductivip oF comiconalt Hox lies blu that metal & insulator: ——* Tht condi ctivity- of gemiconductor inlaser with temp. A» wwin an eectron is vewoved froma covalent bond it leaved a volonoy behid- > fra & move m CB while hole in VB in oppose clite ction VPHIVYYVSOV OY IV RIVET UO OWI INT “INTRINSIC SEMICONDUCTORS 3 A semiconductor Ieee guom impusite is caled ay Mbyinsic Semicondu tox Sel ‘npua ty is less Man Jin 10° pant ob gene conductor it can be treokect at intrinsic. ~*~ Whamplers- Sila) = Mt? 2g? p6 32 3p? Ge (32) = 12 267 apS 39? 3p 4d! 4e? 4p? (_) aoa eres eoeeS — cee oye Py ao) — fe a Two Drventional fosrnation 6h & hole pair wprecertation ef Crystal gtrudu of Ge at OK. a [eecieeeasraarens| =| & & 5 & Ala ae o q fy Sd dn intrinsic sent condi vor BH T>0K four +uwimally generated at TsOk behoves like © hole .: in gator a ———> dn pure sem - conductor a > Ne=Mn= Ni 2 > Ne= M0 oP Pree © po unit volume ° = Nn= N0- of holes pea uw volume = Ni = Mbinsic (onantraton >. =. > ‘Matt deen Law a NeM = ni > me” dependen ay of Resistive aS dos Conductor >. ~e TH STIS ep 2. oy emi ondu dor 2. BE marae 2. It > THNt > (ZICH > Fy a. a Ny hove four & M He outermost orbit ch atom and atome ». ow nud togetu dy coralsnt bond. e—__- Sn dat Wlouy be & greater than Mod of, ho les P.. P____, Sor tom fermi Ong leveld lie at corte of CB. and v.28. Pn pure semiconductor , impumhy must be less tha lin 108 P- fold of cenconducter. Po. f Bw juachon eof valence bond present in Conduction band is - ae by , olunt Eye Fewmi Enwy k= Boltzmann's od @nstart and T= absolue fomprrabure. P+ No. o, & sensing from valtnct bovid fo conduction band Pa? Mobi lity () de= Ne AlVdle in = Ny CAL), 1 letin= neeaOldle +n, ea (vay i= ea(MeC(Vale + Mn (ved) Fe (Metvare + My (¥a)n) Tee (Me (vale + Ny (Van) O=TE [Ohms Law] TE = e(MelVdle + Nn (Van) ze (Me Uae 4 Nh (ya ) Ne= Nye ni ——— gn Put Gomi conductor .. | Propertien Conductors | Insulators Semicon cluctors Sut bei cou a 8 ¥ “ny i Condu city 10° to 10° tim 16"-cr im lo° to 10 ~/m | Resistivity | 10" to 8am | 10am lo®to 10" a-m (negligible) P| Band Stoucwe i £8. ca | pe V8. © fata (ree) [tegereaw V8 y-8. Entagyy gop leq) | Xoro to very srtalll Very langezfox | Ge —O-1ev diamond it Is Sim bev Gev Gars—> \dev GoFs—> a Bev Cumert Corriess | Free & — tree e& and hotles Condition of V-B | y.8. 2¢-B. ant V8. - completly ¥.8.-Some what emp and c-G. at feompletiy filled | Field C8. Gomt whok filed ordinany temp-| oY CB. 18 Some CB.—Complettly wha Crap unbiied > |Tomp. coehtivent ; a as Positive no Negative m. | of vesistana * EPbect of >, ect oF temp. = [on conductivily Dernenses ai An canases » m | EPPeck of temp-onl 40 noacey y | resictana a Deucas ef J , | Example Gr Afra Nay [Wood plastic, | Ge, Si, GaAs ec. , PLsHy see. |nica et. are | eleawon densi | _i6%/n — cee CDATRENSIOm SEMICONDUCTORS din intrinsic Semiconductor condu dim Oh holes and & ig foo low. THS conduction propa can be enhanud by dibyusing Some Speupic Impuy Te prow of diPbusing on jimpuniy fs intrinsic gewiconductoy ig known at doping - dyter doping intrensic gemiconductos ig Calud extrensic Semicon ductor * Swe diiberate addition of a daivable im pug is colled hoping and innpuni atoms aw called dlopavds. ~~ cht dopavt hos to be Suth thot it doce not distort tu Original pune semiconduder lade. * Mhwt ON 400 Hoek oh dopant { P-type n- type Suivalint dopant Pertavalent Do pane Wealen og 3) Woe o- 5) InB,d ee. As,Sb, P etc ¥ -———-—._ Conan €°) fe (--——>+_-_] conduction 77 