SCHOTTKY DIODES ( HOT - CARRIER ) pag A 1

Schottky diodes selection guide

For HIGH SENSITIVITY , ZERO-BIAS or LOW BARRIER applications
--- for lab detectors as RF detector with sweep generator
--- RF fields detector, electromagnetic pollution, TAG , etc…
--- passive or active mobile phones and bugs detector
diode TSS Glass SMD Ceramic or special
(tangential sensitivity) case case case
HSMS 2850 - 2851
-59 dBm @ 2 GHz
SMS 7630
-55 dBm @ 10 GHz these are the much sensitive diodes at
usable up to 18 GHz ZERO BIAS
-53 dBm @ 2 GHz ND 4991 - 1SS276 DDC2353
-55 dBm @ 6 GHz LOW BARRIER up to 20 GHz
from -54 dBm to -52 dBm all BAT 15… types are LOW BARRIER
up to 24 GHz depending on type high sensitivity vatious types available
-56 dBm @ 2 GHz with bias HP 5082-2824 HSMS.282…series
low barrier, up to millimeter freq. beam lead version
version with leads of the famous 1N821 point-contact
1N21 - 23 silicon , up to 5 GHz
NOTE : high sensitivity silicon or germanium diodes for detectors are available too, see VARIOUS DIODES

for : RECEIVING MIXERS - RF DETECTORS - SAMPLING

freq. config. glass case SMD or plastic case ceramic case
up to 500 MHz BAT 42 - 43 - 46 - 48 - 85 - 86 BAS 40-…- BAT 64-....
5082.2800 - BAT 45 - 82 - 83
up to single HSCH 1001
HSMS 28.... , BAT 68

2 GHz pair 5082.2804 BAS 70... , HSMS 28...

quad 5082.2836 ND 487C1-3R
up to 5082.2810, 2811, 2817 2824,
HSMS 2810 , 2820
single 2835, 2900, MA4853 ND4991
BAT 17 , BAT 68
3-5 1SS154 ,BA 481, QSCH 5374
pair 5082.2826, 2912 HSMS 28….
GHz quad HP 5082.2815, 2826 HSMS 2808 HP 5082.2830, 2831, 2231
DC 1501EP - HSMS 2850 - 2851
up to single BAT15... various types, BAT62- DC 1501E (max 18 GHz)
6 - 12 03W-02W
pair BAT 15-099 , BAT 62…. BAT 15 099 – MA4E 501
GHz
quad HSMS 8207 + 8209 HP5082.2277, HSCH 6812
up to single 5082-2202, 2751, DC1304A, DH363
18 GHz pair HSMS 8202 - MA4E1245 ( 2 sel. diodes ) MA4E522, DH 340
up to BAT14-104 , MA4E 920 ,
24 - 30 single MA40133 + BAT14-B beam lead
GHz case

> 20 GHz single: HSCH 9101 , DC 1308 , HSCH5340-DMB2856 , MA4E 2037 , BAT14-110S
for bonding antiparallel: HSCH 9251, MA4E 997
beam - lead case pair: BAT 14-050D, 090D, BAT 15-090D, HSCH 5531 --- quad: MA4E400H

FREQUENCY Vs. CAPACITANCE

the graph indicate the operating optimal frequency range
of a SCHOTTKY diode in relation to the of junction
capacitance. The area between in the two curves is the
recommended range of max. junction capacities for the
desired frequency.
For example at 4 GHz the optimum junction capacitance
is ≤ 1pF. Lower junction capacities (so better diode
performances) can be obviously used even if it not lead
to significant improvement.

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 SCHOTTKY DIODES ( HOT - CARRIER ) pag A 2

glass case single diodes

CJ VR VF CJ @ ØVR , CJ decreases a lot with bias or local oscillator
price € each
pF V V VF @ 1mA NB typical values cod. 1+ 4+ 10+
pcs pcs pcs
they are similar types , up to 2 GHz suitable as detector HSCH-1001
2.2 60 0,70 0,65 0,60
and up to 1.5 GHz as mixer, HSCH1001-1N6263- = 1N 6263
2.2 60 0.38 SD101A are used also as protection for RX input in HF SD 101A 0,70 0,62 0,55
and VHF frequencies due to their low capacitance and 5082-2800
2 70 low switching time 1,70 1,60 1,50
1N 5711
general purpose, mixer and detector diode up to 3 GHz,
1.2 20 0.36 it is also available in some SMD versions HSMS 281... type 5082-2810 -- -- --
or with glass case 5082-2811
1.2 15 0.37 general purpose, mixer and detector diode up to 3 GHz 5082-2811 2,90 2,80 2,70
this diode is a very good mixer and detector, it dissipates up
1 15 0.35 to 1/4W to 200 °C, low Flicker noise 1/F with bias 20 uA and 5082-2824 2,60 2,50 2,40
high Tss sensitivity -56dBm / 2GHz see AN hp 923 (HP 11$ )
1 8 0.34 up to 5 GHz, low noise mixer up to 3GHz = HSMS 282… 5082-2835 2,50 2,40 2,30
up to 3 GHz, very good performances as low noise mixer
1.2 10 0.33 5082-2900 2,00 1,90 1,80
and low 1/F noise, see HP applic. notes ( HP list 4 $ )
BAT46 (=
5 100 0.33 high voltage 0,40 0,36 0,33
BAT41)
7 30 0.28 for HF and VHF high sensitivity and high current 200 mA BAT 42 0,30 0,27 0,25
6 30 0.30
frequencies high current up to 200 mA BAT 43 0,30 0,27 0,25
detector , mixer , high current up to 350 mA
10 40 0,30 BAT 48 0,30 0,26 0,23
fast switch, etc…
8 30 0.28 high sensitivity BAT 85 0,25 0,22 0,20
7 50 0.28 high sensitivity BAT 86 0,25 0,22 0,20
1,4 50 0,38 up to 2 GHz , mixer and detector BAT 82 0,40 0,36 0,33
1.4 60 0.38 up to 2 GHz , mixer and detector BAT 83 0,40 0,36 0,33
1 6 0.35 up to 2-3 GHz , mixer and detector BAT 45 0,50 0,45 0,40
very good power detector up to 4 GHz, and mixer up to
1 4 0.35 BA 481 0,50 0,45 0,40
2.5 GHz
0.7 3 0,26 very good mixer and detector up to 5 - 8 GHz QSCH 5374 4,80
high sesitivity Tss = -55 dBm , suitable for laboratory
0.8 detectors, it is similar to HP 423-HP8472 detector or ND 4991 5,30 4,90 4,70
3 0.20 as low LO level mixer up to 5 GHz . LOW
ND4991 is a good replacement to the input mixer BARRIER
diode for spectrum analyzer HP 141 HP 8554B up
0.7 to 1.2 GHz and HP 8558 up to 1.5 GHz 1SS 276 5,00 4,50 4,50

matched pairs and matched quads

These Schottky diodes are provided as selected pairs, quads or in custom quantities. They are exactly the
same as those supplied as single but they are matched to guarantee the same capacitance and forward
voltage of all units, they can be used for example as mixers, sampling, multipliers, etc.... For the
characteristics please refer to the original code of the single diode eg.: 5082-2836 = single type 5082-
2800, those provided in custom matched quantity (2 or more units) have an accuracy within 0.1 pF of
junction capacitance and 20 mV of forward voltage in the selection.
original diode as provided cod. price €
5082-2800 matched pair ∆VF = 20mV 5082-2804 3,60 / pair
5082-2800 custom matched quantity ∆VF = 20mV , ∆CJ = 0.1pF 5082-2836 1,80 / each
matched quad , spare part for sampling probe, HP3406A +
5082-2811
Racal RF voltmeters, etc… 5082-2815 13,00 / quad
5082-2811 custom matched quantity ∆VF = 10mV , ∆CJ = 0.1pF 5082-2826 3,25 / each
5082-2900 matched pair ∆VF = 30mV ( HP list 8,50 $ ) 5082-2912 4,10 / pair

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continue , SCHOTTKY DIODES ( HOT - CARRIER ) pag A 3

Matched quads in a single case ( ceramic or SMD )

These Schottky diodes, unlike to those reported in the previous page, are provided only as quad
configuration but in a single case, of course they are internally matched quads
CJ @ ØVR , CJ decreases a lot with price € each
Cj VR VF
configuration
pF V V
bias or local oscillator
VF @ 1mA typical values
cod. 1+ 4+ 10+
pcs pcs pcs
low barrier up to 2 GHz , cross-over
ring cross-over 1 0.2
ring , Nec ND-487C1-3R ND 487C1 3,00 2,85 2,65
up to 10 GHz Ct max 0.5 pF,
0.4 0.35 5082-2277 3,50 3,30 3,10
ceramic case
0.5 0.4 up to 3 GHz , ceramic case 5082-2830 6,40
ring
( normal ) up to 3 GHz, low barrier, ceramic
0.5 0.25 5082-2831 3,50 3,30 3,10
case
up to 12GHz, HI REL hermetic
0.25 4 0.43 HSCH-6812 16,00
ceramic case

2 couples of diodes in series, each

cuople has the central tap in bridge
quad configuration, for sampling
bridge
( unconnected )
1 15 0,30 up to 4 GHz or HSMS-282P 1,20 1,05 0,90
detector and voltage doubler
RD 12 Ω , LifeTime 100<pS ,
∆Vf <15 mV , ∆Cj <0.2 pF

ring cross-over 1 15 0,30 as mixer up to 4 GHz HSMS-2829 2,50

CT < 0.26 pF , ∆CT < 0.04 pF

dynamic resistance < 14 Ω
∆ dynamic resistance < 2 Ω
ring ( normal ) 0.2 4 0,30 HSMS-8207 4,30
∆VF < 20 mV ,
@ 12 GHz 6.3 dB conversion
loss typ.
BAT-14-
0.4 4 0.40 these 2 diodes are pin
compatible with HSMS 8209 , 099R see
ring cross-over
BAT.. except for a little difference in BAT-15- HSMS-8209
0.4 4 0,25 forward voltage
099R

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continue , SCHOTTKY DIODES ( HOT - CARRIER ) pag A 4

For microwave - ceramic

CJ VR VF CJ @ ØVR , CJ decreases a lot with bias or local oscillator
or plastic case
price € each
pF V V VF @ 1mA NB typical values cod. 1 - 10 pcs
0.18 4 0.43 it is the version with hermetic ceramic case of the 2207 5082-2202 16,50
up to 18GHz , low Flicker noise 1/F with bias 20uA
0.1 4 0.43 and high sesitivity Tss -55dBm @ 10GHz hermetic 5082-2751 14,50
gold plated ceramic case
5082-2207 and 2209 with plastic-ceramic case are replaceable with 5082-2202
0.25 4 0.4 matched pair , up to 18 GHz , ceramic case DMK 6635 on request
0.2 3 plastic case for microwave general purpose DC 1501 EP 3,10
GaAs, NF 6dB @ 10GHz, mixer and detector
0.1 3
up to 14GHz
DC 1304 A 5,20
mixer up to 18 GHz , single diode for cavity mounting DH 363-04 on request
0.22 4 0.43 mixer up to 18 GHz provided as matched pair with MA4E 522M 18,00 /
HI-REL ceramic case DH 340 matched pair
2 diodes in series with central tap for mixer up to 15
0.3 3 0.3
GHz with HI-REL gold plated ceramic case
MA4E 501 8,80
mixer up to 24GHz and detector up to 30GHz, harmonic
0.13 3 0.42 mixer up to 33GHz (see VHF Comm. 3-95 ) chip ceramic BAT 14-104 21,00
case
ceramic case specified up to 24 GHz with NF<7.5dB MA4E 920-
3 0.42 22,00
recommended for mixers up to 30GHz 276
0.1 3 0.3 see description on the next page MA4E 2502L on request
ZERO BIAS suitable as detector up to microwave
[Link]- 20 GHz high sensitivity, HI-REL hermetic gold 1 - 3 pcs 5,90
0.2 4 0.21 plated ceramic case ( case 240 ) , TSS -52 dBm DDC 2353 4 - 9 pcs 5,40
former Alpha DCC 4717 ( now Skyworks DCC 2353- 10 + pcs 4,90
240 )

Comparison with several commercial RF detectors

and the Schottky diode DDC 2353
dc output from each type of detectors
RF DDC 2353 Telonic Suhner HP 8472A HP 8470B Alfred 1001
input zero bias 8554 1001.01A point low barrier point
level schottky low barrier low barrier contact diode schottky contact diode
schottky schottky #1 -- # 2
dBm ( @ 10 GHz ) ( @ 1 GHz ) ( @ 1 GHz ) ( @ 10 GHz ) ( @ 10 GHz ) ( @ 10 GHz )
- 30 1.5 mV 0.84 mV 0.41 mV 0.98 mV 0.85 0.7 mV 0.8 mV
-25 4.5 mV 2.1 mV 1.7 mV 2.7 mV 2.4 2.1 mV 2.2 mV
-20 14 mV 8.1 mV 5.5 mV 8 mV 7.3 6.3 mV 6.4 mV
-15 38 mV 19 mV 16.4 mV 22 mV 20 18 mV 18 mV
-10 85 mV 59 mV 43 mV 54 mV 50 4.8 mV 46 mV
-5 180 mV 115 mV 103 mV 120 mV 113 110 mV 106 mV
-0 360 mV 280 mV 226 mV 246 mV 234 233 mV 223 mV
+5 698 mV 503 mV 460 mV 480 mV 460 470 mV 440 mV
Note: the sensitivity of the DDC 2353 diode, judging from the table, would seem to be much higher than very famous
and expensive RF detectors, this is due to the fact that commercial detectors are all equipped with a matching network
on the diode that causes a loss of about 3 dB compared to our diode that has been tested without a matching network
instead. The result is that the real sensitivity of the diodes is quite similar among the various types.

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continue , SCHOTTKY DIODES ( HOT - CARRIER ) pag A 5

Beam lead diodes substitution with MA 4E 2502L

A cross between microwave ceramic diodes and millimeter beam leads
To achieve high performances in microwave or millimeter frequencies it is common knowledge
that is necessary to use beam lead diodes because their package reduces capacitance and
parasitic inductance values. However beam lead diodes are extremely fragile and not easy to
handle, so specific techniques and sophisticated equipments are needed.

MaCom has developed a cheap glass package with very low parasitic capacitance comparable to
those of beam leads, since it is glass made it has a higher strength showing many similarities to
beam lead diodes. This package is so robust that (for high volume production) it is provided in
reels as normal SMD components, its size is 0502 or 1.1 x 0.46 mm.

