SFD2006T
60A, 20V N-CHANNEL MOSFET
GENERAL DESCRIPTION
The SFD2006T uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
FEATURES
◆ 60A,20V,RDS(on)(typ.)=5.6m@VGS=4.5V
◆ Excellent package for good heat dissipation D
◆Fully characterized avalanche voltage and current
◆ Good stability and uniformity with high EAS S
◆ High density cell design for ultra low Rdson
G
◆ Special process technology for high ESD capability
TO-252-2L
ORDERING INFORMATION
Part No. Package Marking Material Packing
SFD2006T TO-252-2L SFD2006T Pb free Reel
ABSOLUTE MAXIMUM RATINGS TC = 25℃ unless otherwise noted
Characteristics Symbol Ratings Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12 V
TC = 25°C 60
Drain Current ID A
TC = 100°C 42
Drain Current Pulsed (Note 1) IDM 220 A
Maximum Power Dissipation PD 65 W
Operation Junction Temperature Range TJ -55～+150 C
Storage Temperature Range Tstg -55～+150 C
Thermal Characteristics
Symbol Parameter Value Unit
RθJC Thermal Resistance, Junction-to-Case 1.82 ℃/W
RθJA Thermal Resistance, Junction-to-Ambient 0.48 ℃/W
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SFD2006T
Electrical Characteristics TC = 25℃ unless otherwise noted
Symbol Parameter Conditions Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, 20 - - V
IDSS Zero Gate Voltage Drain Current VDS =16V, VGS = 0V - - 10 µA
IGSS Gate-Body Leakage Current, Forward VGS = ±12V, VDS = 0V - - ±100 nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1mA 0.5 0.7 1.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 4.5V, ID = 20A - 5.6 8.0 mΩ
Dynamic Characteristics
Ciss Input Capacitance VDS =10V, VGS = 0V, - 1850 - pF
Coss Output Capacitance f =1.0MHz - 473 - pF
Crss Reverse Transfer Capacitance - 200 - pF
Switching Characteristics
td(on) Turn-On Delay Time - 9.8 - ns
tr Turn-On Rise Time VDD = 10V, ID=1A,VGS= - 20 - ns
5V RGEN =3.3Ω
td(off) Turn-Off Delay Time - 35 - ns
tf Turn-Off Fall Time - 17.5 - ns
Qg Total Gate Charge - 29.3 - nC
VDS = 10V, ID =20.0A,
Qgs Gate-Source Charge VGS =4.5V - 5.8 - nC
Qgd Gate-Drain Charge - 6.3 - nC
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
IS - - 60 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 2.5A - - 1.2 V
VGS = 0V, Is = 20A,
trr Reverse Recovery Time dIF/dt=100A/µs - 35 - ns
Qrr Reverse Recovery Charge - 29 - µC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃,VDD=10V,VG=10V,L=0.5mH,Rg=25Ω，
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SFD2006T
Typical Electrical and Thermal Characteristics (Curves)
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SFD2006T
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SFD2006T
ＴＹＰＩＣＡＬ ＴＥＳＴ ＣＩＲＣＵＲＴ
1) EAS Test Circuits
2) Gate Charge Test Circuit:
3) Switch Time Test Circuit：
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SFD2006T
TO-252-2L UNIT: mm
6.60±0.3 2.30±0.20
5.10～5.46
0.45～0.65
Eject pin（note1）
10.10±0.50
6.1±0.3
0.0～0.127
2.90REF
1.4～1.7
0.80±0.20
2.30 TYP
0.45～0.65
0.76±0.10
NOTE1： There are two conditions for this position:has
an eject pin or has no eject pin.
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