Pree 5 eS) Gnd g OOleV(eey | > ~ En Ldonay 2 SOV (Gey | a eo 3 oesev(s) leq ‘any \ | ei SS dona g Morn aT we by Valen ex Bard Nn= Dopaut conantration Ne =Np+Ne = No Ny =the ni? Nea, dw © an we ‘majority Carsies’ and we holes am te “winowy narge carrie? >. : ; Oneal = . Pentavatowd =a Neutzal eae ~ Neuteal >. ie @5—— Ne >> yi le >> Ih =—— condu Giviy © = Ne Me € energy level lies just below H2 Conduction band. 6 wT = e Mele + Nyt) { Cello Bern a. OCOTe@ | a { } Cade yoo mT acceptin Enenyy P_ (e) === =| Yo-otev ceed C= ee ae. 0-08 ev (si) , SSS S.., aSie* ae crf Vek 6 eee P= > Na = Acceptor Conwntration Nn = Natny = Na nd Nez toe t My NA a a 2 2 2 2 = a Majority thange Carsied — Inolea Minowity Urorgt Cavvies - e7 ———> Yn>Ne ; insole —— Conductivity © = Ny Une © = e(Dedte”$ My Un) © = eC) ae ey fou n= Hype, dor p-type re ts = Nota [ile 2 i, =Ny eA (Va), T= Ne €lVd)e Senge CWI, T= Ne Che T= Nye dy SUNCTION DIODES oCP=n eTUNCTION =DIODE) ~~ ®4 propevy doping impuuitieh in a senticonductor material Ont com make a p-type and N-type is same wayr ef be € + 4 ~ € € € # + | - - - = - - e- z el Shek - ee potupe gE NC sep \ (P-ype | | n-type / SH Hi> Xe Na < Np SP ods te Na> No a: [REG @ (an nal Procmat Occur I p-n Junttion 8— diffusion thdu to conanbration dijwunct at Junction hole and ¢ olitjuse Qeross jun tion. diy This cixgusion makes Ha region nou Yt Gun chin carrion Pret this is known as dapletion lox (ii) We charge appeau in depletion laym on n-sidlt of fun ction and -ye Chore Oppeats on p-side. () Wwe is now Spa dnarge clan sity in depletion region and tot is now F and P-0. ( Some of maority corriow am able to cross He barriers ainig laalng vise fe dittusion cument from p to n .side- (duc t Wah +rovmal evirgy). wi) © in dopletion vem'm helps in wigvatlen (driPs) ey Minority onary cavviet giving vise fp dugt current n to P sids- Pp een pt Cciroit Symbet ) Potype «ENC n-type * oo 0f00]@al-~ earl 26 »leo|eo - cae 0» cloolaaj. «+ o ° 0'60lool. . BP ott eden 0 Fatal knoe v en (Posword vaitoge) asohP Voltage Fos ward p-type — tve terminal Bfoswe N- tape — ve tesntinal Vt dy ——* about 0.37 for oe pn junction and about 01V for éi junction > Sn forward biasing width of dapletion layin duct eager. ——™, Atorwand 10-0 - 25-0. warren —Fpposer Potential barnien ancl for Vappiied >Vo, forward A SOL BCHOSS junc ———* Use in net) Voltages Jha voltage at whith 4no uumeut starts to § imugose vopidly For Ge it is 03Y andl for §i it is O-V - ‘ REVERSE BIASING yy [ ‘ ‘ ——*> When a positive terminal O oternal batt is conneced § ( ( ( ( f | Fe Pe to te n-vesim and nogative terminal t fu i pr ‘re: ‘men diode is sud b be reveue biased. Ee b. SWPE EINE mane ered pare Reverse Voltages al Doittued < Tyyite Vorriied Tavs Toth ~Doitvet 4 foamy (uk) Width ob depletion loyr Inentagey Rhee | Rrevese * 108g = a i re one w : idual : BB. 10 lon a ee, Y v ao Pin ee > AVALANCHE BREAKDOWN se dn case ob normal diode win reygue biased Voltage ic Inmeaced a Cousiy tre width of depletion loa is incwased . So, Herm = Qortrated e hole paiy will get Mgr KE. Unda influence of high 'E”. 