1. a. Using the characteristics of Figure 2.

147, determine ID, VD, and VR for the

circuit of Figure 2.147a.

b. Repeat part (a) using the approximate diode model and compare the results.

c. Repeat part (a) using the ideal diode model and compare the results.

a)

E
ID=
R

8V
ID=
0.33 kΩ

ID=24.24 mA

VD=0.92 V
VR=E−VD
VR=8V −0.92 V
VR=7.08 V
b)
VD=0.7 V
VR=E−VD
VR=8−0.7 V
VR=7.3 V
c)
VD=0
VR=E−VD
VR=8−0 V
VR=8V

For (a) and (b), the voltage levels of the diodes are quite close. The levels in
part (c) are reasonably close but as expected due to the applied voltage level E.

2. a. Using the characteristics of Fig. 2.147b, determine ID and VD for the circuit of
Fig. 2.148.
b. Repeat part (a) with R = 0.47 k

c. Repeat part (a) with R = 0.18 k

d. Is the VD level relatively close to 0.7 V in each case? How do the resulting ID levels
compare? Comment accordingly.

to)

VD=5 V

E
ID=
R

5V
ID=
2.2 kΩ

ID=2.27 mA

According to the graph in figure b) the current is 2mA and the voltage is 0.7V
b)

E
VD=5 V ID=
R

5V
ID=
0.47 kΩ

ID=10.64 mA

According to the graph in figure b) the current is 9mA and the voltage is 0.8V

c)

E
VD=5 V ID=
R

5V
ID=
0.18 kΩ

ID=27.78 mA

According to the graph in figure b) the current is 22.5mA and the voltage is 0.93V

The resulting values of the voltage across the diode are quite close, while the diode
currents range from 2 mA to 22.5 mA.

3. Determine the value of R for the circuit in Figure a that will produce a current
through the diode of 10 mA if E=7 V . Use the characteristics of figure b for the
diode.
Figure a. Circuit

Figure b. Diode characteristics

Data:

E=7 V

Corriente en el diodo I D 1 =10 mA

R=?[Ohms ]

Solution:

10 mA caracteriticas voltaje del diodo 0.7 V and Vd=7 [V ]

Figure c. Trace of the load line and the operating point

A=( 0.7 , 10 ) B=(7 ,0)

m=−1.6

Ec . Recta de carga ID=−1.6 ( VD ) +11.2

Ec . Recta de carga ID=−1.6 ( VD ) +11.2

Crossing point between (ID and VD)

E
para VD=0 ID=11.2 mA=
R

We calculate the resistance

E
ID=11.2mA=
R

7V
R= =0.625[ KΩ]
11.2mA

4. a) With the approximate characteristics of the Si diode. determine V D , I D y V R

for the circuit in the figure.
b) Perform the same analysis of part (a) with the ideal model for the diode
c) Do the results obtained in parts (a) and (b) follow that the ideal model can be
a good approximation of the real response under some conditions?

Solution

Data:

E=30 V

Voltaje de diodo Si 0.7 V

R=2.2[KΩ]
 a) I D =I R
L .V . K
−30 V +0.7 V + I R R=0

29.3 V
I R= =13.318 [mA ]
2.2 [KΩ]
V D=0.7 [V ]
V R=I R∗R

V R=( 13.318 [ mA ] )∗( 2.2 [ KΩ ] )

V R=29.03 [ V ]

Voltaje de diodo ideal 0 V

b) I D =I R
L .V . K
−30 V +0 V + I R R=0

30 V
I R= =13.636 [mA ]
2.2 [KΩ]
V D=0 [V ]
V R=I R∗R

V R=( 13.636 [ mA ] )∗( 2.2 [ KΩ ] )

V R=30 [ V ]

c) If given in section (b) the consumption of the Diode Voltage is 0 and the current
is equal, therefore they are quite close
5. Determine the current I for each of the configurations in Figure 2.150 using the
equivalent diode model .
to)

I =0 mA (Reverse biased diode)

b)

