0% found this document useful (0 votes)
40 views39 pages

CMOS Inverter Operation and Analysis

The document describes the design and operation of a CMOS inverter. It consists of an nMOS and pMOS transistor connected between the power supply (VDD) and ground. When the input is low, the pMOS is off and nMOS is on, pulling the output high to VDD. When the input is high, the nMOS is off and pMOS is on, pulling the output low to ground. The document discusses how the transistors operate in different regions and how this determines the voltage transfer characteristics of the inverter.
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
40 views39 pages

CMOS Inverter Operation and Analysis

The document describes the design and operation of a CMOS inverter. It consists of an nMOS and pMOS transistor connected between the power supply (VDD) and ground. When the input is low, the pMOS is off and nMOS is on, pulling the output high to VDD. When the input is high, the nMOS is off and pMOS is on, pulling the output low to ground. The document discusses how the transistors operate in different regions and how this determines the voltage transfer characteristics of the inverter.
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

9/6,6<67(0'(6,*1

CMOS Inverter
Summary of transistor operation
NMOS transistor PMOS transistor
nMOS transistor

pMOS transistor
The CMOS Inverter
CMOS Inverter
N Well VDD

VDD PMOS

Contacts
PMOS
In Out
In Out
Metal 1
Polysilicon
NMOS

NMOS
GND

4: DC and Transient Response CMOS VLSI Design Slide 


Two Inverters
Share power and ground

Abut cells

VDD
Connect in Metal

4: DC and Transient Response CMOS VLSI Design Slide


CMOS Inverter as Switch
V DD V DD

tpHL = f([Link])
Rp
= 0.69 RonCL

V out
V out
CL
CL
Rn

V in 5 0 V in 5 V DD
(a) Low-to-high (b) High-to-low
4: DC and Transient Response CMOS VLSI Design Slide
DC Response
‰ DC Response: Vout vs. Vin for a gate
‰ Ex: Inverter
– When Vin = 0 -> Vout = VDD
– When Vin = VDD -> Vout = 0
VDD
– In between, Vout depends on
transistor size and current Idsp
Vin Vout
– By KCL, must settle such that Idsn
Idsn = |Idsp|
– We could solve equations
– But graphical solution gives more insight

4: DC and Transient Response CMOS VLSI Design Slide


Transistor Operation
‰ Current depends on region of transistor behavior
‰ For what Vin and Vout are nMOS and pMOS in
– Cutoff?
– Linear?
– Saturation?

4: DC and Transient Response CMOS VLSI Design Slide


nMOS Operation
Cutoff Linear Saturated
Vgsn < Vgsn > Vgsn >

Vdsn < Vdsn >

VDD

Idsp
Vin Vout
Idsn

4: DC and Transient Response CMOS VLSI Design Slide 


nMOS Operation
Cutoff Linear Saturated
Vgsn < Vtn Vgsn > Vtn Vgsn > Vtn

Vdsn < Vgsn – Vtn Vdsn > Vgsn – Vtn

VDD

Idsp
Vin Vout
Idsn

4: DC and Transient Response CMOS VLSI Design Slide


nMOS Operation
Cutoff Linear Saturated
Vgsn < Vtn Vgsn > Vtn Vgsn > Vtn

Vdsn < Vgsn – Vtn Vdsn > Vgsn – Vtn

VDD
Vgsn = Vin Idsp
Vin Vout
Vdsn = Vout Idsn

4: DC and Transient Response CMOS VLSI Design Slide


nMOS Operation
Cutoff Linear Saturated
Vgsn < Vtn Vgsn > Vtn Vgsn > Vtn
Vin < Vtn Vin > Vtn Vin > Vtn
Vdsn < Vgsn – Vtn Vdsn > Vgsn – Vtn
Vout < Vin - Vtn Vout > Vin - Vtn

VDD
Vgsn = Vin Idsp
Vin Vout
Vdsn = Vout Idsn

4: DC and Transient Response CMOS VLSI Design Slide


pMOS Operation
Cutoff Linear Saturated
Vgsp > Vgsp < Vgsp <

Vdsp > Vdsp <

VDD

Idsp
Vin Vout
Idsn

4: DC and Transient Response CMOS VLSI Design Slide 


pMOS Operation
Cutoff Linear Saturated
Vgsp > Vtp Vgsp < Vtp Vgsp < Vtp

Vdsp > Vgsp – Vtp Vdsp < Vgsp – Vtp

VDD

Idsp
Vin Vout
Idsn

4: DC and Transient Response CMOS VLSI Design Slide 


pMOS Operation
Cutoff Linear Saturated
Vgsp > Vtp Vgsp < Vtp Vgsp < Vtp

Vdsp > Vgsp – Vtp Vdsp < Vgsp – Vtp

VDD
Vgsp = Vin - VDD Vtp < 0 Idsp
Vin Vout
Vdsp = Vout - VDD Idsn

4: DC and Transient Response CMOS VLSI Design Slide 


pMOS Operation
Cutoff Linear Saturated
Vgsp > Vtp Vgsp < Vtp Vgsp < Vtp
Vin > VDD + Vtp Vin < VDD + Vtp Vin < VDD + Vtp
Vdsp > Vgsp – Vtp Vdsp < Vgsp – Vtp
Vout > Vin - Vtp Vout < Vin - Vtp