Manufacturing takes place with direct overlap of silicon on a glass support with a thickness of only
0.15 mm so with vias with very low series inductance.
We recommend to use these diodes to those who have to replace beam lead diodes for mixers
and low barrier microwave detectors. A typical application is the replacement of faulty diodes in
spectrum analyzer mixer example of spectrum analyzers, special detectors, etc..., or for all
applications up to millimeter frequencies where it is very difficult to replace beam lead diodes, the
low parasitic capacitance, typically 0.1 pF, allows the use this diodes up to 25-50 GHz
Low barrier @ 1 mA 0.3 V typ. 0.33 V max Forward current max 20 mA
Vb @ 10µA 5 V typ. 3 V min RF CW incident power max +20 dBm
Cj @ 0V 0.1 pF typ. 0.12 pF max Dissipation power max 50 mW
Series inductance max 0.8 nH Rs 12.8 Ω

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 continue , SMD SCHOTTKY DIODES ( HOT - CARRIER ) pag A 6
price € each
CJ VR VF CJ @ ØVR , CJ decreases a lot with bias or local oscillator
pF V V VF @ 1mA NB typical values cod. 1+ 4+ 10+
pcs pcs pcs
2 70 0,33 single diode, up to 2 GHz HSMS - 2800 0,90 0,80 0,70
2 70 0.33 2 diodes in series, up to 2 GHz HSMS - 2802 0,90 0,80 0,70
2 70 0,33 2 diodes with common anode, up to 2 GHz HSMS - 2803 0,90 0,80 0,70
2 diodes not connected up to HP - Agilent version HSMS - 2805 1,00 0,90 0,80
2 70 0.33
2 GHz MaCom version MA4CS 101E 0,85 0,75 0,65
1.2 20 0.36 single diode , up to 3 GHz HSMS - 2810 0,85 0,75 0,65
1.2 20 0.36 2 diodes in series, up to 3 GHz HSMS - 2812 0,85 0,75 0,65
2 common anode diodes up to 3 GHz for multipliers,
1.2 20 0.36 HSMS - 2813 1,00 0,90 0,85
mixers, etc...
1.2 20 0.36 2 diodes with common cathode up to 3 GHz HSMS - 2814 0,85 0,75 0,65
1.2 20 0.36 2 diodes not connected HSMS - 2815 on request
1 15 0.33 single diode to 4 GHz Tss -56dBm @ 1 GHz with bias HSMS - 2820 0,85 0,75 0,65
1 15 0.33 2 diodes in series up to 5 GHz , Tss as above HSMS - 2822 0,85 0,75 0,65
1 15 0.33 2 common anode diodes up to 5 GHz , Tss as above HSMS - 2823 0,85 0,80 0,75
1 15 0.33 2 common cathode diodes up to 5 GHz , Tss as bove HSMS - 2824 0,85 0,75 0,65
1 15 0.33 2 diodes not connected , Tss as above HSMS - 2825 0,85 0,75 0,65
2 diodes not connected, it is a version with high
1 15 0.33 insulation between the 2 diodes and central short HSMS - 282K 1,50
circuit
quad with 2 pairs in series with central tap for bridge
1 15 0,33 configuration, quad for sampling up to 4GHz, RD 12Ω, HSMS - 282P 1,20 1,05 0,95
LifeTime 100<pS , ∆Vf <15 mV
up to 2 GHz as mixer, detector or fast switch and limiter, HSMS - 2840
2.2 50 0.32 1,60
similar to HP-5082-2800 glass type (=HSMS 2800)
SMD version of HSCH3486 , Tss at zero bias -
57dBm @ 1GHz -55dBm @ 6 GHz -- voltage 2,30 2,15 2,00
sensitivity Y with -40dBm = 40 mV/µW @ 1GHz HSMS - 2850
and 22mV/µW @ 6GHz
0.28 2 0.20 ZERO BIAS
Between the 2 models there are no electrical
differences, one is connected on the right side the HSMS - 2851 2,50 2,35 2,20
other on the left side of the case.
See aslo SMS 7630-001
MaCom 2 diodes in series , mixer and detector up MA4E1245KB 3,10 3,00 2,90
0.22 4 0.29 to 14-16 GHz, 6dBNF @ 10 GHz, ( = MA4E2054B )
HP-Agilent Tss -55dBm with bias 20µA , RD 14 Ω HSMS - 8202 3,10 3,00 2,90
general purpose detector 2 diodes in series BAS 40 - 04 0,25 0,22 0,20
up to 500MHz , limiter for 2 common cathode diodes
4 40 0.31 BAS 40 - 05 0,25 0,22 0,20
RX protection up to
400 MHz 2 diodes not connected BAS 40 - 07 0,30 0,27 0,25
detector and protection on 2 diodes in series BAS 70 - 04 0,40 0,35 0,30
intrumentation and
1.5 70 0.35 receivers up to 2GHz, 2 common anode diodes BAS 70 - 06 0,40 0,35 0,30
SMD version of the
famous 5082-2800 2 diodes not connected BAS 70 - 07 0,40 0,35 0,30
ring quads for mixers up to 12GHz , BAT15 high
0.4 sensitivity , BAT14 normal sensitivity. In Matiaz
BAT 14 - 099R
Vidmar’s projects they are replaceable with not available
0.4 4 see replacement
HP5082-2831 up to 3 GHz , and 2277 > 3 GHz
0.25 BAT 15 - 099R
because only 2 opposite terminal are used even if
the case is different, or see HSMS 8209
LOW BARRIER high sensitivity detector, BAT 15 - 03W 1,50 1,35 1,20
0.3 4 0.23 microwave mixer and detector, LOW BARRIER
suitable also over 20 GHz BAT 15 - 098 3,00
0.3 4 0.23 Sot 143 case, 2 BAT15-098 diodes not connected BAT 15 - 099 2,50 2,40 2,30
0.8 4 0.34 up to 5 GHz , good linearity detector up to 3 GHz BAT 17 0,50 0,45 0,40
10 30 0.32 high current up to 200 mA BAT 54 0,25 0,20 0,18

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continue , SMD SCHOTTKY DIODES ( HOT - CARRIER ) pag A 7
CJ VR VF CJ @ ØVR , CJ decreases a lot with bias or local oscillator
price € each
pF V V VF @ 1mA NB typical values cod. 1+ 4+ 10+
pcs pcs pcs
2 diodes not connected BAT 62 1,10 1,00 0,90
RF detector
max 6 - 8 GHz single SMD diode, low inductance 1 - 4 pcs 0,60
0.4 40 0.43 BAT 62 - 02W
see description series ultraminiature 5 - 9 pcs 0,50
below 10-29 pcs 0,40
SOD 323 case single diode BAT 62 - 03W 30-99 pcs 0,30
general purpose up to 500 single diode BAT 64 0,30 0,25 0,20
MHz and suitable as
4 40 0.32 2 diodes in series BAT 64 - 04 0,30 0,25 0,20
protection, clipper, peak
limiter, transient on RF lines 2 common anode diodes BAT 64 - 06 0,40
1 8 0.34 mixer up to 2 GHz and detector up to 4 GHz BAT 68 0,70 0,60 0,50
zero bias very high sensitivity , up to 10 GHz, SMS 7630-001
0.28 0.18 similar to HSMS 285... series, it is the most ( SMS 3994-00 ) 2,00 1,85 1,70
sensible among zero bias diodes ZERO BIAS

BAT 62-02W and 03W , low cost schottky

detector diodes up to microwave frequencies
BAT 62-03W and 02W are Infineon ( Siemens ) Schottky diodes for RF general purpose
applications, thanks to their very low junction capacitance they can be used as RF detector
from LF to microwave frequencies , typical to 6 GHz , and also to 10 GHz if the signal is
quite powerful . The SMD low cost case , SOD323 , has a little residual inductance of 2 nH
while the BAT 62-02W has a small SMD case SCD 80 and it is suitable for higher
frequencies thanks to its very low residual inductance of only 0.6 nH . BAT62 series are
also optimal for circuit protection against voltage spikes as clipping or clamping in
telecommunications equipment , data line and , thanks to the very low residual capacitance
also in front-end for receivers see application note Infineon N° 065 . They are also useful
as detector ( both forwarded and reflected power ) , for high power together with a
directional coupler or directly to the RF for signal at medium-lower power thanks to the
reverse 40V.
Reverse Voltage 40 V case
BAT
Reverse Current < 10 µA @ VR 40V SOD
323 62-03W
Junction capacitance typ. 0.35 pF - max 0.6 pF
Forward current max 40 mA case
BAT
Forward voltage 0.43 V @ 1 mA SCD80
SOD523 62-02W
Series inductance to ground 2 nH 03W -- 0.6nH 02W

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continue , SMD SCHOTTKY DIODES ( HOT - CARRIER ) pag A 8

Beam lead - chip DIE for bonding or millimeter waves

ATTENTION : beam lead and die components have nearly microscopic size , in order to mount
them you need to use particular techniques like bonding or silver glue , besides
a microscope is needed .

CJ VR VF CJ @ ØVR , CJ decreases a lot with bias or local oscillator price € each

pF V V VF @ 1mA NB typical values cod. 1 - 10 pcs
0.05 4.5 0.68 GaAs, specified for 44 GHz 6.7dBNF, up to 200GHz see Dubus 2-94 HSCH - 9101 26,00
GaAs , double diode HSCH 9101 parallel pair in a single case for
0.05 4.5 0.68
sub-harmonic mixer up to 100 GHz HSCH - 9251 37,00
up to 30 - 40 GHz, 7.5dBNF@ 26 GHz - Rs < 20 Ω Tss -54dBm DMB 2856
0.1 4 0.35
@ 10 GHz with 10 µA bias
15,00
( = HSCH 5340 )
0.08 4 GaAs specified for 35 GHz with NF 10 dB DC 1308 19,00
0.2 4 0.47 Pair connected in series with central tap, Tss -48dBm BAT 14-050 D 11,00 - 8,50
0.14 4 0.49 Pair connected in series with central tap up to 24 GHz BAT 14-090 D 16,00
single diode, it has the lowest residual capacitance of the BAT 14
0,1 4 0,50 family, for mixers and detectors up to 40 GHz , 7 dBNF @ 16 GHz BAT 14-110 S 16,00
OL 0dBm Rs 10 Ω , similar to chip ceramic BAT 14-124
low barrier as BAT14-090D high sensitivity Tss = -53dBm, 22,00
0.14 4 0.3
up to 24 GHz BAT 15-090 D finishing
GaAs for millimeter frequencies MA4E 2037 on request
0.06 5 0,7
GaAs for millimeter frequencies MA4E 2039 on request
0.1 2 0.31 up to 40 GHz , mixer with 7.5 dBNF @ 16 GHz , Rs 18 Ω MA 40131 on request
( = HSCH 5312 ) up to 30 - 40 GHz , beam strenght up to 10 g
0.1 3 0.41
Very good mixer with average LO level
MA 40133 15,00
high tangential sensitivity -56dBm (without bias) 1 pc = 10,00
M2X4147
0.14 6.5 0.2 very good low barrier as detector diode for millimeter frequencies 50 pcs = 3,80
= BAT 30 or DCC 2351-24 ZERO BIAS each
5 0.6 bridge quad, Cj from 0.05 to 0.25 pF, Macom 906 case MA 4E 400H-906 15,00
glass case Surmount type ( not beam lead ) , see more detailed
0.1 3 0.3
informations on the previous pages in microwave diodes
MA 4E 2502L on request
0.15 3 0.45 chip die, up to 26 GHz BAT 14-B
chip die similar to 5082-2811 up to 3 GHz ,it is used as mixer in some on request
1 15
HP spectrum analyzers 5082-0097
Cj 0.07-0.12 pF , up to 100 GHz , Rs 9 Ω , Rd 18 Ω , Fco 253 GHz
0.1 5 0,52
Aeroflex-Metelics MSS50-146-B10B
MSS50-146 16,00

REPLACEMENTS for schottky diodes : BAR10 with 5082-2810 -- BAR 11 with 5082-2810 -- BAR 18 with HSMS-2840
BAR 28 with HP5082-2800 -- BAR 29 with HSMS-2820 -- BAR 43 with BAT 54 --- BAS 70 with HSMS-2840
BAS 125-05 with HSMS-2814 -- BAS 125-06 with HSMS-2813 -- BAS 125-07 with HSMS-2825
BAT 14-03W and BAT 14-098 with BAT 62-03W -- BAT 14-099 with HSMS-8202 or MA4E1245KB if connected in series or
antiparallel -- BAT 16 glass case with SMD BAT62-03W -- BAT 17.... with HSMS 282.. with same configuration
BAT 19 with 5082-2811 -- BAT 41 with BAT 46 -- BAT 47 with BAT 46 -- BAT 64 with HSMS-2840
BAT 64-04 with HSMS-2802 -- BAT 68 - ... eith HSMS-282... with same configuration

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 VARICAP DIODES -- glass or plastic case pag A 9
USEFUL INFOS ABOUT VARICAP DIODES
CAPACITANCE the minimum capacitance of a varicap diode is reached at the maximum reverse voltage applied
RANGE (= Vr ), the maximum capacitance is reached at 0 V
it is the Q (or Rs) factor, some manufacturers indicate the Q factor and other the
Series Resistance, the Q is calculable with the formula here reported. Q or Rs are
Q FACTOR specified at a certain frequency and capacitance value, in the table is written in 1
Q=
Q or Rs some cases the Q (underlined number) or the Rs, follows the frequency in MHz at ω • Rs • C
which the measure is done, the last is the capacitance value associated with the
measure.
Vr maximum reverse voltage available.
it is the obtainable capacitance variation ratio from the minimum to the maximum
applied voltage, i.e. with an applied voltage from 0V to Vr.
∆c Varicap diodes with a capacitance ratio ∆c < 3 are considered standard, with ∆c =
cap. max
from 3 to 5 are abrupt type and with ∆c > 5 are hyperabrupt type. cap. min

cap. (pF) Q-MHz-pF price € each

C min. at Vmax C max at 0V Vr=Vmax
min max
or Vr Q expressed as Q factor or series resistance Rs cod. 1+ 4+ 10+
RS-MHz-pF pcs pcs pcs
28 65 0.5-30-50 20 HF - VHF , very good also for AFC BA 111 0,45 0,40 0,35
VHF - UHF provided in couples , 2 matched
2.7 16 100-50-11 28
diodes BA 142 1,20 / pair
6 18 0.8-100-10 25 suitable also for AFC BB 100 0,50 0,45 0,40
5 40 0.4-200-25 28
VHF-UHF , guaranteed for a repeatability BB 106 0,55 0,50 0,45
< 3% among every diode = BB 109G
the plastic case is obsolete and no more BB 112
15 550 400- 0.5- 500 12 see BB 510
available, it is replaced with SMD BB 510 BB 212
HF - VHF suitable also for AFC 0,30
18 36 1-200-22 15
special offer, minimum buyable quantity 10 pcs BB 119 min. 10 pcs
0,4
2.7 22 200-100-10 28 HF - VHF - UHF , Q specified 100 KHz - 1 GHz BB 122 0,50 0,45
0
5 35 0.5-470-9 30 replaceable with BB 909 BB 139 see BB 909
double diode with common
15 65 0.3-100-38 30 cathode, see also the BB 204 = BB104 0,65 0,60 0,55
cheaper SMD KV1470
2 18 0.6-470-9 30 VHF - UHF very good Q in UHF BB 221 = BB521 0,55 0,50 0,45
2.2 18 0.9-470-9 30 VHF - UHF BB 222 0,60
they are 2 versions in different case of the same BB 209 plastic 0,65
2.8 40 0.8-330-12 30 diode, wide capacitance range ∆c > 10 , Q =250
at 300MHz at 3pF Q =180 at 50MHz at 30pF BB 229 glass 0,55 0,50 0,45
double diode ( values referred
20 45 200-100-38 30
to single diode ) BB 304 0,65 0,60 0,55