V 20 Ω=20V −0.7 V =19.3 V (LVK)

19.3V
I= =0.965 A
20 Ω

c)

10V
I= =1 A
10 Ω

6. DetermineV o and I D for the networks of Figure 2.151

to)

(LVK) −5 V +0.7 V −V o=0

V o =−4.3 V

|V o| 4.3 V
I R =I D = = =1.955 mA
R 2.2 K Ω

b)

8 V −0.7 V
I D= =1.24 mA
1.2 K Ω+4.7 K Ω

V o =V 4.7 k Ω +V D =( 1.24 mA ) ( 4.7 K Ω )+ 0.7 V =6.53 V

7. Determine the level ofV o for each of the networks in figure 2.152
to)

2 K Ω ( 20V −0.7 V −0.3 V )

V o=
2 K Ω+ 2 K Ω

1 1
¿ ( 20 V −1 V )= ( 19 V )=9.5V
2 2

b)

( 10V + 2V −0.7 V ) 11.3V

I= = =1.915 mA
1.2 K Ω+4.7 K Ω 5.9 k Ω
'
V =IR=( 1.915 mA ) ( 4.7 K Ω ) =9 V
'
V o =V −2V =9 V −2V =7 V

8. Determine Vo and ID for the networks in Figure 2.153.

a) Thevenin equivalent circuit

Vth=I . R

Vth=( 10 mA ) ( 2.2 k )

Vth=22V

Rth=2.2 k
 22 V −0.7 V
Id=
2.2 k +1.2 k

Id=6.26 mA

Vo=Id . R

Vo=(6.26 mA)(1.2 k )

Vo=7.51V

b)
20 V +5 V −0.7 V
Id=
6.8 k

Id=3.58 mA

Vo−0.7 V +5 V =0
Vo=−4.3 V
9. Determine Vo1 and Vo2 for the networks in Figure 2.154.

a)
Vo 1=12 V −0.7 V
Vo 1=11.3 V
Vo 2=0.3V
b)
Vo 1=−10 V +0.3 V + 0.7 V
Vo 1=−9V

10V −0.7 V −0.3V

I=
1.2 k +3.3 k
I =2 mA
Vo 2=−(2 mA )(3.3 k )

Vo 2=−6.6 V

2.4 Parallel and series-parallel configurations

10. Determine Vo and ID for the networks in Figure 2.155.

a)
20 V −0.7 V
I 4.7 k =
4.7 k
I 4.7=4.1 mA

4.1mA
Id=
2
Id=2.05 mA

Vo=20 V −0.7 V
Vo=19.3V

b)
15 V +5 V −0.7 V
Id=
2.2 k
Id=8.77 mA

Vo=15 V −0.7 V
Vo=14.3V
*11. Determine Vo and I for the networks of Fig. 2.156

a) The Germanium diode is "on" and prevents the Silicon diode from turning on:
10V −0.3 V 9.7 V
I= I=
1k Ω 1k Ω
I =9.7 mA
b)

16 V −0.7 V −0.7 V −12 V 2.6 V

I= I=
4.7 k Ω 4.7 k Ω
I =0.553 mA
 Vo=12V +(0.553 mA )(4.7 k Ω)

Vo=14.6 V

12. Determine Vo1, Vo2, and I for the network in Figure 2.157.

V O 1=0.7 V ,V O 2 =0.3 V

20 V −0.7 V
I 1 k Ω=
1k Ω
 19.3V
I 1 k Ω=
1k Ω

I 1 k Ω=19.3 mA

0.7 V −0.3V
I 0.47 K Ω=
0.47 k Ω
0.5 V
I 0.47 K Ω=
0.47 k Ω

I 0.47 K Ω=0.851 mA

I D =I 1k Ω−I 0.47 K Ω

I D =19.3 mA−0.851mA

13. Determine Vo e I D for the networks of figure 2.158.

 2 k Ω ( 10 V −0.7 V )
V 0=
1 k Ω+2 k Ω

2 k Ω ( 9.3 V )
V 0=
3k Ω

V 0=6.2V

6.2V
I 2 k Ω=
2k Ω

I 2 k Ω=3.1 mA

I 2k Ω
I D=
2k Ω

3.1 mA
I D=
2k Ω

I D =1.55 mA
14. Determine Vo for the network of Figure 2.39 with 0 V at both inputs.

