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Metal-Oxide-Semiconductor FET
Nuttapol PRAYONGPUN, Ph. D.
MOSFET
MOSFETs have characteristics similar to those of a
JFET between cutoff and saturation at IDSS but have
the added feature of characteristics that extend
into the region of opposite polarity for VGS.
There are 2 types:
1. Depletion type
2. Enhancement type
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MOSFET : Depletion-type MOSFET
Basic construction
n substrate is used to link
the drain and source terminals
The gate is connected to a metal
contact but insulated from SiO2
layer.
SiO2 is a particular type of
insulator referred to as
a dielectric
Many devices provide an add-
itional terminal labeled SS
MOSFET : Depletion-type MOSFET
Basic construction
There is no direct electrical
connection between the gate
terminal and the channel of
a MOSFET
It is the insulating layer of SiO2 in
the MOSFET construction that is
equivalent to the high input im-
pedance of the device
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MOSFET : Depletion-type MOSFET
Graphic symbols :
an n-channel depletion-type
an p-channel depletion-type
MOSFET : Depletion-type MOSFET
Basic operation and characteristics of n-channel
type
The drain current of a depletion-type MOSFET, ID, is
expressed as that of a JFET :
ID=IDSS (1-VGS/VP)2
VP denotes the gate-source cutoff voltage. In some
books, we use “VGS(off)” in abbreviation.
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MOSFET : Depletion-type MOSFET
Basic operation and characteristics
When VGS = 0 V
MOSFET : Depletion-type MOSFET
Basic operation and characteristics
Reduction in free carrier in an n-channel
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MOSFET : Depletion-type MOSFET
Basic operation and characteristics of n-channel
type
MOSFET : Depletion-type MOSFET
Basic operation and characteristics of p-channel
type
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MOSFET : Depletion-type MOSFET
Shorthand Method
VGS ID
0 IDSS
0.3 VP IDSS/2
0.5 VP IDSS/4
VP 0
+1 IDSS (1-1/VP)2
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MOSFET : Depletion-type MOSFET
Data sheet
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MOSFET : Depletion-type MOSFET
Data sheet
Electrical Characteristics
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MOSFET : Depletion-type MOSFET
Exercise
Sketch the transfer characteristics for an n-channel
depletion-type MOSFET with IDSS = 10 mA and VP = -4
V.
Sketch the transfer characteristics for an p-channel
depletion-type MOSFET with IDSS = 6 mA and VP = +6
V.
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MOSFET : Enhancement-type MOSFET
The characteristics of the enhancement-type
MOSFET are quite different from that of the
depletion-type MOSFET.
The transfer function cannot be defined by
Shockley’s equation.
Current control in an n-channel device is now
effected by a positive gate-to-source voltage rather
than the range of negative voltages encountered for
n-channel JFETs.
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MOSFET : Enhancement-type MOSFET
Basic contruction
The construction of an enhancement-
type MOSFET is similar to that
of the depletion-type MOSFET.
The main difference is the
absence of a channel between
the two n-doped regions.
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MOSFET : Enhancement-type MOSFET
Basic operation and characteristics for n-channel
enchancement-type MOSFET
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MOSFET : Enhancement-type MOSFET
Basic operation and characteristics for an n-channel
enchancement-type MOSFET
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MOSFET : Enhancement-type MOSFET
Basic operation and characteristics for n-channel
enchancement-type MOSFET
For levels of VGS > VT, the drain current is
ID=k(VGS-VT)2
k is a constant factor that is a function
of the construction of the device.
k=ID(on)/(VGS(on)-VT)2
For example:
if ID(on)=10 mA when VGS(on)=8 V and VT=2 V, the value of k is
k=10mA/(8V-2V)2 = 0.278 x 10^(-3) A/V2
and ID= 0.278 x 10^(-3) (VGS-2)2
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MOSFET : Enhancement-type MOSFET
Basic operation and characteristics for p-channel
enchancement-type MOSFET
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MOSFET : Enhancement-type MOSFET
Basic operation and characteristics for p-channel
enchancement-type MOSFET
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MOSFET : Enhancement-type MOSFET
Graphic symbols
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MOSFET : Enhancement-type MOSFET
How to read data sheet?
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MOSFET : Enhancement-type MOSFET
How to read data sheet?
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MOSFET : Enhancement-type MOSFET
Exercise
1. Using the data provided on the data sheet and an
average threshold of VGS(Th) = 3 V, determine :
(a) The resulting value of k for the MOSFET
(b) The transfer characteristics
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MOSFET : Enhancement-type MOSFET
Exercise
1. Using the data provided on the data sheet and an
average threshold of VGS(Th) = 3 V, determine :
(a) The resulting value of k for the MOSFET
(b) The transfer characteristics
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MOSFET : Enhancement-type MOSFET
Exercise
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CMOS
CMOS (complementary
MOSFET) uses a p-channel
and n-channel MOSFET;
often on the same substrate as
shown here.
Advantages
• Useful in logic circuit designs
• Higher input impedance
• Faster switching speeds
• Lower operating power levels
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CMOS
Summary
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Homework
D-MOSFET
E-MOSFET
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