HF - VHF , wide capacitance range with ∆c > BB 329

2.8 45 200-20-25 30 0,50 0,45 0,40
12 and high Q BB 329A
VHF-UHF up to 2.5 GHz , very good
0.75-470 BB 405B
2 18 30 performances and high Q, guaranteed for a 0,55 0,50 0,45
9 pF = BB 105-BB 205
repeatability < 3% among every diode
guaranteed for a repeatability < 3% among
2 23 0.6-470-9 28 BB 505 0,60 0,55 0,50
every diode, = BB515 and SMD BB535
the plastic case is obsolete and no more
25 600 200-1-500 12
available, replaced with SMD BB 510
BB 509 see BB 510
see BB329
3 45 0.7-100-12 30 wide capacitance range BB 609 or BB909
4.5 50 0.5-200-25 28 BB 809 see BB909
3 45 30 BB 909 0,50 0,45 0,40
VHF - UHF , with wide capacitance range,
guaranteed for a repeatability < 3% among
0.7-100-30
2.5 40 30 every diode , = BBY40 cheaper SMD case BB 910 0,60

continue

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continue VARICAP DIODES -- glass or plastic case pag A 10
cap. (pF) Q-MHz-pF price € each
for the explanation of the used terms ( cap
or Vr cod. 1+ 4+ 10+
min max RS-MHz-pF pF - Q - Rs - Vr - ∆c ) see previous pages pcs pcs pcs
for HF - VHF very wide capacitance range
2.7 75 1.5-100-40 30 ∆c >21, typical >25 , the same of BB640 or BB 911-911A 0,70
= BB 531
SMD BB164
up to 3 GHz Hyperabrupt very high Q ,
1.2 4.5 400-50-3.5 22 BBY 36 Siem. 1,65
good performances ( Siemens price list 10 € )
this Fujitsu diode has very good
2.5 30 200-50-9 15 performances like high Q , wide capacitance
range 1 - 10 V and very good linearity, in fact
it was used in 70 or 140 MHz low distortion FC 54 0,55 0,50 0,45
for high linearity modulators on microwave radio links,
guaranteed for a repeatability < 3% among Fuji
modulators
every diode
high Q , with wide capacitance range within
6 60 500-1-45 12 DKV 6510 0,85 0,80 0,75
2 - 10 V
linear response Freq/ V tune
see
32 450
description
25 high Q ≥700 at 10 MHz at 200 pF or Q ≥150 DKV 6525 11,80
at 50 MHz at 200 pF
similar to BB909 and BB910, VHF - UHF ,
2.8 50 0.9-100-30 30 HVS 303 0,50 0,45 0,40
with wide capacitance range
double common cathode varicap
diode with very wide capacitance
range even only within 1 - 6 V ,
18 650 300-1-500 20 KV 1590 NT 3,20
narrow tolerance on capacitance
variation between diodes typical
within 2%, high linearity
3.5 30 300-50-20 hiperabrupt VHF - UHF, high ∆c ratio MA4ST 520D 1,20
high Q and performances with thermal
2.3 16 450-50-11 22 MA4ST 533C 1,60
stability within 200ppm/°C
wide capacitance range with only 1-10V and
very good linearity / voltage / capacitance /
25 600 200-1MHz 12 MV 1401 9,50
frequency, very good as low distortion
modulator
for MW - HF - VHF , similar to MV 2109 and
20 90 150-50-40 28 SMV 709 0,70
MV 2209
4 26 250-50-15 60 high Q > 250 at +4 V = 15 pF 1N 5142 Mot. 1,90
3 15 450-50-7 30 high Q > 450 at +4 V = 7 pF 1N 5441 A Mot. 1,20 1,10 1,00
2.2 18 0.5-470-14 28 for VHF UHF VCOs 1T 32 1,00
30 65 100-50-40 15 HF - VHF , also for AFC 1S 1658 0,60
2.5 25 0.8-50-9 28 VHF - UHF , high ∆c ratio 1S 2208 0,60
21 85 100-50-50 15 HF – VHF 1SV 74 =1SV89 0,60 0,55 0,50
Hyperabrupt high Q , it is the varicap diode
0.7 5.5 150-50-4 28 with the lowest minimum capacitance, very 1SV 183 0,80 0,75 0,70
godd for UHF and 2.4 GHz VCOs

continue

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 continue VARICAP DIODES -- SMD pag A 11
cap. ( pF) Q-MHz-pF price € each
for the explanation of the used terms ( cap
or Vr case
pF - Q - Rs - Vr - ∆c ) see previous pages cod. 1+ 4+ 10+
min max
RS-MHz-pF pcs pcs pcs
Sod for VHF – UHF, wide capacitance range
1 15 3 - 470 - 9 30 323 BB 131 0,45 0,40 0,36
and good linearity
HF - VHF, very wide capacitance range
Sod
2.6 102 2.8-100-30 30 323 ∆c > 40, every diode is guaranteed for a BB 147 0,50 0,45 0,40
repeatability within < 2 %
varicap diode with a wide capacitance BB 164 0,45 0,40 0,36
Sod
3 80 1.4-100-30 30
323 range ∆c > 25 , they are suitable for very
wide band oscillators, for HF and VHF BB 640 0,45 0,40 0,36
1.8 18 0.7-470-9 30 melf VHF-UHF similar to BBY31 but with higher Q BB 215 0,45 0,40 0,36
Sot high Q from 1 to 100MHz
25 600 200-1-500 12 23
it is the SMD version of BB509 and BB112 BB 510 1,00 0,95 0,90

2 22
at 470MHz
30
123
for VHF - UHF , very good Q
BB 515 = 721 0,45 0,40 0,36
0,5 Ω 9 pF 323 BB 535 = 721S 0,45 0,40 0,35
Sod MW-HF-VHF very wide capacitance range
3.2 85 1.3-100-30 30
123 ∆c > 20 BB 620 0,50 0,45 0,40
2,7 50 0.8-470-25 30 Melf HF - VHF - UHF, replaceable with BB 629
Sod BB729S but with different case see BB729S
2.6 45 0.6-100-12 30
123 BB 639
Sod HF - VHF - UHF , the same as BB639 with BB 729S
2,7 48 0.8-470-25 35
323 Sod123 case 0,50 0,45 0,40
= BB729
1 10 1 - 470 - 9 32 123 BB 701 = 601 see BB 833
VHF - UHF , for VCOs up to 3 GHz
1 12 1 - 100 - 9 30 123 BB 811 = 831 or BB 835
Sot common cathode double
20 70 0.2-100-38 18 23
varicap diode, high Q, HF VHF BB 804 0,70 0,65 0,60
0.7 12 1.8 - 470 - 9 30 323 fro VCOs up to 3,5 GHz interesting BB 833 0,45 0,40 0,36
with very low minimum article on
2.4 - 470 Sod
0.6 11 30 323 capacitance, high ∆c ratio for VHF BB 835 0,80 0,80 0,80
9 pF
VCOs up to 4GHz Communic.
miniature case with very low 4-98 and on
1.5 - 470 SDC series inductance < 0.6 nH Microwave
0.55 11
2.5 pF
30 80 BB 857 0,50 0,45 0,40
suitable for VCOs even over Journal
4 GHz 6-99
for VHF - UHF ,
single diode BBY 31 0,45 0,40 0,36
it is available
a 470MHz Sot
1.8 18 30 23 common also in single
1 Ω a 9 pF
cathode double melf case melf BBY 39 0,50 0,45 0,40
diode as BB 215
0,45 0,35 0,30
0.5 - 200 Sot VHF high Q, it is the SMD version of
4.3 43 28 BBY 40 30 - 99 pcs 0,25
25 pF 23 BB 809 and BB 909 with glass case
100-299 pcs0,20
2.7 43 0.7-100-30 30 23 VHF - UHF wide capacitance range BBY 42 0,50 0,45 0,40
common
Sot
cathode double for low voltage BBY 51 0,50 0,45 0,40
0.37 23
2.6 7.5 7 diode VCO max 6-7V
1 GHz - 5
Sod up to 3 GHz
single diode BBY 51-03W 0,45 0,40 0,35
323
for low voltage VCOs max 6 - 7 V up to
0.9 Sod
1 2 7 3GHz , it is the single diode version of BBY 52-03W 0,50 0,45 0,40
1 GHz - 1.8 323
BBY 52

continue

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 continue VARICAP DIODES -- SMD pag A 12
cap. ( pF) Q-MHz-pF price € each
for the explanation of the used terms ( cap
or Vr case
pF - Q - Rs - Vr - ∆c ) see previous pages cod. 1+ 4+ 10+
min max
RS-MHz-pF pcs pcs pcs
very low series inductance miniature case
1.9 8.5 0.47-470-5 15 min and very high Q, suitable also for low HVC 369 B 1 - 3 pcs0,45
Hitachi
voltage VCOs 4 - 9 pcs0,40
high Q , common cathode double 10 - 29 pcs 0,35
0.43 Ω diode for HF - VHF, its great
Sot KV 1470 30 - 99 pcs 0,25
10 90 100 MHz 18 feature is a wide capacitance
23 Toko 100-299 pcs 0,20
range even with only 1 to 5V,
55 pF
suitable for low voltage VCOs
Hyperabrupt with high performances:
250 - 50 Sot MA 4ST 124
2.5 30
12 pF
22 23 wide capacitance range ∆c >7, 0,55 0,50 0,45
3 - 8V linear tuning, good thermal stability ( MA4ST 402 )
250 - 50 - Sot Hyperabrupt, wide capacitance range
1.8 20
10 pF
22 23 MA4ST 401 0,55 0,50 0,45
∆c >8
high Q guaranteed on all the capacitance
14 50 300-50-27 30 23 MMBV 2108 0,50 0,45 0,40
range 1 - 30 V
see pictures Sod SMD miniature case, UHF-microwave, SMV 1104-33
0.9 4 1200-50-1.7 15
323 1,40 1,30 1,20
oin the high Q SMV1233-011
previous Sod SMV 1104-34
page 2 10 1000-50-2 15 323 miniature SMD case, VHF-UHF, high Q 1,40 1,30 1,20
SMV1234-011
Sot HF-VHF wide capacitance range within SMV 1204-12
7 80 150-50-10 12 23 10V 1,70 1,70 1,70
SMV1212-001
Hyperabrupt HF - VHF wide
Sot SMV1213-004 0,90 0,80 0,70
23 capacitance range, common
2 28 200 - 50 - 4 12
cathode double diode SMV1204-113
Sod
2.2 18 0.5-470-14 28
323 very high Q , for VHF - UHF 1T 362 0,70 0,70 0,70

varicap diodes REPLACEMENTS

BA 121 with BA 142 or BB 100 -- BB 105 and 205 with BB 405 -- BB 109 with BB 106 --
BB 134 SOD 323 case with BBY 31 SOT 23 case -- BB 153 with BB 729S -- BB 139 with BB 909
BB 179 SOD 523 case with BB 515 SOD 123 case or BB 535 SOD 323 case
BB 503 with BBY 31
BB 512 SMD case with SVC 321 TO92 case -- BB 521 = BB 221 -- BB 529 with BB 909 or BB 910
BB 535 SOD 323 case with BB 515 SOD123 case -- BB 545 - 555 - 565 very similar to BB 535 --
BB 601 and 701 with BB 833 or 835 -- BB 609 with BB 329 or 909
BB 629 with BB 729 ( BB 629 has a Mini Melf case , BB 729 has SOD323 case )
BB 639 with BB 619 or with BB 729 -- BB 644 with BB 729
BB 731 with BB 164 -- BB 731 and BB 741 with BB 164 or BB 640
CKV 2020-03-099 and 2020-18-099 new Alpha - Sky codes of DKV 6510-A and DKV 6520-12
MV 2109 and 2209 with SMV 709
SMV 1233-011 , 1234-011 , 1212-001 new Alpha - Sky codes of SMV1104-33 , 1104-34 , 1204

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continue VARICAP DIODES -- special case for microwaves pag A 13
cap. ( pF ) Vr price € each
min max V
case microwave varactor cod. 1 - 10 pcs
4 12 30 Rs=0.9 Ω @ 2.4 GHz , for UHF and microwave BXY 23 4,50
ceram
0.7 2.4 30 at 4V 1.4pF , for UHF and microwave MA 45988 5,00
0.2 0.9 30 high Q = 4000 , Hyperabrupt GaAs varactor for DVH 3653 on request
ceram microwave direct oscillators up to X band
0.3 1.2 22 ϒ constant = 1.25 (MaCom price list about 9 € ) MA 46470 4,30 - 4,00
MaCom 1088 microwave ceramic SMD case,
Ga-As hyperabrupt ultra high Q > 4500 @ 50 MHz
0.3 1.3 20 ceram MA 46H 070 7,20 - 6,40
ϒ constant = 0.75
suitable for VCOs and microwave oscillators
Microwave Abrupt tuning varactor , ceramic case DVH 4742 4,60
for cavity C0V = 1.2 pF -- C0/C20 = 3 -- Vr = 27V BBY 33 4,50
C1V = 4 pF -- C4V = 2.2 pF -- C0/C30 > 4.1 -- high Q > 4000
tuning and spare part for MaCom MA 87728 gunn-plexer cavity DVH6731-90 4,40
microwave C4V = 0.9pF -- C0/C20 = 3.6 -- Vr = 25 V MA 45066 4,90
gunnplexer C0V = 7 pF -- C4V = 2.6 pF -- C10V = 1.5 pF -- C20V = 0.8 pF MA4ST 557 4,40

Ga-As tuning varactor for millimeter frequencies BEAM LEAD

MA46H014 - MA46H042 MA46580 - CVG7965 on request
varactor

High performance Very High Q Silicon Abrupt Junction Tuning Varactor

Silicon abrupt junction tuning varactors has been designed to obtain the highest Q possible , they may also be used for
tuning filters , phase shifters , oscillators , up-converter and low order multipliers. This tuning varactor is a selection of
MA45234 MaCom with improved Vb and Q .
Q > 3500 @ 50 MHz -- > 150 @ 4 GHz
Rs typ. 0,25 Ω @ 50 MHz Vr = 4V
Ratio Ct0/CtVB > 3.9 -- typ. 5
Freq tuning ratio > 2 :1 cod.
Capacitance range typ : 7.5-7.7pF @ 0V -- 3.3-3.5pF -- 1.5pF @ 30V
temp. coefficient typ. 100 - 1000 ppm/ °C MA 45234
Vb > 30V -- typ 45V
Ir < 20nA @ Vr 25V
Vr > 35V @ Ir = 20µA
Each diode comes with the test report

High Cut-off Ga-As Parametric Amplifier Varactor Diode

Gallium Arsenide parametric amplifier varactor diodes offer to the user the highest cut-off frequencies available , to
obtain the high cut-off frequency and a non-linear capacitance , a P+ material is diffused into a very thin layer of N type
material , with a flag doping profile on an N+ substrate , cutoff frequency is measured as a function using Deloach
method .
Alpha case 082-001, Fc @ 0V > 400 GHz -- Fc @ -6V > 900 GHz cod.
VR ≥ 30V -- Cj @ 0V 0.30-0.33 pF -- ΔC @ -6V/0V > 0.5
if used as x4 multiplier with Pin +26dBm @ 11 GHz DVE 6822
→ Pout +22dBm @ 44 GHz DVE 6722B
Thomson case BH10 , FC @ 0V > 500 GHz -- VR > 15V cod.
IR @ -3V < 0,1 µA -- CJ @ 0V 0.2-0.3 pF -- CJ @ -6V 0,13pF
ΔC @ -6V/0V > 0.5 AH110-05