VDD
Vgsp = Vin - VDD Vtp < 0 Idsp
Vin Vout
Vdsp = Vout - VDD Idsn

4: DC and Transient Response CMOS VLSI Design Slide 


Voltage Input/Output
I-V Characteristics
‰ Make pMOS wider than nMOS such that βn = βp
Vgsn5

Vgsn4
Idsn

Vgsn3
-Vdsp
-VDD Vgsn2
Vgsp1 Vgsn1
Vgsp2 0 VDD
Vgsp3 Vdsn

Vgsp4 -Idsp

Vgsp5

4: DC and Transient Response CMOS VLSI Design Slide 


Load Line Analysis
‰ Vin = 0

Vin0

Idsn, |Idsp|

Vin0
VDD
Vout

4: DC and Transient Response CMOS VLSI Design Slide 


Load Line Analysis
‰ Vin = 0.2VDD

Vin1
Idsn, |Idsp|

Vin1
VDD
Vout

4: DC and Transient Response CMOS VLSI Design Slide 


Load Line Analysis
‰ Vin = 0.4VDD

Idsn, |Idsp|

Vin2
Vin2

VDD
Vout

4: DC and Transient Response CMOS VLSI Design Slide 


Load Line Analysis
‰ Vin = 0.6VDD

Idsn, |Idsp|

Vin3
Vin3

VDD
Vout

4: DC and Transient Response CMOS VLSI Design Slide 


Load Line Analysis
‰ Vin = 0.8VDD

Vin4
Idsn, |Idsp|

Vin4
VDD
Vout

4: DC and Transient Response CMOS VLSI Design Slide 


Load Line Analysis
‰ Vin = VDD

Vin0 Vin5

Vin1
Idsn, |Idsp|

Vin2
Vin3
Vin4
VDD
Vout

4: DC and Transient Response CMOS VLSI Design Slide 


Load Line Summary

Vin0 Vin5

Vin1 Vin4
Idsn, |Idsp|

Vin2 Vin3
Vin3 Vin2
Vin4 Vin1
VDD
Vout

4: DC and Transient Response CMOS VLSI Design Slide 


DC Transfer Curve
‰ Transcribe points onto Vin vs. Vout plot

VDD
Vin0 Vin5
A B

Vout
Vin1 Vin4
C

Vin2 Vin3
Vin3 Vin2 D
Vin4 Vin1 E
0 Vtn VDD/2 VDD+Vtp
VDD VDD
Vout Vin

4: DC and Transient Response CMOS VLSI Design Slide 


Load curves for Vdd=2.5V
DC Transfer curve for Vdd=2.5V
Operating Regions
‰ Revisit transistor operating regions

Region nMOS pMOS VDD


A B
A
Vout
B C
C
D D
E
0
E Vtn VDD/2 VDD+Vtp
VDD
Vin

4: DC and Transient Response CMOS VLSI Design Slide 


Operating Regions
‰ Revisit transistor operating regions

Region nMOS pMOS VDD


A B
A Cutoff Linear
Vout
B Saturation Linear C
C Saturation Saturation
D Linear Saturation D
E
0
E Linear Cutoff Vtn VDD/2 VDD+Vtp
VDD
Vin

4: DC and Transient Response CMOS VLSI Design Slide


Region Operation

4: DC and Transient Response CMOS VLSI Design Slide 


Beta Ratio
‰ If βp / βn ≠ 1, switching point will move from VDD/2
‰ Called skewed gate
‰ Other gates: collapse into equivalent inverter
VDD
βp
= 10
βn
Vout 2
1
0.5
βp
= 0.1
βn

0
VDD
Vin

4: DC and Transient Response CMOS VLSI Design Slide 


Variation of Switching threshold with
beta ratio
Noise Margins
‰ How much noise can a gate input see before it does
not recognize the input?

