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Introduction

This document provides an introduction to the ULSI元件物理 course. It outlines the instructor, meeting times and location, reference books, and course outline. The course will cover challenges in integrated circuits like device scaling and innovations to address scaling issues. Topics include MOS capacitors, MOSFETs, advanced MOSFETs, reliability, and more than Moore technologies like 3D integration and heterogeneous integration. Students will complete an oral presentation and written report on a related topic to practice problem solving, organization, and presentation skills. Grading will be based 50% on the oral presentation and 50% on the written report.

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沛霖林
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4 views12 pages

Introduction

This document provides an introduction to the ULSI元件物理 course. It outlines the instructor, meeting times and location, reference books, and course outline. The course will cover challenges in integrated circuits like device scaling and innovations to address scaling issues. Topics include MOS capacitors, MOSFETs, advanced MOSFETs, reliability, and more than Moore technologies like 3D integration and heterogeneous integration. Students will complete an oral presentation and written report on a related topic to practice problem solving, organization, and presentation skills. Grading will be based 50% on the oral presentation and 50% on the written report.

Uploaded by

沛霖林
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

ULSI元件物理

Course Introduction

1
• Instructor: 陳志方老師,
Office: 92C93, Tel: 06-2757575-62395
Email: jfchen@[Link]
jfchen@mail ncku edu tw
• Lectures:
Rm: 92371, W 11:10-12:00, Th 10:10-12:00
• Reference
R f b
books:
k
– Modern Semiconductor Devices for Integrated
Circuits, C. C. Hu, Pearson, 2010.
– Fundamentals of Modern VLSI Devices,, 2nd Ed.,,
Y. Taur and T. H. Ning, Cambridge, 2009.
– Physics of Semiconductor Devices,
Devices 3rd Ed.,
Ed S.S M.
M
Sze and K. K. Ng, Wiley, 2007.
2
IC
• Integrated Circuits: composed of many devices on a chip
– SSI: small scale IC
– MSI: medium scale IC
– LSI: large scale IC
– VLSI: very large scale IC
– ULSI: ultra large scale IC

3
Challenges in IC

doubling every 2 years

1971 10 
m 2.3x103
* New technology node every 2 years 2019 ~10 nm ~1010
* ~70% feature size ~2X density
×10-3 ×106 4
Device Scaling
g
• Device dimension  <= physics + material + technology

1970, L = 10 m
L but short channel effect

Tox  but direct tunneling

5
Device Scaling Innovations
• After 90 nm: new engineering, material, structure

* Device dimension  <= physics + material + technology 6


MOSFET to
M 5,
May 5 2011
FinFET
leakage current 

7
More Moore, More than Moore,
Beyond CMOS

[Link]
8
Heterogeneous
g Integration
g

More than Moore: Creating High Value MicroNanoelectronics Systems


9
3D Integration
g

More than Moore Technologies for Next Generation Computer Design


10
• Course outline:
– Introduction
– Semiconductor review
– MOS capacitor
it
– MOSFET
– Advanced MOSFET
– Reliability

* Handout available at:


h
[Link]
// dl k d (數位學習平台)
11
• Grading:
1. Oral
1 O l presentation:
t ti 50% (~
( mid
id Nov.
N to t Jan.)
J )
2. Written report: 50% (due 1/4/2024)
• Purpose:
P tto practice
ti the
th following
f ll i
– Problem solving
– Organization
O i ti
– Presentation (oral & written)
• Choose a topic related to ULSI device physics by yourself
 Oral presentation:
• Each student presents a topic in oral form
• Schedule will be announced by ~10/5/2023
• Collect presentation topic by ~11/9/2023
• Present the topic you choose according to the schedule
 Written report:
• Write the topic you choose like a paper by yourself (Word format)
12

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