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 PIN DIODES - switches - attenuators - limiters pag A 14
An “ideal” pin diode acts as a current controlled variable resistor, the attenuation is independent from power and
frequency of use. The performances of a "real" pin diode are limited both by the power level and the frequency, due to
a more evident rectification effect at low frequencies. The effect of rectification is simply the normal behavior of a
tradictional diode in presence of alternate current (RF), but in pin diodes it is a defect that prevents its use at low
frequencies.
The choice of a pin diode for low frequencies (short to medium wave <15 MHz) can be very difficult especially when it
has to be used on HF receivers front-ends with good dynamic, in fact the diode itself is the cause of unwanted mixing, in
this case is wasted the precious and expensive "high dynamic" for the use of a wrong or with poor performances diode,
another typical example is in AGC circuits for IF at 70 MHz with TV or digital signals or in intrumentation attenuators and
also for AM signals.
Pin diodes suitable for low distortion and usable below 15 MHz are specified with very long lifetime (Շ > 1μS) so we can
say empirically those for low distortion RF attenuators and switches where the rectification effect at low frequencies are
more limited.
See Ham Radio back issues, QST 12-94, Ulrich Rohde’s various articles and application notes reported on old catalogs
of the manufacturers of PIN diodes such as HP, Ma-Com, Alpha, Unitrode to know more about this topic. Below is
reported a table in a more practical-empirical than scientific way that helps in choosing the pin diodes.
PIN DIODES - switches - attenuators - limiters
application frequency Շ or Cj (Շ = lifetime )
Attenuator + AGC high lifetime
HF Linear variation of the RS vs. bias
low distortion Շ > 1000 nS
( typical 3Ω - 10kΩ )
low intermodulation VHF - UHF Շ med. lifetime
Limiter HF CJ < 4 pF
fast switch VHF CJ < 2 pF very short lifetime < 10nS
shunt configuration UHF + µW very low CJ
high lifetime
medium power HF
Շ > 1000 nS medium-low RS, small dissipable power
switch
VHF-UHF Շ med. lifetime
very low RS, medium-high dissipable power > 1 W ,
with glass pin diodes it is easier to obtain good dissipable
high power switch as above as above
power just keeping leads a little longer
( they act like a heat sink )
phase shifter
and modulators
they have to be used as low distortion attenuators
band they are among the most common low cost diodes used for commercial devices for band
switching switch or antenna switch. If they are used at low frequencies see the above description.
Cases with suffix 03W or 02W are better for high frequency ( > 2,5 GHz ) applications

PIN diodes selection guide

RF band low distortion fast switch
AGC Limiter power switch
attenuator switching switch < 15 nS
BA389 + 479 + 282 2-3 W
G 5082.3080
BA243 5082- 5082-3039 + 3080
5082.3080 MA 47111 3-5 W
L BA244 + 3188 - MI301
MA 47111 BA 423 5082.3043 5082-
A BA282 3039
BA 389 BA 479 basso costo 5082.3188 3080
S BA482 3043 UM 7006 50 W
MA4P4006 uso gener.
S 5082-3188 3080 UM 9401 100 W
BA 389
UM 9415 1 kW
BA 679 - 885 BAR 14-1
BAR 14-1 e BAR 16-1 BAR 16-1 HSMP
> 10 MHz BA 182 BAR 60 382… HSMP- MMBV 3401 3W
S
BAR 60 - 61 - 64…. BA 582 BAR 61 BAP 50-03 3800 BAR 63 e 64 3W
M HSMP BA 679 - BA 885 2W
HSMP 380…. 381…. BA 592 BAR 64… MA 4P 153 BAR 61
D 382…
HSMP 3080 - 3081 BA 792 BA 595 + 885 ( 2 nS ) SMP-
HSMP 388…. BAP50-03 HSMP 3880 BAR 63.... 1304
SMP 1304 HSMP 3881 1SV 271
1SV 271 SMP 1304

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 PIN DIODES - glass or plastic case pag A 15

Շ W = diode dissipable power, the forward price € each

diss
Cj Vb life- Trr
pow
Rs power is greater
time typical Cj with VR > 3V cod. 1+ 4+ 10+
pcs pcs pcs
pF V nS nS W Ω
Rs = series resistance
very high speed schottky diode Trr <100
HSCH 1001
2.2 60 pS suitable as protection on RX input or 0,70 0,65 0,60
limiter, very robust Vb = 60 V 1N 6263
0.8 35 0.7 Sod23 plastic case VHF-UHF up to 3 W BA 182 0,70 0,60 0,50
1.5 20 0.7 VHF - UHF general purpose BA 243 0,35 0,30 0,25
1.2 30 VHF - UHF general purpose BA 243 A 0,40
1.5 20 0.4 10 - 1000 MHz general purpose BA 244 0,25 0,23 0,20
VHF general purpose similar to BA182 up
1.2 35 BA 282 0,35 0,30 0,25
to 3 W

used both as viarable resistor for

≈ BA 389
0.35 30 3 attenuators and for switching up to 0,60 0,55 0,50
1500 ( = BA 379 )
2 - 3W (each diode) staring from low
frequency >2 MHz up to 2 GHz, BA 389
≈ and 479 are similar
0.5 30 3 BA 479 see BA389
1500 (see article on Dubus 1-98)
Available also in SMD case BA679 - 885
VHF-UHF general purpose similar to
1.2 35 BA 482 0,35 0,32 0,30
BA483-484
Rs 1 Ω @ 100mA , layer I = 350 µm very
low distortion, suitable for low MA 47111
0.8 200 4000 1 1 7,30
frequencies either as attenuator and as MA4PH 135
small-medium power switch
very used in RTX portable systems for
2 80 1/3 1 MI 301 3,50
VHF and UHF up to 5W
2 30 0.2 0.7 MC 302 3,50
layer I = 150µm low distortion suitable
either as attenuator and medium power
0.9 600 2500 5.5 1 UM 7006 7,50
switch for HF - VHF - UHF max 1.5 GHz ,
max 50W ( US list price 30$ )
for high power, 100W @ 50°C @ 100 mA
1.1 50 2000 5.5 0.7 it is the typical antenna switch on HF - UM 9401 6,50 6,30 6,10
VHF - UHF systems
0.6 Ω for MW - HF - VHF - UHF for high
4 50 5000 10 at 50 mA power 1 kW @ 50°C @ 1 A UM 9415 9,20 9,00 8,80
0.1Ω a 1 A very high lifetime ≥ 5.000 nS
3 - 5 W 3GHz max , high speed and 5082-3039
0.3 150 100 100 ,1/4 1.2 4,40 4,15 3,90
performances switch ( list HP 8 $ ) ( = 1N 5719 )
0.3 50 15 10 ,1/4 1.5 3 - 5 W , 3GHz max , ultra-fast 5082-3043 1,50 1,40 1,30
0.4 100 1300 ,1/4 2.5 low distortion and low intermodulation
SMD versions are cheaper MW HF VHF for RX high dynamic, 5082-3080
3,40
see HSMP 38… see various articles on QST, etc... ( = 1N 5767 )
or BAR 64…. lifetime = 1.3μS ⇒ min. freq. = 1.5 MHz
see 5082-3080 or SMD HSMP381...
5082-3081 ---
BAR64...
1 35 70 12 ,1/4 0.6 VHF - UHF band switching , 3 - 5 W 5082-3188 1,40 1,30 1,20

continue

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 continue , SMD PIN DIODES pag A 16
Շ diss
W = diode dissipable power, the price € each
Cj Vb Trr Rs forward power is greater
life-
time
pow
typical Cj with VR > 3V cod. 1+ 4+ 10+
pcs pcs pcs
pF V nS nS W Ω Rs = series resistance
ideal for attenuators up to 3GHz low
residual capacitance with linear
resistance voltage controlled from 3Ω to 1SV 271
0.25 50 3 2kΩ , switch up to 2 W , it is also used in 0,90 0,85 0,80
some HF transceivers as switch in front- ( = BA 595 )
end filters, eg. IC90 switch 5W RF or
FT1000 for switch of front-end filters
0.9 35 0.5
same diode, up to 3 W, SOD123 BA 582 0,25 0,20 0,16
for frequencies over 30 MHz SOD323 BA 592 0,25 0,20 0,16
0.3 50 1550 low distortion starting from 1 MHz they BA 595
can be replaced with others with similar see suggested
0.3 50 1550 lifetime as BAR64… HSMP 3800-381…- BA 596
replacements
388… BA 885, or others with glass case
0.5 50 2000
(BAR 64-03W has the same case) BA 597
SMD version of the famous BA479 -
0.5 30 3 BA389 glass case, switch max 2 W, BA 679 0,50 0,45 0,40
10-1500 MHz, melf case
general purpose > 30MHz VHF - UHF
0.9 35 0.7
SOD110 case
BA 792 0,25 0,20 0,16
very good as variable resistance for
attenuators 1 - 2000 MHz and as switch
0.3 50 1600 3
up to 2 - 3 W , very similar to old glass
BA 885 0,55 0,50 0,45
diodes BA 389 - BA 479
common cathode double diode with
see suggested
0.25 100 1000 1/4 4 SOT23 case see SMP 1304-004 or BAR 15 - 1 replacements
BAR 64-05 or HSMP 3814
0.25 100 1000 1/4 4
low distortion switch 2 diodes in series BAR 14 - 1 0,75 0,65 0,60
and attenuator 2 com. anode diodes BAR 16 - 1 0,65 0,55 0,50
0.35 50 1000 3 SOD323 case BAP 50 - 03 0,70 0,65 0,60
low series incutance
BAR 63-
< 0.6 nH SCD80 0,60 0,50 0,45
fast switch for ultraminiature case
02W
frequency >30 MHz
single diode BAR 63-
up to 3 GHz , low 0,50 0,40 0,30
SOD323 case 03W
series inductance
0.3 50 75 1 2 common SOT23 BAR 63-05 0,60 0,50 0,45
and parasitic
cathode BAR 63-
capacitance SOT323 0,70 0,60 0,55
diodes 05W
especially 02W
type, up to 3W 2 common
anode SOT23 BAR 63-06 0,60 0,50 0,45
diodes
low distortion SOT23 single diode BAR 64 0,60 0,50 0,45
>1MHz switch and SOD323 single BAR 64-
attenuator, high 0,60 0,50 0,45
diode 03W
IP3, suitable for SOT23 2 common
0.3 200 1550 1/4 0.9 BAR 64-05 0,50 0,40 0,30
RTX replacements cathode diodes
in HF transceiver in
order to improve the SOT143 2 diodes BAR 64-07 1,10 1,00 0,90
dynamic range not connected
module with 3 PIN diodes for T
0.25 100 1000 1/4 4 variable attenuators up to 45dB, BAR 60 2,00 2,00 1,80
shaped
for instrumentation, IF fast CAG,
Greek P
0.25 100 1000 1/4 4 etc... up to 2GHz BAR 61 1,40 1,15 0,95
see VHF Comm. 1-2001 pag 43 shaped

continue

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 continue , SMD PIN DIODES pag A 17
Շ W = diode dissipable power, the price € each
diss
Cj Vb life- Trr Rs forward power is greater
time
pow
typical Cj with VR > 3V cod. 1+ 4+ 10+
pcs pcs pcs
pF V nS nS W Ω Rs = series resistance
very good for shunt configuration, very
low loss and series inductance, tested
1.2 35 100 0.5 BAR 80 1,20 1,05 0,95
up to 2GHz with IF 10 mA @ 50Ω: shunt
insulation 23 dB, loss 0,15 dB
switch and attenuator >10MHz
0.8 35 100 0.4 BAT 18 0,40 0,30 0,25
up to 2 GHz
0.4 100 1800 500 1/4 2
low distortion
single diode HSMP 3800 0,90 0,80 0,70
0.4 100 1800 500 1/4 2 attenuator and low 2 series diodes HSMP 3802 1,40 1,30 1,20
0.4 100 1800 500 1/4 2 intermodulation 2 com cathode diodes HSMP 3804 1,00 0,90 0,80
MW - HF - VHF -
0.4 100 1500 300 1/4 3 single diode HSMP 3810 1,40 1,40 1,30
UHF, they are the
0.4 100 1500 300 1/4 3 SMD version of 2 series diodes HSMP 3812 0,90 0,80 0,70
0.4 100 1500 300 1/4 3 glass types 5082- 2 com anode diodes HSMP 3813 0,90 0,80 0,70
3080-3081
0,4 100 1500 300 1/4 3 2 com cathode diodes HSMP 3814 1,00 0,95 0,90
VHF-UHF, very good as multiplier up to
0.8 35 70 7 1/4 0.6 HSMP 3820 0,80 0,70 0,65
6GHz
2 PIN diodes in series, VHF-UHF, similar
0.8 35 70 7 1/4 0.6 to glass 5082-3188, very good also as HSMP 3822 0,90 0,85 0,80
multiplier up to 6GHz
0.8 35 70 7 1/4 0.6 2 common anode diodes, as above HSMP 3823 1,80
triple pin diode in a single case
0.2 50 1.5 suitable as low distortion HSMP 386L 0,50 0,40 0,30
switch and RF attenuator
very low distortion even at low
0.4 100 2500 550 1/4 0.6 HSMP 3881 2,00
frequencies
0.3 100 200 1/4 0.6 2 pin diodes in series HSMP 3892 0,90 0,85 0,80
0.3 100 200 1/4 0.6 2 common cathode pin diodes HSMP 3894 0,60 0,50 0,40
switch and limiter up to 3 GHz, 1nH low
0.3 35 200 1/4 2.5 HSMP 4890 1,00
series inductance
VHF UHF general purpose switch and
1 35 1/4 0.3 MMBV3401LT 0,80 0,70 0,60
attenuator
2 common
100µm layer I, low distortion SMP 1304-
0.3 200 1000 1/4 2 cathode 0,90 0,85 0,80
switch and attenuator 004
diodes
2 pins common cathode diodes, similar
0.3 50 200 SMP 1310-94 0,70 0,60 0,55
to HSMP 3894
2 pins common cathode diodes, similar
0.3 50 200 SMP 1310-13 2,50
to HSMP 3894

PIN diodes REPLACEMENTS

BA682 MELF version of BA282 replaceable with BA792
BA979 + BA779 MELF and SMD versions of BA479
BA 892 SCD80 case with BA 592 SOD323 case or BA 582 SOD123 case
BA886 and BA586 with HSMP 3800 but with different case
BAP63… and BAP64... with BAR63… and BAR64…
BAR15-1 with HSMP 3814 or SMP 1304-004 or BAR64-05
BAR17 with HSMP3800
BAR 63 SOT23 case = BAR 63-03W SOD323 case
BAT 18-04 with HSMP 3822 --- BAT 18-06 with HSMP 3823 --- DAN235U with BAR 63-05W
MPN 3401 glass case, the same as MMBV3401 SMD case
MPN 3404 replaceable with cheaper BA.... versions

continue

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 continue , PIN DIODES pag A 18

specials , microwave PIN diodes - various - limiters

price
picture cod. € each
1 - 10 pcs
Alpha , microwave ceramic case Cj 0.1pF - Vbr 80V Lifetime
CSB 7002-02 6,80
80nS , Trr 5 nS
DH 50056 70Vbr - Cj 0.2 - 0.4 pF - Rs 1 Ω - Trr 8 nS
Lifetime 80 nS , microwave ceramic case 1.3 x 1.5 mm with p.c.b. DH 532 9,20
pins
30 W max power - 200 W pk HI - REL versions MA 47222
on request
100 MHz - 12 GHz band hermetic case 5082-3170
at 10 GHz : loss < 0.5 dB , insulation > 20 dB 5082-3340 9,80
variable attenuator up to about 40 dB ( depending
on frequency ) it is made of 3 pin diodes Greek P or BAR 60
T shaped in a single case, up to 2 GHz suitable for see price
BAR 61 of SMD
CAG circuits, for instrumentation, as modulator,
phase shifter etc..., suitable also in HF - VHF and PIN diodes
replaceable BAR 60
UHF receiver front-end due to its lifetime of 1 μsec.
with SMD TDA 1053 BAR 61
low intermodulation and distortion, interesting low
BAR 60 or TDA 1061
price. see VHF Communications 1-2002
BAR 61
ceramic chip ∅ 1.3mm low capacitance for μwave and μstrip Cj
MA4P 153-120 5,50
0.1 pF Vb 30 V , lifetime 10 nS , Trr 2 nS , res. 1.2 Ω
special offer
2-12GHz ceramic case, no specifications available PIN limitatore 1.00
special offer
screw mount, up to 500 MHz , no specifications available PIN di potenza 1,00
Reverse Conducting old germanium diode, it was used as
protection switch up to X band for radar, for waveguide mounting L 4147 on request
in old radars