There is no voltage necessary for the operation of the diodes, which do not work and
Vo=0
fifteen. Determine Vo for the network of Fig. 2.39 with 10 V at both inputs.

Vo=10−0 ,7
 Vo=9 , 3

Both diodes are working

16. Determine Vo for the network of Fig. 2.42 with 0 V at both inputs.

Vo=0.7 V

Both diodes are working

17 . Determine Vo for the network of Fig. 2.42 with 10 V at both inputs.

V o =10V

Both diodes are not working

18 . Determine Vo for the negative logic OR gate of Fig. 2.159.

 V o =−5 V + 0 ,7 V

V o =−4 ,3 V

The Si diode with -5 V at the cathode is working while the other one is not working.

19. Determine Vo for the negative logic AND gate of Fig. 2.160.

V o =0 V −0 , 7 V

V o =−0 , 7 V

20. Determine the Vo level for the gate in Fig. 2.161

Vo=+10 V
Since all terminals in the system are at 10 V, the required 0.7 V difference cannot be
established across any of the diodes. Therefore, both diodes are "off" and Vo = +10 V
as set by the 10 V supply connected to the 1 kΩ resistor
21. Determine Vo for the configuration of Fig. 2.162

Vo=5V −0.3 V

Vo=4.7 V

The Si diode requires more terminal voltage than the Ge diode to turn on. Therefore,
with 5 V at both input terminals, assume the Si diode is "off" and the Ge diode "on".
22. Assuming an ideal diode, plot vi, vd, and id for the half-wave rectifier of Fig.
2.163. The input is a sine waveform with a frequency of 60 Hz.

Vdc=0.318 Vm

Vdc
Vm=
0.318

2V
Vm= V
0.318

Vm=6.28 V

Vm
ℑ=
R

6.28
ℑ=
2.2 KΩ

ℑ=2.85 mA

23. Repeat problem 22 with a silicon diode (VK = 0.7 V)

24. Repeat Problem 22 with a 6.8 k load applied as shown in Figure 2.164. Plot vL and
iL.

25. For the network of figure 2.166; trace vo and determine Vcd

26.- For the network in figure 2.166, draw V 0 e I R

V 0=V 10k

V 10 k =0.7 V

V 0=0.7 V

−10+0.7 +1k I =0
 −9.3+1 k I =0

1k I =9.3

9.3
I=
1k

I =9.3 m A

27.- a. Dadaist Pmax =14 mW For each of the diodes in Figure 2.167, determine the
maximum current ratings of each diode (using the approximate equivalent model).

b. Determine I max for V imax=160 V

c. Determine the current through each diode inV imax using the results of part (b)

d. If there is only one diode, determine the current through it and compare it to the
maximum ratings.

a)
¿ Pmax =14 mW = ( 0.7 V ) I D

14 mW
I D=
0.7 V

I D =20 mA

b)

4.7 k∗56 k
4.7 k + 56 k

¿ 4.34 k

V R=160 V −0.7 V
 V R=159.3

159.3 V
I max=
4.34 k

I max=36.71mA

c)

I max
I diode =
2

I 36.71V
diode=¿ ¿
2

I diode=¿ 18.36mA ¿

29.- A full-wave rectifier in bridge configuration with a 120 V rms sinusoidal input has
a 1 k load resistor.

to. If silicon diodes are used, what is the voltage available at the load?

b. Determine the PIV rating of each diode.

c. Find the maximum current through each diode during conduction.

d. What is the required power rating of each diode?

to)

V M =❑√ 2 ( 120 V )=169.7 V

V i=V i −2V D

V i=169 V −2(0.7 V )

V i=168.3 V

V dc =0.636 (168.3 V )
 V dc =107.4 V

b)