2S Tn He Collgion oh e Causa que ration ot Secondary. e& hole >. Pais > Juri i HW fours FEE with make ColLision with tom present in 2 Nebion layer . =——> Evety collision Sf new & hott pax and lau Collision whith is tne wultip!Teation If treated ay Avalanche Breakdown. me > dL. is, pully becatge of thermal colli's} ov. Se Eveuy thermal collision Cause she of temperature ¢o she died el on : P be “huoted up and it cannot be wed in Avalanche Breakdown. P.. > dut to hoavy. doping Ae depletion lagen widdt is y much less Hic I becouse oh Mpunity concentration ig Wigh causing tre bult in 2 Posm we Strongly. : P, P. P. ei at P=-——> Jno Strong E will hove enough biti 4 break covalent 2 bond whith Cel g Sharp jncrsage S & hole conentrotion Ww conser drt breakdown known ag down Breakdown a VIVIV > Xener Diode has voltage regulator >| (Zener Diode Crreui? Symbet ) f Noval ‘ 4 ener diode oh ce 4 5 = Wogptied - V Vortage Regulate ee ay ener) 1 PS ee ee ee inn 0-02 oo eee ———-> j . c i¢ called Gn eettsonic olivine Whidh convats Ac int Dc K >. . Ssuuigier ee Trangtorynen V : INPUT ac Voltage a ete a a ‘CoRR | ale = >. dy : | Bercy Weel te ea i a. 7 ; pe ied pene: > a u._] 1 I | 5 4 r fe |) qurpur vafa ae a Voltage 1, Fldraati oy 06 =. ; across 1 oe Heh Posvoard biase) %F eel ae = x for = Vy = Vosin (we) t °~ WE halk Yue (Reverse biase) Voir =0 S—* Voy = te Vrms = Wa Lavy = Trax Tams = Imax Bs m= > feok dSnveue Voltage = (Vs) max -. Le ols upierenay (n) = Coc) orp x100 (Pac) itp le Re = Forward Rosistonee Of Diode Rs = Coil Resistance en pple requ (w)= Frequtny of Ac - Pe Pe a A A 2 Lad 2 ile 4 4 voltage Yo) “4 olP | tS 9 nrg ee ee ) 4) 1 y pag > Vays = AY Vems = Yo a Oe tz a Tayg = aly Tym = Im | Tr v2 ok ——_* Peak Snverse Voltage = 2(Vg)max ak ———> 4}, = (Poc)oip ene (Pac dite nes a R= FR. of Diode nae Rc = Coil Resistovia = Oridge “Type He hh pe nals Out Arm coe ie |Rectitier p< Rie ee [constant ne | | + 1 1 1 eae Fite 150.0. tw edie 00-0 2 fs 22k 2 YP a i Reuk aD A I * oo. I jen :- Vy = 6Y 6 i £-R. of each dicde = 50.0 ov Vip = 10 —16Y oa ea | OE _ ft tad if Rs =2kn 1 + =] te 8500 f= 4k ‘po 2600 6y i ats ek 200 Vz (gids = ily reanizh 300 1 Tg= bby - ied 62 bp = 5 A ne T+ & 21-6 y0A (h) max= Ts-Te tn 4 5 iy 1D = 3-SmA pow to ge ae lt gov Asuring diode is in Revene biave a 5a doy (02. ov : v Our assumption was Wroug Diode is Iw gerward pique 6 e e HP =0 flow Soive using KCL Jen} = St is usecl fo oakect optical signats = —* Jk is Bepetosd in yevoued biased =? Whin ignt fala on dhiodt such that ~ ny >b Eg or hela > AE ~ e& hole Poly is gentratid . Due fo ofactwic pith @ moved fowords n-sidt anal holes towards p- side and chovy iM wment is recorded. =— Photodiods is opmatd in wavele biased. wren fyactonal Marge im cument iq povede biased vnode is more as fom aud to forwatd biased — =. s ~ Pee w = fod 5 = P Fe N t q i, = 1 > bgt a, Jeol) al | ument : I I -— L [aca] ake Ww ~ Ty >Ig>J2 oT, St is heavity doped p-n junctLon opratrd in foxward biased. > Duo te forward biasect avol heaw | loping large no: of majority , oe Quwss He junction sie, 2° Prom Np and noley from > aN . P+ Now His rajority cavsic Combined with minority cami near Hu junction ak energy sellaseol i.e) Aynact equal ty band gap (AE4). m——> fh ts wtergy is in Tan pe of visible light teen colour Covvesponding t© that Wavelength can be seen Pes ee TD EERE RTEMT PET eT >? dn Si and Ge tis entry is Mostly convertect ivts titymal neu © nd light 'S ammitted ~* dn Gaas emerge velgasect in fom of photon avd lies in Visible setgion kavily doped : te #) Yood-rt ey E—+ p N P i Saar Lightly Doped Tg4 thor cnt four possi bie Way, of biasing the 4wo PN Jun ctions of transistors. G) Active Modes Also known as livean mode Ope vation, tii) Sarotion Modes Maximum collector current Plows and teavisistoy Gus As A closed switth Prom collector to emitter. tesnunal. i t L L L [. L L L L L a ci L L A LS A LE L