Mini - Circuit LIMITER circuit

Limiter stage 0,1 - 150 MHz, typical output level < -1,6 dBm with PLS - 1 on request
input from +6 to +20 dBm , relative phase variation within 1°

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 Multiplier diodes -- Varactor and Step - Recovery pag A 19
-- STEP-RECOVERY or SNAP-OFF for low power applications or high multiplication > 4 or broadband comb generation,
for very fast pulse. The choice of the diode can be empirically determined by the following rules: lifetime > input
frequency period. (τ > 1/F in), transition time < output frequency period (trr <1/F out), with step-recovery diodes it is
possible to obtain very high multiplication factors and output frequencies up to 26 GHz and beyond.
-- VARACTOR generally used for medium and high power multiplication, x2, x3, x4 with high efficiency output
typical 60% x2, to 35% x4, they are available in a range from 400 MHz to 18 GHz of output frequency.
In addition to these diodes, born just as multipliers, there are also diodes for other uses with lower performances than
step-recovery but at very low cost, eg. for multiplication within 2 to 5 GHz it can be used a varicap and pin or RF
schottky matched pairs as frequency doublers and even ultra-fast switching diodes but with Cj <1pF and trr <1ns, all for
low-power applications. For millimeter multipliers >30 GHz are used beam-lead Schottky diodes.
(See articles on VHF Comm 3-1978 and much more interesting on VHF Comm 3-2006)
lifetime Trr - Tt Cj pF Vb price € each
case
τ nS pS tip -6V V STEP-RECOVERY or SNAP-OFF diodes cod. 1 - 10 pcs
6 60 0.2-0.3 15 also for medium power up to 200 mW output DH 267 on request
up to 20GHz and up to 30GHz with reduced DVB 6723
ceram performances, ceramic chip Ф 1.4 x 1.2 , up to 0.5W
chip
> 10 < 70 0.2-0.5 15 = BXY 18-AB6 14,80
input , high efficiency with 10GHz output, example :
input 1.1GHz + 25 dBm x 9 = out 10 GHz + 15 dBm = HP 5082-0885
optimal output range 2 - 8 GHz , ceramic chip case
35 200 0.9-2 40 DH 252-44 11,50
ceram with strip
50 <170 1.5 35 change level 1.000pC HP 5082-0112 12,50 - 11,00
glass 100 225 4 50 replaceable with 5082-0112 HP 5082-0180 ---
ceram
> 10 <100 < 0.6 25 = 1N4547 HP 5082-0253 18,00

cer chip > 10 < 75 0.1-0.5 15 Fc 350 GHz , high efficency with 10 GHz output HP 5082-0885 on request
21 150 1.2 40 also for medium power GC20151 - 2544 - 8A 1075 12,70
ceram 60 100 1.2 40 Ft 300GHz 8A 1074 12,70
available both in chip case or with screw dissipation
10 < 100 0.6 25 8D 2011 17,60
ceram support
COMB GENERATOR used for instrumentation, military receivers, frequency
meters etc... to generate an RF comb up to 18 GHz with input at only 500 MHz ± 10
HP 33004 A on request
MHz , example of wide band spectrum with input at 500 MHz from 0.5 W :
up to 4 GHz output +10dBm , 4-8GHz +5dBm , 8-12GHz -5dBm , 12-18GHz -15dBm

lifetime Trr - Tt Cj pF Vb price € each

case
τ nS pS tip -6V V VARACTOR or BIMODE diodes cod. 1 - 10 pcs
9 - 18 95 max P in 15W 0.1 - 3 GHz BXY 19 F - FB 19,40
ceram 20-30 100 max P in 20W 0.1 - 2.5 GHz BXY 19 GB 25,00
1.5-2.5 30 max P in 2W 1 - 8 GHz BXY 21 CA 10,80
ceram 2 D 4852 9,50
> 30 < 100 1 power diode, thermal resistance 8°C/W DH 245 16,80
ceram
10 75 0.2-0.5 30 max P in 1W 8-16GHz finishingDH 292 17,00
ceram
2000 5 power diode M6B18B-8A1076 13,00
1000 VAB811
ceram 100 8 - 10 80 max P in 20W max 3 GHz, thermal resistance 12°C/W 14,00
MA43811
50 < 150 1.6 medium power diode 8B 1009 - DH160 - VAB 824A 16,00
ceram 90 < 700 2 80 Ft > 150 GHz , max Pin 6W , at 6GHz typical out 2.5W VAB 804 EC 15,00

other low cost devices suitable as multiplier cod. price € each

PIN diode used as comb-generator, see VHF Comm. 1 - 99 BA 482
see pin and
varicap diode, very good VHF – UHF multiplier, see RR 9-2003 BB 405
varicap
SMD PIN diode usable as low level multiplier up to 6GHz , a HP application note is HSMP 3820 diodes
available on request with the diodes ( 2 single diodes 3820 or 3822 double) o 3822
ultra fast switching in glass case, Cj < 1pF -- Trr < 750pS -- Vb > 20V up to 2 - 3GHz 1N 4376 1,20
glass and SMD matched pairs , suitable as x2 multipliers see schottky
BB 405B - BBY 36 glass case, as multipliers to to 1.5 - 1.8 GHz see varicap
glass diode for medium power multipling, max 4 W input, up to 1.5 - 1.8 GHz PC 139 - 1N5142
DMB 2856 doubler up to 60 GHz , efficiency ≈ 7% at 50 GHz , beam lead , see beam lead schottky diodes

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 Old germanium and silicon diodes pag A 20
coaxial price €
description cod.
cartridge 1 - 10 pcs
up to 15 GHz, used as mixer in old μwave instruments - detector D 5.5 x19 1N 76 A 9,80
1N78 is a selection of 1N76 for usage up to 18 GHz 1N 78 not available
Alpha I. D 4170 11,60
as above but with reverse polarity ( red ) finishing MA 41436R 12,70
better version of 1N23 up to 15 GHz , D 8.5 x 19 SIM 2 4,00
medium-high voltage HF IF detector VR 90V I 30 mA VF 0,4V AA 118 0,50 - 0,45
very good RF detector with high detection efficiency ŋ 76%
glass AA119 - 1N541 0,55
VR 30V I max 35 mA VF 0,38V
germanium very good RF IF detector VR 30V I 20 mA VF 0,28V AA 137 0,50 - 0,45
high voltage HF RF gold bonded VR 90V and low threshold VF 0,26V AA 144 0,55 - 0,50
RF Gold Bonded CJ< 1pF at 1 V - VR 30V - VF 0.25V at 1mA - I 110 mA AA Y30 0,45 - 0,40
fast switch and general purpose AA Z10 0,45 - 0,40
Gold-Bonded low barrier VF 0.24V VR 75V Cj<1pF at 1V I 140 mA AA Z15 1,10 - 0,90
detector up to 1GHz and fast switch VR 20V Cj 2pF at 1V I 130 mA AA Z18 1,10 - 0,90
RF IF detector and HF mixer VR 20V I 50 mA VF 0,28V OA 73 0,60 - 0,55
general purpose VR 90V - I 50 mA OA 95 0,30 - 0,26
RF IF detector high efficiency ŋ 76% a 10MHz VR 30V I 35 mA VF 0,38V OA 99 0,70
Gold-Bonded very good RF IF detector VR 25V - Imax 30 mA - CJ < 1,5pF 1N 60 0,55 - 0,50
for old Telonic and Wavetek instruments, detector for linearization of output
1N 82 0,85 - 0,75
signal or mixer, very good detector for high sensitivity probes up to 2GHz
VR 35V - I 50mA - CJ 1 pF 1S 188 0,90
HF IF general purpose detector - VR 50 V - VF 0,5 V - CJ 2,5 pF 1N 3600 0,30 - 0,25
silicon glass case, RF detector and low cost mixerup to 1 GHz , Cj 1.2 pF BA 281 10 pcs = 1,20
for RF up to 500 MHz and suitable for high voltage up to 200 Vbr BAS 21 SMD 10 pcs = 1,20
2 diodes in series with center tap up to 1 GHz , Cj 1 pF , Vb 70 V ,
10 pcs = 0,80
Trr < 6 nS very good generl purpose detector, switch, protection from BAV 99 SMD
50 pcs = 2,80
transients, min. 10 pcs
2 common anode diodes, see BAV 99 for specifications BAW 56 SMD 0,23

Gunn and Tunnel diodes

Varian 5.5V , 500mA every special offer
Gunn 38-40 GHz 100 mW 30 - 47 GHz 30 mW
diode has the test report
VAS 9210 IU
26,00
18 - 26 GHz 8 mW 20 - 24 GHz 20 mW Thomson 4,5 V , 0.5 A AH 370 26,00
18 - 26 GHz 60 mW 20 - 24 GHz 150 mW Thomson 5,5 V , 1 A AH 374 on request
13 GHz 60 mW 12 - 14 GHz 40 mW Siemens TEG 214 26,00
13 GHz 2 mW Siemens TEG 212 14,00
7 GHz 1 mW Siemens TEG 213 14,00
12 GHz -- 17 GHz -- 18 GHz MA49337 MaCom on request
This Tunnel diode is used as spare part in Tektronix (or other brands)
1N 3717 9,30
oscilloscopes triggers, or as self oscillator for VHF microtransmitters
for microwaves, Ip 1.6mA , Vp 75V , Cj < 1.8pF , Rs < 8 ohm , special
AEY 30 D on request
ceramic case

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 NOISE SOURCE diodes pag A 21
All the materials generate noise and the noise is proportional to its temperature starting from 0°K (-273°C).
The noise depends on the chaotic movements of the electrons, the thermal noise is known as white noise (from optical
physics) as it fills the whole spectrum. From an electronics point of view the noise causes big limitations to our devices
for example amplifiers, instruments, radars, receivers, electro-medical, etc… A very simple example is the sensitivity
limitation of receivers caused by the noise. Although the noise causes problems and limitations, it will be explained how
in some cases, if it is artificially generated, it can even improve our electronic devices (see dithering) or help to do some
tests, a calibrated noise source is a very important tool in our labs.
NOISE GENERATORS . The first noise generators used noble gas such as Argon with 15.3dBENR, Neon with
18.5dBENR, Helium with 21dBENR and were born in order to test the first radar systems in the 1940s.
Another method to generate noise is to use hot and cold resistors, mainly used in research labs with very high precision,
this technique due to its complexity is used only in physic laboratories or in calibration centers. Today the most used
noise generators are special diodes, noise diodes. A reverse polarized diode until it reaches the avalanche effect is an
example of noise generator (see Zener diodes). Unlike Zener diodes, the noise diodes are doped and developed to
cover a wider band (low Cj) with an output level really flat and more stable.
OUTPUT LEVEL For noise source applications the output level
cannot be indicated as for other signal generators.
Signal generators, transmitters etc… have the output level indication
in mV, dBm, W etc….
If you have a 100 to 200MHz sweep signal generator we say that the
output level is for example -10dBm, the amplitude of -10dBm is
swept from 100 to 200MHz but it is not simultaneously in the whole
frequency range.
In the case of noise sources the amplitude is simultaneously on the
entire frequency range, this means that the amplitude is defined in
dBm/Hz power spectral density, or in ENR excess noise ratio.
ENR means the ratio in decibel of the output noise between the ON
and OFF state of the diode, in the OFF state the diode has only
-174dBm/Hz which is the output level generated by a resistor at
290°K (about 17 °C).
For example, if we have a power spectral density of -142dBm/Hz it
means that (174 - 142 = 32) so the ENR is 32 dB.
If the bandwidth is 10Hz the noise power is -132dBm/10Hz if the
bandwidth is 10KHz the noise power is -102dBm/10KHz. 3 values of IF bandwidth (BW), as it narrows the
bandwidth the noise level down by law
10log BW, examples:
See the example on the right, in a spectrum analyzer the noise level half BW corresponds to -3dB,
changes depending on the used IF bandwidth. four times BW corresponds to +6 dB
one tenth BW corresponds to -10dB, etc..

Some applications for noise source diodes

DITHERING AUDIO AND ULTRASONIC TEST
In an A/D converter for example digital receivers, the noise
to find problems of mechanical vibration and reverberation in
injected improves the quantization error, the sensitivity will be
automotive field, buildings, etc... or for soundproofing tests
improved (this method is also used in audio and video).
NOISE FIGURE MEASURES SPECTRUM ANALYZER CALIBRATION
With a calibrated noise source devices it is very easy to verify the
Test intruments for noise figure measurement in low noise amplitude calibration of a spectrum analyzer, the real advantage
amplifiers, converters, receivers, mixers and front-ends. is the RF generation simultaneously on all the band.
TESTS ON RECEIVERS NPR DISTORTION MEASURES
The noise is useful to measure the sensitivity in some complex This is a complex intermodulation measurement very often made
receivers like radars, base stations, radiometers etc… A noise on multichannels FDM, MMDS, CATV, cellular base stations,
source can substitute for a more complex RF generator, etc..
moreover it can generate noise in a broad band spectrum Injecting noise and measuring the distortion with special notch
simultaneously. filters is used to obtain the measurement.
FADING SIMULATOR
By modulating an RF signal with noise it is possible to simulate a FILTERS AND ANTENNAS TESTS
signal affected by fading, this is very useful in mobile radio using noise as tracking generator tracking
testing.
RADIO ASTRONOMY ELECTROMAGNETC SUSCEPTIBILITY
GAIN / BANDWIDTH MEASURES

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 NOISE SOURCE diodes pag A 22
case frequency band output level bias cod. price €
10 Hz - 3.5 GHz 30 - 35 dBENR
SMD sod 323
( max 4 GHz ) -144 / -139 dBm / Hz
8 - 12 V 5 mA NS-301 28,00
BL gold plated 10 Hz - 8 GHz 30 - 35 dBENR
ceramic ( max 10 GHz ) -144 / -139 dBm / Hz
8 - 12 V 8 mA NS-303 42,00

Tests on noise diodes and advices for usage

-- We would point out that the choice of a SMD case (Sod 323 on the model NS 301) was evaluated carefully as the
normal version (glass) didn’t give us good results regarding the band flatness, with a ripple over 2 GHz definitely
not acceptable, while with the special SMD version together with a good mounting you get a better flatness of
the output level (see chart below ΔENR NS301).
-- With the NS 303 to have a output level flatness it has to be used a good dc-block capacitor on the output,
we searched for dc-block 1000pF capacitors particularly suitable for this use and low cost, they are suitable to
work until at least 10GHz with a ripple on attenuation <0.5dB over the entire 10 MHz - 11 GHz band, with this
capacity value the cut off frequency of the dc-block (minimum freq.) is about 5 MHz, see Capacitors sections up to
40 GHz Ultra Wide Band cod. CCB-1N.