Output Characteristics Input Characteristics


VDD
Logical High
Output Range VOH Logical High
Input Range
NMH
VIH
Indeterminate
VIL Region
NML
Logical Low
Logical Low VOL Input Range
Output Range
GND

4: DC and Transient Response CMOS VLSI Design Slide 


Logic Levels
‰ To maximize noise margins, select logic levels at

Vout

VDD

β p/β n > 1

Vin Vout

Vin
0
VDD

4: DC and Transient Response CMOS VLSI Design Slide


Logic Levels
‰ To maximize noise margins, select logic levels at
– unity gain point of DC transfer characteristic
Vout

Unity Gain Points


VDD
Slope = -1
VOH

β p/β n > 1

Vin Vout

VOL
Vin
0
Vtn VIL VIH VDD- VDD
|Vtp|

4: DC and Transient Response CMOS VLSI Design Slide


MOSFET Circuit at DC – Problem 1
The MOSFET in the circuit shown has Vt = 1V,
kn’= 100μA/V2 and λ = 0. Find the required
values of W/L and of R so that when
vI=VDD=+5 V, rDS=50 Ω and vo= 50 mV.

vI = VGS = 5 V , vo = VDS = 0.05 V

VDS 0.05
rDS = 50 Ω = ⇒ ID = = 0.001 A = 1 mA
ID 50

VDD − vo 5 − 0.05
R= = = 4.95 k Ω
ID 1

31
MOSFET Circuit at DC – Problem 1 (cont’)

VDS < VGS − Vt ⇒ triode region

W ⎡ V 2

I D = kn ⎢(VGS − Vt )VDS −
' DS
L⎣ 2 ⎥⎦

W ⎡ 0.05 2

1 = 100 × 10 −3
⎢ ( 5 − 1) × 0.05 −
L⎣ 2 ⎥⎦

W
= 50
L

Common questions

Powered by AI

For the nMOS transistor, it is in cutoff when Vgsn < Vtn. It operates in linear when Vgsn > Vtn and Vdsn < Vgsn - Vtn, and in saturation when Vgsn > Vtn and Vdsn > Vgsn - Vtn. For the pMOS transistor, it is in cutoff when Vgsp > Vtp, in linear when Vgsp < Vtp and Vdsp < Vgsp - Vtp, and in saturation when Vgsp < Vtp and Vdsp > Vgsp - Vtp .

The DC transfer curve plots Vout against Vin for the CMOS inverter, showing how output voltage changes with varying input levels. Points along this curve indicate which combinations of Vin and Vout place the nMOS and pMOS transistors in cutoff, linear, or saturation regions. For example, at low Vin, the nMOS is off, and the pMOS is in saturation, while in the midpoint region, the nMOS is in saturation, and the pMOS is in linear .

The pMOS transistor enters the linear region when Vgsp < Vtp and Vdsp < Vgsp - Vtp. This condition implies that both the source-to-gate voltage is below the threshold, allowing the transistor to conduct in a manner dependent on both the gate-source and the source-drain voltages .

Sizing the pMOS wider than the nMOS ensures that the βn (mobility of nMOS carriers) is matched to βp (mobility of pMOS carriers), allowing for balanced current driving capabilities. This configuration equalizes the rise and fall times, optimizing the inverter's performance and maintaining the symmetry of the DC transfer curve .

Ensuring Idsn = |Idsp| across the operation of a CMOS inverter is necessary to balance the drive strengths of the nMOS and pMOS transistors. This balance prevents static power consumption and ensures that output voltage levels switch cleanly and predictably, which is critical for the inverter's efficiency and reliability .

Noise margins are critical in determining how much external noise a CMOS inverter's input can tolerate before misinterpreting the signal. The noise margins are defined as NML and NMH, which represent the input voltage variations tolerated while still producing valid logical levels. The extent of these margins is influenced by the input and output characteristics of the inverter, particularly at the unity gain point of the DC transfer characteristic .

The transient response for a transition from low-to-high is analyzed using the propagation delay tpHL, calculated by the formula tpHL = 0.69 RonCL, where Ron is the on-resistance of the transistor and CL is the load capacitance. This determines how quickly the output voltage rises in response to a change in input from low to high .

As Vin increases from 0 to VDD, the operating regions of the transistors shift: initially, the pMOS is in saturation (nMOS cutoff). Around the midpoint, both transistors are in saturation. As Vin approaches VDD, the nMOS moves into saturation while the pMOS goes into cutoff. This sequence reflects the complementary switching behavior of CMOS inverters .

The beta ratio (βp/βn) influences the switching threshold of a CMOS inverter. When βp/βn ≠ 1, the switching point will move away from VDD/2. This results in what is called a skewed gate, which may cause the inverter to switch at different input voltage levels than intended, thereby affecting its noise margins and signal integrity .

The unity gain point, where the slope of the DC transfer characteristic is -1, is crucial for defining logic levels as it delineates the points where input and output voltages are equal, thus affecting noise margins. At this point, even minor variations can result in significant changes in the output, emphasizing the importance of selecting logic levels that maximize noise margins .

You might also like