ES LS MS . oh ee Gi) Cat - of mode + denote operation likt an open switch who Owly Ieokoze wument flows. W drverce modes Ihe emitter and collector are ivtn tharged Operating mode | Emitter Junetion (Je) | Coltedor Tunetion (Ie) Autve forward Roveue Soturatton forward Forward Ut off Rovoue Raverse Srvene s Rivene Forwarol A travsistor Ie moctly used tm ative region of operation ji, Cmitter base junction is forward biaged and Colledor bose Junotim i$ wseyesse biased. doom operation of junction tronsistot it is found +nat when Ument in emitter Urusit dhonge . Ju is Corres ponding dhange in Collector went - Gn eowh gtate of uansistor Huu is an tmpuk port and output post - dn quiwral coun Ucvical quantity (Vor 1) obtained at Bp iS contol led by no input or Pasion |p ie Yo g Wie Vee er ip Bose Olle choy 7 Ol? commen ee Te = Ig tc I >> Ig k> Ig Te 1g ——> Base Wuent amplification gauor (8) | —— Emefiter Cumenet dhmplidcation Gackey (a) Te=Ict la Ble 2) le Te ot aL aya Tei Te Te/Io ae ae ‘ ply ibtl ay oP es Bay tre tm dn a tuanistor i} ernmiter coment changes by 8A , collector quent dhangec by TmA tind Unawe in base wmet and abv find 6 and 4. Te=Ic+le d1¢ = dle # d1g &mA=1-4 mA +t dlg d1g=0-tmA a- ie. dk _ 74 de Ole ey, p: de 219 ag dls 01 Je Fe ; Je RB Mode > duive Je= F.8 5, ce) rise mak Ch Commen e oe pote Vee = Vee + Yeo Te= det Ie Pee. ae eee Je +I Te dig @Te= pis p= Te 2 dic Tg di, @ ip kv ~IgRe +V¥ga-Yae=0 a Veae= Yoo- Igke P~. = @ OF ky re Vee= Vee- TeRe P PeORMPLVELER 9 q dm ectuonic devin weda inuwoses He Steengin (Fowet) of 2 fine Voniyng input Signal. $4 is based on tuansister. = a Samm plificn Ee SS : f tle fs } 2 deve Suppl: “a. Pg il oe Vee 6 ie ee te ] a Veg = 1eReg Vee = Rec Je > Fe. le she Rep J Jes £8. Roctt Veo - Voc tt Rie = [se {Ri is oP ov dur of 100.0} ZM®RAAANONADNHPPRPRPRARAANRNAAH HH UANHAH AH HA HHA HAH HH HO nKananannanen Re fie = Constant Rin «(a i ip t | Ig - 2ouA 1g 10 uA Tg > SUA Vee Ven = Tek Te= Ae Vorp = Ic Power Gai, Voltage _érain ae . Ay = Vow . Te xRap Ae= (Ic) (Voir) 4y =(Te\y (I) x Roiw (35) (Te)x Rip fp = a? x heir Lip Vip Te x Rip Common Base a Troms Conduttanet = dic Veg diene oe Gig )ikiip) Rite po genre Power Gain Vol Gol = Por E a Av= Vow . Icy hove ae Vip. Ie x Rhip Ap = (Ic) (Voir) | =. = Ap = (Le) , Ce)x Ror a = (i) Ub) x Rip Common Emmiter ~~ 2 ° n : Roip Trans Conduttane = die _ die = ee Br ‘nit Woe di, x&ite A, es — ‘ Rie P—, Pain, Common Grmmiia transistor is Werkive as ayn amplified dgnal of EME P 9p uli volt is connected with wt dace. Tm bare wment changes P— \y20 MA and comector ument changer by amf - Given load >, fasistant S000 V. dinds ty B WD wes Conductanet (ily Snput swonistanet (iid Voltage Gain Wy) Powet Gain dt, = @0x16°A dic = 2 x64 thB= die = 190 big GW WViip = (dtiyp)x & tip <3 Rip = 20x! - 1000 P dox 106 wid Aye Bx fo Rie Av= loo x S060 \poo = $00 Ape Bxdy =100x500 Ap = 5x10" W GB . 1.5, i Riip 1008 wk Yor a Common Emmiter duansistor Amplifier tt audio Vignal voltage across fro collected retistand of 2000 2 fs 2v.42 coment amplification fartor is 100 - AY, |» (Avs (Avy {lAv), Vo} % ly Latin | alr OlP= (Av, xAv: xAVax---) Yo WW. d commen emitter transi¢or is input Multan is 500-2 and load wuistong = Goo.0 . §f base wment chorgel by MA, Collector urccent qhovgel by 2mA Bind cixwrevt amplification favor. Ww vo lage qn Wy Power qo" ® Be dle , ax ii? dip |g x16" Wo Ave px an 600 S $00 ti) Ap= px Row . dx 10 Goo Rip is 500

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