POWER SPECTRAL DENSITY

NS-301
measured at 1.5 GHz
Freq. start 10 MHz -- Freq. stop 3 GHz -- Span 300 MHz / div.
2 dB / div -- Ref. center level 15 dBENR Noise power
= -82 dBm
( BW 1 MHz )
NS-301 out level 15 dBENR equal to
including a 16 dB attenuator , best result and worst result over 4 Spectral density
different samples tested in our laboratory = -142 dBm / Hz
( = 32 dBENR )

Diode application as NOISE SOURCE for noise figure measurements

NS = noise souce diode
C1 = for the 4 GHz version it is not critical, from 1 to 10 nF
C1 = for the 8 GHz version ( especially if you want to reach 10 GHz )
it has to be COG and of good quality, see the note above
R1 = 3 x 11 Ω in series , a low R1 value ( 25 - 35 Ω ) little decrease
very simplified sheme of a noise generator, it is the output noise level but makes it flatter.
possible to improve the bias by inserting, for R2 = 3K3Ω for NS 301 - 2K2Ω for NS 303, these values are for +28V
example, a 2931 or 2951 regulator in the bias pulsed power supply as available on most Noise Figure Meters.
network (instead of R2). The attenuator is A higher bias value increase the frequency band.
necessary to reach a low return loss on the A lower bias value makes a flatter noise level .
output port and to bring the noise level to the With a 16 dB attenuator it is obtained an output level of 15dBENR
measurement standards (5 or 15 dBENR) NOTES , values for V = 28 v - case 0805 or 0603

see the following pages regarding 2 articles on noise source diode

with very interesting applications

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 NOISE SOURCE diodes pag A 23

Here follow 8 pages of an article focusing on noise source diodes with kind permission of
VHF Communications editorial office

Franco Rota, I2FHW

Noise source diodes

1. the output level indication in mV, dBm,

Noise W etc…. If you have a 100 to 200MHz
sweep signal generator we say that the
1.1 Introduction output level is, for example -10dBm,
the amplitude of -10dBm is swept from
All materials generate noise and the 100 to 200MHz but it is not
noise is proportional to its temperature simultaneously in the whole frequency
starting from 0°K (-273°C). The noise range.
depends on the chaotic movements of
the electrons, the thermal noise is In the case of noise sources the
known as white noise (from optical amplitude is simultaneously on the
physics) as it fills the whole spectrum. entire frequency range, this means that
the amplitude is defined in dBm/Hz
From an electronics point of view the power spectral density, or in ENR
noise causes big limitations to our excess noise ratio. ENR means the ratio
devices for example amplifiers, in decibel of the output noise between
instruments, radars, receivers, electro- the ON and OFF state of the diode, in
medical, etc… A very simple example the OFF state the diode has only -
is the sensitivity limitation of receivers 174dBm/Hz which is the output level
caused by the noise. generated by a resistor at 290°K.
Although I have said that noise causes For example, if you have a power
problems and limitations, I want to spectral density of -142dBm/Hz it
explain how in some cases, if it is means that (174 - 142 = 32) the ENR is
artificially generated, it can even 32 dB. If the bandwidth is 10Hz the
improve our electronic devices (see noise power is -132dBm/10Hz if the
dithering in Table 1) or help to do some bandwidth is 10KHz the noise power is
tests, a calibrated noise source is a very -102dBm/10KHz.
important tool in our labs.

1.2 Output level 2.

Noise generator diode
For noise source applications the
output level cannot be indicated as for 2.1 Diode selection
other signal generators. Signal
The first noise generators (in the
generators, transmitters etc… have
1940’s) used noble gas such as Argon
with 15.3dBENR,

11

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 Diodi NOISE SOURCE pag A 24

Table 1: Some applications regarding the generation of noise, it can improve

electronic devices or help to do some tests on them.
● Dithering ● Test On Receiver
In an A/D converter for example digital The noise is useful to measure the
receivers, the noise injected improves sensitivity in some complex receivers like
the quantisation error, the sensitivity radars, base stations, radiometers etc…
will be improved (this method is also A noise source can substitute for a more
used in audio and video). complex RF generator, moreover it can
generate noise in a broad band spectrum
● Spectrum Analyser Calibration
simultaneously.
With a calibrated noise source devices it
is very easy to verify the amplitude ● NPR Distortion
calibration of a spectrum analyser, the This is a complex intermodulation
real advantage is the RF generation measurement very often made on
simultaneously on all the band multichannels FDM, MMDS, CATV,
cellular base stations, etc..
● Noise Figure Measurement Injecting noise and measuring the
Test instruments for noise figure distortion with special notch filters is used
measurement in low noise amplifiers, to obtain the measurement.
converters, receivers, mixers and front
● Fading Simulator
ends.
By modulating an RF signal with noise it
● Gain-bandwidth measurements is possible to simulate a signal affected by
A flat noise source can be used as a fading, this is very useful in mobile radio
“tracking generator” combined with a testing.
spectrum analyser to ease measurements
● Radio Astronomy
of gain and bandwidth.
● EMI Testing
● Encryption
● Audio And Ultrasonic Test

Neon with 18.5dBENR, Helium with • NS-301 SMD sod323 case, up to

21dBENR and were born in order to 3.5GHz
test the first radar systems. • NS-303 ceramic gold plated case,
Another system to generate noise is to up to 10GHz
use hot and cold resistors, mainly used Both types are silicon avalanche diodes
in research labs with very high that provide 30-35dBENR with a
precision. broadband spectrum starting from 10Hz.
Zener diodes can be used to generate In this article I will focus on the 3.5GHz
noise but the output level is not type and in a second article I will also
constant, not predictable and used only describe the 10GHz type which is more
for HF frequencies, even some bipolar complicated.
transistors like BFR34 have been used At the beginning I tested the glass case
in the past for amateur applications type but this case was not suitable
using the reverse biased base-emitter because the maximum frequency can be
diode, the output level is definitely not around 1.5 - 2GHz, for the same price we
constant. can have 3.5GHz with a flatter output
For our applications the right selections level.
are:

12

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Diodi NOISE SOURCE pag A 25

Fig 1: The same noise

level related to 3
different bandwidths.

2.2 Schematic diagram

The SMD sod323 case has a very low Fig 3 shows the circuit diagram of a
series inductance typically 1 - 1.5nH NS-301 noise source diode up to 3.5
which is reasonable for a 3GHz GHz.
application. Fig 2 shows the SMD case C1 – dc blocking capacitor
sod323, the body is about 1.9mm long,
it is useful for many applications in the The selection of this capacitor is
lower microwave frequency range. extremely important to flatten the
output level. I spent much time testing
several
Fig 2 : The SMD
SOD323 case.

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 Diodi NOISE SOURCE pag A 26

Fig 3 : Circuit diagram for a noise source up to 3.5GHz using an NS-301 noise diode.
types of capacitors, ATC porcelain the PCB.
capacitors have less insertion loss at R2 - bias resistor
microwave frequencies but they can’t be
used because their Q increase the self For the noise diode NS-301 at about
resonance dip. 5mA, +8/+12 V, the correct value is
3.3KΩ if you use the diode for noise
For this purpose I selected a special figure measurements with a classic
capacitor case, 0805 COG, which can be +28V pulse available from all the noise
used up to 12GHz (about 1.5nF), with figure meters. If the diode is used as a
this capacitor the minimum frequency is general purpose noise generator to test a
about 10MHz. filter, for example with a spectrum
In the next article about the 10GHz analyser, you can connect directly to a
noise source diode I will describe these +8/+12Vdc without the R2 resistor.
capacitors in more details. NS - Noise diode
For 3GHz application the C1 capacitor As described above the NS-301 sod323
isn’t a crucial component, case 0805 or diode is a good selection for the 3GHz
0603 and values form 1nF to 10nF are frequency range, it is important to
good anyway. remember to keep the pins as short as
C2, C3 – bypass capacitors possible! The diode must be mounted
These capacitors are not critical; they very close to the output connector.
can be 1nF and 10nF. P.C. board
R1 - RF load resistors The FR4 fibreglass p.c. board is ok, the
This resistor is the sum of 3 resistors in insertion loss is so little that it isnn’t
series in order to keep the stray capacity worth a teflon laminate, vice versa it is
as low as possible, the total value can be very important the noise diode ground
around 30 to 40Ω connection that has to be as short as
possible (see the above explanation).
The manufacturer of noise diodes says
that the diode impedance is about 20 to I tested several noise source diodes in
40Ω, I noticed that by assigning to R1 a my lab with sod323 case, Fig 4 shows
lower resistance (20Ω), the output noise the best and the worst result, in the
level is flatter, on the contrary with an frequency range 10MHz to 3GHz with
increased resistance (40Ω) the output 2dB/step and 300MHz/step, the centre
noise level is a little higher. reference level is 15dBENR and the
noise source diode is connected with a
If possible, it is better to solder the 16dB pad attenuator.
resistors without using copper track on

14

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 Diodi NOISE SOURCE pag A 27

Fig 4 : The best and

the worst test results
on different noise
source diodes.

15dBENR which is the right noise level

2.3 Output attenuator accepted by a lot on noise figure meters.
The purpose of this attenuator is two The output noise of the NS-301 diode is
fold, the first one is to obtain the about 30-35dBENR this means that
with a 16dB attenuator you can have
about 15dBENR. Any other attenuation
values can be used to get other ENR
values.
The second and most important purpose
of this attenuator is to match the output
impedance to 50Ω. In noise source
devices used for noise figure
measurement, one of the most important
condition is to match the output
impedance as near as possible the 50Ω
resistive load, the easiest way is to
insert an attenuator to the output
connector.
Normally the ultra low noise GaAsFet
preamplifiers have a very bad input
return loss, typically a VSWR from 20
to 2 (return loss from 1 to 9.5dB), so if
we test this kind of preamplifier with a
noise source with an high return loss the
total error is unacceptable.
Fig 5 shows a simple explanation of the
mismatch due to the noise figure
Fig 5 : A simple explanation of the measurement, we can assume that the
mismatch due to the noise figure preamplifier input return loss is 3.5dB,
measurement. SWR = 5 (it can seem too high but it is a
realistic value).

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 Diodi NOISE SOURCE pag A 28

Fig 6 : Instability of
noise source diode
output.

If our noise figure meter measures order to do more accurate noise figure
2dBNF and we assume also that the measurements.
noise source output return loss is 23dB
(SWR 1.15), the true noise figure can be Fig 6 shows the instability that it is quite
between +0.63dB/ - 0.7dB for a 2dB good for amateur applications, for 8
measured value. hours of continuous operation it is only
In conclusion we should keep the SWR 0.07dB of output level but there is also a
of a noise source as low as possible in 0.03dB of testing instrument instability
to consider.
Fig 7 : Response with a
45dB amplifier.

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 Diodi NOISE SOURCE pag A 29

Fig 8 : Picture of the

broadband amplifier.

3. can do a measurement of band pass

filters, return loss etc. The signal
General purpose noise coming from the noise generator diode
generator is very low so we need at least 45dB of
amplification, however 65dB is better.
The real difficulty is to obtain a
As shown in Table 1 a diode noise
reasonable flat amplifier response. For
source can be used successfully in a
this purpose I made an amplifier using
broadband noise generator combined
INA03184 and INA10386 MMICs, the
with a spectrum analyser like a
result is shown in Fig 7 and the total
“tracking generator”. This is not a true
response is given by the noise source
tracking generator because it works in a
diode combined with the 45dB
different way. As I said above the
amplifier.
tracking generator is like a sweep
generator so its frequency moves from Figs 8 and 9 show the 45dB broadband
start to end but it is not simultaneous in amplifier from few MHz to 2.5GHz
all the frequency range. used as noise amplifier in order to test
the 2GHz band pass filter. This circuit
If we combine a broadband noise
is not difficult to build and it can be
generator with a spectrum analyser we
used in any lab as general purpose
broadband amplifier.

Fig 9 : Circuit diagram

of the broadband
amplifier.

17

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 Diodi NOISE SOURCE pag A 30

Fig 10 : Dynamic
range of a 2GHz band
pass filter

Fig 10 shows the dynamic range of a analyser, typically the HP 141 series or
typical 2GHz band pass filter with a any other type, with an option that
noise amplification of 45 dB and 65dB. works like a tracking generator.
The dynamic range improves with more NS301 noise source specifications are:
amplification, but it is more difficult to
achieve a flat output level. Frequency range: 10Hz - 3.5GHz
Output level : 30/35dBENR
Fig 11 shows the equipment setup used (-144/-139dBm/Hz)
for the filter measurement. Bias: +8/+12V, 5mA
It is demonstrated that with a simple It is available from R F Elettronica -
noise generator and a good amplifier it [Link]
is possible to build an instrument very
close to a tracking generator to use with
any kind of spectrum analyser. It means
that we can “upgrade” an old spectrum

Fig 11 : Equipment setup used for the filter measurement.

18

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 10MHz - 10GHz Noise source diodes pag A 31
1 - Introduction
In VHF Communications 1/2007(1) I described a simple 10MHz to 3.5GHz noise source, the
purpose of that article was to explain how to build a very simple noise generator using the
NS-301 noise diode, either for applications like noise figure measurement or for a broadband
noise generator for scalar applications with a spectrum analyser.
Now I will describe a 10MHz - 10GHz noise source generator with an improved bias network
that uses the NS-303 noise diode.
This project was born some months ago for the 13th E.M.E. (moon bounce) conference in
Florence during August 2008, the organisation asked me to cooperate to build some noise
source generators to give to participants during the conference.
Tests and measurements are supported by 20 pieces of noise source generators built for this
conference, so I think that results are very reliable and repeatable.

2 - Schematic diagram and components

The noise generator uses the NS-303 diode that is guaranteed up to 8GHz but following the
descriptions below it will be very easy to reach 10.5GHz making possible to use it up to the
3cm band (10.368 GHz), using a diode of moderate price.
The aim of this article is to explain how to build a noise generator using easy to find
components.

Diode NS-303 specifications Case: Metal-ceramic gold plated

Frequency range: 10Hz - 8GHz (max. 10GHz)
Output level: about 30dBENR
Bias: 8 - 10mA (8 - 12V)

Fig. 1
Circuit diagram for a noise source 10MHz - 10GHz using a NS-303 noise diode

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 10MHz - 10GHz Noise source diodes pag A 32

Part list
D1 NS-303 noise diode NS-303
U1 LP2951CMX in case SMD SO8 LP2951CMX
C1 10 nF 0805
C2 1 µF 25 V Tantalum
C3 100 nF 0805
C4 1 nF 0805 COG CCB-1n
C5 2 x 1 nF 0805 COG in parallel, see description CCB-1n
ATT1 6 dB chip attenuator dc-12 GHz
ATT2 7 or 8 dB external attenuator dc-12 GHz or better dc-18
GHz
J1 BNC female connector
J2 SMA male panel mount connector Suhner 13SMA50-0-172 SMA-24A
R1 100 Ω 1206
R2 18 Ω 0805
R3, R4, R5 33 to 68 Ω each 0603
L1 6.8 or 8.2 nH 0603 BCQ-6n8-A
RV1 100 Ω trimmer multi turn SMD POT-SM-
101-M
PC BOARD 25N or RO4003 or RO4350 or equivalents, 30 mils, εr 3.40 25N-30
size 11x51 mm, see description

The circuit diagram, Fig 1, is very simple, the power supply is 28V pulsed AC applied to
connector J1 which is normalised in all the noise figure meter instruments. U1 is a low
dropout precision regulator to stabilise the voltage for the noise diode to 8 - 12V, the current
through the diode can be around 8 to 10mA set by trimmer RV1.