PIV =V i+V D

PIV =168.3 V + 0.7V

PIV =169 V

c)

Vi
I D (max )=
R

168.3V
I D (max )=
1k

I D (max )=168.3 mA

d)

Pmax =V D I D

Pmax =( 0.7 V ) ( 168.3 mA )

Pmax =117.81 mW

29. Determine vo and the nominal value of PIV for each of the diodes in the
configuration of Figure 2.168.

Positive negative

Vi−0 , 7+VR−0 ,7=0 Vo=−2Vo−Vi

Vi=−2Vo−Vo Vo=−100

VR=−Vi+1 , 4 PIV ≥Vm=100

VR=−Vi PIV on each diode

Vo=−100

PIV ≥Vm=100

PIV on each diode

30. Plot vo for the network of Fig. 2.169 and determine the available dc voltage.

Positive negative

2.2 K∗Vi 2.2 K∗Vi

Vo¿ =50V Vo= =50 V
2.2 K +2 , 2 K 2.2 K +2 , 2 K

VCD=0,318 ( 2 ) ¿EITHER)
VCD=31 , 8V

31. Plot vo for the network of Fig. 2.170 and determine the available dc voltage.

Positive

2.2 K (2 ,2 K )
2 , 2 K II 2, 2 K= =1, 1 K
2.2 K + 2, 2 K

Vi=2 ,2 ki+1 , 1 ki
 Vi
I=
2 ,2 k +1 , 1 k

I =51 ,5 mA

V 1 ,1 k =( 51, 5 m ) (1 , 1 k )=56 ,67 V

V 2 ,2=113 , 33 V

Vo=V 2, 2=56 ,67 V

vcd

VCD=2 ( 0,318 ) 56 , 67

VCD=36 , 04

32. Determine Vo for each of the networks in Figure 2.171 with the input shown.

Silicon diode.

Analysis by positive half cycle

V O =V i
V O =0 V
Analysis by negative half cycle

V O −0.7 V +20 V =0
V O =0.7 V −20 V
V O =−19.3 V

ideal diode

Analysis by positive half cycle

V O =V i−5 V
V O =5V −5 V
V O =0 V

Analysis by negative half cycle

V O =V i−5 V
V O =−20 V −5 V
V O =−25 V
33. Determine Vo for each of the networks in Figure 2.172 with the input shown.

a) Figure a

Analysis by positive half cycle, we calculate by voltage dividers

1.2 kΩ ( 10 V −0.7 V )
V 0=
1.2 KΩ+2.2 KΩ

V 0=3.8V

Analysis by negative half cycle, diode open.

V O =V i
V O =0 V
 b) Figure b

Analysis by positive half cycle

V O =V i+ 5V −0.7 V

V O =10V + 5V −0.7 V

V O =14.3V
Analysis by negative half cycle, diode open.

V O =V i
V O =0 V

34. Determine Vo for each of the networks in Figure 2.173 with the input shown.
a) Figure a

Positive half cycle analysis, ideal diode open.

V O =V i
V O =0 V
Analysis of negative half cycle, applying Kirchhoff's law of voltages.
−5 V +2 V −V O =0
V O =−3 V

b) Figure b

Positive half cycle analysis

V O =V i=20 V
V O =20 V

Negative half cycle analysis, ideal diode open but the output voltage is 5V.

V O =−V i=−5 V
V O =5V
35. DetermineV O for each of the networks in Figure 2.174 with the input shown

a) Figure a
Analyzing the positive half cycle
V O −0.7 V −4 V =0
V O =0.7 V +4 V
V O =4.7 V
Analyzing the negative half cycle
V O =V i
V O =8 V
Resulting Wave:
b) Figure b

Analyzing the positive half cycle

V O =V Si
V O =0.7

Analyzing the negative half cycle

I R =0
V r =I R∗R
V r =0 V

V O =V i−4 V
V i=0
V O =−4 V

V O + 4 V +8 V =0
V O =−12V
Resulting Wave:

36. Tracei R andV O for the network of Figure 2.175 with the input shown.
Analyzing the positive half cycle
V O −0.7 V −5.3 V =0
V O =0.7 V +5.3 V
V O =6 V

V R +0.7 V +5.3 V −10 V =0

V R=−0.7 V −5.3 V +10 V
V R=4 V

VR 4V
iR = = =0.4 mA
R 10 K Ω

Analyzing the negative half cycle

V O +0.7 V + 7.3V =0
V O =−0.7 V −7.3 V
V O =−8 V

V R−0.7 V −7.3 V +10V =0

V R=+0.7 V +7.3 V −10 V
V R=−2 V

V R −2 V
iR = = =−0.2 mA
R 10 K Ω

Resulting Wave:
 BRAS
37. TraceV O for each of the Networks in the Figure. With the entry shown.

c) Figure a
Analyzing the negative half cycle
V i−V c −0.7 V =0
20−V c =0
−V c =−20+ 0.7
V c =19.3
V O =−0.7 V
Analyzing the positive half cycle
V O −V i−V c =0
V O =20 V + 19.3V
V O =39.3V
Resulting Wave:

d) Figure b

Analyzing the negative half cycle

V O +5 V +0.7 V =0
V O =−5.7 V
 −V i +V c +5 V +0.7 V =0
V c =20 V −5V −0.7 V
V c =14.3 V

Analyzing the positive half cycle

V O −V i−V c =0
V O =20 V + 14.3V
V O =34.3V
Resulting Wave:

38. TraceV O for each of the networks in the following figure with the input shown.
Would it be a good approximation to consider the diode to be ideal in both
configurations? Because?

a)
Analyzing the negative half cycle

V O =−0.7 V

120 V −0.7 V −V c =0
V C =120 V −0.7 V
V c =119.3V

Analyzing the positive semi-cycle

120 V +V c −V O =0
V O =120V + V c
V O =239.3 V

Resulting wave:
Figure b)
Analyzing the positive semi-cycle

V O −0.7 V −20 V =0

V O =20.7 V

120 V −V O −V c =0
V C =120 V −V O
V c =99.3V

Analyzing the negative half-cycle

120 V +V c +V O=0
V O =−120 V −V c
V O =−219.3 V

Resulting wave:
 It would be a good approximation to carry out the calculations using ideal
diodes since the values would only vary by 0.7V, which is the voltage at which
the silicon diode conducts.

39. For the network of figure 2.178 :

a) Calculate 5t.

b) Compare 5t with half the period of the applied signal.

c) TraceV O .

a) 5 t=5( R)(C)
5 t=(5)(50 K Ω)(0 , 1uF )
5 t=28 ms .
 1 1
b) T = = =1 ms
f 1 KHz
T
5t≫
2
5t is much greater than half the period therefore it will be guaranteed that the
capacitor is charged throughout the period.

c) Analyzing the positive semi-cycle

V O −0.7 V +2 V =0

V O =0.7 V −2 V
V O =−1.3 V
10 V −V O −V c =0
V C =10 V −V O
V c =11.3V

Analyzing the negative half-cycle

10 V +V c +V O=0
V O =−V c −10 V
V O =−21.3 V

Resulting wave:

40. Design a fastener to perform the function indicated in Figure 2.179.

Will use aV i=20 V and an ideal diode as seen in the circuit to obtain the
required waveform.
41. Design a fastener to perform the function indicated in Figure 2.180
 C3

3.5uF

D3 R3
3.8k
1N4001

BAT3
2V

47. Determine the voltage available with the voltage doubler of Figure 2.118 if the
secondary voltage of the transformer is 120 vrms

Vm=120 vrms

Vm=❑√ 2*120

vm=169.28 v

Vc−vm−Vm=0

Vc=2 Vm

vc=339.4 v

48. Determine the required PIV ratings of the diodes in Figure 2.118 as a function of
the peak value of the secondary voltage Vm
The PIV for each diode is 2Vm

PIV =2(1.414)(Vrms)

PIV =2.828Vrms