2.1 - R3, R4 and R5 resistors

These resistors can be a total of 100 - 220Ω, the total value is not critical, the 0603 case is
very important in order to keep the stray capacitance as low as possible, it would be better to
solder the resistors without using copper track on the PCB see Fig 4.

2.2 - ATT1, ATT2 Attenuators

These attenuators are very important to obtain an output level of about 15dBENR but more
important to obtain an output return loss as low as possible.
In my previous article in issue 1/2007 I described this concept very well, the mismatch
uncertainty is the main cause of errors in noise figure measurement(2).
The total value of attenuators ATT1 + ATT2 can be around 14dB, the pictures Fig 4 – 5 show
a 6dB chip attenuator mounted on the PCB and a 7 or 8dB external good quality attenuator,
in fact the output return loss depends mainly on the last attenuator (ATT2). The first
attenuator (ATT1) can be less expensive and built directly on the PCB because it is less
important for the output return loss.
I used a 7 or 8dB external attenuator in order to obtain the best output ENR value because
every diode has it’s own output noise.
Everyone can change the output attenuator depending on the ENR that is needed; in this
project I chose an output level of 15dBENR so the attenuators have a value of 14dB.

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10MHz - 10GHz Noise source diodes pag A 33

2.3 - C5 dc block output capacitor

The selection of this capacitor is very important to flatten the output level; in the previous
article I only quickly mentioned this fact because we were only talking about 3.5GHz, now in
order to reach 10.5GHz I will do a better description.
The dc block capacitors are used to block the dc voltage and to pass the RF signal with the
minimum possible attenuation. If you use the ATC100A or 100B capacitors they have a very
low insertion loss but have the problem of self resonance in ultra wide band applications, the
graphs below show 2 examples where you can improve the SRF with vertical orientation.

ATC100B 62 pF
□ 110mils = 3mm
The manufacturer guarantees a SRF >
900MHz, in fact the network analyser
shows a SRF of 1.55GHz (with parallel
orientation)

ATC100B 62 pF
□ 110mils = 3mm
With the same capacitor the network
analyser shows a SRF 2.7GHz (with
vertical orientation)

ATC100A 4.7 pF
□ 55mils = 1.5mm
The manufacturer guarantees a SRF >
4GHz, in fact the network analyser shows a
SRF of 7.6GHz (with parallel orientation)

ATC100A 4.7 pF
□ 55mils = 1.5mm
With the same capacitor the network
analyser shows a SRF 12.3GHz (with
vertical orientation)

Fig. 2
Examples of SRF frequency and its improvement

Fig 2 shows 4 graphs of the SRF frequencies for ceramic capacitors and how to improve the
SRF of ATC100A or 100B capacitors for ultra wide band applications.
My decision was to avoid ATC capacitors and to find some capacitors without any SRF and
lower Q, after many attempts and researches I found that NP0 class 1 multi-layer capacitors
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10MHz - 10GHz Noise source diodes pag A 34

with an 0805 case that have the best performances referred to low level applications (not to
be used in RF power applications or in low noise amplifiers).
I choose to put 2 1000pF capacitors in parallel in order to reach a minimum frequency of
10MHz.

C5 capacitor
CCB-1nF
Insertion loss of 1nF NP0
class 1 capacitor with span
10MHz - 12GHz, 1dB/div.
It demonstrates that there are
no SRF in the entire band.

C = 10.5GHz marker

Fig. 3

For ultra broad band applications the ATC manufacturer has a capacitors of 100nF with
16KHz to 40GHz frequency operation in a 0402 case(3) but I prefer to avoid this special
component and use more easy to find one.
In Fig 3 the 1nF capacitors show a low insertion loss, with 2 capacitors in parallel, the marker
C shows an insertion loss of about 0.2dB at 10.5GHz that is appropriate for this project at low
price.

2.4 - P.C. board

The noise generator is considered a passive circuit so it is not necessary to use very
expensive Teflon laminates, moreover the track length is so short that the attenuation
introduced makes it unnecessary to use Teflon laminates. I selected ceramic laminate, that is
very popular in RF applications, with εr 3.40. It is available in several brands and they all
have the same performance, Rogers RO4003 or RO4350, Arlon 25N etc…, with a thickness
of 30mils (0.76mm).
In order to easily reach the 10GHz band it is necessary to remove the ground plane around
R3, R4, R5 and L1, the size is 7 x 4mm

2.5 - Metallic box

As shown in Fig 5 the components of the noise source generator are enclosed in a very small
milled box. Every box behaves like a cavity excited by several secondary propagation
modes. For higher frequencies or in medium size boxes the RF circuit will also have many
secondary propagation modes at various frequencies. Since every box is different in size,
shape and operating frequency the calculation of secondary propagation modes is very
difficult. To avoid this problem microwave absorbers are very often used placed into the
cover of the box to damper the resonance(4).
I selected a very small box in order to avoid both the secondary propagation modes and the
microwave absorber; the size that I used gives no troubles up to 10GHz.
If someone wants to increase the size of the box (internal size) it will be necessary to use a
microwave absorber.

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10MHz - 10GHz Noise source diodes pag A 35

It is also necessary to remove part of the ground plane in the metallic box by milling a 7 x 4 x
3mm deep slot corresponding to R3, R4, R5 and L1.

Fig. 4
P.C. board and mounting
components

R3+R4+R5+L1

Size: 11x51 mm

Fig. 5
Box and final release

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10MHz - 10GHz Noise source diodes pag A 36

3 - Bias current
The nominal current should be 8mA, during my tests I found that the output noise level has a
quite strange but interesting variation: increasing the diode current the output noise level
decrease of about 0.5dB/mA up to about 9GHz, beyond this frequency the effect is exactly
the opposite.
Fig 6 shows the difference in output ENR of about 1dB with 8 and 10mA bias current and Fig
7 shows a little improvement of frequency range by about 500MHz with 8 and 10mA bias
current.
Fig 7 shows the decrease of about 1dB of ENR level with 10mA instead of 8mA maintaining
the same shape in the diagram.
During the calibration it is possible to play with the current to “tune” the ENR level, if you can
loose 1dB of ENR level, you will have a more extended frequency range which is exactly
what is needed to reach the 3cm amateur radio frequency band (10.4GHz).
The bias current can be measured easily directly on the BNC input connector with +28Vdc
from a normal power supply; the input current is more or less the same current through the
noise diode.

Fig. 6
It shows the variation of
output noise level vs. current
Span 10MHz - 3GHz
1dB/div.

Fig. 7
It shows the variation of
output noise level vs. current
Span 3GHz - 11GHz
1dB/div.

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10MHz - 10GHz Noise source diodes pag A 37

4 - Test results
I tested 20 pieces of the noise sources generator and they all gave nearly the same results,
the measurement below, Fig 8, refer to the use of a 6dB internal attenuator plus a 8dB
external attenuator (MaCom or Narda dc-18 GHz).
A typical output noise level can be 15dBENR +/-1.5dB or 15dBENR +/-2dB or 15dBENR +1/-
2dB, a ripple of +/-1.5dB or +/-2dB is a normal values.
The output return loss depends mainly on the external attenuator; I measured a 30dB return
loss up to 5GHz, 28dB up to 8GHz and 25 to 28dB at 10GHz.
We have to consider that each 1dB more of external attenuation will improve the output
return loss by 2dB, so if you can use, for instance, an attenuator of 17/18dB you will reach a
very good return loss (>30/35dB) with an output noise around 5dBENR.

Fig. 8
Typical output noise from 2
different noise sources.
Span 10MHz - 10.5GHz
Reference line 15dBENR
1dB/div.

5 - Calibration
Unfortunately the calibration of a noise source is not an easy thing to do.
We know very well that RF signal generators have an output level precision of typically +/-
1/1.5dB and this doesn’t worry us, we also know that our power meter can reach +/-0.5dB
precision or even better. We need a very high precision for a noise generator used with a
noise figure meter. For the classic noise source 346A, B and C, Agilent gives ENR
uncertainty of +/- 0.2dB max. (< 0.01dB/°C). The new N4000 series are used for the new
noise figure analyser N8975A with ENR uncertainty of +/-0.15 dB max.
In my lab I used the new noise figure analyser N8975A with the precision noise source
N4001A so I can guarantee a typical precision of +/- 0.1dB up to 3GHz and 0.15dB up to
10GHz.
It means that the calibration must be done with a good reference noise source, it can be a
calibrated noise source compared with the one you have built with a low noise preamplifier
and a typical noise figure meter.
Example: you have a low noise amplifier with 0.6dBNF and your calibrated noise source
indicates a 15.35dB of ENR, now you can change the noise source to the one you have built
and for instance you measure 0.75dBNF, it means that your noise source has 15.35 +
(0.75dB - 0.6dB) = 15.50dBENR.

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10MHz - 10GHz Noise source diodes pag A 38

6 - Other application
As I described in the previous article(1) that the noise source can be used as a broadband
noise generator combined with a spectrum analyser like a “tracking generator” for scalar
applications.
This is not a true tracking generator because it works in a different way (read my previous
article(1)). The problem here is to reach 3 decades of frequency range, 10MHz to 10GHz, with
a flat amplifier of at least 50dB.
Today some MMICs are available that can do this work like ERA1, ERA2, MGA86576 etc…,
the problems can be to reach a flat amplification and to avoid self oscillations with such high
amplification.
This device can be very interesting because it can be a useful tool to use with any kind of
obsolete spectrum analyser to tune filters, to measure the return loss etc… up to 10GHz.

For anymore informations regarding noise source diodes see

[Link]/pdf/[Link] (from page A 14)

Notes:
(1) VHF Communications 1/2007 “Noise source diodes”
(2) For those who need more information about the mismatch uncertainty in noise figure
measurement I suggest 3 application notes:
- Ham Radio, August 1978
- Noise figure measurement accuracy AN57-2 Agilent
- Calculating mismatch uncertainty, Microwave Journal May 2008
(3) R.F. Elettronica web site catalogue [Link] (capacitors section)
(4) VHF Communications 4/2004 “Franco’s finest microwave absorber”

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 pag A 39

UKW-Berichte 4/2008

Franco Rota, I2 FHW

Rauschquelle für 10 MHz bis 10 GHz

I 1. Einführung deren Daten bis 8 GHz spezifiziert sind.

Folgt man jedoch der nachfolgenden Be-
Die Idee zu diesem Projekt wurde schreibung, können mit Leichtigkeit 10,5
vor einigen Monaten im Vorfeld der 13. GHz erreicht werden, was bedeutet, dass
E.M.E.-Konferenz in Florenz im August der Generator auch noch im 3-cm-Band
2008 geboren. Von den Organisatoren eingesetzt werden kann, und das mit ei-
wurde ich gebeten, Rauschgeneratoren ner bezahlbaren Diode.
für diese Konferenz zu bauen. Die erfolg- Ziel dieses Artikels ist es unter anderem
reiche Entwicklung führte zum Bau einer einen Weg aufzuzeigen, wie man einen
Reihe von Geräten. Die Tests und Mes- Rauschgenerator mit Standardbautei-
sungen wurden an insgesamt 20 Geräten
durchgeführt. Somit sollten die Ergebnis-
se verlässlich und wiederholbar sein.

Nachfolgend wird also ein Rauschgene-

rator für den Bereich von 10 MHz bis zu
10 GHz beschrieben. Realisiert mit einer
Rauschdiode vom Typ NS-303 mit einer
verbesserten BIAS-Schaltung.
Bild 1: Rauschdiode Typ NS-303 im ver-
goldeten Metall-Keramik-Gehäuse;
2. Die Schaltung
I
Frequenzbereich: 10 Hz - 8 GHz
(max. 10 GHz)
Das Herzstück dieses Rauschgenera- Ausgangspegel: ca. 30 dBENR,
tors ist die Diode vom Typ NS-303 (Bild 1), BIAS: 8 - 10 mA (8 - 12 V)

209

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 pag A 40

Franco Rota, I2 FHW, Rauschquelle ...

Bild 2: Das Schaltbild einer Rauschquelle mit der Rauschdiode

NS-303 für den Bereich 10 MHz bis 10 GHz

len realisieren kann. Das sehr einfache Tabelle 1: Bauteilliste:

Schaltbild ist in Bild 2 dargestellt. Die
D1 NS-303, Rauschdiode
Bauteileliste folgt in Tabelle 1.
U1 LP2951CMX, SMD,
Die Versorgung erfolgt über 28 V ge- SO8-Gehäuse
pulste Wechselspannung, die an den C1 10 nF, 0805
Anschluss J1 gelegt wird; das ist ein C2 1μF, 25 V, Tantal
Standard für alle Rauschzahlmessgeräte. C3 100 nF, 0805
Mit dem Präzisions-Spannungsregler U1 C4 1 nF, 0805, COG
wird die Spannung für die Rauschdiode C5 2 x 1 nF, 0805, C0G parallel
auf 8 bis 12 V stabilisiert. Der Strom durch ATT1 6 dB Chip-Dämpf. bis 12 GHz
die Diode kann zwischen 8 und 10 mA ATT2 7 / 8 dB ext. Dämpfungsglied,
betragen und wird mit dem Trimmer RV1 DC-12 GHz oder DC-18 GHz!
eingestellt. J1 BNC-Buchse
J2 SMA-Flansch-Stecker

I
2.1. Die Widerstände R1 100 Ω, 1206
R2 18 Ω, 0805
R3 - R5 R3-5 33 Ω bis 68 Ω, 0603
L1 6,8 nH oder 8,2 nH, 0603
Diese Widerstände haben einen RV1 100 Ω SMD-Trimmer,
Gesamtwert von 100 bis 220 Ω, wobei Mehrgang, (POT-SM-101-M)
der Absolutwert nicht kritisch ist. Sehr PCB 25N oder RO4003 oder
wichtig dagegen ist die Gehäusegröße RO4350; 30 mils; εr 3,40;
0603, damit die Streukapazität so gering 11 x 51 mm
210

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 pag A 41

UKW-Berichte 4/2008

Bild 3a.)
ATC100B mit 62 pF 100 mils = 3 mm
Der Hersteller garantiert Eigenresonan-
zen erst oberhalb 900 MHz; tatsächlich
findet man die erste bei 1,55 GHz bei
„liegender“ Montage

Bild 3b.)
ATC100B mit 62 pF 100 mils = 3 mm
Der selbe Kondensator hat bei „gekipp-
ter“ Montage seine 1. Eigenresonanz
bei 2,7 GHz

Bild 3c.)
ATC100A mit 4,7 pF 55 mils = 1,5 mm
Der Hersteller garaniert Eigenresonan-
zen erst oberhalb von 4 GHz; tatsächlich
findet man die erste bei 7,6 GHz bei „lie-
gender“ Montage

Bild 3d.)
ATC100A mit 4,7 pF 55 mils = 1,5 mm
Der selbe Kondensator hat bei „gekipp-
ter“ Montage seine 1. Eigenresonanz
erst ein 12,3 GHz

Bilder 3a-d: Eigenresonanzen von Kondensatoren in Abhängigkeit ihrer Einbaulage

wie möglich gehalten wird. Ebenso ist es platte ohne Kupferbahn direkt aneinan-
sinnvoll die Widerstände auf der Leiter- der zu löten (Bild 5).
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Bild 4:
Der Kondensator C5
als 1 nF-Version. Zu
sehen ist die Einfüge-
dämpfung des 1 nF,
NPO, Klasse 1-Kon-
densators, dargestellt
im Bereich 10 MHz
bis 12 GHz bei 1 dB/
Div. Man sieht, dass
über den gesamten
Bereich keine Eigen-
resonanzen zu finden
sind; der Marker
C = 10,5 GHz

2. 2. Die Abschwächer

I
durchaus preiswerter sein und direkt auf
die Leiterplatte gelötet werden, da er für
Diese Dämpfungsglieder sind hier eine gute Ausgangsanpassung weniger
sehr wichtig um einen Ausgangspegel entscheidend ist.
von etwa 15 dBENR zu erhalten. Viel wich-
tiger ist noch eine Rückflussdämpfung Hier wurde ein externes Dämpfungsglied
am Ausgang, die so niedrig wie möglich mit 7 bzw. 8 dB eingesetzt um den besten
ist. In [1] wurde bereits beschrieben, dass Ausgangs-ENR-Wert zu erhalten, da jede
der Hauptgrund für Fehler bei Rausch- Diode ihr eigenes Ausgangsrauschen hat.
zahlmessungen die Unsicherheit der
Fehlanpassung ist. Der Gesamtwert der Natürlich kann jeder individuell den Wert
beiden Abschwächer ATT1 + ATT2 kann des Ausgangsdämpfungsglieds wählen,
bei etwa 14 dB liegen. je nach benötigem ENR. Hier wurde ein
Die Bilder 5 und 6 zeigen ein 6 dB-Chip- Ausgangspegel von 15 dBENR gewählt,
Dämpfungsglied, das auf eine Leiterplat- was auf Abschwächerwerte von 14 dB
herausläuft.
te montiert wurde und ein externes 7 - 8
dB Dämpfungsglied von guter Qualität.

I
Es zeigt sich, dass die Ausgangs-Rück-
2.3. Der Ausgangs-
flussdämpfung hauptsächlich vom letz- kondensator
ten Abschwächer (ATT2) bestimmt wird.
Der erste Abschwächer (ATT1) kann Der Wahl des Ausgangskondensa-
tors C5 ist hier sehr viel Aufmerksamkeit

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Bilder 5:
Massefläche
mit Aussparung;
Layout der SMD-
Bestückungsseite;
bestückte Leiterplatte
und Layout der
kleinen Leiterplatte
für die Rauschquelle

zu schenken! Hat er doch gewaltigen Ein- in Breitbandanwendungen das Problem

fluss auf die Ebenheit des Ausgangspe- von Eigenresonanzen. Dies kann man
gels, zumal das Ausgangssignal ja hinauf etwas verbessern, indem man die Chip-
bis 10,5 GHz reichen soll. Kondensatoren nicht liegend, sondern
seitlich gekippt einbaut (Bild 3).
Der Ausgangskondensator soll die
Gleichspannung auf dem Ausgangssi- In den einzelnen Teilbildern von Bild 3
gnal abblocken und lediglich das HF- sind jeweils die Orientierung (Monta-
Signal mit geringstmöglichen Verlusten gerichtung) der ATC-Kondensatoren
durchlassen. ATC100B und darunter ATC100A gezeigt.
Jeweils im Hintergrund sind die Eigenre-
Verwendet man beispielsweise SMD- sonanzkurven über der Frequenzachse
Kondensatoren vom Typ ATC100A oder dargestellt.
100B, so haben diese eine sehr geringe
Einfügedämpfung. Jedoch haben diese Um die Eigenresonanzen der ATC-Kon-

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Franco Rota, I2 FHW, Rauschquelle ...

Bild6:
Das schmale
Alu-Fräsgehäu-
se mit BNC- und
SMA-Anschlüs-
sen; darunter
im Detail die
Bemaßung der
Vertiefung im
Gehäuse
(siehe Text)

densatoren zu vermeiden, wurde nach Die geringe Einfügedämpfung der 1 nF-

Alternativen Ausschau gehalten, die Kondensatoren ist in Bild 4 dargestellt.
möglichst keine Resonanzstellen und ein Die Parallelschaltung der beiden Konden-
niedrigeres Q haben. Viele Bauteile wur- satoren bringt auf 10,5 GHz (Marker C)
den überprüft und gemessen, bis sich eine Einfügedämpfung von lediglich 0,2
folgendes Ergebnis zeigte: Multilayer- dB; das ist für dieses Projekt in Ordnung -
Kondensatoren (Klasse 1) in der Größe und das zu einem günstigen Preis.
0805 mit Material NPO zeigen hier, also
für Kleinleistungsanwendung, das beste 2.4. Die Leiterplatte
Verhalten, (sie sind jedoch für HF-Leis-
tungsanwendungen oder für rauscharme
Verstärker ungeeignet!).
Gewählt wurde hier die Parallelschaltung
I Der Rauschgenerator sollte eigent-
lich eine passive Schaltung sein, weshalb
keine teure Teflon-Leiterplatte erforder-
von zwei 1000 pF-Kondensatoren um lich ist. Außerdem sind die Leitungslän-
auch nach unten minimal bis 10 MHz zu gen sehr kurz und die verursachten Ver-
kommen. luste noch akzeptabel - also kein Teflon.
Speziell für Breitband-Anwendungen Gewählt wurde hier ein Keramik-Lami-
wird von ATC ein 100 nF-Kondensator in nat, was für HF-Anwendungen durchaus
üblich ist, mit einem εr von 3,40. Dieses
der Bauform 0402 [3] angeboten; nach-
gibt es von verschiedenen Herstellern
dem dies jedoch ein Spezialbauteil ist, mit vergleichbaren Eigenschaften: RO-
wurden die oben beschriebenen leichter GERS RO4003 oder RO4350, Arlon 25N
verfügbaren Bauteile bevorzugt.
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Bild 6b: Die bestückte Leiterplatte fertig eingebaut in das

Fräsgehäuse; darunter das „Endprodukt“ mit externem
Dämpfungslied (rechts)

u.s.w. jeweils mit einer Stärke von 30 mils quenzen der eingebauten Schaltungen
(0,75 mm). unterschiedlich sind, ist die Berechnung
der sekundären Ausbreitungsmodi sehr
Um auch wirklich noch das 10 GHz-Band
schwierig.
abdecken zu können, ist es erforderlich
die Massefläche um R3, R4, R5 und L1 zu Um dieses Problem zu umgehen, werden
entfernen; die Maße sind 7 mm x 4 mm häufig Mikrowellenabsorbermaterialien
(Bild 5). (z.B. leitfähiger Schaumstoff ) eingesetzt,
die z.B. in den Gehäusedeckel geklebt
2.5. Das Metallgehäuse werden. Damit versucht man mögliche

I Die Bauteile des Rauschgenerators

werden in ein sehr kleines gefrästes Alu-
gehäuse eingebaut. Leider verhält sich
Resonanzen zu bedämpfen oder zu ver-
hindern.
Der Versuch, all diesen Problemen aus
dem Weg zu gehen, führte zu einem sehr
jedes Gehäuse wie ein Hohlleiter mit et- kleinen Gehäuse, das problemlos bis 10
lichen Ausbreitungsmoden. Für höhere GHz einsetzbar ist. Möchte jemand die
Frequenzen oder für mittelgroße Gehäu- Innenmaße größer gestalten, wird wie-
se wird die HF-Schaltung ebenfalls etli- der Absorbermaterial notwendig wer-
che sekundäre Ausbreitungsmodus auf den. Weiterhin ist es notwendig, einen 3
verschiedensten Frequenzen haben. mm tiefen Spalt (7 mm x 4 mm) unter den
Da jedes Gehäuse eine unterschiedliche Widerständen R3, R4, R5 und L1 aus dem
Größe und Form hat und die Arbeitsfre- Gehäuseboden zu fräsen, damit der Ab-
stand zur Massefläche größer wird.
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Franco Rota, I2 FHW, Rauschquelle ...

Bild 7:
Hier sieht man die
Rauschpegel bei
8 mA bzw. 10 mA
Diodenstrom;
Bereich: 10 MHz bis
3 GHz bei 1 dB/Div.

I 3. Der Bias-Strom mit dem Strom „spielen“ um so den ENR-

Pegel zu optimieren. Man muss sich also
Der Nominalwert sollte bei etwa 8 beim Abgleich entscheiden, ob man eher
mA liegen. Bei den Tests stellte sich et- auf 1 dB-Ausgangspegel verzichten kann
was sehr eigenartiges bezüglich des Aus- zugunsten eines erweiterten Frequenz-
gangsrauschpegels heraus: erhöht man bereiches bis einschließlich 3-cm-Band,
den Diodenstrom, so nimmt der Pegel oder ob man mehr Pegel haben möchte
mit etwa 0,5 dB/mA ab bis zu etwa 9 GHz, und dann eben nicht bis 10 GHz kommt.
darüber zeigt sich jedoch der entgegen- Den BIAS-Strom kann man einfach direkt
gesetzte Effekt - der Pegel steigt! an der BNC-Eingangsbuchse messen,
Den Unterschied des Ausgangs-ENR von wenn man 28 V-DC von einem normalen
etwa 1 dB bei einem BIAS-Strom von 8 Netzteil anlegt; der gemessene Strom ist
bzw. 10 mA zeigt Bild 7. Eine Erweite- mehr oder weniger genau der Strom, der
rung des Frequenzbereichs um etwa 500 durch die Diode fließt.
MHz bei einem BIAS-Strom von 8 bzw. 10
mA zeigt Bild 8. Weiterhin sieht man den 4. Testergebnisse
Rückgang des Pegels um etwa 1 dB bei
10 mA anstelle von 8 mA bei etwa gleich-
bleibender Kurvenform.
Natürlich kann man beim Abgleich etwas
IIm Rahmen dieses Projekts wur-
den 20 Rauschgeneratoren aufgebaut
und getestet. Die Messergebnisse für
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Bild 8:
Der Ausgangs-
Rauschpegel bei
verschiedenen
Diodenströmen,
hier dargestellt
bis 11 GHz
bei 1 dB/Div.

alle Geräte waren nahezu identisch. Die weise ein externes Dämpfungsglied von
Messkurven in Bild 9 wurden mit einem 17 oder 18 dB kann man eine sehr gute
internen 6 dB und einem externen 8 dB- Rückflussdämpfung in der Größenord-
Dämpfungsglied (MaCom oder Narda nung >30 - 35 dB erreichen; das Rausch-
DC-18 GHz) erstellt. signal liegt dann bei etwa 5 dBENR.
Ein typischer Ausgangs-Rauschpegel

I
kann z.B. 15 dBENR ± 1,5 dB oder 15 dBENR 5. Abgleich
± 2 dB oder 15 dBENR +1/-2 dB sein, wobei
eine Pegelschwankung von ± 1,5 oder ± Der Abgleich einer Rauschquelle
2 dB ein normaler Wert ist. ist leider etwas aufwendiger.
Die Rückflussdämpfung am Ausgang Wenn man sich die Daten z.B. eines HF-Si-
hängt hauptsächlich vom externen gnalgenerators ansieht, findet man eine
Dämpfungsglied ab. So konnten Werte Genauigkeit des Ausgangssignals von
von 30 dB bis 5 GHz, 28 dB bis 8 GHz und typ. ± 1 - 1,5 dB; das wird auch weithin
25 (-28 dB) bei 10 GHz gemessen wer- akzeptiert. Sehr genaue Leistungsmess-
den. geräte erreichen eine Genauigkeit von ±
Hierbei gilt ganz einfach, dass jedes dB 0,5 dB oder sogar besser.
mehr am externen Dämpfungsglied Möchte man allerdings die Rauschzahl
die Rückflussdämpfung gleich um 2 dB messen, liegen die Anforderungen noch
verbessert. Verwendet man beispiels- etwas höher; das beduetet, dass die
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Franco Rota, I2 FHW, Rauschquelle ...

Bild 9:
Typische Kurven
zweier verschiedener
Rauschgeneratoren;
Bereich 10 MHz bis
10,5 GHz bei 1 dB/Div.

Rauschquelle einen sehr genau definier- Aufbau mit einem rauscharmen Vorver-
ten Pegel liefern muss. stärker und einem typischen Rauschzahl-
Für die klassischen Rauschquellen, wie messgerät verglichen.
346A, B oder C gibt AGILENT eine ENR- Beispiel:
Unsicherheit von ± 0,2 dB (bei 0,01 dB/°C)
Man verwendet einen rauscharmen Ver-
und 0,15 dB maximal an. Für den neuen
stärker mit einer bekannten Rauschzahl
Rauschzahl-Analysator N8975A werden
von 0,6 dB und die kalibrierte Rausch-
Rauschquellen der neuen N4000er-Serie
quelle liefert 15,35 dBENR. Wechselt man
eingesetzt.
nun die Rauschquellen und schließt die
Verwendet man im Labor ein Rausch- Eigenbauversion an, misst man z.B. eine
zahlmessgerät N8975A mit einer Rausch- Rauschzahl von 0,75 dB. Das bedeutet,
quelle N4001, so kann man beispielswei- dass die eigene Rauschquelle einen Pe-
se typ. Genauigkeiten der Messung von ± gel von: 15,35 dB + (0,75 dB - 0,6 dB) =
0,1 dB bis 3 GHz und 0,15 dB bis 10 GHz 15,50 dBENR hat.
erreichen.

I
Das bedeutet, dass der Abgleich der hier 6. Weitere
beschriebenen Rauschquelle idealer Wei-
se mit einer sehr guten Rauschquelle als
Anwendungen
Vergleich vorgenommen werden sollte. Eine Rauschquelle kann auch als
Also wird die Eigenbau-Rauschquelle Breitband-Rauschgenerator zusammen
mit einer kalibrierten Rauschquelle im
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 pag A 49

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mit einem Spektrum-Analysator wie 7. Literaturhinweise

ein
„Tracking-Generator“ für skalare
Anwen-
dungen eingesetzt werden.
I Nachfolgend noch Links und
Lite- raturhinweise zum Artikel:

Natürlich ist das kein echter [1] VHF-Communications 1/2007

„Tacking- Generator“, weil er ja ganz „Noise source diodes“
anders arbei- tet. Das Problem liegt [2] For those who need more
einfach darin, dass man einen information about the mismatch
Frequenzbereich über 3 Deka- den uncertainty in noise figure
erreichen sollte, also von 10 MHz bis measurement I suggest 3 applica-
10 GHz mit einem linearen Verstärker tion notes:
mit mindestens 50 dB Verstärkung! - Ham Radio, August 1978,
Es gibt heutzutage - Noise figure measurement accuracy
entsprechende MMICs, die AN57-2 Agilent,
hierfür geeignet wären, wie die - Calculating mismatch uncertainty,
Typen ERA-1, ERA-2, MGA Microwave Journal May 2008
86576 u.s.w. Problematisch ist jedoch, [3] R.F. Elettronica web site cataloque
eine sehr flache Verstärkungskurve [Link] (capacitors
über den gro- ßen Frequenzbereich section)
zu erhalten und die Schwingneigung
bei so hohen Verstär- kungen zu [4] VHF-Communications 4/2004
verhindern. „Franco´s finest microwave absorber“

So eine Baugruppe kann natürlich Übersetzung Englisch -

ein sehr nützliches Hilfsmittel für die Deutsch: Eberhard L.
unter- schiedlichsten Messaufgaben Smolka, DB 7 UP
sein. Es kann beim Filterabgleich
mit Spektrum- analysatoren
eingesetzt werden oder zur Messung
der Rückflussdämpfung - und das
bis 10 GHz.
ANZEIGE

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